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    • 2. 发明授权
    • Cooling arrangement for semiconductor devices and method of making the
same
    • 用于半导体器件的冷却装置及其制造方法
    • US5133403A
    • 1992-07-28
    • US423386
    • 1989-10-19
    • Hitoshi YokonoTakao TerabayashiNobuo KayabaTakahiro DaikokuShigekazu KiedaFumiyuki KobayashiShizuo Zushi
    • Hitoshi YokonoTakao TerabayashiNobuo KayabaTakahiro DaikokuShigekazu KiedaFumiyuki KobayashiShizuo Zushi
    • H01L23/373H01L23/433H01L23/473H05K7/20
    • H01L23/4338H01L23/3733F28F2255/18H01L2224/16225
    • A cooling device for cooling semiconductor elements by removing heat generated from the semiconductor elements such as, for example, semiconductor integrated chips in a large-sized electronic computer. The cooling device is fashioned of a composite AlN-BN sintered material having a Vickers hardness not higher than one-fifth of that of an AlN material, and an anisotropic property of thermal conductivity in a two dimensional direction is higher than that of AlN which is isotropic in thermal conductivity. The cooling device may be mass-produced while nevertheless having a high transfer performance matching the quantity of heat generated for each semiconductor element even if the composite sintered material is uniform in shape and size. The composite sintered material is formed by a mixture of a hexagonal BN powder having an average particle diameter of not less than 1 .mu.m and an AlN powder having an average particle diameter of about 2 .mu.m, with a sintering aid being added and the powdery mixture being subjected to a hot press sintering whereby the sintered material is low in thermal conductivity in a direction parallel to an axis of a shaft of the hot press.
    • 一种用于通过从大型电子计算机中的诸如半导体集成芯片的半导体元件产生的热量来冷却半导体元件的冷却装置。 该冷却装置由维氏硬度不高于AlN材料的五分之一的复合AlN-BN烧结材料制成,并且二维方向的热导率的各向异性特性比AlN的各向异性高 各向同性的导热性。 即使复合烧结体的形状和尺寸一致,冷却装置也可以批量生产,同时具有与每个半导体元件产生的热量匹配的高转印性能。 复合烧结材料由平均粒径不小于1μm的六方晶BN粉末和平均粒径约2μm的AlN粉末的混合物形成,并加入烧结助剂。 混合物进行热压烧结,由此烧结材料在与热压机的轴的轴线平行的方向上的导热性低。
    • 4. 发明授权
    • Photosensitive resin composition and method for forming fine patterns
with said composition
    • 光敏树脂组合物和用所述组合物形成精细图案的方法
    • US4554237A
    • 1985-11-19
    • US452198
    • 1982-12-22
    • Fumio KataokaFusaji ShojiHitoshi YokonoDaisuke MakinoShigeru KoibuchiAsao Isobe
    • Fumio KataokaFusaji ShojiHitoshi YokonoDaisuke MakinoShigeru KoibuchiAsao Isobe
    • G03C1/72G03F7/008G03C1/52G03C1/60G03C5/16
    • G03F7/008Y10S430/128
    • Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition.Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.3 is hydrogen, a lower alkyl group or --CH.sub.2 CH.sub.2 O).sub.n R.sup.9 wherein n is an integer of 3 or less and R.sup.9 is hydrogen or a lower alkyl group)].
    • 公开了用于在半导体器件上形成精细图案的光敏树脂组合物,具有高度敏感性和显影性优异的并且没有问题,例如显影后的叠氮化合物和剩余的叠氮化物颗粒的沉淀,以及方法 用于用所述组合物形成精细图案。 所述光敏树脂组合物包含(a)至少一种选自酚醛清漆树脂和聚羟基苯乙烯树脂的聚合物化合物和(b)由通式(1)表示的叠氮化合物:其中 X是-N3或-SO2N3,Y是低级亚烷基,例如-CH2CH2-,-CH2CH2CH2-或-CH2CH2OCH2CH2CH2-,羟基亚烷基或氨基亚烷基,例如
    • 10. 发明授权
    • Thermosetting resin compositions prepared from isocyanates and
epoxyphenols
    • 由异氰酸酯和环氧苯酚制备的热固性树脂组合物
    • US3984376A
    • 1976-10-05
    • US483044
    • 1974-06-25
    • Hitoshi YokonoShunichi NumataKazuo GotoMasahiko SakaiToshikazu NaraharaJunji Mukai
    • Hitoshi YokonoShunichi NumataKazuo GotoMasahiko SakaiToshikazu NaraharaJunji Mukai
    • C08G18/18C08G18/28C08G18/58C08G18/06
    • C08G18/2815C08G18/18C08G18/2845C08G18/58
    • Thermosetting resin compositions are obtained by mixing a resinous addition product produced by reacting an isocyanate compound having a molecular weight of 100 to 2000 and containing at least two isocyanate groups in its molecule with an epoxyphenol compound represented by the formula, ##EQU1## wherein R is a bi- or more valent group containing phenyl, R.sub.1 is hydrogen, methyl or ethyl, m and n each are an integer of 1-8, and optionally an ordinary thermosetting epoxy resin, and 0.01 to 10 % by weight of a basic heterocycle forming catalyst based on the weight of said resinous addition product, said isocyanate compound and said epoxyphenol compound being blended so that said OH group may be present in an amount of 1/3 to 1 equivalent per equivalent of said isocyanate group and said epoxy group may be present in an amount of one-fifth to two-thirds equivalent per equivalent of said isocyanate group. The said addition product can be converted into a stable B-stage and is particularly useful as a varnish for prepreg.
    • 通过将分子量为100〜2000的异氰酸酯化合物与分子中至少含有2个异氰酸酯基的异氰酸酯化合物与由式O ANGLE(HO)nR表示的环氧苯酚化合物反应而得到的树脂添加物混合,得到热固性树脂组合物, - (CH 2 -C-CH 2)m | R 1其中R是含有苯基的二价或更多价基团,R 1是氢,甲基或乙基,m和n各自是1-8的整数,并且任选地是普通的热固性 环氧树脂和基于所述树脂加成产物的重量的0.01至10重量%的碱性杂环形成催化剂,所述异氰酸酯化合物和所述环氧苯酚化合物混合,使得所述OH基团可以以1/3的量存在 至每当量所述异氰酸酯基团为1当量,并且所述环氧基团可以以每当量所述异氰酸酯基团的五分之一至三分之二当量的量存在。 所述加成产物可以转化成稳定的B阶段,并且特别可用作预浸料的清漆。