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1. 发明授权

US09386357B2 Display of presentation elements 有权
标题翻译：显示表示元素
公开(公告)号：US09386357B2
公开(公告)日：2016-07-05
申请号：US13457520
申请日：2012-04-27
申请人： Santosh S. Basapur , Young S. Lee , Shirley A. Chaysinh , Hiren M. Mandalia , Ashley B. Novak , Narayanan Venkitaraman
发明人： Santosh S. Basapur , Young S. Lee , Shirley A. Chaysinh , Hiren M. Mandalia , Ashley B. Novak , Narayanan Venkitaraman
IPC分类号： G06F3/00 , H04N21/8547 , G06T11/20 , H04N5/775 , H04N21/431 , H04N21/475 , H04N21/658 , H04N21/81 , G06F3/01 , H04N21/25 , H04N21/258 , H04N21/2665
CPC分类号： H04N21/8547 , G06F2203/04104 , G06T11/206 , H04N5/775 , H04N21/251 , H04N21/25891 , H04N21/2665 , H04N21/4312 , H04N21/4756 , H04N21/6582 , H04N21/8133
摘要： Disclosed are methods and apparatus for displaying information relating to a portion of a multimedia presentation. A progress bar is provided and displayed. A length of the progress bar is representative of a duration of the multimedia presentation. A user selects a first and a second point in the multimedia presentation, thereby defining a portion of the presentation. Depending on the selection, one or more communications (e.g., comments, online postings, etc.) may be identified. Each of these communications may have been composed in relation to at least a point of the multimedia presentation that is within the defined portion. Information depending on those identified communications may then be displayed to the user.
摘要翻译：公开了用于显示与多媒体呈现的一部分有关的信息的方法和装置。提供并显示进度条。进度条的长度代表多媒体呈现的持续时间。用户选择多媒体呈现中的第一和第二点，由此定义呈现的一部分。根据选择，可以识别一个或多个通信（例如，注释，在线发布等）。这些通信中的每一个可以相对于在定义的部分内的多媒体呈现的至少一个点来组成。然后可以向用户显示取决于所识别的通信的信息。

2. 发明授权

US08706540B2 Task management in a workforce environment using an acoustic map constructed from aggregated audio 有权
标题翻译：使用由聚合音频构建的声学地图的劳动力环境中的任务管理
公开(公告)号：US08706540B2
公开(公告)日：2014-04-22
申请号：US12962782
申请日：2010-12-08
申请人： Pawitter Mangat , Timothy J. Collins , Young S. Lee
发明人： Pawitter Mangat , Timothy J. Collins , Young S. Lee
IPC分类号： G06Q10/00
CPC分类号： G06Q10/00 , G06Q10/06311 , G06Q30/00 , G06Q30/0241
摘要： Incoming audio from mobile devices can be centrally processed, where a server can filter background noise in real time, such as by using an XOR function. Instead of discarding the filtered noise, however, it can be processed in parallel to dynamically construct an acoustic map of the environment. The acoustic map can be generated from an aggregation of sound data from multiple devices positioned in a geographic environment. The acoustic map can be linked to a configurable set of rules, conditions, and events, which can cause dynamic adjustments to be made to a workforce task management system. For example, employee availability can be assessed using the acoustic map and workforce tasks can be assigned based in part upon this availability.
摘要翻译：可以集中处理来自移动设备的传入音频，其中服务器可以实时过滤背景噪声，例如使用XOR功能。然而，代替放弃滤波后的噪声，可以并行处理，以动态构建环境声学图。声学图可以从位于地理环境中的多个设备的声音数据的聚集生成。声学图可以链接到可配置的一组规则，条件和事件，这可以导致对劳动力任务管理系统进行动态调整。例如，可以使用声学图来评估员工的可用性，并且可以部分地基于这种可用性分配劳动力任务。

3. 发明授权

US08679983B2 Selective suppression of dry-etch rate of materials containing both silicon and nitrogen 失效
标题翻译：选择性抑制含有硅和氮的材料的干蚀刻速率
公开(公告)号：US08679983B2
公开(公告)日：2014-03-25
申请号：US13449441
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

4. 发明授权

US08679982B2 Selective suppression of dry-etch rate of materials containing both silicon and oxygen 有权
标题翻译：选择性抑制含有硅和氧的材料的干蚀刻速率
公开(公告)号：US08679982B2
公开(公告)日：2014-03-25
申请号：US13449543
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

5. 发明授权

US08497211B2 Integrated process modulation for PSG gapfill 失效
标题翻译：用于PSG填隙的集成过程调制
公开(公告)号：US08497211B2
公开(公告)日：2013-07-30
申请号：US13490426
申请日：2012-06-06
申请人： Young S. Lee , Anchuan Wang , Lan Chia Chan , Shankar Venkataraman
发明人： Young S. Lee , Anchuan Wang , Lan Chia Chan , Shankar Venkataraman
IPC分类号： H01L21/311
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02129 , H01L21/02274 , H01L21/0234 , H01L21/76224
摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.
摘要翻译：在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。此后，PSG膜的第一部分的一部分可被回蚀刻。回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度的PSG电影。

6. 发明授权

US08450191B2 Polysilicon films by HDP-CVD 失效
标题翻译：通过HDP-CVD制备多晶硅薄膜
公开(公告)号：US08450191B2
公开(公告)日：2013-05-28
申请号：US13089966
申请日：2011-04-19
申请人： Anchuan Wang , Xiaolin Chen , Young S. Lee
发明人： Anchuan Wang , Xiaolin Chen , Young S. Lee
IPC分类号： H01L21/20 , H01L21/3205
CPC分类号： H01L21/0262 , C23C16/0245 , C23C16/045 , C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/28556
摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.
摘要翻译：描述形成多晶硅层的方法。所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

7. 发明授权

US08414747B2 High-throughput HDP-CVD processes for advanced gapfill applications 有权
标题翻译：高通量HDP-CVD工艺，适用于先进的填缝应用
公开(公告)号：US08414747B2
公开(公告)日：2013-04-09
申请号：US11941263
申请日：2007-11-16
申请人： Bo Qi , Young S. Lee
发明人： Bo Qi , Young S. Lee
IPC分类号： C23C14/34
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/45523 , H01L21/02274 , H01L21/31612
摘要： Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio. A second high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a second deposition/sputter ratio. The second deposition/sputter ratio is less than the first deposition/sputter ratio. Each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.
摘要翻译：提供了在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。含硅气体，含氧气体和流动气体流入衬底处理室。流动气体的平均分子量小于5 amu。由含硅气体，含氧气体和流动气体形成第一高密度等离子体，以将第一部分氧化硅膜沉积在衬底上并且在间隙内，同时具有同时存在的第一沉积工艺具有由第一沉积/溅射比限定的相对贡献的沉积和溅射部件。由含硅气体，含氧气体和流动气体形成第二高密度等离子体，以将第二部分的氧化硅膜沉积在衬底上并在间隙内，同时具有同时存在的第二沉积工艺沉积和溅射组分具有由第二沉积/溅射比定义的相对贡献。第二沉积/溅射比小于第一沉积/溅射比。第一和第二沉积/溅射比率中的每一个被定义为净沉积速率和覆盖溅射速率之和与覆盖溅射速率的比率。

8. 发明申请

US20120150578A1 TASK MANAGEMENT IN A WORKFORCE ENVIRONMENT USING AN ACOUSTIC MAP CONSTRUCTED FROM AGGREGATED AUDIO 有权
标题翻译：使用从聚合音频构建的声学地图在工作环境中的任务管理
公开(公告)号：US20120150578A1
公开(公告)日：2012-06-14
申请号：US12962782
申请日：2010-12-08
申请人： Pawitter Mangat , Timothy J. Collins , Young S. Lee
发明人： Pawitter Mangat , Timothy J. Collins , Young S. Lee
IPC分类号： G06Q10/00 , H04B15/00 , G06Q30/00
CPC分类号： G06Q10/00 , G06Q10/06311 , G06Q30/00 , G06Q30/0241
摘要： Incoming audio from mobile devices can be centrally processed, where a server can filter background noise in real time, such as by using an XOR function. Instead of discarding the filtered noise, however, it can be processed in parallel to dynamically construct an acoustic map of the environment. The acoustic map can be generated from an aggregation of sound data from multiple devices positioned in a geographic environment. The acoustic map can be linked to a configurable set of rules, conditions, and events, which can cause dynamic adjustments to be made to a workforce task management system. For example, employee availability can be assessed using the acoustic map and workforce tasks can be assigned based in part upon this availability.
摘要翻译：可以集中处理来自移动设备的传入音频，其中服务器可以实时过滤背景噪声，例如使用XOR功能。然而，代替放弃滤波后的噪声，可以并行处理，以动态构建环境声学图。声学图可以从位于地理环境中的多个设备的声音数据的聚集生成。声学图可以链接到可配置的一组规则，条件和事件，这可以导致对劳动力任务管理系统进行动态调整。例如，可以使用声学图来评估员工的可用性，并且可以部分地基于这种可用性分配劳动力任务。

9. 发明授权

US07910491B2 Gapfill improvement with low etch rate dielectric liners 有权
标题翻译：利用低蚀刻速率的电介质衬垫进行改进
公开(公告)号：US07910491B2
公开(公告)日：2011-03-22
申请号：US12437256
申请日：2009-05-07
申请人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
发明人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , H01L21/02112 , H01L21/02247 , H01L21/02304 , H01L21/318
摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
摘要翻译：描述了填充沟槽的方法，并且包括在含氟蚀刻化学中沉积具有高比率的氧化硅与介电衬里蚀刻速率的介电衬垫。氧化硅沉积在沟槽内并蚀刻以重新打开或加宽沟槽顶部附近的间隙。电介质衬垫在蚀刻工艺期间保护下面的衬底，从而可以使间隙更宽。氧化硅再次沉积在沟槽内以基本上填充沟槽。

10. 发明授权

US07867921B2 Reduction of etch-rate drift in HDP processes 有权
标题翻译：降低HDP工艺中的蚀刻速率漂移
公开(公告)号：US07867921B2
公开(公告)日：2011-01-11
申请号：US12204503
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/045 , C23C16/4404 , C23C16/4405 , H01L21/02164 , H01L21/02274 , H01L21/31612
摘要： A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
摘要翻译：通过向处理室提供季节前体的流动来调节处理室。通过在处理室的顶部施加分配有大于70％的源功率的至少7500W的源功率，从季节前体形成高密度等离子体。使用高密度等离子体在一个点沉积具有至少5000埃的厚度的季节层。将多个基板中的每一个依次传送到处理室中以执行包括蚀刻的处理。在基板的顺序转印之间清洁处理室。

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