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1. 发明申请

US20130171757A1 ADVANCED PLATFORM FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS 审中-公开
标题翻译：用于封闭晶体硅太阳能电池的先进平台
公开(公告)号：US20130171757A1
公开(公告)日：2013-07-04
申请号：US13732662
申请日：2013-01-02
申请人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
发明人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/568 , C23C16/54 , H01L21/67115 , H01L21/67173 , H01L21/6776
摘要： The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
摘要翻译：本发明通常提供用于形成太阳能电池器件的一个或多个区域的高通量衬底处理系统。在处理系统的一种配置中，一个或多个太阳能电池钝化或电介质层被沉积并在包含在高通量衬底处理系统内的一个或多个处理室内进一步处理。处理室可以是例如等离子体增强化学气相沉积（PECVD）室，低压化学气相沉积（LPCVD）室，原子层沉积（ALD）室，物理气相沉积（PVD）或溅射室，热处理室（例如，RTA或RTO室），基板重新定向室（例如，翻转室）和/或其它类似的处理室。

2. 发明申请

US20110274836A1 REMOVAL OF TRAPPED SILICON WITH A CLEANING GAS 审中-公开
标题翻译：用清洁气体去除陷阱硅
公开(公告)号：US20110274836A1
公开(公告)日：2011-11-10
申请号：US12774318
申请日：2010-05-05
申请人： Dung Huu Le , James L'Heureux , Jeffrey S. Sullivan , Xiaoxiong Yuan
发明人： Dung Huu Le , James L'Heureux , Jeffrey S. Sullivan , Xiaoxiong Yuan
IPC分类号： C23C16/44 , B05C11/00 , B01J19/00
CPC分类号： C23C16/4402 , B01D45/02 , C23C16/24 , C23C16/45561
摘要： Embodiments of the present invention relate to apparatus and methods of preventing build-up of explosive material in vacuum forelines of deposition systems. A cleaning gas such as nitrogen trifluoride (NF3) may be introduced into a particulate collection device including a catchpot having a configuration comprising a sloped interior surface area that maximizes the amount of reactive silicon-containing particles that are exposed to and react with the cleaning gas stream to form silicon tetrafluoride (SiF4) and other non-reactive by-products. The degree of slope of the interior surface area may be based upon the angle of repose of the silicon-containing particles. The gaseous silicon tetrafluoride (SiF4) and other non-reactive by-products can flow out of the catchpot and into the exhaust stream towards a vacuum pump. The apparatus and method may also avoid accumulation of highly reactive and highly explosive particulates in catchpots.
摘要翻译：本发明的实施例涉及防止爆炸材料在沉积系统的真空前沿中积累的装置和方法。诸如三氟化氮（NF 3）的清洁气体可以被引入到包括捕集器的颗粒收集装置中，所述捕集器具有包括倾斜的内表面区域的结构，该倾斜的内表面区域使暴露于清洁气体和与清洁气体反应的反应性含硅颗粒的量最大化流形成四氟化硅（SiF4）和其他非反应性副产物。内表面积的斜率可以基于含硅颗粒的休止角度。气态四氟化硅（SiF 4）和其他非反应性副产物可以从捕集器流出并进入排气流朝向真空泵。该装置和方法还可以避免在捕集器中堆积高反应性和高度爆炸性的颗粒物。

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