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1. 发明授权

US06239553B1 RF plasma source for material processing 有权
标题翻译： RF等离子体源进行材料加工
公开(公告)号：US06239553B1
公开(公告)日：2001-05-29
申请号：US09296934
申请日：1999-04-22
申请人： Mike Barnes , Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka
发明人： Mike Barnes , Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka
IPC分类号： H01J724
CPC分类号： H01J37/321 , H05H1/46
摘要： The present invention provides a plasma source that maintains a low coil voltage in the vicinity of the plasma tube, thereby reducing the capacitive coupling between the coil and the plasma and significantly reducing the erosion from the internal surfaces of the plasma tube. The plasma source generally comprises a coil having a first coil segment and a second coil segment, an RF power source connected to the coil and an enclosure disposed between the first coil segment and the second coil segment. The invention also provides a method for generating a plasma, comprising: disposing an enclosure between a first coil segment and a second coil segment; introducing a gas into the enclosure; and supplying an RF power to the coil segments to excite the gas into a plasma state. The invention provides a variety of coil operations, including symmetrical coil configuration, asymmetrical coil configuration with the matching networks adjusted to provide a low voltage near the plasma chamber, self-resonant configuration, grounded coil center configuration having coil segments driven in parallel and physically grounded near the plasma chamber, and pairs configurations having a plurality of coil segment pairs driven in series or parallel.
摘要翻译：本发明提供了一种在等离子体管附近保持低线圈电压的等离子体源，从而减小了线圈与等离子体之间的电容耦合，并显着减少了等离子体管内表面的侵蚀。等离子体源通常包括具有第一线圈段和第二线圈段的线圈，连接到线圈的RF电源和设置在第一线圈段和第二线圈段之间的外壳。本发明还提供了一种用于产生等离子体的方法，包括：在第一线圈段和第二线圈段之间设置外壳; 将气体引入外壳; 并且向线圈段提供RF功率以将气体激发成等离子体状态。本发明提供了各种线圈操作，包括对称线圈配置，不对称线圈配置，匹配网络被调整以在等离子体室附近提供低电压，自谐振配置，具有线圈段并联驱动并接地的线圈中心配置并且具有串联或并联驱动的多个线圈段对的配置配置。

2. 发明授权

US06447651B1 High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers 有权
标题翻译：高磁导率磁屏蔽，用于改善非磁化等离子体处理室中的工艺均匀性
公开(公告)号：US06447651B1
公开(公告)日：2002-09-10
申请号：US09800798
申请日：2001-03-07
申请人： Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka , Canfeng Lai , Robert Duncan
发明人： Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka , Canfeng Lai , Robert Duncan
IPC分类号： C23C1435
CPC分类号： C23C16/45508 , C23C16/507 , C23C16/52
摘要： A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.
摘要翻译：提供了一种用于在等离子体沉积工艺期间在处理室中在衬底上形成层的方法和装置。在处理室中形成等离子体，具有适于沉积层的前体气体的工艺气体流入处理室，并且具有小于约0.5高斯的强度的磁场在处理室内衰减。这种磁场的衰减导致在沉积期间实现的工艺均匀度的改善。

3. 发明授权

US06189483B1 Process kit 失效
标题翻译：工艺套件
公开(公告)号：US06189483B1
公开(公告)日：2001-02-20
申请号：US08865567
申请日：1997-05-29
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Kaveh Niazi , Hiroji Hanawa
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Kaveh Niazi , Hiroji Hanawa
IPC分类号： H01L2100
CPC分类号： C23C16/45521 , C23C16/4405 , C23C16/4585 , C23C16/4586 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32862 , H01L21/6831 , Y10S156/915
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

4. 发明授权

US6083344A Multi-zone RF inductively coupled source configuration 失效
标题翻译：多区域射频感应耦合源配置
公开(公告)号：US6083344A
公开(公告)日：2000-07-04
申请号：US865432
申请日：1997-05-29
申请人： Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
发明人： Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/321
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

5. 发明授权

US09272642B2 Vehicle seat 有权
标题翻译：车座
公开(公告)号：US09272642B2
公开(公告)日：2016-03-01
申请号：US14477272
申请日：2014-09-04
申请人： Hideki Kobayashi , Tetsuya Ishikawa , Kazuhisa Nishimura
发明人： Hideki Kobayashi , Tetsuya Ishikawa , Kazuhisa Nishimura
IPC分类号： B60N2/30 , B60N2/36 , B60N2/48
CPC分类号： B60N2/3065 , B60N2/3013 , B60N2/3088 , B60N2/36 , B60N2/859 , B60N2/874 , B60N2205/40
摘要： In a vehicle seat (car seat 1) including a first seat portion (seat cushion 10) movable between a use position and a retracted position, and a second seat portion (seat back 20) movable between a use position and a retracted position, an actuator mechanism is configured to cause the second seat portion to start moving toward its retracted position at a time when the first seat portion passes a predetermined intermediate position that is on a way from the use position toward the retracted position. In one embodiment, the actuator mechanism includes a biasing member (torsion spring 13, 23) configured to bias each of the seat cushion 10 and the seat back 20 from the use position toward the retracted position, a lock member (lock arm 42) configured to lock the seat back 20 in the use position, and an unlock device (cable 44, 42A) configured to release the lock member to cause the seat back 20 to start moving toward the retracted position, at a time when the seat cushion 10 passes the predetermined intermediate position that is on the way from a posture in which the seat cushion is ready for use toward a posture in which the seat cushion 10 is tipped up.
摘要翻译：在包括在使用位置和缩回位置之间可移动的第一座椅部分（座垫10）和可在使用位置和缩回位置之间移动的第二座椅部分（座椅靠背20）的车辆座椅（汽车座椅1）中，致动器机构构造成使得第二座椅部分在第一座椅部分经过从使用位置朝向缩回位置的途中经过的预定中间位置时开始向其缩回位置移动。在一个实施例中，致动器机构包括构造成将座垫10和座椅靠背20中的每一个从使用位置朝向缩回位置偏置的偏置构件（扭转弹簧13,23），配置在锁定构件将座椅靠背20锁定在使用位置，以及解锁装置（电缆44,42A），其构造成在座垫10通过时释放锁定构件以使座椅靠背20开始向缩回位置移动在从座垫准备好使用的姿势朝向座垫10倾斜的姿势的途中的预定中间位置。

6. 发明授权

US08651638B2 Inkjet printing apparatus 有权
标题翻译：喷墨打印设备
公开(公告)号：US08651638B2
公开(公告)日：2014-02-18
申请号：US13218626
申请日：2011-08-26
申请人： Tetsuya Ishikawa
发明人： Tetsuya Ishikawa
IPC分类号： B41J2/175
CPC分类号： B41J2/17509 , B41J2/175 , B41J2/17513 , B41J2/1752 , B41J2/17523 , B41J2/17553 , B41J2/17596
摘要： An inkjet printing apparatus comprises an ink tank including an ink accommodating unit, an ink leading-out mechanism for leading out the ink in the ink accommodating unit to an outside, and a housing, and an ink tank holder for removably retaining the ink tank, wherein a space is formed between the ink leading-out mechanism and the housing, and when the ink tank is mounted to the ink tank holder, an ink flow passage is formed by contact of an outer periphery of an ink leading-out needle in the ink tank holder with a sealing member in the ink leading-out mechanism, further comprising restriction means for restricting a position of the ink tank to the ink tank holder such that when removing the ink tank from the ink tank holder, the ink tank stops in a state where a tip end of the ink leading-out needle is in the space.
摘要翻译：一种喷墨打印设备包括一个墨盒，包括墨水容纳单元，用于将墨水容纳单元中的墨水引导到外部的墨水引出机构和外壳以及用于可拆卸地保持墨水盒的墨水盒保持器，其中在所述墨水引出机构和所述壳体之间形成空间，并且当所述墨水罐安装到所述墨水盒保持器时，墨水流动通道通过所述墨水引出针的外周部在墨水引出机构中具有密封构件的墨水盒保持器还包括限制装置，用于将墨水罐的位置限制到墨水盒保持器，使得当从墨水盒保持器移除墨水盒时，墨水罐停止墨水引出针的前端位于空间中的状态。

7. 发明申请

US20130320353A1 METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化钙相层析（HVPE）在形成图案的基底上形成III族氮化物膜的方法
公开(公告)号：US20130320353A1
公开(公告)日：2013-12-05
申请号：US13959469
申请日：2013-08-05
申请人： Olga Kryiouk , Yuriy Mehnik , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Olga Kryiouk , Yuriy Mehnik , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：沉积高品质低缺陷单晶III-III族氮化物膜的方法。提供具有多个特征的图案化衬底，其具有由空间分开的倾斜侧壁。通过在图案化衬底上的氢化物气相外延（HVPE）工艺沉积III-III族氮化物膜。 HVPE沉积工艺在特征之间的空间中形成具有第一晶体取向的III族氮化物膜，并且在倾斜侧壁上形成第二不同的晶体取向。空间中的第一晶体取向随后在侧壁上过度生长第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的重力位错。

8. 发明授权

US08568529B2 HVPE chamber hardware 有权
标题翻译： HVPE室硬件
公开(公告)号：US08568529B2
公开(公告)日：2013-10-29
申请号：US12637019
申请日：2009-12-14
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： C30B21/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

9. 发明申请

US20130229678A1 OPERATION PANEL AND INFORMATION PROCESSING DEVICE 审中-公开
标题翻译：操作面板和信息处理设备
公开(公告)号：US20130229678A1
公开(公告)日：2013-09-05
申请号：US13781640
申请日：2013-02-28
申请人： Tetsuya Ishikawa , Masaki Kakutani
发明人： Tetsuya Ishikawa , Masaki Kakutani
IPC分类号： G06K15/00
CPC分类号： G06K15/002 , G06K15/4095
摘要： Disclosed is an operation panel including: an operating unit to receive an operation from a user; a detecting unit to detect whether the operation panel is attached to a predetermined device; a communication unit to be wirelessly communicable with the predetermined device; and a control unit to switch a function of the predetermined device, which can be operated from the operating unit, so that the operation relating to a first function of the predetermined device can be carried out from the operating unit and the operation relating to a second function of the predetermined device cannot be carried out from the operating unit when the operation panel is not attached to the predetermined device, and so that at least the operation relating to the second function can be carried out from the operating unit when the operation panel is attached to the predetermined device.
摘要翻译：公开了一种操作面板，包括：操作单元，用于从用户接收操作; 检测单元，用于检测操作面板是否附接到预定的设备; 通信单元，其与所述预定设备无线通信; 以及控制单元，用于切换可以从操作单元操作的预定设备的功能，使得可以从操作单元执行与预定设备的第一功能有关的操作，并且涉及第二当操作面板未安装到预定的装置时，不能从操作单元执行预定装置的功能，并且当操作面板为操作面板时，至少可以从操作单元执行与第二功能有关的操作连接到预定的装置。

10. 发明授权

US08491720B2 HVPE precursor source hardware 有权
标题翻译： HVPE前驱源硬件
公开(公告)号：US08491720B2
公开(公告)日：2013-07-23
申请号：US12637028
申请日：2009-12-14
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C22/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

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