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1. 发明申请

US20130273262A1 STATIC DEPOSITION PROFILE MODULATION FOR LINEAR PLASMA SOURCE 审中-公开
标题翻译：线性等离子体源的静态沉积剖面调制
公开(公告)号：US20130273262A1
公开(公告)日：2013-10-17
申请号：US13447035
申请日：2012-04-13
申请人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
发明人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
IPC分类号： C23C16/50
CPC分类号： C23C16/45565 , C23C16/45589 , C23C16/50 , C23C16/54
摘要： Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
摘要翻译：本文描述了使用线性等离子体源来控制膜沉积的方法和装置。该装置包括：喷嘴，其中具有用于使气体流过其中的开口;输送机，用于支撑其上邻近喷淋头设置的一个或多个基板;以及用于使气体离子化的电源。电离气体可以是用于在衬底上沉积材料的源气体。可以例如使用包括在该装置中的气体整形装置来调节衬底上的材料的沉积轮廓。附加地或替代地，沉积轮廓可以通过使用可启动喷头来调节。该方法包括将衬底暴露于电离气体以在衬底上沉积膜，其中当衬底被输送到靠近喷头时，电离气体受到气体整形装置的影响，从而将膜均匀地沉积在衬底上。

2. 发明授权

US08859324B2 Methods of manufacturing solar cell devices 有权
标题翻译：制造太阳能电池装置的方法
公开(公告)号：US08859324B2
公开(公告)日：2014-10-14
申请号：US13739390
申请日：2013-01-11
申请人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
发明人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
IPC分类号： H01L21/00 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.
摘要翻译：本发明的实施例涉及制造太阳能电池的方法。特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

3. 发明申请

US20130183796A1 METHODS OF MANUFACTURING SOLAR CELL DEVICES 有权
标题翻译：制造太阳能电池器件的方法
公开(公告)号：US20130183796A1
公开(公告)日：2013-07-18
申请号：US13739390
申请日：2013-01-11
申请人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
发明人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.
摘要翻译：本发明的实施例涉及制造太阳能电池的方法。特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

4. 发明授权

US06413871B1 Nitrogen treatment of polished halogen-doped silicon glass 有权
公开(公告)号：US06413871B1
公开(公告)日：2002-07-02
申请号：US09337983
申请日：1999-06-22
申请人： Hichem M'Saad , Derek R. Witty , Manoj Vellaikal , Lin Zhang , Yaxin Wang
发明人： Hichem M'Saad , Derek R. Witty , Manoj Vellaikal , Lin Zhang , Yaxin Wang
IPC分类号： H01L213105
摘要： A film of fluorine-doped silicon glass (“FSG”) is exposed to a nitrogen-containing plasma to nitride a portion of the FSG film. In one embodiment, the FSG film is chemically-mechanically polished prior to nitriding. The nitriding process is believed to scavenge moisture and free fluorine from the FSG film. The plasma can heat the FSG film to about 400° C. for about one minute to incorporate about 0.4 atomic percent nitrogen to a depth of nearly a micron. Thus, the nitriding process can passivate the FSG film deeper than a via depth.

5. 发明授权

US06890597B2 HDP-CVD uniformity control 失效
标题翻译： HDP-CVD均匀性控制
公开(公告)号：US06890597B2
公开(公告)日：2005-05-10
申请号：US10435296
申请日：2003-05-09
申请人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
发明人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
IPC分类号： C23C16/44 , C23C16/455 , C23C16/56 , C23C16/40
CPC分类号： C23C16/45502 , C23C16/45591 , C23C16/56
摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.
摘要翻译：沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。通过在衬底上变化的工艺来进行沉积和抛光。不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

6. 发明申请

US20130186464A1 BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SILICON SOLAR CELLS 审中-公开
标题翻译：用于改善硅太阳能电池表面钝化性能和稳定性的缓冲层
公开(公告)号：US20130186464A1
公开(公告)日：2013-07-25
申请号：US13733825
申请日：2013-01-03
申请人： Shuran Sheng , Lin Zhang
发明人： Shuran Sheng , Lin Zhang
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally relate to the fabrication of solar cells and more specifically to a buffer layer for improving the performance and stability of surface passivation of Si solar cells. Generally, a passivation layer stack containing a buffer layer (interlayer) is formed on a surface of the silicon-based substrate. In one embodiment, the passivation layer stack may be formed on the back surface of the substrate. In another embodiment, the passivation layer stack is formed on the back surface of the substrate and a front emitter region (light receiving surface) of the substrate.
摘要翻译：本发明的实施方案一般涉及太阳能电池的制造，更具体地涉及用于提高Si太阳能电池的表面钝化的性能和稳定性的缓冲层。通常，在硅基基板的表面上形成包含缓冲层（中间层）的钝化层堆叠。在一个实施例中，钝化层堆叠可以形成在衬底的背面上。在另一个实施例中，钝化层堆叠形成在衬底的背面和衬底的前发射极区（光接收表面）上。

7. 发明授权

US08334228B2 Fiberglass compositions 有权
标题翻译：玻璃纤维组合物
公开(公告)号：US08334228B2
公开(公告)日：2012-12-18
申请号：US12637737
申请日：2009-12-14
申请人： Yuqiang Zhang , Guorong Cao , Bing Zhang , Lin Zhang , Wenzhong Xing , Guijiang Gu
发明人： Yuqiang Zhang , Guorong Cao , Bing Zhang , Lin Zhang , Wenzhong Xing , Guijiang Gu
IPC分类号： C03C13/02 , C03C13/06
CPC分类号： C03C13/00
摘要： This invention involves a fiberglass composition containing the following components: SiO2, Al2O3, CaO, MgO, B2O3, F2, TiO2, K2O, Na2O, Fe2O3 and SO3. The weight percentage of each of the components are as follows: SiO2 58˜65%, CaO 20˜26%, Al2O3 9˜17%, MgO 0.5˜1%, B2O3 0˜5%, F2 0˜1%, TiO2 0.1˜1%, K2O+Na2O 0˜0.8%, Fe2O3 0.1˜0.5%, SO3 0˜0.6%. The ternary system, SiO2—Al2O3—CaO, is basis of the fiberglass composition in this invention, which also has low quantities of MgO and B2O3. In addition, the total amount of alkaline earth oxide and the proportional relationship between MgO and CaO are rationally designed, which helps to improve the mechanical strength, heat resistance, and chemical stability of the glass. It also has excellent manufacturing performance. Moreover, the raw materials of the fiberglass composition in this invention are low in cost, and the invention meets environmental protection requirements.
摘要翻译：本发明涉及含有以下组分的玻璃纤维组合物：SiO2，Al2O3，CaO，MgO，B2O3，F2，TiO2，K2O，Na2O，Fe2O3和SO3。每种组分的重量百分比如下：SiO 2 58〜65％，CaO 20〜26％，Al 2 O 3 9〜17％，MgO 0.5〜1％，B 2 O 3〜5％，F2 0〜1％，TiO 2 0.1 〜1％，K2O + Na2O 0〜0.8％，Fe2O3 0.1〜0.5％，SO3 0〜0.6％。三元体系SiO2-Al2O3-CaO是本发明玻璃纤维组合物的基础，它也具有低量的MgO和B2O3。此外，合理设计碱土金属的总量和MgO与CaO的比例关系，有利于提高玻璃的机械强度，耐热性和化学稳定性。它也具有优良的制造性能。此外，本发明的玻璃纤维组合物的原料成本低，本发明符合环保要求。

8. 发明授权

US08208692B2 Method and system for identifying a person using their finger-joint print 有权
标题翻译：用于识别使用他们的手指关节印刷的人的方法和系统
公开(公告)号：US08208692B2
公开(公告)日：2012-06-26
申请号：US12354537
申请日：2009-01-15
申请人： Lei Zhang , Lin Zhang , Hailong Zhu , David Zhang , Nan Luo
发明人： Lei Zhang , Lin Zhang , Hailong Zhu , David Zhang , Nan Luo
IPC分类号： G06K9/00
CPC分类号： G06K9/00006 , G06K9/3216 , G06K9/527
摘要： A method for identifying a person using their finger-joint print including the outer skin around the proximal interphalangeal joint of a finger, the method comprising: capturing (10) an image of the finger-joint print of the person; extracting (12) a region of interest (ROI) based on a local convexity property of the finger-joint print; extracting (13) features representing the orientation of the lines in a finger-joint print image from the ROI using an extended Gabor phase coding scheme and the extracted features are represented in competitive code maps; wherein angular distance between the competitive code maps is compared (14) with a reference set in a database to identify the person.
摘要翻译：一种用于使用包括手指近端指间关节周围的外皮的他们的指关节印迹识别人的方法，所述方法包括：捕获（10）人的手指关节印刷的图像; 基于手指关节印刷的局部凸性，提取（12）感兴趣区域（ROI）; 使用扩展Gabor相位编码方案提取（13）表示来自ROI的手指关联打印图像中的线的方向的特征，并且所提取的特征在竞争性代码图中表示; 其中将竞争性代码映射之间的角距离与数据库中的参考集进行比较（14）以识别该人。

9. 发明授权

US07799698B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07799698B2
公开(公告)日：2010-09-21
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01I21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

10. 发明申请

US20100016259A1 Malonyl-CoA Decarboxylase Inhibitors Useful as Metabolic Modulators 有权
标题翻译：用作代谢调节剂的丙二酰辅酶A脱羧酶抑制剂
公开(公告)号：US20100016259A1
公开(公告)日：2010-01-21
申请号：US12431720
申请日：2009-04-28
申请人： Thomas Arrhenius , Mi Chen , Jie Fei Cheng , Yujin Huang , Alex Michael Nadzan , Richard Julius Penuliar , David Mark Wallace , Lin Zhang , Gary D. Lopaschuk , Jason R. Dyck
发明人： Thomas Arrhenius , Mi Chen , Jie Fei Cheng , Yujin Huang , Alex Michael Nadzan , Richard Julius Penuliar , David Mark Wallace , Lin Zhang , Gary D. Lopaschuk , Jason R. Dyck
IPC分类号： A61K31/675 , A61K31/426 , A61K31/4409 , A61P35/00 , A61P3/10 , A61P3/04 , A61P9/04
CPC分类号： C07D233/64 , A61K31/16 , A61K31/41 , A61K31/415 , A61K31/4164 , A61K31/42 , A61K31/44 , A61K31/5375 , C07C33/48 , C07C215/24 , C07C233/22 , C07C307/10 , C07C323/14 , C07D239/42 , C07D261/04 , C07D261/08 , C07D277/46 , C07D277/48 , C07D277/52 , C07D285/135 , C07D307/46 , C07D401/12 , C07D413/06 , C07D413/12 , C07D417/12 , C07D417/14 , C07D487/08 , C07F9/6539
摘要： The present invention relates to novel compounds (I), their prodrugs, and the pharmaceutically acceptable salts as well as pharmaceutical compositions containing such compounds useful in treating certain metabolic diseases and diseases modulated by the inhibition of the enzyme malonyl-coenzyme A decarboxylase (malonyl-CoA decarboxylase, MCD). In particular, the invention relates to compounds and compositions and the methods for the prophylaxis, management and treatment of cardiovascular diseases, diabetes, acidosis, cancers, and obesity through the inhibition of malonyl-coenzyme A decarboxylase.
摘要翻译：本发明涉及新型化合物（I），其前药和药学上可接受的盐以及含有这样的化合物的药物组合物，其可用于治疗某些代谢疾病和通过抑制酶丙二酰辅酶A脱羧酶（丙二酰 - CoA脱羧酶，MCD）。特别地，本发明涉及通过抑制丙二酰辅酶A脱羧酶来预防，治疗和治疗心血管疾病，糖尿病，酸中毒，癌症和肥胖的化合物和组合物和方法。

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