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1. 发明授权

US06192827B1 Double slit-valve doors for plasma processing 失效
标题翻译：用于等离子体处理的双缝阀门
公开(公告)号：US06192827B1
公开(公告)日：2001-02-27
申请号：US09111251
申请日：1998-07-03
申请人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
发明人： Michael D. Welch , Homgqing Shan , Paul E. Luscher , Evans Y. Lee , James D. Carducci , Siamak Salimian
IPC分类号： C23C1601
CPC分类号： H01L21/67011 , H01J37/32458 , H01J2237/186 , Y10S156/916 , Y10S414/139
摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.
摘要翻译：在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

2. 发明授权

US06254685B1 Chemical vapor deposition trap with tapered inlet 失效
标题翻译：具有锥形入口的化学气相沉积阱
公开(公告)号：US06254685B1
公开(公告)日：2001-07-03
申请号：US08181936
申请日：1994-01-18
申请人： Donald Kraft , Emmett M. Howard, Jr. , R. Scott Hibben
发明人： Donald Kraft , Emmett M. Howard, Jr. , R. Scott Hibben
IPC分类号： C23C1601
CPC分类号： C23C16/4412
摘要： A trap filter chamber (16) removes chemical by-products created during the manufacturing process of semiconductor wafers in a low pressure chemical vapor deposition reactor (12). A vapor containing the process by-products is discharged from the reactor to the trap chamber (16) by way of connecting pipe (14). The vapors are drawn through the trap chamber by a vacuum pump (20). The connecting pipe at the inlet of the trap chamber has a tapered diameter section (28, 30) such that its outlet is larger in diameter than its inlet. The tapered section gradually and linearly reduces the pressure from the reactor to the inlet of the trap filter chamber thereby substantially reducing particulate by-product build-up at the inlet to the trap filter caused by temperature-pressure related precipitation.
摘要翻译：捕集过滤器室（16）去除在低压化学气相沉积反应器（12）中在半导体晶片的制造过程中产生的化学副产物。含有过程副产物的蒸气通过连接管（14）从反应器排放到捕集室（16）。蒸汽通过真空泵（20）从捕集室中抽出。捕集器入口处的连接管具有锥形直径部分（28,30），使得其出口直径大于其入口。锥形部分逐渐和线性地减小从反应器到陷阱过滤器室的入口的压力，从而基本上减少由与温度有关的沉淀引起的陷阱过滤器入口处的颗粒副产物积聚。

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