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1. 发明授权

US06827824B1 Enhanced collimated deposition 失效
标题翻译：增强准直沉积
公开(公告)号：US06827824B1
公开(公告)日：2004-12-07
申请号：US08631465
申请日：1996-04-12
申请人： Guy Blalock , Gurtej S. Sandhu
发明人： Guy Blalock , Gurtej S. Sandhu
IPC分类号： C23C1435
CPC分类号： C23C14/345 , C23C14/351 , C23C14/354 , H01J37/32339 , H01J2237/3327
摘要： An apparatus for film deposition onto a substrate from a source of target particles including a plasma generator creating a plasma that isotropically accelerates the target particles towards the substrate. A secondary ionizer creates a secondary ionization zone between the plasma and the substrate support. The isotropically accelerated target particles are ionized as they pass through the secondary ionization zone. A static field generator creates a static field between the secondary ionization zone and the substrate accelerating the ionized target particles along a substantially collimated trajectory perpendicular to the substrate. Optionally, a collimator is included between the secondary ionization zone and the substrate and biased to focus and accelerate the collimated target particles.
摘要翻译：一种用于从包括等离子体发生器的目标粒子源在基底上沉积膜的装置，其产生等离子体，所述等离子体将目标颗粒各向同性地加速到衬底。二次电离器在等离子体和衬底支撑件之间产生二次电离区。各向同性加速的目标颗粒在通过二次电离区时被电离。静电场发生器在二次电离区和基板之间产生静电场，该静电场沿垂直于衬底的基本上准直的轨迹加速电离的靶颗粒。可选地，准直仪包括在二次电离区和衬底之间，并被偏置以聚焦并加速准直的靶颗粒。

2. 发明授权

US06790323B2 Self ionized sputtering using a high density plasma source 有权
标题翻译：使用高密度等离子体源进行自电离溅射
公开(公告)号：US06790323B2
公开(公告)日：2004-09-14
申请号：US09918136
申请日：2001-07-30
申请人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Foster
发明人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Foster
IPC分类号： C23C1435
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering having reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
摘要翻译：磁控管对于低压等离子体溅射或持续自溅射特别有利，其面积减小但目标覆盖范围完全。磁控管包括围绕内极面的外极面，其间具有间隙。本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。由此，可以实现低压高离子化分级的溅射。

3. 发明授权

US06783638B2 Flat magnetron 失效
标题翻译：扁平磁控管
公开(公告)号：US06783638B2
公开(公告)日：2004-08-31
申请号：US09949181
申请日：2001-09-07
申请人： Peter J. Clarke
发明人： Peter J. Clarke
IPC分类号： C23C1435
CPC分类号： H01J37/3452 , C23C14/35 , H01J37/3408
摘要： An electric field is provided in a first direction between an anode and a target having a flat disposition. A magnetic field is provided such that the magnetic flux lines are in a second direction substantially perpendicular to the first direction. The magnet structure may be formed from permanent magnets extending radially in a horizontal direction, like the spokes of a wheel, and from magnetizable pole pieces extending vertically from the opposite ends of the spokes. The permanent magnets and the pole pieces define a well. The target is disposed in the well so that its flat disposition is in the same direction as the magnetic flux lines. Molecules of an inert gas flow through the well. Electrons in the well move in a third direction substantially perpendicular to the first and second directions. The electrons ionize molecules of the inert gas. The ions are attracted to the target and sputter atoms from the surface of the target. The sputtered atoms become deposited on a substrate. Reflectors in the well near the radially outer walls of the magnet structures, and also in one embodiment near the radially inner walls of the magnet structures, prevent the electrons from striking the permanent magnets. The reflectors and the anode are cooled by a fluid (e.g. water). The resultant magnetron sputters as much as 65% of the material from the target on the substrate in contrast to a sputtering of approximately 35% of material from the targets on substrates in the prior art.
摘要翻译：在阳极和具有平坦配置的靶之间的第一方向上设置电场。提供磁场使得磁通线处于基本上垂直于第一方向的第二方向。磁体结构可以由沿水平方向径向延伸的永磁体形成，如轮的轮辐，以及从轮辐的相对端垂直延伸的可磁化极片形成。永磁体和极片定义了一个井。目标设置在井中，使得其平坦布置与磁通线方向相同。惰性气体的分子流过井。井中的电子在基本上垂直于第一和第二方向的第三方向上移动。电子电离了惰性气体的分子。离子被吸引到靶上并从靶表面溅射原子。溅射的原子沉积在基底上。在磁体结构的径向外壁附近的阱中的反射器以及靠近磁体结构的径向内壁的一个实施例中的反射器防止电子撞击永磁体。反射器和阳极由流体（例如水）冷却。与现有技术中的基板上的目标物的大约35％的材料的溅射相比，所得到的磁控管从基板上的目标物质喷射高达65％的材料。

4. 发明授权

US06692618B2 Magnetron sputter source with multipart target 失效
标题翻译：具有多目标靶的磁控溅射源
公开(公告)号：US06692618B2
公开(公告)日：2004-02-17
申请号：US10134915
申请日：2002-04-29
申请人： Martin Dubs
发明人： Martin Dubs
IPC分类号： C23C1435
CPC分类号： C23C14/35 , C23C14/548
摘要： A device and method has a magnetron sputter source with a multipart target (3, 4) and movable magnet system (5). By variation of the power delivery of the power supply (6), specific areas of the multipart target (3, 4) can be preferably affected, which permits setting the stoichiometry of the sputtered-off target materials on the substrate (15) to be covered and positively affecting the homogeneity of the layer structure.
摘要翻译：装置和方法具有具有多部分目标（3,4）和可移动磁体系统（5）的磁控溅射源。通过电源（6）的功率输送的变化，可以优选地影响多部分目标（3,4）的特定区域，这允许将基板（15）上的溅射靶材料的化学计量设定为覆盖并积极影响层结构的均匀性。

5. 发明授权

US06635154B2 Method and apparatus for multi-target sputtering 有权
标题翻译：多目标溅射的方法和装置
公开(公告)号：US06635154B2
公开(公告)日：2003-10-21
申请号：US10006899
申请日：2001-11-03
申请人： Paul Markoff Johnson , Norman H. Pond , Robert Ruck , Nathan Fo
发明人： Paul Markoff Johnson , Norman H. Pond , Robert Ruck , Nathan Fo
IPC分类号： C23C1435
CPC分类号： C23C14/3407 , C23C14/3464 , G11B5/851 , Y10T428/12
摘要： Sequential sputtered film deposition of distinct materials on a workpiece is obtained with discrete targets composed of such distinct materials disposed on separate area portions of a common cathode/heatsink. Sputtering without cross contamination of the deposited films is enabled during an interval of relative motion between the target and workpiece or in an indexed static relative disposition, wherein the workpiece projection is entirely proximate one such portion to deposit the respective layer.
摘要翻译：使用由设置在公共阴极/散热器的分离区域部分上的这种不同材料组成的离散靶来获得在工件上的不同材料的顺序溅射膜沉积。在目标和工件之间的相对运动的间隔内或在分度的静态相对布置中，能够在没有沉积膜的交叉污染的情况下进行溅射，其中工件突起完全靠近一个这样的部分以沉积相应的层。

6. 发明授权

US06620300B2 Coating for optical fibers and method therefor 失效
公开(公告)号：US06620300B2
公开(公告)日：2003-09-16
申请号：US09973513
申请日：2001-10-09
申请人： Bawa Singh , Nalin Kumar , Vipulkumar Patel , Krishna Linga , Ali Ouali
发明人： Bawa Singh , Nalin Kumar , Vipulkumar Patel , Krishna Linga , Ali Ouali
IPC分类号： C23C1435
CPC分类号： G02B6/2558 , C03C25/226 , C23C14/3407 , C23C14/352 , C23C14/562 , G02B6/02395 , G02B6/25 , Y10T428/2964
摘要： An improved coating for optical fibers and a method for applying the improved coating are described. The present invention is a dimensionally precise and uniform coating with low-porosity. The improved coating is applied via sputtering within a vacuum chamber. Environmental conditions are monitored within a cylindrical magnetron during sputtering. Sputtering is adjusted or temporarily ceased when environmental conditions approach a damage threshold. Sputtered particles within a plasma cloud are dimensionally similar and adhere to an optical fiber in a volume efficient arrangement forming a more precise, denser, and more adherent coating. Embodiments of the present invention provide improved pull strength by compressively constraining the optical fiber within the coating and by closing microcracks.

7. 发明授权

US06579425B2 System and method for forming base coat and thin film layers by sequential sputter depositing 失效
标题翻译：通过顺序溅射沉积形成底涂层和薄膜层的系统和方法
公开(公告)号：US06579425B2
公开(公告)日：2003-06-17
申请号：US09906881
申请日：2001-07-16
申请人： Apostolos Voutsas , Yukihiko Nakata
发明人： Apostolos Voutsas , Yukihiko Nakata
IPC分类号： C23C1435
CPC分类号： C23C14/568 , C23C14/165
摘要： A system and method are provided to sequentially deposit a silicon dioxide base coat barrier layer adjacent a thin silicon film, to minimize the formation of water and —OH radicals. Both the base coat and thin silicon films are sputter to eliminate hydrogen chemistries. Further, the sputter processes are conducted sequentially, without breaking the vacuum seat to minimize the absorption of water in the base coat layer that conventionally occurs between deposition steps. This process eliminates the total number of process steps required, as there is no longer a need for furnace annealing the base coat before the deposition of the thin silicon film, and no longer a need for a dehydrogenation annealing step after the deposition of the thin silicon film.
摘要翻译：提供了一种系统和方法，以顺次沉积邻近薄硅膜的二氧化硅基底涂层阻挡层，以最小化水和-OH自由基的形成。底涂层和薄硅膜都被溅射以消除氢化学物质。此外，依次进行溅射处理，而不破坏真空座，以使沉积步骤之间常规发生的底涂层中的水的吸收最小化。该方法消除了所需的工艺步骤的总数，因为在沉积薄硅膜之前不再需要对底涂层进行炉退火，并且在沉积薄硅之后不再需要脱氢退火步骤电影。

8. 发明授权

US06494999B1 Magnetron sputtering apparatus with an integral cooling and pressure relieving cathode 失效
标题翻译：具有集成冷却和减压阴极的磁控溅射装置
公开(公告)号：US06494999B1
公开(公告)日：2002-12-17
申请号：US09708735
申请日：2000-11-09
申请人： Manuel J. Herrera , Philip G. Pitcher
发明人： Manuel J. Herrera , Philip G. Pitcher
IPC分类号： C23C1435
CPC分类号： H01J37/3408 , C23C14/3407
摘要： A sputtering apparatus includes a sputtering process chamber, a sputtering target assembly, and an adjustable magnetron assembly. The sputtering target assembly includes heating/cooling passages within the sputtering target assembly. A first side of a heat exchanger/pressure relieving plate is attached to a target backing. A second or opposing side of the heat exchanger/pressure relieving plate is attached to an insulation cover to form, within the sputtering target assembly, pressure relieving vacuum passages. The target assembly completely covers and seals against a high-vacuum-compatible insulator resting over and sealed to a top flange of the process chamber. A magnetron assembly resting over the target assembly, is independent from vacuum, or vacuum components, and provides means to move or scan a magnetron or magnet array over the target assembly. The distance between the magnetron and target assembly is adjustable throughout the useful life of the target independent from vacuum, or vacuum components.
摘要翻译：溅射装置包括溅射处理室，溅射靶组件和可调磁控管组件。溅射靶组件包括溅射靶组件内的加热/冷却通道。热交换器/减压板的第一侧连接到目标衬套。热交换器/减压板的第二或相对侧附接到绝缘盖，以在溅射靶组件内形成减压真空通道。目标组件完全覆盖并密封靠在处理室的顶部凸缘上并密封到高真空相容的绝缘体上。放置在目标组件上的磁控管组件独立于真空或真空部件，并且提供在目标组件上移动或扫描磁控管或磁体阵列的装置。磁控管和目标组件之间的距离在靶的整个使用寿命内是可调节的，独立于真空或真空组件。

9. 发明授权

US06464841B1 Cathode having variable magnet configuration 失效
标题翻译：具有可变磁体配置的阴极
公开(公告)号：US06464841B1
公开(公告)日：2002-10-15
申请号：US08812091
申请日：1997-03-04
申请人： Steven Hurwitt
发明人： Steven Hurwitt
IPC分类号： C23C1435
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A sputtering system for depositing a thin film onto a substrate is disclosed wherein the system includes an evacuatable chamber which includes the substrate. In particular, the system includes a target positioned within the chamber, wherein the target has a back surface and a sputtering surface. Further, the system includes plasma for eroding the target to provide material for forming the thin film wherein erosion of the target occurs in a predetermined erosion pattern and is controlled by a shape of the plasma. The system also includes a support for supporting the substrate opposite the sputtering surface. A magnet arrangement is provided which provides a magnetic field on the target for controlling the shape of the plasma, wherein the magnet arrangement is positioned adjacent the back surface. The magnet arrangement includes a plurality of magnet segments which may be moved into desired positions so as to change the shape of the magnet arrangement. This enables adjustment of a dwell time of the magnetic field over predetermined portions of the target to change the shape of the plasma and thus change the erosion pattern of the target.
摘要翻译：公开了一种用于将薄膜沉积到基底上的溅射系统，其中所述系统包括包括所述基底的可抽空腔。特别地，该系统包括定位在室内的靶，其中靶具有后表面和溅射表面。此外，该系统包括用于侵蚀靶的等离子体，以提供用于形成薄膜的材料，其中以预定的侵蚀模式发生靶的侵蚀并且由等离子体的形状控制。该系统还包括用于支撑与溅射表面相对的衬底的支撑件。提供磁体布置，其在目标上提供磁场以控制等离子体的形状，其中磁体布置邻近背面定位。磁体布置包括可以移动到期望位置以便改变磁体布置的形状的多个磁体段。这使得能够在目标的预定部分上调整磁场的驻留时间，以改变等离子体的形状，从而改变目标的侵蚀模式。

10. 发明授权

US06447651B1 High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers 有权
标题翻译：高磁导率磁屏蔽，用于改善非磁化等离子体处理室中的工艺均匀性
公开(公告)号：US06447651B1
公开(公告)日：2002-09-10
申请号：US09800798
申请日：2001-03-07
申请人： Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka , Canfeng Lai , Robert Duncan
发明人： Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka , Canfeng Lai , Robert Duncan
IPC分类号： C23C1435
CPC分类号： C23C16/45508 , C23C16/507 , C23C16/52
摘要： A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.
摘要翻译：提供了一种用于在等离子体沉积工艺期间在处理室中在衬底上形成层的方法和装置。在处理室中形成等离子体，具有适于沉积层的前体气体的工艺气体流入处理室，并且具有小于约0.5高斯的强度的磁场在处理室内衰减。这种磁场的衰减导致在沉积期间实现的工艺均匀度的改善。

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