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1. 发明申请

US20050029473A1 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US20050029473A1
公开(公告)日：2005-02-10
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , G01K1/08 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams comprises a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams, and a second measurement member for making the plurality of charged particle beams come incident and multiplying electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括使多个带电粒子束入射的第一测量部件和测量带电粒子束的总电流值，以及第二测量部件，使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

2. 发明授权

US06946665B2 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US06946665B2
公开(公告)日：2005-09-20
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01J3/07 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括用于使多个带电粒子束入射的第一测量部件，并测量带电粒子束的总电流值。第二测量构件使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

3. 发明授权

US06768118B2 Electron beam monitoring sensor and electron beam monitoring method 有权
标题翻译：电子束监测传感器和电子束监测方法
公开(公告)号：US06768118B2
公开(公告)日：2004-07-27
申请号：US10350188
申请日：2003-01-24
申请人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
发明人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
IPC分类号： H01J326
CPC分类号： H01J37/244 , H01J2237/24405 , H01J2237/31774
摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.
摘要翻译：本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

4. 发明授权

US6159644A Method of fabricating semiconductor circuit devices utilizing multiple exposures 失效
公开(公告)号：US6159644A
公开(公告)日：2000-12-12
申请号：US142077
申请日：1998-09-01
申请人： Hidetoshi Satoh , Yoshinori Nakayama , Masahide Okumura , Hiroya Ohta , Norio Saitou
发明人： Hidetoshi Satoh , Yoshinori Nakayama , Masahide Okumura , Hiroya Ohta , Norio Saitou
IPC分类号： G03F7/20 , H01J37/304 , G03F9/00
CPC分类号： G03F7/70616 , G03F7/70433 , G03F7/70458 , G03F7/70633 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.

5. 发明授权

US06511048B1 Electron beam lithography apparatus and pattern forming method 失效
标题翻译：电子束光刻设备和图案形成方法
公开(公告)号：US06511048B1
公开(公告)日：2003-01-28
申请号：US09191383
申请日：1998-11-13
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.
摘要翻译：一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。这允许在每个孔径组中精确地写入外围定位的图形。

6. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

7. 发明申请

US20050072941A1 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US20050072941A1
公开(公告)日：2005-04-07
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

8. 发明授权

US08268209B2 Pattern forming method and its mold 失效
标题翻译：图案成型方法及其模具
公开(公告)号：US08268209B2
公开(公告)日：2012-09-18
申请号：US11623776
申请日：2007-01-17
申请人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
发明人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
IPC分类号： H01L23/544
CPC分类号： H01L21/76838 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7076 , G11B5/855 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.
摘要翻译：在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

9. 发明授权

US07425714B2 Measurement method of electron beam current, electron beam writing system and electron beam detector 有权
标题翻译：电子束电流，电子束写入系统和电子束检测器的测量方法
公开(公告)号：US07425714B2
公开(公告)日：2008-09-16
申请号：US11207710
申请日：2005-08-22
申请人： Makoto Sakakibara , Yoshinori Nakayama , Hiroya Ohta , Yasunari Sohda , Noriyuki Tanaka , Yasuhiro Someda
发明人： Makoto Sakakibara , Yoshinori Nakayama , Hiroya Ohta , Yasunari Sohda , Noriyuki Tanaka , Yasuhiro Someda
IPC分类号： G21K5/10
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G01R19/0061 , H01J37/243 , H01J2237/30472
摘要： A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.
摘要翻译：提供了一种能够在精确测量电子束写入系统中的弱光束电流的同时减少重叠在长传输线上的噪声影响的技术，并且能够精确高效地测量使用多个光束的光束写入系统中的弱光束电流。通过使用用于连接和断开电子束检测装置的开关和检测到的信号线，电子束检测装置与检测到的信号线断开，以在束电流测量期间将检测到的信号累积在电子束检测装置中。在测量结束的同时，连接电子束检测装置和检测信号线来测量累积信号。此外，为了同时进行测量方法，使用多个电子束检测装置和开关以高精度同时测量多个电子束。

10. 发明授权

US07423274B2 Electron beam writing system and electron beam writing method 失效
标题翻译：电子束写入系统和电子束写入方法
公开(公告)号：US07423274B2
公开(公告)日：2008-09-09
申请号：US11355952
申请日：2006-02-17
申请人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
发明人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
IPC分类号： A61N5/00
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/3045
摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.
摘要翻译：提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便基于检测结果校正电子束的位置或偏转量。

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