专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130109133A1 REAR-POINT-CONTACT PROCESS OR PHOTOVOLTAIC CELLS 审中-公开
标题翻译：后点接触过程或光伏电池
公开(公告)号：US20130109133A1
公开(公告)日：2013-05-02
申请号：US13651221
申请日：2012-10-12
申请人： Michel R. Frei , Hemant P. Mungekar , Hari K. Ponnekanti
发明人： Michel R. Frei , Hemant P. Mungekar , Hari K. Ponnekanti
IPC分类号： H01L31/02
CPC分类号： H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/18 , Y02E10/547
摘要： Embodiments of the invention generally relate to methods for performing rear-point-contact processes on substrates, particularly solar cell substrates. The methods generally include disposing a substrate on a substrate support which functions as a mask during deposition of a passivation layer on a back surface of the substrate. A process gas is introduced to an area between the back surface of the substrate and the substrate support in order to deposit the passivation layer on the back surface of the substrate. The deposited passivation layer has openings therethrough in order to facilitate electrical contact of the substrate with a metallization layer subsequently formed over the passivation layer. The passivation layer is formed without requiring a separate patterning and etching process of the passivation layer.
摘要翻译：本发明的实施例一般涉及在衬底，特别是太阳能电池衬底上执行背点接触工艺的方法。所述方法通常包括在衬底的背面上沉积钝化层的过程中将衬底设置在衬底支撑体上，其用作掩模。将工艺气体引入到衬底的背面和衬底支撑件之间的区域中，以便将钝化层沉积在衬底的背面上。沉积的钝化层具有穿过其的开口，以便于衬底与随后在钝化层上形成的金属化层的电接触。形成钝化层，而不需要钝化层的单独图案化和蚀刻工艺。

2. 发明申请

US20130171757A1 ADVANCED PLATFORM FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS 审中-公开
标题翻译：用于封闭晶体硅太阳能电池的先进平台
公开(公告)号：US20130171757A1
公开(公告)日：2013-07-04
申请号：US13732662
申请日：2013-01-02
申请人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
发明人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/568 , C23C16/54 , H01L21/67115 , H01L21/67173 , H01L21/6776
摘要： The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
摘要翻译：本发明通常提供用于形成太阳能电池器件的一个或多个区域的高通量衬底处理系统。在处理系统的一种配置中，一个或多个太阳能电池钝化或电介质层被沉积并在包含在高通量衬底处理系统内的一个或多个处理室内进一步处理。处理室可以是例如等离子体增强化学气相沉积（PECVD）室，低压化学气相沉积（LPCVD）室，原子层沉积（ALD）室，物理气相沉积（PVD）或溅射室，热处理室（例如，RTA或RTO室），基板重新定向室（例如，翻转室）和/或其它类似的处理室。

3. 发明申请

US20130273262A1 STATIC DEPOSITION PROFILE MODULATION FOR LINEAR PLASMA SOURCE 审中-公开
标题翻译：线性等离子体源的静态沉积剖面调制
公开(公告)号：US20130273262A1
公开(公告)日：2013-10-17
申请号：US13447035
申请日：2012-04-13
申请人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
发明人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
IPC分类号： C23C16/50
CPC分类号： C23C16/45565 , C23C16/45589 , C23C16/50 , C23C16/54
摘要： Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
摘要翻译：本文描述了使用线性等离子体源来控制膜沉积的方法和装置。该装置包括：喷嘴，其中具有用于使气体流过其中的开口;输送机，用于支撑其上邻近喷淋头设置的一个或多个基板;以及用于使气体离子化的电源。电离气体可以是用于在衬底上沉积材料的源气体。可以例如使用包括在该装置中的气体整形装置来调节衬底上的材料的沉积轮廓。附加地或替代地，沉积轮廓可以通过使用可启动喷头来调节。该方法包括将衬底暴露于电离气体以在衬底上沉积膜，其中当衬底被输送到靠近喷头时，电离气体受到气体整形装置的影响，从而将膜均匀地沉积在衬底上。

4. 发明申请

US20110272024A1 MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS 审中-公开
标题翻译：晶体太阳能电池上功能和光学分级ARC层的多层SiN
公开(公告)号：US20110272024A1
公开(公告)日：2011-11-10
申请号：US13076295
申请日：2011-03-30
申请人： Dongwon Choi , Michael P. Stewart , Li Xu , Hemant P. Mungekar , Sunhom Paak , Kenneth MacWilliams
发明人： Dongwon Choi , Michael P. Stewart , Li Xu , Hemant P. Mungekar , Sunhom Paak , Kenneth MacWilliams
IPC分类号： H01L31/0232 , H01L31/18 , C23C16/34 , C23C16/50 , C23C16/52 , H01L31/0216 , H01L21/66
CPC分类号： H01L31/02168 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention include a solar cell and methods of forming a solar cell. Specifically, the methods may be used to form a passivation/anti-reflection layer having combined functional and optical gradient properties on a solar cell substrate. The methods may include flowing a first process gas mixture into a process volume within a processing chamber generating plasma in the processing chamber at a power density of greater than 0.65 W/cm2 depositing a silicon nitride-containing interface sub-layer on a solar cell substrate in the process volume, flowing a second process gas mixture into the process volume, and depositing a silicon nitride-containing bulk sub-layer on the silicon nitride-containing interface sub-layer.
摘要翻译：本发明的实施例包括太阳能电池和形成太阳能电池的方法。具体地，可以使用这些方法来形成在太阳能电池基板上具有组合的功能和光学梯度特性的钝化/抗反射层。所述方法可以包括将第一工艺气体混合物流入处理室内的处理容积，所述处理室在处理室中以大于0.65W / cm 2的功率密度产生等离子体，将含氮化硅的界面子层沉积在太阳能电池基板在处理体积中，使第二工艺气体混合物流入处理体积，以及在含氮化硅的界面子层上沉积含氮化硅的体层状层。

5. 发明申请

US20100311203A1 Passivation process for solar cell fabrication 失效
标题翻译：太阳能电池制造的钝化过程
公开(公告)号：US20100311203A1
公开(公告)日：2010-12-09
申请号：US12479139
申请日：2009-06-05
申请人： Peter Borden , Michael P. Stewart , Li Xu , Hemant P. Mungekar , Christopher S. Olsen
发明人： Peter Borden , Michael P. Stewart , Li Xu , Hemant P. Mungekar , Christopher S. Olsen
IPC分类号： H01L31/0216
CPC分类号： H01L31/1868 , H01L31/022425 , H01L31/072 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.
摘要翻译：本发明的实施例考虑使用新颖的等离子体氧化工艺形成高效太阳能电池，以在太阳能电池基板的表面上形成钝化膜堆叠。在一个实施方案中，所述方法包括提供在衬底的背面上具有第一类型的掺杂原子的衬底和在衬底的前表面上的第二类型的掺杂原子，等离子体氧化衬底的背表面以形成氧化层，并在氧化层上形成氮化硅层。

6. 发明授权

US07799704B2 Gas baffle and distributor for semiconductor processing chamber 有权
公开(公告)号：US07799704B2
公开(公告)日：2010-09-21
申请号：US12253687
申请日：2008-10-17
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4404
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

7. 发明授权

US07329586B2 Gapfill using deposition-etch sequence 有权
标题翻译： Gapfill使用沉积蚀刻序列
公开(公告)号：US07329586B2
公开(公告)日：2008-02-12
申请号：US11166357
申请日：2005-06-24
申请人： Manoj Vellaikal , Hemant P. Mungekar , Young S. Lee , Yasutoshi Okuno , Hiroshi Yuasa
发明人： Manoj Vellaikal , Hemant P. Mungekar , Young S. Lee , Yasutoshi Okuno , Hiroshi Yuasa
IPC分类号： H01L21/76
CPC分类号： H01L21/31612 , C23C16/045 , H01L21/02164 , H01L21/02274
摘要： Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.
摘要翻译：方法在设置在基板处理室中的基板上沉积膜。基板在相邻的凸起表面之间形成间隙。将第一前体沉积气体的流动提供给基板处理室。由第一沉积气体流形成第一高密度等离子体，以在第一沉积工艺和第二沉积工艺之后，在第一沉积工艺之后在膜上沉积薄膜的第一部分，直到间隙闭合为止。将膜的第一部分的足够部分回蚀刻以重新打开间隙。向基板处理室提供第二前体沉积气体的流动。第二高密度等离子体由第二前体沉积气体的流形成，以便在具有同时沉积和溅射部件的第二沉积工艺的基础上沉积薄膜的第二部分并且在重新打开的间隙内。

8. 发明授权

US07229931B2 Oxygen plasma treatment for enhanced HDP-CVD gapfill 失效
标题翻译：氧等离子体处理用于增强HDP-CVD填隙
公开(公告)号：US07229931B2
公开(公告)日：2007-06-12
申请号：US10870232
申请日：2004-06-16
申请人： Hemant P. Mungekar , Young S Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
发明人： Hemant P. Mungekar , Young S Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/45523 , C23C16/505 , H01L21/02274 , H01L21/31612
摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.
摘要翻译：提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。将流体气体以至少500sccm的流量引入基板处理室。形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入差距。此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。

9. 发明申请

US20110240114A1 METHOD OF FORMING A NEGATIVELY CHARGED PASSIVATION LAYER OVER A DIFFUSED P-TYPE REGION 审中-公开
标题翻译：在扩展的P型区域形成负电荷的钝化层的方法
公开(公告)号：US20110240114A1
公开(公告)日：2011-10-06
申请号：US13047665
申请日：2011-03-14
申请人： Michael P. Stewart , Mukul Agrawal , Rohit Mishra , Hemant P. Mungekar , Timothy Weidman
发明人： Michael P. Stewart , Mukul Agrawal , Rohit Mishra , Hemant P. Mungekar , Timothy Weidman
IPC分类号： H01L31/0216 , H01L31/02 , H01L31/0248 , H01L31/0264 , H01L31/0376 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/068 , Y02E10/547
摘要： The present invention generally provides a method of forming a high quality passivation layer over a p-type doped region to form a high efficiency solar cell device. Embodiments of the present invention may be especially useful for preparing a surface of a boron doped region formed in a silicon substrate. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface and then deposit a charged dielectric layer and passivation layer thereon.
摘要翻译：本发明通常提供一种在p型掺杂区上形成高质量钝化层以形成高效太阳能电池器件的方法。本发明的实施例可以特别用于制备形成在硅衬底中的硼掺杂区的表面。在一个实施例中，所述方法包括将太阳能电池基板的表面暴露于等离子体以清洁和修改表面的物理，化学和/或电特性，然后在其上沉积带电介质层和钝化层。

10. 发明授权

US07740706B2 Gas baffle and distributor for semiconductor processing chamber 失效
标题翻译：用于半导体处理室的气体挡板和分配器
公开(公告)号：US07740706B2
公开(公告)日：2010-06-22
申请号：US11564150
申请日：2006-11-28
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4405 , C23C16/45563 , C23C16/45591 , H01J37/3244 , H01J37/32449
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
摘要翻译：提供了用于在半导体处理室中分配气体的装置和方法。在一个实施例中，用于气体处理室的气体分配器包括主体。主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。气体偏转表面包括凹面。凹面包括至少约75％的气体偏转表面的表面积。凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式