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1. 发明授权

US06239553B1 RF plasma source for material processing 有权
标题翻译： RF等离子体源进行材料加工
公开(公告)号：US06239553B1
公开(公告)日：2001-05-29
申请号：US09296934
申请日：1999-04-22
申请人： Mike Barnes , Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka
发明人： Mike Barnes , Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka
IPC分类号： H01J724
CPC分类号： H01J37/321 , H05H1/46
摘要： The present invention provides a plasma source that maintains a low coil voltage in the vicinity of the plasma tube, thereby reducing the capacitive coupling between the coil and the plasma and significantly reducing the erosion from the internal surfaces of the plasma tube. The plasma source generally comprises a coil having a first coil segment and a second coil segment, an RF power source connected to the coil and an enclosure disposed between the first coil segment and the second coil segment. The invention also provides a method for generating a plasma, comprising: disposing an enclosure between a first coil segment and a second coil segment; introducing a gas into the enclosure; and supplying an RF power to the coil segments to excite the gas into a plasma state. The invention provides a variety of coil operations, including symmetrical coil configuration, asymmetrical coil configuration with the matching networks adjusted to provide a low voltage near the plasma chamber, self-resonant configuration, grounded coil center configuration having coil segments driven in parallel and physically grounded near the plasma chamber, and pairs configurations having a plurality of coil segment pairs driven in series or parallel.
摘要翻译：本发明提供了一种在等离子体管附近保持低线圈电压的等离子体源，从而减小了线圈与等离子体之间的电容耦合，并显着减少了等离子体管内表面的侵蚀。等离子体源通常包括具有第一线圈段和第二线圈段的线圈，连接到线圈的RF电源和设置在第一线圈段和第二线圈段之间的外壳。本发明还提供了一种用于产生等离子体的方法，包括：在第一线圈段和第二线圈段之间设置外壳; 将气体引入外壳; 并且向线圈段提供RF功率以将气体激发成等离子体状态。本发明提供了各种线圈操作，包括对称线圈配置，不对称线圈配置，匹配网络被调整以在等离子体室附近提供低电压，自谐振配置，具有线圈段并联驱动并接地的线圈中心配置并且具有串联或并联驱动的多个线圈段对的配置配置。

2. 发明授权

US6083344A Multi-zone RF inductively coupled source configuration 失效
标题翻译：多区域射频感应耦合源配置
公开(公告)号：US6083344A
公开(公告)日：2000-07-04
申请号：US865432
申请日：1997-05-29
申请人： Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
发明人： Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/321
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

3. 发明授权

US06189483B1 Process kit 失效
标题翻译：工艺套件
公开(公告)号：US06189483B1
公开(公告)日：2001-02-20
申请号：US08865567
申请日：1997-05-29
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Kaveh Niazi , Hiroji Hanawa
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Kaveh Niazi , Hiroji Hanawa
IPC分类号： H01L2100
CPC分类号： C23C16/45521 , C23C16/4405 , C23C16/4585 , C23C16/4586 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32862 , H01L21/6831 , Y10S156/915
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

4. 发明授权

US06447651B1 High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers 有权
标题翻译：高磁导率磁屏蔽，用于改善非磁化等离子体处理室中的工艺均匀性
公开(公告)号：US06447651B1
公开(公告)日：2002-09-10
申请号：US09800798
申请日：2001-03-07
申请人： Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka , Canfeng Lai , Robert Duncan
发明人： Tetsuya Ishikawa , Kaveh Niazi , Tsutomu Tanaka , Canfeng Lai , Robert Duncan
IPC分类号： C23C1435
CPC分类号： C23C16/45508 , C23C16/507 , C23C16/52
摘要： A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.
摘要翻译：提供了一种用于在等离子体沉积工艺期间在处理室中在衬底上形成层的方法和装置。在处理室中形成等离子体，具有适于沉积层的前体气体的工艺气体流入处理室，并且具有小于约0.5高斯的强度的磁场在处理室内衰减。这种磁场的衰减导致在沉积期间实现的工艺均匀度的改善。

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