专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06825617B2 Semiconductor processing apparatus 失效
标题翻译：半导体处理装置
公开(公告)号：US06825617B2
公开(公告)日：2004-11-30
申请号：US10373711
申请日：2003-02-27
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit includes a setting unit for enabling a user to set a temperature of the semiconductor wafer and control unit for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.
摘要翻译：处理设置在处理设备主单元的处理室中的半导体晶片的半导体处理设备包括：设置单元，用于使用户能够设置用于控制半导体晶片的处理的半导体晶片和控制单元的温度，由设置单元设置的半导体晶片的温度。

2. 发明授权

US06798141B2 Plasma accelarator arrangement 有权
标题翻译：等离子体加速器布置
公开(公告)号：US06798141B2
公开(公告)日：2004-09-28
申请号：US10239274
申请日：2002-09-20
申请人： Günter Kornfeld , Werner Schwertfeger
发明人： Günter Kornfeld , Werner Schwertfeger
IPC分类号： H01J724
CPC分类号： F03H1/0075 , H05H1/54
摘要： For a plasma accelerator arrangement having a focused electron beam introduced into a plasma chamber, an annular structure of the chamber and a hollow cylindrical form of the electron beam are presented. A beam-guiding magnet system and, if appropriate, an electrode system is preferably formed in a plurality of stages in an adapted toroidal form.
摘要翻译：对于具有引入等离子体室中的聚焦电子束的等离子体加速器装置，呈现室的环形结构和电子束的中空圆柱形形式。光束引导磁体系统，如果合适的话，电极系统优选以适合的环形形式形成多个阶段。

3. 发明授权

US06777881B2 Power supply apparatus for generating plasma 有权
标题翻译：用于产生等离子体的电源装置
公开(公告)号：US06777881B2
公开(公告)日：2004-08-17
申请号：US10292580
申请日：2002-11-13
申请人： Itsuo Yuzurihara , Masahiro Kikuchi , Toyoaki Suenaga , Yoichi Ishikawa
发明人： Itsuo Yuzurihara , Masahiro Kikuchi , Toyoaki Suenaga , Yoichi Ishikawa
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/32082 , H02M7/5387 , H05H1/46
摘要： A power supply apparatus for generating a plasma for supplying a high-frequency power to a plasma generating device which is a load. The power supply apparatus comprises: a DC power supply; a power conversion circuit which comprises an amplifier circuit of D-class comprising a plurality of switching elements, and which converts a DC power output of the DC power supply to a high-frequency power to output; and a load impedance conversion circuit which converts a load impedance to a predetermined delayed load, wherein the power supply apparatus is adapted to supply the high-frequency power output from the power conversion circuit to a plasma generating device through the load impedance conversion circuit.
摘要翻译：一种用于产生用于向作为负载的等离子体产生装置提供高频电力的等离子体的电源装置。电源装置包括：直流电源; 电源转换电路，包括具有多个开关元件的D级的放大电路，并将所述直流电源的直流电力输出转换为高频电力输出; 以及将负载阻抗转换为预定的延迟负载的负载阻抗转换电路，其中，所述电源装置适于通过所述负载阻抗变换电路将从所述电力转换电路输出的高频电力提供给等离子体发生装置。

4. 发明授权

US06777880B2 Device for specific particle manipulation and deposition 失效
标题翻译：用于特定粒子操纵和沉积的装置
公开(公告)号：US06777880B2
公开(公告)日：2004-08-17
申请号：US10403202
申请日：2003-03-31
申请人： Gregor Morfill , Hubertus Thomas , Timo Stuffler , Uwe Konopka
发明人： Gregor Morfill , Hubertus Thomas , Timo Stuffler , Uwe Konopka
IPC分类号： H01J724
CPC分类号： H01J37/32623 , H01J37/32321 , H01J37/32366
摘要： A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.
摘要翻译：用于操纵在载体或反应气体的等离子体中基本不均匀分布的颗粒的方法，其中颗粒之间的库仑相互作用非常低，使得颗粒基本上不形成等离子体结晶状态，并且颗粒以位置选择性对外部调节力和/或等离子体条件的方式进行位置选择性改变以将至少一部分颗粒施加到无掩模的基板表面上和/或使其在载体中进行位置选择性等离子体处理或反应气体。

5. 发明授权

US06703784B2 Electrode design for stable micro-scale plasma discharges 失效
标题翻译：电极设计用于稳定的微尺度等离子体放电
公开(公告)号：US06703784B2
公开(公告)日：2004-03-09
申请号：US10174234
申请日：2002-06-18
申请人： Paul A. Vonallmen
发明人： Paul A. Vonallmen
IPC分类号： H01J724
CPC分类号： H01J9/18 , H01J17/04
摘要： A microcavity plasma discharge device comprising a micro-cavity device structure which includes N dielectric material structures wherein N is a whole number greater than or equal to one, each N dielectric material structure including a dielectric spacer region with a first opening wherein the dielectric spacer region is sandwiched therebetween a first dielectric material region with a second opening and a second dielectric material region with a third opening wherein the second opening and the third opening are positioned adjacent to the first opening to form a trench with a width and wherein a first conductive material layer is sandwiched between the dielectric spacer region and the first dielectric material region and a second conductive material layer is sandwiched between the dielectric spacer region and the second dielectric material region.
摘要翻译：一种微腔等离子体放电装置，包括微腔装置结构，其包括N个介电材料结构，其中N是大于或等于1的整数，每个N电介质材料结构包括具有第一开口的电介质间隔区，其中电介质间隔区夹在其间具有第二开口的第一介电材料区域和具有第三开口的第二介电材料区域，其中第二开口和第三开口定位成与第一开口相邻，以形成具有宽度的沟槽，并且其中第一导电材料电介质间隔区域和第一电介质材料区域之间夹着第二导电材料层，并且第二导电材料层夹在电介质间隔区域和第二电介质材料区域之间。

6. 发明授权

US06661178B1 Metastable atom bombardment source 失效
标题翻译：亚稳原子轰击源
公开(公告)号：US06661178B1
公开(公告)日：2003-12-09
申请号：US09723221
申请日：2000-11-28
申请人： Michel J. Bertrand , Olivier Peraldi
发明人： Michel J. Bertrand , Olivier Peraldi
IPC分类号： H01J724
CPC分类号： H01J49/102 , H01J27/04
摘要： The metastable atom bombardment source provides a charged particle free beam of metastable species that can be used to bombard and ionize organic and inorganic substances in a gas phase. The metastable atoms are produced by inducing a discharge in a gas (rare gases or small molecules). The discharge is curved between the cathode and anode, with the cathode located in a medium pressure zone and the anode located off-axis in a low pressure zone. A nozzle located between the cathode and the anode provides a collimated beam of metastable atoms of low kinetic energy that is directed at an ion volume containing the substances to be analyzed. By selecting the energy of the metastable state, selective fragmentation of molecules, particularly large molecular weight molecules, can be carried out.
摘要翻译：亚稳态原子轰击源提供了一种可带电粒子的亚稳态物质束，可用于轰击和离子化气相中的有机和无机物质。亚稳态原子通过在气体（稀有气体或小分子）中的排放而产生。放电在阴极和阳极之间弯曲，阴极位于中压区域，阳极位于低压区域的轴外。位于阴极和阳极之间的喷嘴提供准直的低动能的亚稳态原子束，其指向含有待分析物质的离子体积。通过选择亚稳态的能量，可以进行分子，特别是大分子量分子的选择性碎裂。

7. 发明授权

US06657394B2 Reflection coefficient phase detector 有权
公开(公告)号：US06657394B2
公开(公告)日：2003-12-02
申请号：US09827719
申请日：2001-04-06
申请人： Kevin P. Nasman
发明人： Kevin P. Nasman
IPC分类号： H01J724
CPC分类号： G01R25/00
摘要： A phase detector which determines the phase based upon the output signals from a power coupler. The power coupler outputs a first signal and a second signal. The first and second signals are input to a magnitude detector which determines the magnitude of the relative phase between the first and second signals. The first and second signals are also input to a sign discriminator which determines the sign of the phase between the first and second signals.

8. 发明授权

US06642661B2 Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor 失效
公开(公告)号：US06642661B2
公开(公告)日：2003-11-04
申请号：US10228184
申请日：2002-08-27
申请人： Eric J. Strang
发明人： Eric J. Strang
IPC分类号： H01J724
CPC分类号： H01J37/32091 , H01J37/32174 , H01J37/32706
摘要： The present invention provides an apparatus and a method of generating and controlling plasma formed in a capacitively coupled plasma region between a plasma electrode and a bias electrode. The plasma electrode includes a plurality of sub-electrodes that are electrically insulated from one another. Radio frequency plasma generating electric power is provided to the plasma electrode. Radio frequency bias electric power, at a lower frequency than the plasma generating radio frequency electric power, is also provided. A first portion of the bias electric power is provided to the bias electrode, and a second portion of the bias electric power is provided to the plasma electrode. At least one filter, impedance matching network, phase shifter, and power splitter are used to affect the electric power provided to the electrodes.

9. 发明授权

US06617794B2 Method for controlling etch uniformity 失效
公开(公告)号：US06617794B2
公开(公告)日：2003-09-09
申请号：US10016971
申请日：2001-12-14
申请人： Michael Barnes , John Holland , Valentin Todorov , Mohit Jain , Alexander Paterson
发明人： Michael Barnes , John Holland , Valentin Todorov , Mohit Jain , Alexander Paterson
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/321
摘要： The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply. The method may further include controlling plasma uniformity in a semiconductor processing chamber, wherein the control process includes positioning a first coil above the processing chamber, the first coil being concentrically positioned about a vertical axis of the processing chamber, and positioning a second coil above the processing chamber, the second coil being concentrically positioned about the vertical axis of the processing chamber and radially outward from the first coil. The control process may further include supplying electrical power to the first and second coils with a single power distribution network to selectively regulate a magnetic field intensity generated by the first and second coils above a workpiece in the processing chamber.

10. 发明授权

US06597117B2 Plasma coil 失效
标题翻译：等离子线圈
公开(公告)号：US06597117B2
公开(公告)日：2003-07-22
申请号：US09998811
申请日：2001-11-30
申请人： Mike Leone , Jim Gernert , Wei Sun
发明人： Mike Leone , Jim Gernert , Wei Sun
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： Various embodiments of a plasma coil, methods of making the same, a processing apparatus utilizing plasma processes and methods of manufacture are disclosed. In one aspect, a plasma coil is provided that includes a first conductor coil that has a plurality of turns. An innermost of the plurality of turns terminates to define a central void portion and an outermost of the plurality of turns defines a peripheral portion. A first conductor plate is positioned in the central void portion of and coupled in series to the first conductor coil. The conductor plate provides a more uniform and intense electrical field in order to retard residue formation on plasma chamber windows.
摘要翻译：公开了等离子体线圈的各种实施例，其制造方法，使用等离子体处理和制造方法的处理装置。在一个方面，提供了包括具有多个匝数的第一导体线圈的等离子体线圈。多个匝中的最内侧终止以限定中心空隙部分，并且多个匝中的最外侧限定周边部分。第一导体板位于第一导体线圈的中心空隙部分并串联连接。导体板提供更均匀和强烈的电场，以便延迟等离子体室窗口上的残留物形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式