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1. 发明申请

US20090065145A1 Plasma Processing Apparatus And Method Capable Of Adjusting Temperature Within Sample Table 审中-公开
标题翻译：等离子体处理装置和能够调节样品表内温度的方法
公开(公告)号：US20090065145A1
公开(公告)日：2009-03-12
申请号：US12267813
申请日：2008-11-10
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.
摘要翻译：等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极，用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。使用在施加高频功率的处理室内产生的等离子体处理工件。在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

2. 发明申请

US20140011365A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20140011365A1
公开(公告)日：2014-01-09
申请号：US13590242
申请日：2012-08-21
申请人： Naoki YASUI , Norihiko IKEDA , Tooru ARAMAKI , Yasuhiro NISHIMORI
发明人： Naoki YASUI , Norihiko IKEDA , Tooru ARAMAKI , Yasuhiro NISHIMORI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32192 , H01J37/32082 , H01J37/32642 , H01L21/3065
摘要： To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.
摘要翻译：通过改善边缘排除区域的工作特性来提高加工均匀性。提供了一种等离子体处理装置，用于通过在供给处理气体的真空容器中产生等离子体并将其排出到预定压力并通过对放置在真空容器中的样品施加射频偏置来处理样品，其中a 在安装有晶片的样品台的凸部的外侧形成的台阶部布置有施加有射频偏置功率的导电射频环，并且在台阶部设置介电盖环，覆盖无线电所述盖环基本上阻挡从所述射频环对所述等离子体的射频功率的穿透，并且所述射频环顶面被设定为高于晶片顶面。

3. 发明授权

US07947189B2 Vacuum processing apparatus and vacuum processing method of sample 失效
标题翻译：真空加工设备和真空加工方法的样品
公开(公告)号：US07947189B2
公开(公告)日：2011-05-24
申请号：US11696922
申请日：2007-04-05
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C03C25/68 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：一种真空处理方法，其特征在于，将被处理样品安装在放置在能够减压内部的真空容器内的样品架上的样品安装面上，将处理气体和电场供给到真空容器内的样品保持体的上方的空间以产生等离子体，并且将在样品表面上铺设的多层蚀刻成预定形状的膜。在样品安装表面和样品的背面之间供给导热气体，同时根据多层膜的处理进度，导热气体的压力逐步变化的样品。

4. 发明申请

US20100193130A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100193130A1
公开(公告)日：2010-08-05
申请号：US12393272
申请日：2009-02-26
申请人： Masatoshi KAWAKAMI , Tooru ARAMAKI , Shigeru SHIRAYONE , Kenetsu YOKOGAWA , Takumi TANDOU
发明人： Masatoshi KAWAKAMI , Tooru ARAMAKI , Shigeru SHIRAYONE , Kenetsu YOKOGAWA , Takumi TANDOU
IPC分类号： H01L21/306
CPC分类号： H01L21/67109 , H01L21/6831
摘要： In a plasma processing apparatus including a vacuum chamber, a sample table for mounting a member to be processed thereon, the sample table having a coolant path to control a temperature of the member to be processed, an electrostatic chuck power supply for electrostatically adsorbing the member to be processed on the sample table, and a plurality of gas hole parts provided in the sample table to supply heat transfer gas between the member to be processed and the sample table and thereby control a temperature of the member to be processed, each of the gas hole parts includes a boss formed of a dielectric, a sleeve, and a plurality of small tubes, and the small tubes are arranged in a range of 10 to 50% of a radius when measured from a center of the gas hole part toward outside.
摘要翻译：在包括真空室的等离子体处理装置中，用于安装待处理部件的样品台，具有用于控制待处理部件的温度的冷却剂通道的样品台，用于静电吸附该部件的静电卡盘电源在样品台上加工的多个气孔部分和设置在样品台中的多个气孔部分，以在待处理部件和样品台之间提供传热气体，从而控制待处理部件的温度，气孔部分包括由电介质，套管和多个小管形成的凸起，并且当从气孔部分的中心朝向外部测量时，小管被布置在半径的10至50％的范围内。

5. 发明申请

US20080121344A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080121344A1
公开(公告)日：2008-05-29
申请号：US12023874
申请日：2008-01-31
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： C23F1/00 , C23C16/513
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

6. 发明申请

US20070170149A1 Vacuum Processing Apparatus And Vacuum Processing Method Of Sample 失效
标题翻译：真空加工设备及样品真空处理方法
公开(公告)号：US20070170149A1
公开(公告)日：2007-07-26
申请号：US11696922
申请日：2007-04-05
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C03C25/68 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：一种真空处理方法，其特征在于，将被处理样品安装在放置在能够减压内部的真空容器内的样品架上的样品安装面上，将处理气体和电场供给到真空容器内的样品保持体的上方的空间以产生等离子体，并且将在样品表面上铺设的多层蚀刻成预定形状的膜。在样品安装表面和样品的背面之间供给导热气体，同时根据多层膜的处理进度，导热气体的压力逐步变化的样品。

7. 发明申请

US20060283549A1 Plasma processing apparatus and method capable of adjusting temperature within sample table 审中-公开
标题翻译：能够调节样品台内温度的等离子体处理装置和方法
公开(公告)号：US20060283549A1
公开(公告)日：2006-12-21
申请号：US11209743
申请日：2005-08-24
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.
摘要翻译：等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极，用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。使用在施加高频功率的处理室内产生的等离子体处理工件。在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

8. 发明授权

US5745160A Video conversation/monitoring system having a remote monitoring function 失效
标题翻译：具有远程监控功能的视频会话/监控系统
公开(公告)号：US5745160A
公开(公告)日：1998-04-28
申请号：US705314
申请日：1996-08-29
申请人： Kiyoshi Ishida , Nobuyoshi Torii , Toshio Watanabe , Takehiko Yamada , Masato Kidokoro , Toru Ebihara , Atsuko Nakao , Tokusou Matsuda , Nobuyuki Matsuyama , Tooru Aramaki
发明人： Kiyoshi Ishida , Nobuyoshi Torii , Toshio Watanabe , Takehiko Yamada , Masato Kidokoro , Toru Ebihara , Atsuko Nakao , Tokusou Matsuda , Nobuyuki Matsuyama , Tooru Aramaki
IPC分类号： G06F13/00 , H04M3/42 , H04M3/56 , H04M11/00 , H04N1/42 , H04N7/14 , H04N7/173 , H04N21/41 , H04N21/442 , H04Q11/04 , H04N7/15
CPC分类号： H04N7/147 , H04M3/567 , H04N1/42 , H04Q11/0457 , H04M2201/50 , H04Q2213/13034 , H04Q2213/13091 , H04Q2213/13092 , H04Q2213/13104 , H04Q2213/13174 , H04Q2213/13179 , H04Q2213/13206 , H04Q2213/13209 , H04Q2213/13337 , H04Q2213/13376 , H04Q2213/174 , H04Q2213/179 , H04Q2213/337
摘要： A video conversation/monitoring system having a remote monitoring function includes a center station and multiple end stations linked through the ISDN network. The center station includes a video conversation/monitoring circuit, video input device, video output device, audio input device, audio output device, system controller, facsimile, and ISDN line terminating unit. Each end station includes a video conversation/monitoring circuit, system controller, first video input device, second video input device, audio input device, audio output device, calling device, first notification device, second notification device, detection device, facsimile, and ISDN line terminating unit. Based on the remote monitoring function of the video input device and the remote control function of the system controller for switching the video input device, various guidance services are accomplished in addition to the video-phonic conversation service. The integrated unit enables easy desk-top installation, the application of the ISDN network reduces the communication cost, and the provision of various state detection devices in the end stations enables image-based monitoring and state monitoring in addition to the conversation.
摘要翻译：具有远程监控功能的视频会话/监视系统包括通过ISDN网络链接的中心站和多个终端站。中心站包括视频会话/监控电路，视频输入设备，视频输出设备，音频输入设备，音频输出设备，系统控制器，传真机和ISDN线路终端单元。每个终端包括视频会话/监视电路，系统控制器，第一视频输入设备，第二视频输入设备，音频输入设备，音频输出设备，呼叫设备，第一通知设备，第二通知设备，检测设备，传真机和ISDN 线路终端单元。基于视频输入设备的远程监控功能和用于切换视频输入设备的系统控制器的遥控功能，除了视频语音对话服务之外还实现了各种指导服务。集成单元实现了桌面安装的便利，ISDN网络的应用降低了通信成本，并且在终端站中提供各种状态检测设备除了可以进行会话之外还能进行基于图像的监控和状态监控。

9. 发明授权

US09390941B2 Sample processing apparatus, sample processing system, and method for processing sample 有权
标题翻译：样品处理装置，样品处理系统和样品处理方法
公开(公告)号：US09390941B2
公开(公告)日：2016-07-12
申请号：US13510296
申请日：2010-11-16
申请人： Seiichi Watanabe , Yutaka Kozuma , Tooru Aramaki , Naoki Yasui , Norihiko Ikeda , Hiroaki Takikawa
发明人： Seiichi Watanabe , Yutaka Kozuma , Tooru Aramaki , Naoki Yasui , Norihiko Ikeda , Hiroaki Takikawa
IPC分类号： H01L21/306 , C23F1/00 , H01L21/3213 , G03F7/40 , H01J37/32 , H01L21/027 , H01L21/28
CPC分类号： H01L21/32139 , G03F7/40 , H01J37/32357 , H01J37/32807 , H01J37/32816 , H01J37/32871 , H01L21/0273 , H01L21/28035
摘要： There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.
摘要翻译：提供了一种能够以优异的再现性将真空紫外光施加到晶片的整个表面的VUV光处理装置，并且可以以优异的再现性以VUV（真空紫外线）光处理晶片。 VUV光处理装置包括：与气体供给装置和排气装置连接的室，所述室能够减小所述室内的压力; 等离子体光源，其产生包括200nm以下的波长的VUV光，所述等离子体光源包括在所述室中产生等离子体的等离子体发生单元; VUV透射滤光器，其设置在放置有待处理样品的台和样品之间，VUV透射滤光器透射包含200nm以下的波长的VUV光，不透射电子，离子和基团在等离子体中，VUV透射滤光器的外径尺寸大于样品的尺寸。

10. 发明授权

US07303998B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US07303998B2
公开(公告)日：2007-12-04
申请号：US11002265
申请日：2004-12-03
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： H01L21/302
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

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