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1. 发明申请

US20080280451A1 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20080280451A1
公开(公告)日：2008-11-13
申请号：US12073048
申请日：2008-02-28
申请人： Yutaka Ohmoto , Mamoru Yakushiji , Yutaka Kouzuma , Ken Yoshioka , Tsunehiko Tsubone
发明人： Yutaka Ohmoto , Mamoru Yakushiji , Yutaka Kouzuma , Ken Yoshioka , Tsunehiko Tsubone
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/67248
摘要： A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.
摘要翻译：一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。

2. 发明申请

US20090218316A1 MANUFACTURING METHOD IN PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备的制造方法
公开(公告)号：US20090218316A1
公开(公告)日：2009-09-03
申请号：US12038841
申请日：2008-02-28
申请人： Yutaka KOUZUMA , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
发明人： Yutaka KOUZUMA , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
IPC分类号： C23F1/00
CPC分类号： H01L21/67103 , H01J2237/2001 , H01L21/67248
摘要： A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.
摘要翻译：一种制造方法包括以下步骤：将由电介质组成的膜放置在样品台的顶表面上，在由电介质制成的膜上形成膜状加热器，向加热器供电以检测温度分布，调节基于温度分布的检测结果使加热器的电阻值，使得温度分布具有预定值，然后在加热器上形成由电介质组成的膜。

3. 发明授权

US08092637B2 Manufacturing method in plasma processing apparatus 有权
标题翻译：等离子体处理装置的制造方法
公开(公告)号：US08092637B2
公开(公告)日：2012-01-10
申请号：US12038841
申请日：2008-02-28
申请人： Yutaka Kouzuma , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
发明人： Yutaka Kouzuma , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67103 , H01J2237/2001 , H01L21/67248
摘要： A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.
摘要翻译：一种制造方法包括以下步骤：将由电介质组成的膜放置在样品台的顶表面上，在由电介质制成的膜上形成膜状加热器，向加热器供电以检测温度分布，调节基于温度分布的检测结果使加热器的电阻值，使得温度分布具有预定值，然后在加热器上形成由电介质组成的膜。

4. 发明授权

US08282848B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08282848B2
公开(公告)日：2012-10-09
申请号：US12073048
申请日：2008-02-28
申请人： Yutaka Ohmoto , Mamoru Yakushiji , Yutaka Kouzuma , Ken Yoshioka , Tsunehiko Tsubone
发明人： Yutaka Ohmoto , Mamoru Yakushiji , Yutaka Kouzuma , Ken Yoshioka , Tsunehiko Tsubone
IPC分类号： G01L21/30 , G01R31/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/67248
摘要： A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.
摘要翻译：一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。

5. 发明申请

US20090321017A1 Plasma Processing Apparatus and Plasma Processing Method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090321017A1
公开(公告)日：2009-12-31
申请号：US12206021
申请日：2008-09-08
申请人： Tsunehiko Tsubone , Hiroho Kitada , Yosuke Sakai , Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Yutaka Kouzuma
发明人： Tsunehiko Tsubone , Hiroho Kitada , Yosuke Sakai , Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Yutaka Kouzuma
IPC分类号： C23F1/00
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/6719 , H01L21/67248 , H01L21/6831
摘要： There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.
摘要翻译：公开了一种等离子体处理装置，其中放置在位于真空容器中的处理室内的样品台的顶表面上的样品用处理室中形成的等离子体进行处理，其包括在样品台内切割的一组导管哪个冷却介质流动？其加热元件同心地嵌入在作为样品台的顶表面的电介质膜中的膜状加热器; 多个温度控制器分别设置以不同的值流过管道的冷却介质的温度; 以及控制单元，其通过从多个温度控制器供给的冷却介质的管道切换循环。

6. 发明申请

US20080170969A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080170969A1
公开(公告)日：2008-07-17
申请号：US11680118
申请日：2007-02-28
申请人： Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Tsunehiko Tsubone , Kazunori Nakamoto
发明人： Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Tsunehiko Tsubone , Kazunori Nakamoto
IPC分类号： G05D23/00
CPC分类号： H01L21/6831 , G05D23/1932 , G05D23/22 , H01L21/67109 , H01L21/67276
摘要： It is possible to provide a plasma etching apparatus that controls the temperature of a sample at a higher speed and with more accuracy to improve the efficiency of processing the sample. A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.
摘要翻译：可以提供一种等离子体蚀刻装置，其以更高的速度和更高的精度来控制样品的温度，以提高样品的处理效率。一种等离子体处理装置，其特征在于，包括要被减压和排出的处理室，设置在处理室中并具有放置有待处理基板的样品放置面的样品放置电极，在处理室中产生等离子体的电磁产生装置向处理室供给处理气体的供给系统，在处理室内排出的真空排气系统，设置在样本设置电极上的加热器层和基底温度监视器，估计晶片的晶片温度估计单元来自基础温度监视器和等离子体形成电源的温度，以及根据来自温度估计单元的输出来调节加热器的控制器。

7. 发明授权

US06180019B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06180019B2
公开(公告)日：2001-01-30
申请号：US08979949
申请日：1997-11-26
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H102
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

8. 发明授权

US06846363B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06846363B2
公开(公告)日：2005-01-25
申请号：US10139302
申请日：2002-05-07
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H01J37/32 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

9. 发明授权

US06833051B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06833051B2
公开(公告)日：2004-12-21
申请号：US10139281
申请日：2002-05-07
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H100
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma processing apparatus includes a vacuum chamber having a structure that surrounds a space where plasma is generated, a sample stage disposed in the chamber on which a sample to be processed is placed and coil antenna providing an electric field to the space. The structure has a non-conductive member surrounding the space and a conductive member covering the non-conductive member, both of which are disposed between the antenna and the space. The conductive member is electrically floated at least when the plasma is generated.
摘要翻译：等离子体处理装置包括具有围绕产生等离子体的空间的结构的真空室，设置在其上放置待处理样品的室中的样品台和向该空间提供电场的线圈天线。该结构具有围绕空间的非导电构件和覆盖非导电构件的导电构件，两者都设置在天线和空间之间。至少当产生等离子体时，导电构件电漂浮。

10. 发明授权

US06481370B2 Plasma processsing apparatus 有权
标题翻译：等离子处理装置
公开(公告)号：US06481370B2
公开(公告)日：2002-11-19
申请号：US09732307
申请日：2000-12-08
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： C23C1600
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

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