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1. 发明授权

US08355224B2 Sensor shape of a CPP magnetic head for improving the MR ratio 有权
标题翻译：用于改善MR比的CPP磁头的传感器形状
公开(公告)号：US08355224B2
公开(公告)日：2013-01-15
申请号：US12011904
申请日：2008-01-29
申请人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
发明人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/08
摘要： Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦X≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.
摘要翻译：本发明的实施例有助于通过在传感器膜被蚀刻，轨道宽度变窄并且头部特性稳定时发生的再沉积或损伤来防止头部特性劣化。根据一个实施例，当假设空气轴承表面上的传感器膜的厚度为T时，介于介于包含传感器膜的自由层和被钉扎层之间的介质层的端部之间的距离和传感器膜最低部分的一端，满足1.2×T＆nlE; X＆nlE; 2.5×T的关系，并且通过绝缘体在轨道宽度方向上与两侧接触的一对磁性膜的端部不存在于自由层末端的轨道中心部分。在蚀刻光束的入射角变化的同时蚀刻传感器膜，并且当假定与传感器膜表面垂直的方向为入射角为0时，在其入射角刻蚀光束随时间变小。

2. 发明申请

US20090046394A1 Sensor shape and etching process of CPP magnetic head for reduce property degradation 有权
标题翻译： CPP磁头的传感器形状和蚀刻工艺，用于降低性能下降
公开(公告)号：US20090046394A1
公开(公告)日：2009-02-19
申请号：US12011904
申请日：2008-01-29
申请人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
发明人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
IPC分类号： G11B5/33 , B44C1/22
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/08
摘要： Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦x≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.
摘要翻译：本发明的实施例有助于通过在传感器膜被蚀刻，轨道宽度变窄并且头部特性稳定时发生的再沉积或损伤来防止头部特性劣化。根据一个实施例，当假设空气轴承表面上的传感器膜的厚度为T时，介于介于包含传感器膜的自由层和被钉扎层之间的介质层的端部之间的距离和传感器膜最低部分的端部，满足1.2×T <= x <= 2.5×T的关系，并且通过绝缘体在轨道宽度方向上与两侧接触的一对磁性膜的端部不存在于自由层末端的轨道中心部分。在蚀刻光束的入射角变化的同时蚀刻传感器膜，并且当假定与传感器膜表面垂直的方向为入射角为0时，在其入射角刻蚀光束随时间变小。

3. 发明授权

US08432646B2 Magnetic detection element 有权
标题翻译：磁性检测元件
公开(公告)号：US08432646B2
公开(公告)日：2013-04-30
申请号：US12012635
申请日：2008-02-04
申请人： Shuuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
发明人： Shuuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/398 , H01L43/12
摘要： Embodiments of the present invention help to reduce etching damage at end parts of a magnetoresistive sensor in ion beam etching. According to one embodiment, ion beam etching (IBE) is used in a magnetoresistive sensor track width forming step. This IBE irradiates Ar ion beam to a substrate in a state that the substrate is inclined and further rotates the substrate about its normal as a rotational axis. In a conventional track width forming step, the IBE irradiates the Ar ion beam to the substrate all the time while the IBE is rotating the substrate. By contrast, the IBE according to embodiments of the present invention irradiates the Ar ion beam to the substrate only in a predetermined specific angular range.
摘要翻译：本发明的实施例有助于减少离子束蚀刻中的磁阻传感器端部处的蚀刻损伤。根据一个实施例，在磁阻传感器轨道宽度形成步骤中使用离子束蚀刻（IBE）。该IBE在基板倾斜的状态下将Ar离子束照射到基板，并且进一步使基板围绕其正常旋转轴线旋转。在传统的轨道宽度形成步骤中，IBE在基板旋转的同时始终将Ar离子束照射到衬底上。相比之下，根据本发明的实施例的IBE仅在预定的特定角度范围内将Ar离子束照射到衬底。

4. 发明申请

US20080218910A1 Magnetic detection element and manufacturing method thereof 有权
标题翻译：磁性检测元件及其制造方法
公开(公告)号：US20080218910A1
公开(公告)日：2008-09-11
申请号：US12012635
申请日：2008-02-04
申请人： Shuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
发明人： Shuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/398 , H01L43/12
摘要： Embodiments of the present invention help to reduce etching damage at end parts of a magnetoresistive sensor in ion beam etching. According to one embodiment, ion beam etching (IBE) is used in a magnetoresistive sensor track width forming step. This IBE irradiates Ar ion beam to a substrate in a state that the substrate is inclined and further rotates the substrate about its normal as a rotational axis. In a conventional track width forming step, the IBE irradiates the Ar ion beam to the substrate all the time while the IBE is rotating the substrate. By contrast, the IBE according to embodiments of the present invention irradiates the Ar ion beam to the substrate only in a predetermined specific angular range.
摘要翻译：本发明的实施例有助于减少离子束蚀刻中的磁阻传感器端部处的蚀刻损伤。根据一个实施例，在磁阻传感器轨道宽度形成步骤中使用离子束蚀刻（IBE）。该IBE在基板倾斜的状态下将Ar离子束照射到基板，并且进一步使基板围绕其正常旋转轴线旋转。在传统的轨道宽度形成步骤中，IBE在基板旋转的同时始终将Ar离子束照射到衬底上。相比之下，根据本发明的实施例的IBE仅在预定的特定角度范围内将Ar离子束照射到衬底。

5. 发明申请

US20080212238A1 Magnetoresistive head with larger longitudinal biasing 审中-公开
标题翻译：磁阻头具有较大的纵向偏置
公开(公告)号：US20080212238A1
公开(公告)日：2008-09-04
申请号：US12012341
申请日：2008-01-31
申请人： Katsuro Watanabe , Satoru Okamoto , Masahiro Osugi , Koji Okazaki
发明人： Katsuro Watanabe , Satoru Okamoto , Masahiro Osugi , Koji Okazaki
IPC分类号： G11B5/33
CPC分类号： G11B5/59633 , G11B5/59666
摘要： Embodiments of the present invention help to efficiently apply a longitudinal biasing with appropriate strength from a longitudinal biasing layer to a free layer even in a small read gap length. According to one embodiment, in the track width direction of the magnetoresistive film, the longitudinal biasing layer excluding its portion close to the magnetoresistive film is made approximately uniform in thickness. An edge toward the magnetoresistive film of the longitudinal biasing layer is positioned more outwardly in the track width direction than an edge in the track width direction of the free layer. A portion closest to the substrate of the interface between the longitudinal biasing layer and the insulator on the track-width sides is positioned lower than the interface between the magnetoresistive film and the lower magnetic shield layer.
摘要翻译：本发明的实施例有助于即使在小的读取间隙长度中也可以将具有适当强度的纵向偏置从纵向偏置层施加到自由层。根据一个实施例，在磁阻膜的磁道宽度方向上，除了靠近磁阻膜的部分之外的纵向偏置层的厚度大致均匀。朝向纵向偏置层的磁阻膜的边缘比沿自由层的轨道宽度方向的边缘更靠外侧位于轨道宽度方向上。在纵向偏置层和轨道宽度侧的绝缘体之间的界面最靠近的部分位于低于磁阻膜和下部磁屏蔽层之间的界面的位置。

6. 发明授权

US07944651B2 CPP-type magnetoresistive effect head and method of manufacturing the same 有权
标题翻译： CPP型磁阻效应头及其制造方法
公开(公告)号：US07944651B2
公开(公告)日：2011-05-17
申请号：US12006723
申请日：2008-01-04
申请人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watanabe
发明人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watanabe
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , H01L43/08 , H01L43/10
摘要： Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer. A magnetic shield underlayer film is formed on the top surfaces of the free layer, the magnetic domain control layer and the refill insulation film and an upper magnetic shield layer is formed on the magnetic shield underlayer film.
摘要翻译：本发明的实施例有助于防止垂直于平面型（CPP型）磁阻效应头的电流的偏置磁场的减小，从而抑制读取输出的减小。根据一个实施例，在下磁屏蔽的顶部上形成CPP型磁阻效应膜。在中间层的两侧和CPP型磁阻效应膜的自由层上形成补充绝缘膜和磁畴控制层。侧壁保护膜形成在补充绝缘膜的侧壁上并且在自由层的顶部上，以便限定磁畴控制层的高度。为了增加磁畴控制层的膜厚度，磁畴控制层和再填充绝缘膜高于自由层的顶表面。在自由层，磁畴控制层和再填充绝缘膜的上表面上形成有磁屏蔽下层膜，在磁屏蔽下层膜上形成上磁屏蔽层。

7. 发明授权

US09093388B2 Dry etching agent and dry etching method using the same 有权
标题翻译：干蚀刻剂和干蚀刻法使用该方法
公开(公告)号：US09093388B2
公开(公告)日：2015-07-28
申请号：US13576093
申请日：2011-01-25
申请人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
发明人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
IPC分类号： C09K13/00 , C09K13/04 , C09K13/08 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , H01L21/311
CPC分类号： H01L21/31055 , C09K13/00 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.
摘要翻译：根据本发明的干蚀刻剂包含（A）由化学式CF 3C≡CX表示的氟化丙炔，其中X为H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

8. 发明授权

US08553167B2 Portable electronic device 有权
公开(公告)号：US08553167B2
公开(公告)日：2013-10-08
申请号：US13309797
申请日：2011-12-02
申请人： Satoru Okamoto , Shunpei Yamazaki
发明人： Satoru Okamoto , Shunpei Yamazaki
IPC分类号： G02F1/136 , G02F1/1335
CPC分类号： G06F1/1616 , G02F1/13338 , G02F2203/02 , G06F1/1626 , G06F1/1637 , G06F1/1643 , G06F1/1647 , G06F1/1684 , G06F1/1686 , G06F3/0412 , G06F3/14 , G09G3/20 , G09G5/22 , G09G2300/0842 , G09G2340/0407 , H01L27/323 , H01L27/3234 , H01L27/3244 , H04M1/0214 , H04M1/0247 , H04M1/72519 , H04M2250/16 , H04M2250/22
摘要： When image data is displayed on the display portion of a conventional mobile telephone, characters cannot be displayed thereon, and thus the image data and the characters cannot be simultaneously displayed. In a portable electronic device according to the present invention, a cover member having a first display device (101) for displaying an image (digital still image or the like) and a second display device (102) having a touch input operational portion (for displaying characters, symbols, or the like) are attached to each other so as to allow opening and closing.

9. 发明申请

US20120075785A1 PORTABLE ELECTRONIC DEVICE 有权
公开(公告)号：US20120075785A1
公开(公告)日：2012-03-29
申请号：US13309758
申请日：2011-12-02
申请人： Satoru Okamoto , Shunpei Yamazaki
发明人： Satoru Okamoto , Shunpei Yamazaki
IPC分类号： H05K7/00
CPC分类号： G06F1/1616 , G02F1/13338 , G02F2203/02 , G06F1/1626 , G06F1/1637 , G06F1/1643 , G06F1/1647 , G06F1/1684 , G06F1/1686 , G06F3/0412 , G06F3/14 , G09G3/20 , G09G5/22 , G09G2300/0842 , G09G2340/0407 , H01L27/323 , H01L27/3234 , H01L27/3244 , H04M1/0214 , H04M1/0247 , H04M1/72519 , H04M2250/16 , H04M2250/22
摘要： When image data is displayed on the display portion of a conventional mobile telephone, characters cannot be displayed thereon, and thus the image data and the characters cannot be simultaneously displayed. In a portable electronic device according to the present invention, a cover member having a first display device (101) for displaying an image (digital still image or the like) and a second display device (102) having a touch input operational portion (for displaying characters, symbols, or the like) are attached to each other so as to allow opening and closing.

10. 发明授权

US08124544B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08124544B2
公开(公告)日：2012-02-28
申请号：US12477303
申请日：2009-06-03
申请人： Satoru Okamoto , Teruyuki Fujii , Hideto Ohnuma , Akihiro Ishizuka
发明人： Satoru Okamoto , Teruyuki Fujii , Hideto Ohnuma , Akihiro Ishizuka
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/124 , C23F1/20 , C23F1/26 , G02F1/136227 , G02F2001/13629 , H01L21/32134 , H01L21/32136 , H01L21/76838 , H01L21/76885
摘要： It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; forming a resist mask over the second conductive layer; processing the second conductive layer by dry etching with the use of the mask; and processing the first conductive layer by wet etching with the mask left, wherein the etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching, and wherein the etching rate of the second conductive layer is the same as or more than that of the first conductive layer in the wet etching.
摘要翻译：本发明的目的是提供一种包括具有优选形状的布线的半导体器件。一种制造方法包括以下步骤：形成连接到元件的第一导电层和其上的第二导电层; 在所述第二导电层上形成抗蚀剂掩模; 通过使用掩模的干法蚀刻处理第二导电层; 以及通过左蚀刻法进行湿式蚀刻来处理第一导电层，其中在干蚀刻中第二导电层的蚀刻速率高于第一导电层的蚀刻速率，并且其中第二导电层的蚀刻速率相同与湿蚀刻中的第一导电层的相同或更多。

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