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1. 发明申请

US20060191482A1 Apparatus and method for processing wafer 审中-公开
标题翻译：晶圆处理装置及方法
公开(公告)号：US20060191482A1
公开(公告)日：2006-08-31
申请号：US11074717
申请日：2005-03-09
申请人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
发明人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
IPC分类号： C23C16/00
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
摘要翻译：提供能够在晶片内获得均匀的CD分布的晶片处理装置。晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和控制电脑。控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

2. 发明申请

US20060291132A1 Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
标题翻译：静电卡盘，晶片加工装置和等离子体处理方法
公开(公告)号：US20060291132A1
公开(公告)日：2006-12-28
申请号：US11370102
申请日：2006-03-08
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
摘要翻译：以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

3. 发明申请

US20060042757A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20060042757A1
公开(公告)日：2006-03-02
申请号：US10927095
申请日：2004-08-27
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： C23F1/00
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

4. 发明申请

US20070240825A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20070240825A1
公开(公告)日：2007-10-18
申请号：US11812289
申请日：2007-06-18
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

5. 外观设计

USD557226S1 Electrode cover for a plasma processing apparatus 有权
标题翻译：等离子体处理装置的电极盖
公开(公告)号：USD557226S1
公开(公告)日：2007-12-11
申请号：US29236981
申请日：2005-08-25
申请人： Takeo Uchino , Hiroyuki Shichida , Masakazu Isozaki , Tsunehiko Tsubone , Akitaka Makino
设计人： Takeo Uchino , Hiroyuki Shichida , Masakazu Isozaki , Tsunehiko Tsubone , Akitaka Makino

6. 发明申请

US20070035908A1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20070035908A1
公开(公告)日：2007-02-15
申请号：US11214861
申请日：2005-08-31
申请人： Hiroyuki Kitsunai , Seiichiro Kanno , Tsunehiko Tsubone
发明人： Hiroyuki Kitsunai , Seiichiro Kanno , Tsunehiko Tsubone
IPC分类号： H01T23/00
CPC分类号： H01L21/6833
摘要： In the plasma processing apparatus including a processing chamber for plasma-processing a processed substrate, plasma generating unit that generates plasma in the processing chamber, and a wafer stage which is mounted in the processing chamber and has an electrostatic chuck for holding the processed substrate, a current detector that detects a current value of leakage current flowing in a circuit formed of a power supply for electrostatic attraction, an electrostatic chuck, a substrate, plasma, a grounded line, and a controlling unit which sets an attraction condition to the current value and controls the applied voltage so that the leakage current reaches the set current value are included.
摘要翻译：在包括处理基板等离子体处理用处理室的等离子体处理装置中，在处理室内产生等离子体的等离子体产生装置以及安装在处理室中并具有用于保持被处理基板的静电卡盘的晶圆台，电流检测器，其检测在由静电吸引用电源形成的电路中流动的漏电流的电流值，静电卡盘，基板，等离子体，接地线以及将吸引条件设定为电流值的控制单元并且控制施加的电压，使得漏电流达到设定电流值。

7. 发明授权

US07567422B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07567422B2
公开(公告)日：2009-07-28
申请号：US11214861
申请日：2005-08-31
申请人： Hiroyuki Kitsunai , Seiichiro Kanno , Tsunehiko Tsubone
发明人： Hiroyuki Kitsunai , Seiichiro Kanno , Tsunehiko Tsubone
IPC分类号： H01T23/00
CPC分类号： H01L21/6833
摘要： In the plasma processing apparatus including a processing chamber for plasma-processing a processed substrate, plasma generating unit that generates plasma in the processing chamber, and a wafer stage which is mounted in the processing chamber and has an electrostatic chuck for holding the processed substrate, a current detector that detects a current value of leakage current flowing in a circuit formed of a power supply for electrostatic attraction, an electrostatic chuck, a substrate, plasma, a grounded line, and a controlling unit which sets an attraction condition to the current value and controls the applied voltage so that the leakage current reaches the set current value are included.
摘要翻译：在包括处理基板等离子体处理用处理室的等离子体处理装置中，在处理室内产生等离子体的等离子体产生装置以及安装在处理室中并具有用于保持被处理基板的静电卡盘的晶圆台，电流检测器，其检测在由静电吸引用电源形成的电路中流动的漏电流的电流值，静电卡盘，基板，等离子体，接地线以及将吸引条件设定为电流值的控制单元并且控制施加的电压，使得漏电流达到设定电流值。

8. 发明申请

US20090178764A1 Plasma processing apparatus including electrostatic chuck with built-in heater 审中-公开
标题翻译：等离子体处理装置，包括带有内置加热器的静电卡盘
公开(公告)号：US20090178764A1
公开(公告)日：2009-07-16
申请号：US12073082
申请日：2008-02-29
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Hiroho Kitada
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Hiroho Kitada
IPC分类号： H01L21/3065
CPC分类号： H01L21/67103 , H01L21/6831
摘要： A plasma processing apparatus is provided that includes a heater-built-in electrostatic chuck, prevents a direct-current potential difference from being made in the plane of a wafer during plasma processing, and performs plasma processing while controlling the temperature of the wafer with good responsiveness without damaging a semiconductor device. The heater-built-in electrostatic chuck of the plasma processing apparatus has a structure in which an insulator, two heaters, an insulator, two electrostatic chuck electrodes having approximately identical areas, and a dielectric film are laminated in ascending order on a conductive base material to which a bias voltage is to be applied. The heaters have approximately identical areas, and are disposed below the two electrostatic chuck electrodes, respectively. Power is provided to the heaters via a low-path filter and a coaxial cable.
摘要翻译：提供一种等离子体处理装置，其包括加热器内置的静电卡盘，防止在等离子体处理期间在晶片的平面中产生直流电位差，并且在良好地控制晶片的温度的同时进行等离子体处理响应性而不损坏半导体器件。等离子体处理装置的加热器内置的静电卡盘具有这样的结构，其中绝缘体，两个加热器，绝缘体，具有近似相同面积的两个静电卡盘电极和电介质膜以升序层叠在导电基材上施加偏置电压。加热器具有大致相同的面积，分别设置在两个静电吸盘电极的下方。通过低通滤波器和同轴电缆将功率提供给加热器。

9. 发明申请

US20090065145A1 Plasma Processing Apparatus And Method Capable Of Adjusting Temperature Within Sample Table 审中-公开
标题翻译：等离子体处理装置和能够调节样品表内温度的方法
公开(公告)号：US20090065145A1
公开(公告)日：2009-03-12
申请号：US12267813
申请日：2008-11-10
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.
摘要翻译：等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极，用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。使用在施加高频功率的处理室内产生的等离子体处理工件。在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

10. 发明申请

US20080280451A1 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20080280451A1
公开(公告)日：2008-11-13
申请号：US12073048
申请日：2008-02-28
申请人： Yutaka Ohmoto , Mamoru Yakushiji , Yutaka Kouzuma , Ken Yoshioka , Tsunehiko Tsubone
发明人： Yutaka Ohmoto , Mamoru Yakushiji , Yutaka Kouzuma , Ken Yoshioka , Tsunehiko Tsubone
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/67248
摘要： A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.
摘要翻译：一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。

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