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1. 发明申请

US20130171757A1 ADVANCED PLATFORM FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS 审中-公开
标题翻译：用于封闭晶体硅太阳能电池的先进平台
公开(公告)号：US20130171757A1
公开(公告)日：2013-07-04
申请号：US13732662
申请日：2013-01-02
申请人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
发明人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/568 , C23C16/54 , H01L21/67115 , H01L21/67173 , H01L21/6776
摘要： The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
摘要翻译：本发明通常提供用于形成太阳能电池器件的一个或多个区域的高通量衬底处理系统。在处理系统的一种配置中，一个或多个太阳能电池钝化或电介质层被沉积并在包含在高通量衬底处理系统内的一个或多个处理室内进一步处理。处理室可以是例如等离子体增强化学气相沉积（PECVD）室，低压化学气相沉积（LPCVD）室，原子层沉积（ALD）室，物理气相沉积（PVD）或溅射室，热处理室（例如，RTA或RTO室），基板重新定向室（例如，翻转室）和/或其它类似的处理室。

2. 发明申请

US20130273262A1 STATIC DEPOSITION PROFILE MODULATION FOR LINEAR PLASMA SOURCE 审中-公开
标题翻译：线性等离子体源的静态沉积剖面调制
公开(公告)号：US20130273262A1
公开(公告)日：2013-10-17
申请号：US13447035
申请日：2012-04-13
申请人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
发明人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
IPC分类号： C23C16/50
CPC分类号： C23C16/45565 , C23C16/45589 , C23C16/50 , C23C16/54
摘要： Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
摘要翻译：本文描述了使用线性等离子体源来控制膜沉积的方法和装置。该装置包括：喷嘴，其中具有用于使气体流过其中的开口;输送机，用于支撑其上邻近喷淋头设置的一个或多个基板;以及用于使气体离子化的电源。电离气体可以是用于在衬底上沉积材料的源气体。可以例如使用包括在该装置中的气体整形装置来调节衬底上的材料的沉积轮廓。附加地或替代地，沉积轮廓可以通过使用可启动喷头来调节。该方法包括将衬底暴露于电离气体以在衬底上沉积膜，其中当衬底被输送到靠近喷头时，电离气体受到气体整形装置的影响，从而将膜均匀地沉积在衬底上。

3. 发明申请

US20130059092A1 METHOD AND APPARATUS FOR GAS DISTRIBUTION AND PLASMA APPLICATION IN A LINEAR DEPOSITION CHAMBER 审中-公开
标题翻译：气体分布和等离子体在线性沉积室应用中的方法与装置
公开(公告)号：US20130059092A1
公开(公告)日：2013-03-07
申请号：US13605449
申请日：2012-09-06
申请人： HEMANT P. MUNGEKAR , Alexander S. Polyak , Michael S. Cox
发明人： HEMANT P. MUNGEKAR , Alexander S. Polyak , Michael S. Cox
IPC分类号： C23C16/513 , H05H1/24
CPC分类号： H01J37/3244 , C23C16/45504 , C23C16/45557 , C23C16/45563 , C23C16/4584 , C23C16/50 , C23C16/52 , C23C16/54 , H01J37/32779
摘要： A method and apparatus for processing a substrate is described. One embodiment of the invention provides an apparatus for forming thin films. The apparatus comprises a chamber defining an internal volume, a plasma source disposed within the internal volume, and at least one gas injection source disposed adjacent the plasma source within the internal volume, wherein the at least one gas injection source comprises a first channel and a second channel for delivering gases to the internal volume, the first channel delivering a gas at a first pressure or a first density and the second channel delivering a gas at a second pressure or a second density, the first pressure or the first density being different than the second pressure or the second density.
摘要翻译：描述了用于处理衬底的方法和设备。本发明的一个实施例提供了一种用于形成薄膜的装置。该装置包括限定内部体积的室，设置在内部体积内的等离子体源以及在内部体积内与等离子体源相邻设置的至少一个气体注入源，其中至少一个气体注入源包括第一通道和用于将气体输送到内部容积的第二通道，所述第一通道以第一压力或第一密度输送气体，所述第二通道输送处于第二压力或第二密度的气体，所述第一压力或所述第一密度不同于第二压力或第二密度。

4. 发明申请

US20140127404A1 Apparatus For Spatial Atomic Layer Deposition With Recirculation And Methods Of Use 审中-公开
标题翻译：用于具有循环的空间原子层沉积的装置和使用方法
公开(公告)号：US20140127404A1
公开(公告)日：2014-05-08
申请号：US14073114
申请日：2013-11-06
申请人： Joseph Yudovsky , Hemant P. Mungekar , Michael S. Cox , Zheng Yuan
发明人： Joseph Yudovsky , Hemant P. Mungekar , Michael S. Cox , Zheng Yuan
IPC分类号： C23C16/455
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45593
摘要： Provided are atomic layer deposition apparatus and methods including a plurality of elongate gas ports and pump ports in communication with multiple conduits to transport the gases from the processing chamber to be condensed, stored and/or recirculated.
摘要翻译：提供的是原子层沉积设备和方法，包括多个细长气体端口和与多个管道连通的泵口，以将来自处理室的气体输送到待冷凝，储存和/或再循环。

5. 发明申请

US20130104996A1 METHOD FOR BALANCING GAS FLOW SUPPLYING MULTIPLE CVD REACTORS 审中-公开
标题翻译：用于平衡气体供应多种CVD反应器的方法
公开(公告)号：US20130104996A1
公开(公告)日：2013-05-02
申请号：US13647160
申请日：2012-10-08
申请人： JEONGHOON OH , Michael S. Cox , Alexander S. Polyak
发明人： JEONGHOON OH , Michael S. Cox , Alexander S. Polyak
IPC分类号： F16K11/00
CPC分类号： F16K11/00 , C23C16/45561 , Y10T137/0324 , Y10T137/877
摘要： Gas supply systems and methods are disclosed for solar cell production using multiple parallel reactors. A first gas supply control system has a gas panel having a plurality of gas outlet lines, supplying a first main supply line having a main line mass flow meter measuring the combined total gas mass flow rate in the first main supply line. First, second and third branch lines supplied by the first main supply line each branch line having mass flow controller and one or more control loops established between the mass flow meter and the branch line mass flow controllers. The control loop determining a set point for each of the branch mass flow controllers based on dividing the flow rate of the total gas flow by the number of reactors in use. In addition, a second gas supply control system may be coupled to the first gas supply control system to avoid mixing certain gases before they enter the respective reactors to which they are supplied.
摘要翻译：公开了使用多个并联反应器的太阳能电池生产的气体供应系统和方法。第一气体供给控制系统具有具有多个气体出口管线的气体面板，供给具有测量第一主供应管线中的总气体质量流量的总线质量流量计的第一主供应管线。第一，第二和第三分支线由第一主供应线提供，每个分支线具有质量流量控制器和在质量流量计和分支线质量流量控制器之间建立的一个或多个控制回路。控制回路基于将总气体流量的流量除以使用的反应堆的数量来确定每个分支质量流量控制器的设定点。此外，第二气体供应控制系统可以耦合到第一气体供应控制系统，以避免在它们进入它们所供应的相应反应器之前混合某些气体。

6. 发明授权

US06712020B2 Toroidal plasma source for plasma processing 失效
标题翻译：用于等离子体处理的环形等离子体源
公开(公告)号：US06712020B2
公开(公告)日：2004-03-30
申请号：US10170827
申请日：2002-06-12
申请人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
发明人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , H01J37/321
摘要： A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
摘要翻译：衬底处理室（10）内的环形等离子体源（28）。环形等离子体源形成具有θ对称性的极向等离子体。极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

7. 发明授权

US06418874B1 Toroidal plasma source for plasma processing 失效
标题翻译：用于等离子体处理的环形等离子体源
公开(公告)号：US06418874B1
公开(公告)日：2002-07-16
申请号：US09584167
申请日：2000-05-25
申请人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
发明人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , H01J37/321
摘要： A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
摘要翻译：衬底处理室（10）内的环形等离子体源（28）。环形等离子体源形成具有θ对称性的极向等离子体。极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

8. 发明授权

US09580796B2 Deposition apparatus and methods to reduce deposition asymmetry 有权
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US09580796B2
公开(公告)日：2017-02-28
申请号：US13173197
申请日：2011-06-30
申请人： Alan Ritchie , Michael S. Cox
发明人： Alan Ritchie , Michael S. Cox
IPC分类号： C23C14/00 , C23C14/35 , C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , C23C16/517 , H01J37/32651 , H01J37/34 , H01J37/3411 , H01J37/3455
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有基本上符合中空圆筒形状的导电中空圆筒和基本上连续的接地屏蔽。

9. 发明授权

US08486242B2 Deposition apparatus and methods to reduce deposition asymmetry 失效
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US08486242B2
公开(公告)日：2013-07-16
申请号：US12906632
申请日：2010-10-18
申请人： Michael S. Cox
发明人： Michael S. Cox
IPC分类号： C23C14/35 , C23C16/00
CPC分类号： C23C14/35 , C23C14/34 , C23C16/50 , H01J37/32669 , H01J37/3405
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有导电中空圆柱体和导电中空圆柱体外部的磁体，其能够影响导电中空圆柱体上的电流密度。

10. 发明申请

US20100252417A1 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：US20100252417A1
公开(公告)日：2010-10-07
申请号：US12754473
申请日：2010-04-05
申请人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
发明人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

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