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1. 发明授权

US06899111B2 Configurable single substrate wet-dry integrated cluster cleaner 失效
标题翻译：可配置单衬底湿干一体化清洁剂
公开(公告)号：US06899111B2
公开(公告)日：2005-05-31
申请号：US09999751
申请日：2001-10-31
申请人： Paul E. Luscher , James D. Carducci , Siamak Salimian , Michael D. Welch
发明人： Paul E. Luscher , James D. Carducci , Siamak Salimian , Michael D. Welch
IPC分类号： B08B3/04 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/67028 , Y10S134/902 , Y10S438/905
摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.
摘要翻译：本发明提供一种清洗基板的方法和装置。清洁室限定适于在其中容纳衬底的处理腔。在一个实施例中，清洁室包括具有限定在其中的处理空腔的室主体。衬底被布置在处理空腔中，而不通过伯努利效应和/或衬底上方和/或下方的流体垫接触其它腔室部件。流体相对于基底的径向线以一定角度流入处理空腔，以在清洁和干燥过程中引导和/或控制基底的旋转。

2. 发明授权

US06647918B1 Double slit-valve doors for plasma processing 失效
标题翻译：用于等离子体处理的双切口阀门
公开(公告)号：US06647918B1
公开(公告)日：2003-11-18
申请号：US09711191
申请日：2000-11-13
申请人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
发明人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
IPC分类号： C23C1600
CPC分类号： H01L21/67011 , H01J37/32458 , H01J2237/186 , Y10S156/916 , Y10S414/139
摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.
摘要翻译：在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

3. 发明授权

US06863835B1 Magnetic barrier for plasma in chamber exhaust 失效
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06863835B1
公开(公告)日：2005-03-08
申请号：US09557990
申请日：2000-04-25
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/3065 , B44C1/22 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.
摘要翻译：一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内从到达排气泵。磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

4. 发明授权

US06773544B2 Magnetic barrier for plasma in chamber exhaust 有权
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06773544B2
公开(公告)日：2004-08-10
申请号：US09775173
申请日：2001-01-31
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
摘要翻译：本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出过程区域。一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

5. 发明授权

US07147719B2 Double slit-valve doors for plasma processing 有权
公开(公告)号：US07147719B2
公开(公告)日：2006-12-12
申请号：US10602491
申请日：2003-06-23
申请人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
发明人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67011 , H01J37/32458 , H01J2237/186 , Y10S156/916 , Y10S414/139
摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

6. 发明授权

US06192827B1 Double slit-valve doors for plasma processing 失效
标题翻译：用于等离子体处理的双缝阀门
公开(公告)号：US06192827B1
公开(公告)日：2001-02-27
申请号：US09111251
申请日：1998-07-03
申请人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
发明人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
IPC分类号： C23C1601
CPC分类号： H01L21/67011 , H01J37/32458 , H01J2237/186 , Y10S156/916 , Y10S414/139
摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.
摘要翻译：在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

7. 发明授权

US06221782B1 Adjusting DC bias voltage in plasma chamber 失效
公开(公告)号：US06221782B1
公开(公告)日：2001-04-24
申请号：US09287701
申请日：1999-04-06
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： H01L213065
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

8. 发明授权

US06513452B2 Adjusting DC bias voltage in plasma chamber 失效
标题翻译：调整等离子体室内的直流偏置电压
公开(公告)号：US06513452B2
公开(公告)日：2003-02-04
申请号：US09841804
申请日：2001-04-24
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： C23C1600
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译：一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

9. 发明授权

US06592673B2 Apparatus and method for detecting a presence or position of a substrate 失效
标题翻译：用于检测衬底的存在或位置的装置和方法
公开(公告)号：US06592673B2
公开(公告)日：2003-07-15
申请号：US09322102
申请日：1999-05-27
申请人： Michael D. Welch , Harald Herchen
发明人： Michael D. Welch , Harald Herchen
IPC分类号： B05C1100
CPC分类号： H01L21/67259
摘要： A chamber 25 comprises a support 45 for holding a substrate 20 and a sensor system 135 adapted to detect the presence or proper placement of the substrate 20 on the support 45. The support 45 comprises a window 155 that is transparent and adapted to transmit light therethrough. The sensor system 135 comprises a light source 140 adapted to direct a light beam 150 through the window 155 and a light sensor 160 in the path of the light beam 150. The light beam 150 is sensed by the light sensor 135 when the substrate 20 is properly positioned and the light beam 150 is blocked from the light sensor 135 when the substrate 20 is improperly positioned or vice versa. Preferably, the support 45 comprises an electrostatic chuck 55 adapted to electrostatically hold the substrate 20, the electrostatic chuck 55 comprising a window 155 composed of transparent material or a cut-out or a hole therein.
摘要翻译：腔室25包括用于保持衬底20的支撑件45和适于检测衬底20在支撑件45上的存在或适当放置的传感器系统135.支撑件45包括透明的窗口155，其适于透射光。传感器系统135包括适于将光束150引导通过窗口155的光源140和在光束150的路径中的光传感器160.当基底20是基底20时，光束150被光传感器135感测正确地定位，并且当基板20被不正确地定位时反射光束150并且光束150被阻挡在光传感器135上。优选地，支撑件45包括适于静电保持基板20的静电卡盘55，静电卡盘55包括由透明材料构成的窗口155或其中的切口或孔。

10. 发明授权

US06534417B2 Method and apparatus for etching photomasks 失效
公开(公告)号：US06534417B2
公开(公告)日：2003-03-18
申请号：US10126851
申请日：2002-04-19
申请人： Brigitte C. Stoehr , Michael D. Welch
发明人： Brigitte C. Stoehr , Michael D. Welch
IPC分类号： H01L2100
CPC分类号： H01J37/321 , G03F1/30 , H01J2237/334 , H01L21/31116
摘要： A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.

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