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1. 发明授权

US4396901A Method for correcting deflection distortion in an apparatus for charged particle lithography 失效
标题翻译：用于校正带电粒子光刻装置中的偏转变形的方法
公开(公告)号：US4396901A
公开(公告)日：1983-08-02
申请号：US227940
申请日：1981-01-23
申请人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
发明人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
IPC分类号： H01L21/027 , H01J37/304 , H01J29/70 , G06K7/10
CPC分类号： H01J37/304
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.
摘要翻译：在用于校正通过扫描样品上的图案的装置中产生的偏转失真的方法中，通过扫描带电粒子束而产生的偏转变形的校正根据待部分的高度（变形）基于在通过扫描带电粒子束在具有至少两个具有不等高度的参考水平的标记上获得的标记的各个参考水平处的偏转失真的校正幅度的样本（例如，晶片）上线性化沿光轴的方向。

2. 发明授权

US4577111A Apparatus for electron beam lithography 失效
标题翻译：电子束光刻设备
公开(公告)号：US4577111A
公开(公告)日：1986-03-18
申请号：US516091
申请日：1983-07-22
申请人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
发明人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
IPC分类号： G03F7/20 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/30 , H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3174 , H01L21/30 , H01J2237/1505 , H01J2237/152 , H01J2237/30472 , H01J2237/31776
摘要： An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.
摘要翻译：用于电子束光刻的装置包括至少一个掩模，其配备有要经受来自电子束发生器的电子束的多边形孔，用于对掩模的多边形孔径进行缩小和成像的电子透镜系统和用于电子的螺线管线圈光束旋转调节放置在掩模和终末电子透镜之间。

3. 发明授权

US4443703A Method and apparatus of deflection calibration for a charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置的偏转校准方法和装置
公开(公告)号：US4443703A
公开(公告)日：1984-04-17
申请号：US347719
申请日：1982-02-10
申请人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
发明人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
IPC分类号： H01J37/147 , H01J37/153 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/147 , H01J37/304
摘要： A method and apparatus of deflection calibration for a charged particle beam exposure apparatus having an electromagnetic deflector and an electrostatic deflector both for deflecting a charged particle beam and a movable stage structure. The electromagnetic deflector is previously subjected to a calibration operation known per se. With a fiducial mark positioned in a predetermined location, the beam is deflected by the calibrated electromagnetic deflector instead of moving the stage structure, the beam is then deflected by the electrostatic deflector to detect the location of the fiducial mark, and deflection data are measured of the electrostatic deflection for the detection of the location of the fiducial mark. According to the present invention the calibration is performed in a short time without causing degradation of the precision of, e.g., lithography due to heat generated by movement of the stage structure.
摘要翻译：一种具有用于偏转带电粒子束和可移动平台结构的电磁偏转器和静电偏转器的带电粒子束曝光装置的偏转校准方法和装置。电磁偏转器预先经过本身已知的校准操作。将基准标记定位在预定位置时，光束被校准的电磁偏转器偏转，而不是移动平台结构，然后光束被静电偏转器偏转以检测基准标记的位置，并且测量偏转数据用于检测静电偏转的位置的基准标记。根据本发明，在短时间内执行校准，而不会导致由于台架结构的移动产生的热量导致的光刻的精度的降低。

4. 发明授权

US4489241A Exposure method with electron beam exposure apparatus 失效
标题翻译：电子束曝光装置曝光方法
公开(公告)号：US4489241A
公开(公告)日：1984-12-18
申请号：US386579
申请日：1982-06-09
申请人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
发明人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
IPC分类号： H01J37/304 , H01L21/027 , H01L21/30 , H01L23/544 , H01J37/317
CPC分类号： H01L23/544 , H01J37/3045 , H01L21/0277 , H01L21/30 , H01L2223/54453 , H01L2924/0002
摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate having thereon a number of chips are divided into blocks, which each contain a plurality of chips. Marks are provided on each of the blocks, the positions of the marks are detected and the writing exposure positions of the chips within each block are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
摘要翻译：具有电子束曝光装置的曝光方法，其中电子束被发射到诸如其上涂覆有电子束敏感抗蚀剂的硅晶片的基板上，从而直接形成或书写图案。其上具有多个芯片的基板被分成块，每个块包含多个芯片。在每个块上提供标记，检测标记的位置，并且基于检测结果修改每个块内的码片的写入曝光位置。根据本发明，可以高精度地进行有效的写入曝光。

5. 发明授权

US4692579A Electron beam lithography apparatus 失效
标题翻译：电子束光刻设备
公开(公告)号：US4692579A
公开(公告)日：1987-09-08
申请号：US735184
申请日：1985-05-17
申请人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
发明人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30488 , H01J2237/31764
摘要： An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.
摘要翻译：电子束光刻设备包括：点电子束发生器; 使用点光束将期望图案曝光到晶片上的装置; 用于将图案分割成小区域的装置; 以及用于指定小区域的原点的装置，并且还通过使用点光束以固定的校正量对小区域内的部分进行数字扫描，从而减少D / A转换器与数字的相关的建立时间扫描。

6. 发明授权

US5162240A Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate 失效
标题翻译：在厚膜和薄膜混合多层布线基板上制作电路图案的方法和装置
公开(公告)号：US5162240A
公开(公告)日：1992-11-10
申请号：US537492
申请日：1990-06-12
申请人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
发明人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
IPC分类号： H01L21/48 , H01L23/538 , H01L23/544 , H05K1/02 , H05K1/03 , H05K1/09 , H05K3/46
CPC分类号： H05K3/4679 , H01L21/4857 , H01L23/5383 , H01L23/544 , H01L2223/5442 , H01L2223/54473 , H01L2224/16 , H01L2224/16235 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15174 , H05K1/0269 , H05K1/0306 , H05K1/092 , H05K2201/09781 , H05K2201/09918 , H05K3/4605 , H05K3/467
摘要： A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.
摘要翻译：厚薄膜混合多层布线基板包括设置在厚膜电路和薄膜电路之间的调整层，以便调整厚膜电路和薄膜电路的位置，具有高集成度和大面积的厚薄薄膜混合基板。根据厚膜电路基板的形状的分散，使用直接印刷法形成调整层，以吸收基板的分散。此外，为了吸收由于烧结引起的厚膜基板的收缩分散，通过电子束检测设置在基板上的标记的位置，然后形成连接图案以连接到规则图案。

7. 发明授权

US06946665B2 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US06946665B2
公开(公告)日：2005-09-20
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01J3/07 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括用于使多个带电粒子束入射的第一测量部件，并测量带电粒子束的总电流值。第二测量构件使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

8. 发明授权

US5759423A Electron beam writing method and apparatus for carrying out the same 失效
标题翻译：电子束写入方法及其执行装置
公开(公告)号：US5759423A
公开(公告)日：1998-06-02
申请号：US563329
申请日：1995-11-28
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroyuki Itoh , Katsuhiro Kawasaki , Norio Saitou
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroyuki Itoh , Katsuhiro Kawasaki , Norio Saitou
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027 , B44C1/22 , H01L21/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam having a rectangular cross section; a second mask provided with a second rectangular aperture for passing the primary shaped beam to shape the primary shaped beam in a secondary shaped beam having a rectangular cross section, and triangular apertures for passing the primary shaped beam to form a secondary shaped beam having a triangular cross section; a first electron beam deflecting system for moving the primary shaped beam on the surface of the second mask; and a second electron beam deflecting system for moving the secondary shaped beam on the surface of a workpiece on which a pattern is to be written. Each of the triangular apertures is formed in a size such that the triangular aperture can be entirely covered with a rectangular image formed by the first shaped beam on the surface of the second mask.
摘要翻译：电子束写入装置包括：用于投射电子束的电子束源; 第一掩模，设置有第一矩形孔，用于使由电子束源投影的电子束通过，以将电子束形成为具有矩形横截面的主要形状的梁; 第二掩模，其设置有第二矩形孔，用于使主要成形梁通过，以形成具有矩形截面的次级成形梁的主要成形梁，以及三角形孔，用于使初级成形梁通过以形成具有三角形的二次成形梁横截面; 第一电子束偏转系统，用于将第一形状光束移动到第二掩模的表面上; 以及用于在待写入图案的工件的表面上移动二次成形光束的第二电子束偏转系统。每个三角形孔形成为使得三角形孔可以被由第二掩模的表面上的第一成形束形成的矩形图像完全覆盖的尺寸。

9. 发明授权

US08827966B2 Skin patch instrument for treating pain 有权
标题翻译：用于治疗疼痛的皮肤贴片仪
公开(公告)号：US08827966B2
公开(公告)日：2014-09-09
申请号：US12988686
申请日：2008-04-30
申请人： Norio Saitou
发明人： Norio Saitou
IPC分类号： A61M35/00 , A61N1/30 , A61F13/00 , A61F13/02 , A61B17/00
CPC分类号： A61H1/008 , A61B5/0053 , A61B5/4827 , A61F13/023 , A61F13/0273 , A61F2013/00919 , A61F2013/00936
摘要： A therapeutic patch for treating pain capable of compressing a tender area up to a boundary thereof and/or an entire induration with metallic grains or crushed stones by a treatment method in accordance with a classification determined after clarifying a site of pain by pressing a skin with a pressing bar or fingers (first to fourth fingers) to classify the cause of pain, thereby finding the presence of a geographical tender area and/or the presence of an induration on a skin as the cause of pain.
摘要翻译：一种用于治疗疼痛的治疗补片，其能够通过根据通过按压皮肤澄清疼痛部位而确定的分类后的处理方法将金属颗粒或粉碎石块压缩至其边界的嫩嫩区域和/或整体硬结按压杆或手指（第一至第四指）来分类疼痛的原因，从而发现皮肤上存在地理标记区域和/或硬结的存在作为疼痛的原因。

10. 发明授权

US06667486B2 Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same 有权
标题翻译：电子束曝光方法，电子束曝光装置及使用其的装置制造方法
公开(公告)号：US06667486B2
公开(公告)日：2003-12-23
申请号：US10219769
申请日：2002-08-16
申请人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
发明人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
IPC分类号： H01J3708
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/304 , H01J37/3177
摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
摘要翻译：本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使由多个电子束中的每一个形成的图案的图案数据的位置。

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