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    • 2. 发明申请
    • Apparatus and method for processing wafer
    • 晶圆处理装置及方法
    • US20060191482A1
    • 2006-08-31
    • US11074717
    • 2005-03-09
    • Seiichiro KannoJunichi TanakaGo MiyaTsunehiko TsuboneAkitaka MakinoToshio Masuda
    • Seiichiro KannoJunichi TanakaGo MiyaTsunehiko TsuboneAkitaka MakinoToshio Masuda
    • C23C16/00
    • H01L21/32137H01J37/32935H01J37/3299H01J2237/2001H01L21/67069H01L21/67109
    • A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
    • 提供能够在晶片内获得均匀的CD分布的晶片处理装置。 晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路,用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置,用于调节加热器输入功率的装置和 控制电脑。 控制计算机接收由通过改变温度调节剂的温度,冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。 线宽尺寸用于计算和控制温度调节剂的温度,冷却气体压力和加热器的输入功率中的至少一个,以获得任意的蚀刻线宽度尺寸。
    • 3. 发明授权
    • Plasma processing apparatus and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • US07147747B2
    • 2006-12-12
    • US10377826
    • 2003-03-04
    • Go MiyaHiroyuki KitsunaiJunichi TanakaToshio MasudaHideyuki Yamamoto
    • Go MiyaHiroyuki KitsunaiJunichi TanakaToshio MasudaHideyuki Yamamoto
    • H01L21/00C23C16/00
    • G01N21/73H01J37/32935H01J37/32963H01L21/67253H05H1/0037
    • A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.
    • 一种具有处理室的等离子体处理装置,其中待处理物体经受等离子体处理,其包括用于分光计单元的光接收部分,运算单元,数据库,确定单元和装置控制器。 确定单元确定处理室中达到调味品终点的状态。 执行条件的确定,使得发现通过多变量分析从一批等离子体发射数据得到的一个或多个输出信号与从前一批等离子体发射数据得到的一个或多个输出信号之间的一个或多个差异,平均值 确定一批中的差异值,确定一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差,并将该值与预设阈值进行比较。
    • 4. 发明授权
    • Plasma processing method
    • 等离子体处理方法
    • US07147748B2
    • 2006-12-12
    • US10779742
    • 2004-02-18
    • Go MiyaHiroyuki KitsunaiJunichi TanakaToshio MasudaHideyuki Yamamoto
    • Go MiyaHiroyuki KitsunaiJunichi TanakaToshio MasudaHideyuki Yamamoto
    • H01L21/00C23C16/00
    • G01N21/73H01J37/32935H01J37/32963H01L21/67253H05H1/0037
    • A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.
    • 一种使用等离子体处理装置的等离子体处理方法,该等离子体处理装置具有其中对基板进行等离子体处理的处理室,受光部,光谱仪单元,运算单元,数据库,确定单元,用于确定终点 调味料作为处理室的条件,以及设备控制器。 该方法包括以下步骤:将从光谱仪单元输出的多通道信号转换为一批输出信号,发现前一批次的输出信号和输出信号之间的差异,确定一批中的差异的平均值, 一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差,并将确定的值与预设阈值进行比较。