专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060191482A1 Apparatus and method for processing wafer 审中-公开
标题翻译：晶圆处理装置及方法
公开(公告)号：US20060191482A1
公开(公告)日：2006-08-31
申请号：US11074717
申请日：2005-03-09
申请人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
发明人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
IPC分类号： C23C16/00
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
摘要翻译：提供能够在晶片内获得均匀的CD分布的晶片处理装置。晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和控制电脑。控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

2. 发明申请

US20060291132A1 Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
标题翻译：静电卡盘，晶片加工装置和等离子体处理方法
公开(公告)号：US20060291132A1
公开(公告)日：2006-12-28
申请号：US11370102
申请日：2006-03-08
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
摘要翻译：以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

3. 发明授权

US07147747B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07147747B2
公开(公告)日：2006-12-12
申请号：US10377826
申请日：2003-03-04
申请人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
发明人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： G01N21/73 , H01J37/32935 , H01J37/32963 , H01L21/67253 , H05H1/0037
摘要： A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.
摘要翻译：一种具有处理室的等离子体处理装置，其中待处理物体经受等离子体处理，其包括用于分光计单元的光接收部分，运算单元，数据库，确定单元和装置控制器。确定单元确定处理室中达到调味品终点的状态。执行条件的确定，使得发现通过多变量分析从一批等离子体发射数据得到的一个或多个输出信号与从前一批等离子体发射数据得到的一个或多个输出信号之间的一个或多个差异，平均值确定一批中的差异值，确定一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差，并将该值与预设阈值进行比较。

4. 发明授权

US07147748B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07147748B2
公开(公告)日：2006-12-12
申请号：US10779742
申请日：2004-02-18
申请人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
发明人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： G01N21/73 , H01J37/32935 , H01J37/32963 , H01L21/67253 , H05H1/0037
摘要： A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.
摘要翻译：一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置具有其中对基板进行等离子体处理的处理室，受光部，光谱仪单元，运算单元，数据库，确定单元，用于确定终点调味料作为处理室的条件，以及设备控制器。该方法包括以下步骤：将从光谱仪单元输出的多通道信号转换为一批输出信号，发现前一批次的输出信号和输出信号之间的差异，确定一批中的差异的平均值，一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差，并将确定的值与预设阈值进行比较。

5. 发明授权

US06677167B2 Wafer processing apparatus and a wafer stage and a wafer processing method 失效
标题翻译：晶片处理装置和晶片台以及晶片处理方法
公开(公告)号：US06677167B2
公开(公告)日：2004-01-13
申请号：US10086722
申请日：2002-03-04
申请人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburou Kanai , Toshio Masuda
发明人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburou Kanai , Toshio Masuda
IPC分类号： H01L2166
CPC分类号： H01L21/67109
摘要： A wafer processing apparatus comprising a wafer stage, wherein a semiconductor wafer is mounted on the wafer stage so as to process the semiconductor wafer, wherein a holding mechanism of the wafer stage is commonly used for a plurality of wafer stages, and accordingly, the wafer stage can be changed into a wafer stage having a different function so as to process the semiconductor wafer.
摘要翻译：一种晶片处理装置，包括晶圆台，其中半导体晶片安装在晶片台上以便处理半导体晶片，其中晶片台的保持机构通常用于多个晶片台，因此，晶片可以将阶段改变为具有不同功能的晶片台，以便处理半导体晶片。

6. 发明授权

US07058470B2 Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 有权
标题翻译：监控和/或控制半导体制造装置的方法及其系统
公开(公告)号：US07058470B2
公开(公告)日：2006-06-06
申请号：US10999006
申请日：2004-11-30
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter. The process recipe control unit includes a controller which controls at least one of a plurality of different processing performances for processing of the semiconductor wafer.
摘要翻译：用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测的处理结果与预先设定的值进行比较，以控制处理条件或输入参数。处理配方控制单元包括控制器，用于控制用于处理半导体晶片的多个不同处理性能中的至少一个。

7. 发明申请

US20050087298A1 Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 有权
标题翻译：监控和/或控制半导体制造装置的方法及其系统
公开(公告)号：US20050087298A1
公开(公告)日：2005-04-28
申请号：US10999006
申请日：2004-11-30
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G05B19/418 , H01L21/66 , C23F1/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition. The process recipe control unit includes a controller which controls at least one among a plurality of different processing performances for processing of the semiconductor wafer.
摘要翻译：用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测处理结果与预先设定的值进行比较，以控制处理条件。处理配方控制单元包括控制用于处理半导体晶片的多个不同处理性能中的至少一个的控制器。

8. 发明授权

US06776872B2 Data processing apparatus for semiconductor processing apparatus 有权
标题翻译：半导体处理装置的数据处理装置
公开(公告)号：US06776872B2
公开(公告)日：2004-08-17
申请号：US10087982
申请日：2002-03-05
申请人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
发明人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
IPC分类号： H05H100
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A data processing apparatus for a semiconductor manufacturing apparatus includes a semiconductor manufacturing apparatus for executing processing for a wafer, a data collecting semiconductor device for collecting processing data generated in association with the processing, and a data copying semiconductor device for extracting the processing data collected in the data collecting semiconductor device and for producing a copy of the processing data. The apparatus may include a data analyzer for analyzing the data copy produced by the data copying semiconductor device and for diagnosing a processing state of the processing apparatus.
摘要翻译：一种半导体制造装置的数据处理装置包括：用于执行晶片处理的半导体制造装置，用于收集与该处理相关联地生成的处理数据的数据收集半导体装置;以及数据复制半导体装置，用于提取收集的处理数据数据采集半导体器件和用于产生处理数据的副本。该装置可以包括用于分析由数据复制半导体器件产生的数据副本并用于诊断处理装置的处理状态的数据分析器。

9. 发明申请

US20070051470A1 Plasma processing apparatus and method 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20070051470A1
公开(公告)日：2007-03-08
申请号：US11362024
申请日：2006-02-27
申请人： Takehisa Iwakoshi , Junichi Tanaka , Hiroyuki Kitsunai , Toshio Masuda , Daisuke Shiraishi
发明人： Takehisa Iwakoshi , Junichi Tanaka , Hiroyuki Kitsunai , Toshio Masuda , Daisuke Shiraishi
IPC分类号： B08B3/12 , B08B6/00 , G06F19/00 , C23C16/00 , C23F1/00
CPC分类号： H01J37/32935 , B08B7/0035
摘要： A plasma processing apparatus includes: a processing chamber; a state detector for detecting a state of plasma in the processing chamber; an input unit for inputting process result data of a specimen processed in the plasma processing chamber; and a controller including a prediction equation forming unit for forming a prediction equation of a process result in accordance with plasma state data detected with the state detector for the plasma process simulating a specimen existing state in the processing chamber in a specimen non-placed state and process result data of the specimen input with the input unit and processed by the plasma process in a specimen placed state, and storing the prediction equation, wherein the controller predicts the process result of a succeeding plasma process in accordance with plasma state data newly acquired via the state detector in the specimen non-placed state and the stored prediction equation.
摘要翻译：一种等离子体处理装置，包括：处理室; 状态检测器，用于检测处理室中的等离子体的状态; 用于输入在所述等离子体处理室中处理的样本的处理结果数据的输入单元; 以及控制器，其包括预测方程式形成单元，用于根据用于等离子体处理的状态检测器检测的等离子体状态数据形成处理结果的预测方程，所述等离子体处理模拟在处理室中的样本未放置状态，使用输入单元输入的样本的处理结果数据，并且在样本放置状态下通过等离子体处理进行处理，并存储预测方程，其中控制器根据根据新近获取的等离子体状态数据预测后续等离子体处理的处理结果样品未放置状态下的状态检测器和存储的预测方程。

10. 发明申请

US20060199288A1 Data processing apparatus for semiconductor processing apparatus 审中-公开
标题翻译：半导体处理装置的数据处理装置
公开(公告)号：US20060199288A1
公开(公告)日：2006-09-07
申请号：US11429199
申请日：2006-05-08
申请人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
发明人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
IPC分类号： H01L21/66
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.
摘要翻译：通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式