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1. 发明授权

US06189483B1 Process kit 失效
标题翻译：工艺套件
公开(公告)号：US06189483B1
公开(公告)日：2001-02-20
申请号：US08865567
申请日：1997-05-29
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Kaveh Niazi , Hiroji Hanawa
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Kaveh Niazi , Hiroji Hanawa
IPC分类号： H01L2100
CPC分类号： C23C16/45521 , C23C16/4405 , C23C16/4585 , C23C16/4586 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32862 , H01L21/6831 , Y10S156/915
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

2. 发明授权

US6143078A Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US6143078A
公开(公告)日：2000-11-07
申请号：US191364
申请日：1998-11-13
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00 , H05H1/00
CPC分类号： H01L21/67017
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a film on a substrate comprising: providing a chemical vapor deposition chamber, introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface and generating a plasma of the processing gases. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑构件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种在衬底上沉积膜的方法，包括：提供化学气相沉积室，将第一气体通过第一距离腔室内表面的第一距离处的第一气体入口引入第二气体，气体入口距离室的内表面第二距离，其中第二气体在室的内表面附近产生较高的分压，以防止从内表面上的第一气体沉积并产生处理气体的等离子体。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

3. 发明授权

US06486081B1 Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US06486081B1
公开(公告)日：2002-11-26
申请号：US09449203
申请日：1999-11-24
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： H01L2131
CPC分类号： C23C16/45514 , C23C16/401 , C23C16/4411 , C23C16/455 , C23C16/45563 , C23C16/45578 , C23C16/507 , H01J37/3244 , H01L21/67069
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a FSG film on a substrate comprising: introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, and introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种用于在衬底上沉积FSG膜的方法，包括：将第一气体通过第一距离腔室的内表面的第一气体入口引入，并将第二气体通过第二气体入口引入第二气体距离室的内表面的距离，其中第二气体在室的内表面附近产生较高的分压，以防止内表面上的第一气体沉积。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

4. 发明授权

US07691753B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
公开(公告)号：US07691753B2
公开(公告)日：2010-04-06
申请号：US11422150
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

5. 发明申请

US20060228886A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
标题翻译：用于电介质膜的沉积选择性蚀刻沉积工艺
公开(公告)号：US20060228886A1
公开(公告)日：2006-10-12
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

6. 发明授权

US07081414B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07081414B2
公开(公告)日：2006-07-25
申请号：US10445240
申请日：2003-05-23
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N Pham , Farhad K Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N Pham , Farhad K Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

7. 发明申请

US20060113038A1 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US20060113038A1
公开(公告)日：2006-06-01
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

8. 发明授权

US06869880B2 In situ application of etch back for improved deposition into high-aspect-ratio features 失效
标题翻译：回蚀刻的原位应用可以改善沉积到高纵横比特征
公开(公告)号：US06869880B2
公开(公告)日：2005-03-22
申请号：US10057014
申请日：2002-01-24
申请人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
发明人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509 , C30B25/10 , H01L21/311 , H01L21/316 , H01L21/768 , H01L21/20
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837
摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
摘要翻译：提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

9. 发明授权

US07399707B2 In situ application of etch back for improved deposition into high-aspect-ratio features 失效
标题翻译：回蚀刻的原位应用可以改善沉积到高纵横比特征
公开(公告)号：US07399707B2
公开(公告)日：2008-07-15
申请号：US11036632
申请日：2005-01-13
申请人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
发明人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
IPC分类号： H01L21/302
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837
摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
摘要翻译：提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

10. 发明授权

US07097886B2 Deposition process for high aspect ratio trenches 有权
标题翻译：高宽比沟槽沉积工艺
公开(公告)号：US07097886B2
公开(公告)日：2006-08-29
申请号：US10319827
申请日：2002-12-13
申请人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham , Zhenjiang Cui
发明人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham , Zhenjiang Cui
IPC分类号： H05H1/24
CPC分类号： H01J37/32082 , C23C16/045 , H01J2237/3327 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/31612 , H01L21/76229
摘要： A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.
摘要翻译：一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分处理。在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

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