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1. 发明申请

US20060291132A1 Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
标题翻译：静电卡盘，晶片加工装置和等离子体处理方法
公开(公告)号：US20060291132A1
公开(公告)日：2006-12-28
申请号：US11370102
申请日：2006-03-08
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
摘要翻译：以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

2. 发明申请

US20090178764A1 Plasma processing apparatus including electrostatic chuck with built-in heater 审中-公开
标题翻译：等离子体处理装置，包括带有内置加热器的静电卡盘
公开(公告)号：US20090178764A1
公开(公告)日：2009-07-16
申请号：US12073082
申请日：2008-02-29
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Hiroho Kitada
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Hiroho Kitada
IPC分类号： H01L21/3065
CPC分类号： H01L21/67103 , H01L21/6831
摘要： A plasma processing apparatus is provided that includes a heater-built-in electrostatic chuck, prevents a direct-current potential difference from being made in the plane of a wafer during plasma processing, and performs plasma processing while controlling the temperature of the wafer with good responsiveness without damaging a semiconductor device. The heater-built-in electrostatic chuck of the plasma processing apparatus has a structure in which an insulator, two heaters, an insulator, two electrostatic chuck electrodes having approximately identical areas, and a dielectric film are laminated in ascending order on a conductive base material to which a bias voltage is to be applied. The heaters have approximately identical areas, and are disposed below the two electrostatic chuck electrodes, respectively. Power is provided to the heaters via a low-path filter and a coaxial cable.
摘要翻译：提供一种等离子体处理装置，其包括加热器内置的静电卡盘，防止在等离子体处理期间在晶片的平面中产生直流电位差，并且在良好地控制晶片的温度的同时进行等离子体处理响应性而不损坏半导体器件。等离子体处理装置的加热器内置的静电卡盘具有这样的结构，其中绝缘体，两个加热器，绝缘体，具有近似相同面积的两个静电卡盘电极和电介质膜以升序层叠在导电基材上施加偏置电压。加热器具有大致相同的面积，分别设置在两个静电吸盘电极的下方。通过低通滤波器和同轴电缆将功率提供给加热器。

3. 发明申请

US20070044916A1 Vacuum processing system 审中-公开
标题翻译：真空加工系统
公开(公告)号：US20070044916A1
公开(公告)日：2007-03-01
申请号：US11214951
申请日：2005-08-31
申请人： Masakazu Isozaki , Seiichiro Kanno , Hideki Kihara , Hiroho Kitada
发明人： Masakazu Isozaki , Seiichiro Kanno , Hideki Kihara , Hiroho Kitada
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/6831 , C23C4/02 , C23C28/00 , C23C28/04 , H01J37/32431 , H01J2237/2001
摘要： A ceramic film is formed by a spray method on a base material of an electrostatic attraction device. Electrode films for electrostatic attraction are formed by a spray method on a surface of the ceramic film. A ringular heater film is formed in a spray method between the electrode films in a radial direction of the electrode films. In addition, a ceramic film is formed by a spray method on upper surfaces of the electrode films and the heater film.
摘要翻译：通过喷雾法在静电吸引装置的基材上形成陶瓷膜。通过喷涂法在陶瓷膜的表面上形成用于静电吸引的电极膜。在电极膜的电极膜的径向上以喷射方式形成环形加热器膜。此外，通过喷涂法在电极膜和加热膜的上表面上形成陶瓷膜。

4. 发明申请

US20090321017A1 Plasma Processing Apparatus and Plasma Processing Method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090321017A1
公开(公告)日：2009-12-31
申请号：US12206021
申请日：2008-09-08
申请人： Tsunehiko Tsubone , Hiroho Kitada , Yosuke Sakai , Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Yutaka Kouzuma
发明人： Tsunehiko Tsubone , Hiroho Kitada , Yosuke Sakai , Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Yutaka Kouzuma
IPC分类号： C23F1/00
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/6719 , H01L21/67248 , H01L21/6831
摘要： There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.
摘要翻译：公开了一种等离子体处理装置，其中放置在位于真空容器中的处理室内的样品台的顶表面上的样品用处理室中形成的等离子体进行处理，其包括在样品台内切割的一组导管哪个冷却介质流动？其加热元件同心地嵌入在作为样品台的顶表面的电介质膜中的膜状加热器; 多个温度控制器分别设置以不同的值流过管道的冷却介质的温度; 以及控制单元，其通过从多个温度控制器供给的冷却介质的管道切换循环。

5. 发明申请

US20070267145A1 Sample table and plasma processing apparatus provided with the same 审中-公开
标题翻译：样品台和等离子体处理装置
公开(公告)号：US20070267145A1
公开(公告)日：2007-11-22
申请号：US11513367
申请日：2006-08-31
申请人： Hiroho Kitada , Kazunori Nakamoto , Masakazu Isozaki
发明人： Hiroho Kitada , Kazunori Nakamoto , Masakazu Isozaki
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/68742 , H01L21/68785
摘要： A plasma processing apparatus includes: two disk-shaped members that are disposed inside the sample table and vertically connected; coolant grooves that are respectively disposed in the outer circumference side and the central side of the upper disk-shaped member and inside which coolants flow; a ring-shaped groove for suppressing heat transfer between these coolant grooves that is disposed between these coolant grooves; a fastening unit that fastens the upper disk-shaped member and the lower disk-shaped member respectively in plural positions of the outer circumference side of the coolant groove of the outer circumference side, and in plural positions of the inner circumference side of the ring-shaped groove; and pusher pins for carrying in/out a sample to the sample mounting surface, wherein the fastening unit of the inner circumference side of the ring-shaped groove and the pusher pins are disposed on a circle circumference within a range of 47 to 68% of the radius of the sample.
摘要翻译：一种等离子体处理装置包括：两个盘状构件，其设置在样品台内并垂直连接; 冷却剂槽分别设置在上盘形部件的外周侧和中心侧，冷却剂流入内部; 用于抑制这些冷却剂槽之间的这些冷却剂槽之间的热传递的环形槽; 紧固单元，其将上部圆盘状构件和下部盘状构件分别固定在外周侧的冷却剂槽的外周侧的多个位置，并且在环状构件的内周侧的多个位置，形槽; 以及用于将样品输送到样品安装面的推压销，其中，所述环状槽的内周侧的紧固单元和所述推动销配置在圆周上，该圆周的范围为47〜68％样品的半径。

6. 发明申请

US20050193951A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050193951A1
公开(公告)日：2005-09-08
申请号：US10793782
申请日：2004-03-08
申请人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译：本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体的材料并且包括Y 2 或其混合物作为其主要组分，其中R 1，R 2，R 3，R 3，R 3，R 3，

7. 发明申请

US20130053997A1 VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20130053997A1
公开(公告)日：2013-02-28
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： B25J9/10 , B25J13/08
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

8. 发明申请

US20080314321A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080314321A1
公开(公告)日：2008-12-25
申请号：US12203804
申请日：2008-09-03
申请人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/458
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译：本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体并包含Y 2 O 3，Yb 2 O 3或YF 3的材料，或它们的主要成分。

9. 发明申请

US20060157198A1 Member for plasma processing apparatus and plasma processing apparatus 审中-公开
标题翻译：等离子处理装置和等离子体处理装置的成员
公开(公告)号：US20060157198A1
公开(公告)日：2006-07-20
申请号：US11065084
申请日：2005-02-25
申请人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
发明人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/3255 , H01J37/32009
摘要： Provided is a plasma processing apparatus, which comprises, as a member facing plasma in a plasma processing chamber, a member composed of a material prepared by incorporating a conductive material in quartz or germanium which is an amorphous base material.
摘要翻译：提供了一种等离子体处理装置，其包括作为在等离子体处理室中面向等离子体的构件，由通过将石英或锗中的导电材料并入作为非晶基材而制备的材料构成的构件。

10. 发明授权

US08828257B2 Plasma processing apparatus and operation method thereof 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US08828257B2
公开(公告)日：2014-09-09
申请号：US12379641
申请日：2009-02-26
申请人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
发明人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
IPC分类号： H05H1/00 , H01L21/306 , C03C15/00 , C03C25/68 , C23F1/00 , H01J37/32 , H01L21/687
CPC分类号： H01L21/68742 , H01J37/32082 , H01J37/3244 , H01J2237/20
摘要： In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.
摘要翻译：在等离子体处理装置中，包括在真空容器中的处理室，以在压力降低的处理室中形成等离子体，处理室内部的下部的样品台，其上表面上加有待处理的晶片通过等离子体放置，样品台中的多个针在垂直方向上移动，使得销抵靠晶片的后侧，以将晶片上下移动到样品台的上表面上，并且多个形成在样品台的上表面中的开口，使得销在开口中移动，当晶片未放置在样品的上表面上时，气体通过开口从与开口连通的供应端口进入处理室阶段。

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