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1. 发明授权

US4489241A Exposure method with electron beam exposure apparatus 失效
标题翻译：电子束曝光装置曝光方法
公开(公告)号：US4489241A
公开(公告)日：1984-12-18
申请号：US386579
申请日：1982-06-09
申请人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
发明人： Tadahito Matsuda , Tsuneo Okubo , Susumu Ozasa , Norio Saitou , Haruo Yoda
IPC分类号： H01J37/304 , H01L21/027 , H01L21/30 , H01L23/544 , H01J37/317
CPC分类号： H01L23/544 , H01J37/3045 , H01L21/0277 , H01L21/30 , H01L2223/54453 , H01L2924/0002
摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate having thereon a number of chips are divided into blocks, which each contain a plurality of chips. Marks are provided on each of the blocks, the positions of the marks are detected and the writing exposure positions of the chips within each block are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
摘要翻译：具有电子束曝光装置的曝光方法，其中电子束被发射到诸如其上涂覆有电子束敏感抗蚀剂的硅晶片的基板上，从而直接形成或书写图案。其上具有多个芯片的基板被分成块，每个块包含多个芯片。在每个块上提供标记，检测标记的位置，并且基于检测结果修改每个块内的码片的写入曝光位置。根据本发明，可以高精度地进行有效的写入曝光。

2. 发明授权

US4443703A Method and apparatus of deflection calibration for a charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置的偏转校准方法和装置
公开(公告)号：US4443703A
公开(公告)日：1984-04-17
申请号：US347719
申请日：1982-02-10
申请人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
发明人： Nobuo Shimazu , Tsuneo Okubo , Norio Saitou , Susumu Ozasa
IPC分类号： H01J37/147 , H01J37/153 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/147 , H01J37/304
摘要： A method and apparatus of deflection calibration for a charged particle beam exposure apparatus having an electromagnetic deflector and an electrostatic deflector both for deflecting a charged particle beam and a movable stage structure. The electromagnetic deflector is previously subjected to a calibration operation known per se. With a fiducial mark positioned in a predetermined location, the beam is deflected by the calibrated electromagnetic deflector instead of moving the stage structure, the beam is then deflected by the electrostatic deflector to detect the location of the fiducial mark, and deflection data are measured of the electrostatic deflection for the detection of the location of the fiducial mark. According to the present invention the calibration is performed in a short time without causing degradation of the precision of, e.g., lithography due to heat generated by movement of the stage structure.
摘要翻译：一种具有用于偏转带电粒子束和可移动平台结构的电磁偏转器和静电偏转器的带电粒子束曝光装置的偏转校准方法和装置。电磁偏转器预先经过本身已知的校准操作。将基准标记定位在预定位置时，光束被校准的电磁偏转器偏转，而不是移动平台结构，然后光束被静电偏转器偏转以检测基准标记的位置，并且测量偏转数据用于检测静电偏转的位置的基准标记。根据本发明，在短时间内执行校准，而不会导致由于台架结构的移动产生的热量导致的光刻的精度的降低。

3. 发明授权

US4577111A Apparatus for electron beam lithography 失效
标题翻译：电子束光刻设备
公开(公告)号：US4577111A
公开(公告)日：1986-03-18
申请号：US516091
申请日：1983-07-22
申请人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
发明人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
IPC分类号： G03F7/20 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/30 , H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3174 , H01L21/30 , H01J2237/1505 , H01J2237/152 , H01J2237/30472 , H01J2237/31776
摘要： An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.
摘要翻译：用于电子束光刻的装置包括至少一个掩模，其配备有要经受来自电子束发生器的电子束的多边形孔，用于对掩模的多边形孔径进行缩小和成像的电子透镜系统和用于电子的螺线管线圈光束旋转调节放置在掩模和终末电子透镜之间。

4. 发明授权

US4692579A Electron beam lithography apparatus 失效
标题翻译：电子束光刻设备
公开(公告)号：US4692579A
公开(公告)日：1987-09-08
申请号：US735184
申请日：1985-05-17
申请人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
发明人： Norio Saitou , Susumu Ozasa , Masahide Okumura , Mitsuo Ooyama , Tsutomu Komoda , Katsuhiro Harada , Minpei Fujinami , Kazumi Iwadate
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30488 , H01J2237/31764
摘要： An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.
摘要翻译：电子束光刻设备包括：点电子束发生器; 使用点光束将期望图案曝光到晶片上的装置; 用于将图案分割成小区域的装置; 以及用于指定小区域的原点的装置，并且还通过使用点光束以固定的校正量对小区域内的部分进行数字扫描，从而减少D / A转换器与数字的相关的建立时间扫描。

5. 发明授权

US4396901A Method for correcting deflection distortion in an apparatus for charged particle lithography 失效
标题翻译：用于校正带电粒子光刻装置中的偏转变形的方法
公开(公告)号：US4396901A
公开(公告)日：1983-08-02
申请号：US227940
申请日：1981-01-23
申请人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
发明人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
IPC分类号： H01L21/027 , H01J37/304 , H01J29/70 , G06K7/10
CPC分类号： H01J37/304
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.
摘要翻译：在用于校正通过扫描样品上的图案的装置中产生的偏转失真的方法中，通过扫描带电粒子束而产生的偏转变形的校正根据待部分的高度（变形）基于在通过扫描带电粒子束在具有至少两个具有不等高度的参考水平的标记上获得的标记的各个参考水平处的偏转失真的校正幅度的样本（例如，晶片）上线性化沿光轴的方向。

6. 发明授权

US06946665B2 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US06946665B2
公开(公告)日：2005-09-20
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01J3/07 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括用于使多个带电粒子束入射的第一测量部件，并测量带电粒子束的总电流值。第二测量构件使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

7. 发明授权

US06667486B2 Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same 有权
标题翻译：电子束曝光方法，电子束曝光装置及使用其的装置制造方法
公开(公告)号：US06667486B2
公开(公告)日：2003-12-23
申请号：US10219769
申请日：2002-08-16
申请人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
发明人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
IPC分类号： H01J3708
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/304 , H01J37/3177
摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
摘要翻译：本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使由多个电子束中的每一个形成的图案的图案数据的位置。

8. 发明授权

US5757409A Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
公开(公告)号：US5757409A
公开(公告)日：1998-05-26
申请号：US644089
申请日：1996-05-10
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

9. 发明授权

US5557314A Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
标题翻译：曝光方法和图案数据准备系统，图案数据准备方法和掩模以及曝光装置
公开(公告)号：US5557314A
公开(公告)日：1996-09-17
申请号：US77411
申请日：1993-06-16
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.
摘要翻译：通过重复图案和非重复图案的期望图案，可以实现高可靠性的选择性图案曝光。获得曝光技术以提高图案数据的准备效率并确保孔径图案的检查。通过本发明，电子束被用作聚焦光束，并且用于传送半导体集成电路等的多个图形的重复图案和非重复图案的批传送系统的图案曝光装置包括用于控制的EB绘图部分光束和照射光束到样品上，控制I / O部分，绘图控制部分和数据存储部分。在EB绘图部分中，半导体晶片安装在平台上，并且在从电子束源到舞台的电子束的路径中，安装第一掩模，消隐电极，电子透镜，第一偏转器，第二透镜偏转器，第二掩模和第三偏转器。

10. 发明申请

US20050029473A1 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US20050029473A1
公开(公告)日：2005-02-10
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , G01K1/08 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams comprises a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams, and a second measurement member for making the plurality of charged particle beams come incident and multiplying electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括使多个带电粒子束入射的第一测量部件和测量带电粒子束的总电流值，以及第二测量部件，使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

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