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1. 发明授权

US08329686B2 Isatin analogues and uses therefor 有权
标题翻译：靛红类似物及其用途
公开(公告)号：US08329686B2
公开(公告)日：2012-12-11
申请号：US11847330
申请日：2007-08-29
申请人： Robert H. Mach , Michael Welch , Wenhua Chu , Justin Rothfuss
发明人： Robert H. Mach , Michael Welch , Wenhua Chu , Justin Rothfuss
IPC分类号： A61K31/4439 , A61K31/404 , C07D401/14 , C07D403/12
CPC分类号： C07D403/14 , A61K51/0446 , A61K51/0455 , C07D403/12
摘要： Novel isatin analogues, including isatin analogues comprising Michael Acceptors (IMAs) are disclosed. Further disclosed are methods of synthesis of the isatin analogues, and uses of the analogues, including inhibition of caspase-3 and caspase-7, and in vivo imaging of apoptosis by Positron emission tomography (PET) or Single Photon Emission Computed Tomography (SPECT).
摘要翻译：公开了包括Michael受体（IMA）的靛红类似物的新型靛红类似物。进一步公开的是靛红类似物的合成方法，以及通过正电子发射断层扫描（PET）或单光子发射计算机断层扫描（SPECT）技术对胱天蛋白酶-3和半胱天冬酶-7的抑制以及细胞凋亡的体内成像的方法，。

2. 发明授权

US07906540B2 Non-nucleoside reverse transcriptase inhibitors 失效
标题翻译：非核苷逆转录酶抑制剂
公开(公告)号：US07906540B2
公开(公告)日：2011-03-15
申请号：US12079649
申请日：2008-03-28
申请人： Zachary Kevin Sweeney , Michael Welch
发明人： Zachary Kevin Sweeney , Michael Welch
IPC分类号： A61K31/4196 , C07D249/12
CPC分类号： C07D249/12
摘要： Compounds of formula I, wherein R1, R2, R3, R4, R5, X, Y, and Ar are as defined herein or pharmaceutically acceptable salts thereof, inhibit HIV-1 reverse transcriptase and afford a method for prevention and treatment of HIV-1 infections and the treatment of AIDS and/or ARC. The present invention also relates to compositions containing compounds of formula I useful for the prevention and treatment of HIV-1 infections and the treatment of AIDS and/or ARC.
摘要翻译：其中R1，R2，R3，R4，R5，X，Y和Ar如本文所定义的式I化合物或其药学上可接受的盐抑制HIV-1逆转录酶，并提供预防和治疗HIV-1的方法感染和治疗艾滋病和/或ARC。本发明还涉及含有用于预防和治疗HIV-1感染和治疗AIDS和/或ARC的式I化合物的组合物。

3. 发明申请

US20100278751A1 RADIOLABELED 2-AMINO-4-ALKYL-6-(HALOALKYL)PYRIDINE COMPOUNDS AND THEIR USE IN DIAGNOSTIC IMAGING 审中-公开
标题翻译：放射性2-氨基-4-烷基-6-（HALOALKYL）吡啶化合物及其在诊断成像中的应用
公开(公告)号：US20100278751A1
公开(公告)日：2010-11-04
申请号：US12771040
申请日：2010-04-30
申请人： Robert H. Mach , Dong Zhou , Michael Welch
发明人： Robert H. Mach , Dong Zhou , Michael Welch
IPC分类号： A61K49/04 , C07D401/04 , A61P43/00
CPC分类号： C07D213/73 , A61K51/0455
摘要： Radiolabeled 2-amino-4-alkyl-6-(haloalkyl)pyridine compounds are disclosed. In some aspects, the compounds bind to inducible nitric oxide synthase (iNOS) with high specificity. In some configurations, a compound comprising a radioisotope can be used for diagnostic imaging of iNOS distribution in a mammalian subject such as a human, using a scanning method such as positron emission tomography (PET scanning). Methods of synthesis of the compounds are also disclosed.
摘要翻译：公开了放射性标记的2-氨基-4-烷基-6-（卤代烷基）吡啶化合物。在一些方面，化合物以高特异性结合诱导型一氧化氮合酶（iNOS）。在一些配置中，包括放射性同位素的化合物可以用于使用诸如正电子发射断层摄影（PET扫描）的扫描方法在诸如人类的哺乳动物受试者中iNOS分布的诊断成像。还公开了合成方法。

4. 发明授权

US07299148B2 Methods and apparatus for low distortion parameter measurements 失效
标题翻译：用于低失真参数测量的方法和装置
公开(公告)号：US07299148B2
公开(公告)日：2007-11-20
申请号：US11177922
申请日：2005-07-08
申请人： Dean Hunt , Costas J. Spanos , Michael Welch , Kameshwar Poolla , Mason L. Freed
发明人： Dean Hunt , Costas J. Spanos , Michael Welch , Kameshwar Poolla , Mason L. Freed
IPC分类号： G01K1/12
CPC分类号： G01K1/18 , H05K1/147 , H05K1/148
摘要： This invention seeks to provide methods and apparatus that can improve the accuracy of measured parameter data used for processing workpieces. One aspect of the present invention includes methods of measuring process conditions with low distortion of the measurements caused by the measuring apparatus. The measurements include data for applications such as data for monitoring, controlling, and optimizing processes and process tools. Another aspect of the present invention includes apparatus for measuring substantially correct data for applications such as generating data for monitoring, controlling, and optimizing processes and process tools.
摘要翻译：本发明寻求提供可以提高用于处理工件的测量参数数据的精度的方法和装置。本发明的一个方面包括测量由测量装置引起的测量的低变形的工艺条件的方法。这些测量包括应用程序的数据，例如用于监视，控制和优化流程和流程工具的数据。本发明的另一方面包括用于测量用于诸如生成用于监控，控制和优化过程和处理工具的数据的应用的基本上正确的数据的装置。

5. 发明申请

US20070091535A1 TEMPERATURE CONTROLLED SEMICONDUCTOR PROCESSING CHAMBER LINER 审中-公开
标题翻译：温度控制半导体加工室内衬
公开(公告)号：US20070091535A1
公开(公告)日：2007-04-26
申请号：US11561112
申请日：2006-11-17
申请人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
发明人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
IPC分类号： H01H47/26 , H01H47/32 , H01H50/12
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4411 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01J2237/2001
摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
摘要翻译：一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

6. 发明申请

US20050201505A1 Enhanced separation process for (76Br, 77Br and 124I) preparation and recovery of each 审中-公开
标题翻译：（76Br，77Br和124I）的分离过程加强了每个的准备和回收
公开(公告)号：US20050201505A1
公开(公告)日：2005-09-15
申请号：US10913950
申请日：2004-08-07
申请人： Michael Welch , Lucie Tang , Douglas Rowland
发明人： Michael Welch , Lucie Tang , Douglas Rowland
IPC分类号： B01D20060101 , G21G1/06
CPC分类号： H05H6/00 , G21G1/10
摘要： An automated process for preparing and recovering 76Br, 77Br and 124I comprises (I) bombarding enriched 76 or 77Se or enriched 124Te with a beam of protons on a targeted disk respectively to produce 76Br, 77Br and 124I respectively wherein the target is selected from (a) a round tungsten disk with a depression at its center and (b) an inclined target having about a 20° inclination with respect to the beam direction and (II) recovering the 76Br, 77Br and 124I in an automated process comprising by placing the irradiated target face up in a quartz tube in the center of a high temperature furnace utilizing a target holder and heating the irradiated target sufficient to release and recover 76Br, 77Br and 124I therefrom.
摘要翻译：用于制备和回收76 Br，76 Br和124的自动化方法包括（I）轰击富集的76或77 / 在目标盘上分别具有一束质子束的SUP> Se或富集的124 Te，以产生76 Br Br，以及< 其目标选自（a）在其中心具有凹陷的圆形钨盘，（b）相对于光束方向具有大约20度倾斜的倾斜目标，（II）回收在自动化过程中包括通过将照射的目标物体朝上放置在石英管的中心位置的自动化过程中，将76 Br，77 Br和124 I 高温炉利用目标保持器并加热照射的靶足以释放并从其中回收和/或从其中回收和/或从其中回收。

7. 发明申请

US20050003675A1 Dielectric etch chamber with expanded process window 审中-公开
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US20050003675A1
公开(公告)日：2005-01-06
申请号：US10863590
申请日：2004-06-07
申请人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
发明人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768 , C23F1/00
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

8. 发明授权

US06671652B2 Clock skew measurement circuit on a microprocessor die 失效
标题翻译：微处理器芯片上的时钟偏移测量电路
公开(公告)号：US06671652B2
公开(公告)日：2003-12-30
申请号：US10036889
申请日：2001-12-26
申请人： Richard B. Watson, Jr. , Sean Michael Welch , Oscar Mendoza , David F. Bertucci
发明人： Richard B. Watson, Jr. , Sean Michael Welch , Oscar Mendoza , David F. Bertucci
IPC分类号： G04F100
CPC分类号： H03K5/19 , G01R31/31725 , G06F1/10 , H03K5/1534
摘要： A structure and related method for determining the uncertainty window associated with clock signals on a microprocessor using circuitry on the microprocessor die itself and external software. A target clock signal of interest is compared to a series of reference clock signals having the same frequency, but differing in phase relationship. Where the target clock signal makes state transitions with respect to the various reference clock signals over the course of several thousand comparisons is indicative of the uncertainty window for that target clock. By adjusting the phase relationship between the reference clock signals, and thereby adjusting the width of the time windows defined by corresponding features of the reference clock signals, the uncertainty window for the target clock signal may be iteratively determined.
摘要翻译：一种结构和相关方法，用于确定与使用微处理器上的电路的微处理器上的时钟信号相关联的不确定性窗口本身和外部软件。感兴趣的目标时钟信号与具有相同频率但相位关系不同的一系列参考时钟信号进行比较。在几千次比较的过程中，目标时钟信号相对于各种参考时钟信号进行状态转换的指示该目标时钟的不确定性窗口。通过调整参考时钟信号之间的相位关系，从而调整由参考时钟信号的相应特征定义的时间窗口的宽度，可以迭代地确定目标时钟信号的不确定性窗口。

9. 发明授权

US06267549B1 Dual independent robot blades with minimal offset 失效
标题翻译：双独立机器人刀片，最小偏移
公开(公告)号：US06267549B1
公开(公告)日：2001-07-31
申请号：US09088965
申请日：1998-06-02
申请人： William Brown , Michael Welch
发明人： William Brown , Michael Welch
IPC分类号： B25J1804
CPC分类号： B25J9/107 , H01L21/67742
摘要： A wafer handling robot system (10) operates in a wafer chamber (40) and comprises two independent robot blades, an upper blade (18) surmounting a lower blade (26). A pair of wafers (28, 32) are supported and positioned at the outer ends (78) of the upper and lower blades (18, 26). The upper robot blade (18) keeps an upper wafer (28) at a level just above the level at which the lower robot blade (26) keeps a lower wafer (32). Because the wafers are virtually at the same level, the same wafer lift mechanism can be used in the wafer chamber to lift and remove or replace the wafers on the two blades. By offsetting the height of the wafers by minimal amounts, the throughput of the system can be increased by up to a factor of two over a single robot blade system, particularly if the robot is the limiting factor on throughput. This throughput enhancement represents a substantial gain with a relatively simple and inexpensive addition to the equipment.
摘要翻译：晶片处理机器人系统（10）在晶片室（40）中操作并且包括两个独立的机器人刀片，上部刀片（18），其覆盖下部刀片（26）。一对晶片（28,32）被支撑并定位在上和下叶片（18,26）的外端（78）处。上部机器人刀片（18）将上部晶片（28）保持在刚好在下部机器人刀片（26）保持下部晶片（32）的水平面上方的水平面上。因为晶片实际上处于相同的水平，所以可以在晶片室中使用相同的晶片提升机构来提升和移除或更换两个叶片上的晶片。通过将晶片的高度最小化，通过单个机器人刀片系统可以将系统的吞吐量提高高达2倍，特别是如果机器人是吞吐量的限制因素。这种吞吐量增加代表了相当大的增益，相对简单和便宜的设备添加。

10. 发明授权

US6074514A High selectivity etch using an external plasma discharge 失效
公开(公告)号：US6074514A
公开(公告)日：2000-06-13
申请号：US20959
申请日：1998-02-09
申请人： Claes Bjorkman , Hongching Shan , Michael Welch
发明人： Claes Bjorkman , Hongching Shan , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F1/02
CPC分类号： H01J37/32871
摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

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