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1. 发明授权

US06647918B1 Double slit-valve doors for plasma processing 失效
标题翻译：用于等离子体处理的双切口阀门
公开(公告)号：US06647918B1
公开(公告)日：2003-11-18
申请号：US09711191
申请日：2000-11-13
申请人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
发明人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
IPC分类号： C23C1600
CPC分类号： H01L21/67011 , H01J37/32458 , H01J2237/186 , Y10S156/916 , Y10S414/139
摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.
摘要翻译：在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

2. 发明授权

US07147719B2 Double slit-valve doors for plasma processing 有权
公开(公告)号：US07147719B2
公开(公告)日：2006-12-12
申请号：US10602491
申请日：2003-06-23
申请人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
发明人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67011 , H01J37/32458 , H01J2237/186 , Y10S156/916 , Y10S414/139
摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

3. 发明授权

US06192827B1 Double slit-valve doors for plasma processing 失效
标题翻译：用于等离子体处理的双缝阀门
公开(公告)号：US06192827B1
公开(公告)日：2001-02-27
申请号：US09111251
申请日：1998-07-03
申请人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
发明人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
IPC分类号： C23C1601
CPC分类号： H01L21/67011 , H01J37/32458 , H01J2237/186 , Y10S156/916 , Y10S414/139
摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.
摘要翻译：在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

4. 发明授权

US06797639B2 Dielectric etch chamber with expanded process window 失效
公开(公告)号：US06797639B2
公开(公告)日：2004-09-28
申请号：US10254969
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H01L2100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

5. 发明授权

US06863835B1 Magnetic barrier for plasma in chamber exhaust 失效
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06863835B1
公开(公告)日：2005-03-08
申请号：US09557990
申请日：2000-04-25
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/3065 , B44C1/22 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.
摘要翻译：一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内从到达排气泵。磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

6. 发明授权

US06773544B2 Magnetic barrier for plasma in chamber exhaust 有权
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06773544B2
公开(公告)日：2004-08-10
申请号：US09775173
申请日：2001-01-31
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
摘要翻译：本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出过程区域。一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

7. 发明授权

US06716302B2 Dielectric etch chamber with expanded process window 有权
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US06716302B2
公开(公告)日：2004-04-06
申请号：US10253496
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H05H100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

8. 发明授权

US06899111B2 Configurable single substrate wet-dry integrated cluster cleaner 失效
标题翻译：可配置单衬底湿干一体化清洁剂
公开(公告)号：US06899111B2
公开(公告)日：2005-05-31
申请号：US09999751
申请日：2001-10-31
申请人： Paul E. Luscher , James D. Carducci , Siamak Salimian , Michael D. Welch
发明人： Paul E. Luscher , James D. Carducci , Siamak Salimian , Michael D. Welch
IPC分类号： B08B3/04 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/67028 , Y10S134/902 , Y10S438/905
摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.
摘要翻译：本发明提供一种清洗基板的方法和装置。清洁室限定适于在其中容纳衬底的处理腔。在一个实施例中，清洁室包括具有限定在其中的处理空腔的室主体。衬底被布置在处理空腔中，而不通过伯努利效应和/或衬底上方和/或下方的流体垫接触其它腔室部件。流体相对于基底的径向线以一定角度流入处理空腔，以在清洁和干燥过程中引导和/或控制基底的旋转。

9. 发明授权

US06589361B2 Configurable single substrate wet-dry integrated cluster cleaner 失效
公开(公告)号：US06589361B2
公开(公告)日：2003-07-08
申请号：US09882132
申请日：2001-06-15
申请人： Paul E Luscher , James D Carducci , Siamak Salimian
发明人： Paul E Luscher , James D Carducci , Siamak Salimian
IPC分类号： B08B700
CPC分类号： H01L21/67017 , B08B3/04 , H01L21/67028 , Y10S134/902
摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes an upper plate, a lower plate and a gas manifold disposed there between. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce rotation of the substrate during a cleaning and drying process. A cleaning process involves flowing one or more fluids onto a surface of the substrate during its rotation. One-sided and two-sided cleaning and drying is provided.

10. 发明授权

US06822185B2 Temperature controlled dome-coil system for high power inductively coupled plasma systems 失效
标题翻译：用于高功率感应耦合等离子体系统的温度控制穹顶线圈系统
公开(公告)号：US06822185B2
公开(公告)日：2004-11-23
申请号：US10267711
申请日：2002-10-08
申请人： Michael Welch , Paul E. Luscher , Siamak Salimian , Rolf Guenther , Zhong Qiang Hua , Son Phi , Peter Loewenhardt
发明人： Michael Welch , Paul E. Luscher , Siamak Salimian , Rolf Guenther , Zhong Qiang Hua , Son Phi , Peter Loewenhardt
IPC分类号： B23K900
CPC分类号： H01L21/67248 , H01J37/32458 , H01J37/32522 , H01L21/67109
摘要： The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.
摘要翻译：半导体制造工具的等离子体室的温度通过各种技术单独地或组合地保持基本恒定。一种技术是提供等离子体室圆顶的外表面，其中多个翼片突出到上覆气流的高速区域，以便从腔室散发热量。覆盖在圆顶外露的外表面上的覆盖层限定的管道还可以具有突出的唇缘或翼型件，以将气流的高速分量置于外部圆顶表面和翅片内。其他技术包括采用高速风扇来控制气流循环，以及使用温度传感器通过处理器通风风扇来控制风扇速度，从而调节室温。

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