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1. 发明授权

US06635498B2 Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch 有权
标题翻译：在底部电极蚀刻期间用侧壁构图FeRAM电容器的方法
公开(公告)号：US06635498B2
公开(公告)日：2003-10-21
申请号：US10222718
申请日：2002-08-16
申请人： Scott R. Summerfelt , Guoqiang Xing , Luigi Colombo , Sanjeev Aggarwal , Theodore S. Moise, IV
发明人： Scott R. Summerfelt , Guoqiang Xing , Luigi Colombo , Sanjeev Aggarwal , Theodore S. Moise, IV
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/31122 , H01L21/32136 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the patterning of a top electrode layer and a dielectric layer to form a capacitor stack structure having sidewalls associated therewith. Prior to patterning the bottom electrode layer, a protective film is formed on the sidewalls of the capacitor stack structure in order to protect the dielectric material from conductive contaminants associated with a subsequent patterning of the bottom electrode layer.
摘要翻译：公开了一种制造铁电电容器的方法。该方法包括图案化顶部电极层和电介质层以形成具有与其相关联的侧壁的电容器堆叠结构。在图形化底部电极层之前，在电容器堆叠结构的侧壁上形成保护膜，以保护电介质材料免受与随后的底部电极层的图案化有关的导电污染物的影响。

2. 发明授权

US06902939B2 Integrated circuit and method 有权
标题翻译：集成电路及方法
公开(公告)号：US06902939B2
公开(公告)日：2005-06-07
申请号：US10223643
申请日：2002-08-19
申请人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
发明人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
IPC分类号： H01L21/302 , H01L21/02 , H01L21/033 , H01L21/3065 , H01L21/311 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L21/00
CPC分类号： H01L27/11502 , H01L21/0332 , H01L21/31116 , H01L21/31144 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
摘要翻译：在电极之间与电介质之间的电介质与绝缘扩散阻挡层之间的电介质接触电容器的通孔蚀刻包括基于F的电介质蚀刻和基于Cl和F的势垒蚀刻的两步蚀刻。

3. 发明授权

US06534809B2 Hardmask designs for dry etching FeRAM capacitor stacks 有权
标题翻译：硬掩模设计用于干蚀刻FeRAM电容器堆叠
公开(公告)号：US06534809B2
公开(公告)日：2003-03-18
申请号：US09741479
申请日：2000-12-19
申请人： Theodore Moise , Stephen R. Gilbert , Scott R. Summerfelt , Guoqiang Xing , Luigi Colombo
发明人： Theodore Moise , Stephen R. Gilbert , Scott R. Summerfelt , Guoqiang Xing , Luigi Colombo
IPC分类号： H01L2994
CPC分类号： H01L28/55 , H01L21/31122 , H01L21/31144 , H01L21/32136 , H01L21/32139
摘要： An embodiment of the instant invention is a ferroelectric capacitor formed over a semiconductor substrate, the ferroelectric capacitor comprising: a bottom electrode formed over the semiconductor substrate, the bottom electrode comprised of a bottom electrode material (304 of FIG. 4a); a top electrode formed over the bottom electrode and comprised of a first electrode material (306and 308 of FIG. 4a); a ferroelectric material (306 of FIG. 4a) situated between the top electrode and the bottom electrode; and a hardmask formed on the top electrode and comprising a bottom hardmask layer (402 of FIG. 4a) and a top hardmask layer (408 of FIG. 4a) formed on the bottom hardmask layer, the top hardmask layer able to with stand etchants used to etch the bottom electrode, the top electrode, and the ferroelectric material to leave the bottom hardmask layer substantially unremoved during the etch and the bottom hardmask layer being comprised of a conductive material which substantially acts as a hydrogen diffusion barrier.
摘要翻译：本发明的一个实施方案是形成在半导体衬底上的铁电电容器，所述铁电电容器包括：形成在所述半导体衬底上的底部电极，所述底部电极由底部电极材料（图4a的304）组成; 形成在底部电极上并由第一电极材料（图4a的306和308）组成的顶部电极; 位于顶部电极和底部电极之间的铁电材料（图4a的306）以及形成在顶部电极上并包括底部硬掩模层（图4a的402）和形成在底部硬掩模层上的顶部硬掩模层（图4a的408）的硬掩模，所述顶部硬掩模层能够使用支架蚀刻剂蚀刻底部电极，顶部电极和铁电材料以使蚀刻期间底部硬掩模层基本上不被去除，并且底部硬掩模层由基本上充当氢扩散阻挡层的导电材料构成。

4. 发明授权

US07361599B2 Integrated circuit and method 有权
标题翻译：集成电路及方法
公开(公告)号：US07361599B2
公开(公告)日：2008-04-22
申请号：US11145663
申请日：2005-06-06
申请人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
发明人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
IPC分类号： H01L21/302
CPC分类号： H01L27/11502 , H01L21/31116 , H01L21/76895 , H01L27/10811 , H01L27/10814 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
摘要翻译：在电极之间与电介质之间的电介质与绝缘扩散阻挡层之间的电介质接触电容器的通孔蚀刻包括基于F的电介质蚀刻和基于Cl和F的势垒蚀刻的两步蚀刻。

5. 发明授权

US06548343B1 Method of fabricating a ferroelectric memory cell 有权
标题翻译：制造铁电存储单元的方法
公开(公告)号：US06548343B1
公开(公告)日：2003-04-15
申请号：US09702985
申请日：2000-10-31
申请人： Scott R. Summerfelt , Theodore S. Moise , Guoqiang Xing , Luigi Colombo , Tomoyuki Sakoda , Stephen R. Gilbert , Alvin L. S. Loke , Shawming Ma , Rahim Kavari , Laura Wills-Mirkarimi , Jun Amano
发明人： Scott R. Summerfelt , Theodore S. Moise , Guoqiang Xing , Luigi Colombo , Tomoyuki Sakoda , Stephen R. Gilbert , Alvin L. S. Loke , Shawming Ma , Rahim Kavari , Laura Wills-Mirkarimi , Jun Amano
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure (124 of FIG. 1), the bottom electrode having a top surface and sides; forming a capacitor dielectric (126 of FIG. 1) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode (128 and 130 of FIG. 1) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer (118 and 120 of FIG. 1) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.
摘要翻译：本发明的一个实施例是制造位于结构上方的铁电电容器的方法，所述方法包括以下步骤：在所述结构（图1的124）上形成底电极，所述底电极具有顶表面和边; 在底部电极上形成由铁电材料构成的电容器电介质（图1的126），电容器电介质具有顶表面和侧面; 在电容器电介质上形成顶电极（图1的128和130），顶电极具有顶表面和侧面，铁电电容器由底电极，电容器电介质和顶电极组成; 在底电极侧，电容器电介质侧和顶电极侧形成阻挡层（图1的118和120）; 在所述阻挡层和所述结构上形成电介质层，所述电介质具有顶表面和底表面; 并且在由选自氩，氮及其组合的气体组成的环境中在400-900℃的温度下进行热步骤，所述环境包括：在步骤形成阻挡层的步骤。

6. 发明授权

US06444542B2 Integrated circuit and method 有权
标题翻译：集成电路及方法
公开(公告)号：US06444542B2
公开(公告)日：2002-09-03
申请号：US09826283
申请日：2001-04-03
申请人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
发明人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
IPC分类号： H01L2176
CPC分类号： H01L27/11502 , H01L21/0332 , H01L21/31116 , H01L21/31144 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
摘要翻译：在电极之间与电介质之间的电介质与绝缘扩散阻挡层之间的电介质接触电容器的通孔蚀刻包括基于F的电介质蚀刻和基于Cl和F的势垒蚀刻的两步蚀刻。

7. 发明授权

US06211035B1 Integrated circuit and method 有权
标题翻译：集成电路及方法
公开(公告)号：US06211035B1
公开(公告)日：2001-04-03
申请号：US09392988
申请日：1999-09-09
申请人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
发明人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
IPC分类号： H01L2120
CPC分类号： H01L27/11502 , H01L21/0332 , H01L21/31116 , H01L21/31144 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
摘要翻译：在电极之间与电介质之间的电介质与绝缘扩散阻挡层之间的电介质接触电容器的通孔蚀刻包括基于F的电介质蚀刻和基于Cl和F的势垒蚀刻的两步蚀刻。

8. 发明授权

US6153490A Method for forming integrated circuit capacitor and memory 失效
公开(公告)号：US6153490A
公开(公告)日：2000-11-28
申请号：US105738
申请日：1998-06-26
申请人： Guoqiang Xing , Scott R. Summerfelt , Rajesh Khamankar
发明人： Guoqiang Xing , Scott R. Summerfelt , Rajesh Khamankar
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/8242 , H01L21/20 , H01L21/00 , H01L21/302 , H01L21/44
CPC分类号： H01L27/10852 , H01L21/32136 , H01L21/32139 , H01L28/60 , H01L28/55
摘要： A method for etching a feature in a platinum layer 834 overlying a second material 818 without substantially etching the second material. The method includes the the steps of: forming an adhesion-promoting layer 824 between the platinum layer and the second material; forming a hardmask layer 829 over the platinum layer; patterning and etching the hardmask layer in accordance with desired dimensions of the feature; and etching portions of the platinum layer not covered by the hardmask layer 832, the etching stopping on the adhesion-promoting layer. In further embodiments the adhesion-promoting and hardmask layers are Ti--Al--N including at least 1% of aluminum.

9. 发明授权

US06485988B2 Hydrogen-free contact etch for ferroelectric capacitor formation 有权
标题翻译：用于铁电电容器形成的无氢接触蚀刻
公开(公告)号：US06485988B2
公开(公告)日：2002-11-26
申请号：US09741650
申请日：2000-12-19
申请人： Shawming Ma , Guoqiang Xing , Rahim Kavari , Scott R. Summerfelt , Tomoyuki Sakoda
发明人： Shawming Ma , Guoqiang Xing , Rahim Kavari , Scott R. Summerfelt , Tomoyuki Sakoda
IPC分类号： H01L2100
CPC分类号： H01L21/31122 , H01L21/32136 , H01L21/76838 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/60
摘要： An embodiment of the instant invention is a method of forming a conductive contact to a top electrode (308 and 310 of FIG. 4d) of a ferroelectric capacitor comprised of a bottom electrode (304 of FIG. 4d) situated under the top electrode and a ferroelectric material (306 of FIG. 4d) situated between the top electrode and the bottom electrode, the method comprising the steps of: forming a layer (408 or 312 of FIG. 4) over the top electrode; forming an opening (414 of FIG. 4d) in the layer to expose a portion of the top electrode by etching the opening into the layer using a hydrogen-free etchant; and depositing conductive material (432 of FIG. 4d) in the opening to form an electrical connection with the top electrode.
摘要翻译：本发明的一个实施方案是一种形成导电接触的方法，该导电接触由位于顶部电极下方的底部电极（图4d的304）构成的铁电电容器的顶部电极（图4d的308和310）和铁电材料（图4d的306）位于顶部电极和底部电极之间，该方法包括以下步骤：在顶部电极上形成层（图4的408或312）; 在所述层中形成开口（图4d的414），以通过使用无氢蚀刻剂将所述开口蚀刻到所述层中来暴露所述顶部电极的一部分; 以及将导电材料（图4d的432）沉积在开口中以与顶部电极形成电连接。

10. 发明授权

US06555431B1 Method for forming integrated circuit capacitor and memory 有权
标题翻译：用于形成集成电路电容器和存储器的方法
公开(公告)号：US06555431B1
公开(公告)日：2003-04-29
申请号：US09712774
申请日：2000-11-16
申请人： Guoqiang Xing , Scott R. Summerfelt , Rajesh Khamankar
发明人： Guoqiang Xing , Scott R. Summerfelt , Rajesh Khamankar
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L21/32136 , H01L21/32139 , H01L28/55 , H01L28/60
摘要： A method for etching a feature in a platinum layer 834 overlying a second material 818 without substantially etching the second material. The method includes the the steps of: forming an adhesion-promoting layer 824 between the platinum layer and the second material; forming a hardmask layer 829 over the platinum layer; patterning and etching the hardmask layer in accordance with desired dimensions of the feature; and etching portions of the platinum layer not covered by the hardmask layer 832, the etching stopping on the adhesion-promoting layer. In further embodiments the adhesion-promoting and hardmask layers are Ti—Al—N including at least 1% of aluminum.
摘要翻译：一种用于蚀刻铂层834中覆盖第二材料818而不基本上蚀刻第二材料的特征的方法。该方法包括以下步骤：在铂层和第二材料之间形成粘合促进层824; 在铂层上形成硬掩模层829; 根据特征的期望尺寸对硬掩模层进行图案化和蚀刻; 并且蚀刻未被硬掩模层832覆盖的铂层的部分，蚀刻停止在粘合促进层上。在另外的实施方案中，粘合促进和硬掩模层是包括至少1％的铝的Ti-Al-N。

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