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1. 发明申请

US20060042757A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20060042757A1
公开(公告)日：2006-03-02
申请号：US10927095
申请日：2004-08-27
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： C23F1/00
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

2. 发明申请

US20070240825A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20070240825A1
公开(公告)日：2007-10-18
申请号：US11812289
申请日：2007-06-18
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

3. 发明授权

US06180019B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06180019B2
公开(公告)日：2001-01-30
申请号：US08979949
申请日：1997-11-26
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H102
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

4. 发明授权

US06846363B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06846363B2
公开(公告)日：2005-01-25
申请号：US10139302
申请日：2002-05-07
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H01J37/32 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

5. 发明授权

US06833051B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06833051B2
公开(公告)日：2004-12-21
申请号：US10139281
申请日：2002-05-07
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H100
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma processing apparatus includes a vacuum chamber having a structure that surrounds a space where plasma is generated, a sample stage disposed in the chamber on which a sample to be processed is placed and coil antenna providing an electric field to the space. The structure has a non-conductive member surrounding the space and a conductive member covering the non-conductive member, both of which are disposed between the antenna and the space. The conductive member is electrically floated at least when the plasma is generated.
摘要翻译：等离子体处理装置包括具有围绕产生等离子体的空间的结构的真空室，设置在其上放置待处理样品的室中的样品台和向该空间提供电场的线圈天线。该结构具有围绕空间的非导电构件和覆盖非导电构件的导电构件，两者都设置在天线和空间之间。至少当产生等离子体时，导电构件电漂浮。

6. 发明授权

US06481370B2 Plasma processsing apparatus 有权
标题翻译：等离子处理装置
公开(公告)号：US06481370B2
公开(公告)日：2002-11-19
申请号：US09732307
申请日：2000-12-08
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： C23C1600
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

7. 发明授权

US06499424B2 Plasma processing apparatus and method 有权
公开(公告)号：US06499424B2
公开(公告)日：2002-12-31
申请号：US09909879
申请日：2001-07-23
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H100
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

8. 发明授权

US06756737B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06756737B2
公开(公告)日：2004-06-29
申请号：US10143790
申请日：2002-05-14
申请人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
发明人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
IPC分类号： H01J724
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321
摘要： The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.
摘要翻译：本发明的主要目的是在使用在连接点处串联连接的电感耦合天线和静电电容耦合天线产生的等离子体的晶片处理期间，抑制副产物在真空室的内壁上的沉积。通过可变阻抗负载接地电感耦合天线和静电电容耦合天线的连接点并改变可变阻抗负载的阻抗，可以抑制真空室内壁上的副产物的沉积，从而控制通过静电电容耦合放电在室内产生的等离子体的比例。

9. 发明授权

US06388382B1 Plasma processing apparatus and method 有权
公开(公告)号：US06388382B1
公开(公告)日：2002-05-14
申请号：US09520831
申请日：2000-03-08
申请人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
发明人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
IPC分类号： H05B3700
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321
摘要： The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.

10. 发明授权

US06812725B2 Semiconductor processing apparatus and wafer sensor module 失效
标题翻译：半导体处理装置和晶片传感器模块
公开(公告)号：US06812725B2
公开(公告)日：2004-11-02
申请号：US10083255
申请日：2002-02-27
申请人： Ryujiro Udo , Masatsugu Arai , Manabu Edamura
发明人： Ryujiro Udo , Masatsugu Arai , Manabu Edamura
IPC分类号： G01R3100
CPC分类号： G01R31/2862
摘要： A semiconductor processing apparatus for processing a semiconductor in a processing chamber separated from the air wherein the processing chamber contains a wafer stage on which there is positioned a wafer sensor module equipped with sensor probes, each sensor probe capable of detecting at least one of electric current, voltage and temperature of an article to be processed and placed on the wafer sensor module, which is carried into the processing chamber by a transporting means for the article to be processed, and detected values by the sensor probes being converted to optical signals and led to outside of the processing chamber, can optimize conditions for processing the article easily and in a short time without lowering throughput.
摘要翻译：一种用于处理与空气分离的处理室中的半导体的半导体处理装置，其中所述处理室包含晶片台，所述晶片台配置有配备有传感器探针的晶片传感器模块，每个传感器探针能够检测电流中的至少一个待处理物品的电压和温度，并将其放置在通过待处理物品的输送装置输送到处理室中的晶片传感器模块上，并将传感器探针的检测值转换为光信号并引导在处理室外部，可以在不降低生产能力的情况下，在短时间内优化处理物品的条件。

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