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1. 发明授权

US06228663B1 Method of forming semiconductor devices using gate insulator thickness and channel length for controlling drive current strength 失效
标题翻译：使用栅极绝缘体厚度和沟道长度形成半导体器件以控制驱动电流强度的方法
公开(公告)号：US06228663B1
公开(公告)日：2001-05-08
申请号：US08994107
申请日：1997-12-19
申请人： Mark I. Gardner , H. Jim Fulford , Anthony J. Toprac
发明人： Mark I. Gardner , H. Jim Fulford , Anthony J. Toprac
IPC分类号： H01L21336
CPC分类号： H01L29/66575 , H01L21/28035 , H01L21/28167 , H01L21/28194 , H01L22/20 , H01L29/42364 , H01L29/42376 , Y10S148/162 , Y10S438/945
摘要： A semiconductor device having a controlled drive current strength is produced by varying gate electrode length to accommodate any variation in insulating layer thickness from a desired value. After formation of the gate insulating layer on a substrate, the thickness is measured and compared to a desired value. Based on any differences between the measured and desired values, the length of the gate electrode is determined in order to counteract the variation in gate insulating layer thickness. This results in a change in channel length that counteracts the effect of the variation in insulating layer thickness on the drive current strength. The present process permits close control over the drive current strength of semiconductor devices. This also can provide decreased variation within and between lots and corresponding increases in productivity.
摘要翻译：具有受控的驱动电流强度的半导体器件通过改变栅电极长度来产生，以适应绝缘层厚度的任何变化与期望值。在基板上形成栅极绝缘层之后，测量厚度并将其与期望值进行比较。基于测量值和期望值之间的任何差异，确定栅电极的长度以抵消栅极绝缘层厚度的变化。这导致沟道长度的改变，其抵消了绝缘层厚度变化对驱动电流强度的影响。本方法允许密切控制半导体器件的驱动电流强度。这也可以在批次之间和之间提供减小的变化，并且相应地提高生产率。

2. 发明授权

US6136616A Method of forming semiconductor devices using gate electrode dimensions and dopant concentration for controlling drive current strength 失效
标题翻译：使用栅极尺寸和掺杂剂浓度形成半导体器件以控制驱动电流强度的方法
公开(公告)号：US6136616A
公开(公告)日：2000-10-24
申请号：US22129
申请日：1998-02-11
申请人： H. Jim Fulford , Anthony J. Toprac , Randy Blair
发明人： H. Jim Fulford , Anthony J. Toprac , Randy Blair
IPC分类号： H01L21/265 , H01L21/336 , H01L21/66 , G01R31/26
CPC分类号： H01L29/6659 , H01L21/2652 , H01L22/20
摘要： A semiconductor device having a controlled drive current strength is produced by varying dopant concentration to accommodate any variation in channel length, which is affected by variations in gate electrode dimension(s) from a desired value. After formation of the gate electrode on a substrate, its dimension(s) is measured and compared to a desired value. Based on any differences between the measured and desired values, the concentration of dopant implanted into the substrate is determined in order to counteract the variation in gate electrode dimension. This results in a change in dopant concentration that counteracts the effect of the variation in gate electrode dimension on the drive current strength. The present process provides enhanced control over the drive current strength of semiconductor devices and provides decreased variation within and between lots and corresponding increases in productivity.
摘要翻译：具有受控的驱动电流强度的半导体器件通过改变掺杂剂浓度来产生，以适应沟道长度的任何变化，其受到期望值的栅电极尺寸的变化的影响。在基板上形成栅电极之后，测量其尺寸并将其与期望值进行比较。基于测量值和期望值之间的任何差异，确定注入到衬底中的掺杂剂的浓度以抵消栅电极尺寸的变化。这导致掺杂剂浓度的变化，其抵消了栅电极尺寸变化对驱动电流强度的影响。本方法提供对半导体器件的驱动电流强度的增强的控制，并且在批次之间和之间提供降低的变化并且相应地提高生产率。

3. 发明授权

US6110785A Formulation of high performance transistors using gate trim etch process 失效
标题翻译：使用栅极微调蚀刻工艺制备高性能晶体管
公开(公告)号：US6110785A
公开(公告)日：2000-08-29
申请号：US69533
申请日：1998-04-29
申请人： Thomas E. Spikes, Jr. , Mark I. Gardner , Anthony J. Toprac
发明人： Thomas E. Spikes, Jr. , Mark I. Gardner , Anthony J. Toprac
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/66575 , H01L29/7833
摘要： The present invention is directed to a new and improved technique for formation of metal oxide semiconductor field effect transistors. In particular, the method involves formation of an initial gate structure that is wider than the desired final channel length of the completed transistor. Thereafter, an initial heavy-doping step is applied to the drain and source regions of the device. The width of the gate structure is then patterned and etched back to the desired final channel length of the device. A second, light-doping LDD implant is performed to complete the source and drain regions of the finished device.
摘要翻译：本发明涉及用于形成金属氧化物半导体场效应晶体管的新的和改进的技术。特别地，该方法涉及形成比完成的晶体管的期望的最终沟道长度更宽的初始栅极结构。此后，将初始的重掺杂步骤施加到器件的漏极和源极区域。然后将栅极结构的宽度图案化并蚀刻回设备的期望的最终通道长度。执行第二个光掺杂LDD注入以完成成品器件的源极和漏极区域。

4. 发明授权

US07181354B1 Method and apparatus for data stackification for run-to-run control 有权
标题翻译：用于运行控制的数据堆叠的方法和装置
公开(公告)号：US07181354B1
公开(公告)日：2007-02-20
申请号：US10227753
申请日：2002-08-26
申请人： Christopher A. Bone , Anthony J. Toprac
发明人： Christopher A. Bone , Anthony J. Toprac
IPC分类号： G01N37/00
CPC分类号： G05B19/41865 , G05B2219/32053 , G05B2219/37532 , G05B2219/45031 , H01L21/67276 , Y02P90/20
摘要： A method and an apparatus for organizing production data is provided. The method comprises performing at least one process run of semiconductor devices, and recording at least one manufacturing tag associated with the process run of semiconductor devices. The method further comprises performing metrology upon at least one process run of the semiconductor device for acquiring metrology data and for performing a metrology data stackification process upon the metrology data using the manufacturing tag for organizing and stacking the metrology data. The method further comprises modifying at least one control parameter is modified based upon the stacked metrology data.
摘要翻译：提供了一种用于组织生产数据的方法和装置。该方法包括执行半导体器件的至少一个工艺流程，以及记录与半导体器件的工艺流程相关联的至少一个制造标签。该方法还包括在用于采集度量数据的半导体器件的至少一个工艺运行中执行度量，并且使用用于组织和堆叠度量数据的制造标签对度量数据进行计量数据叠加处理。该方法还包括修改至少一个控制参数根据堆叠的度量数据进行修改。

5. 发明授权

US06699727B1 Method for prioritizing production lots based on grade estimates and output requirements 有权
标题翻译：根据年龄估计和产出要求确定生产批次的方法
公开(公告)号：US06699727B1
公开(公告)日：2004-03-02
申请号：US09821675
申请日：2001-03-29
申请人： Anthony J. Toprac , Joyce S. Oey Hewett , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Anthony J. Toprac , Joyce S. Oey Hewett , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G01R3126
CPC分类号： H01L22/20 , G05B19/418 , G05B2219/32194 , G05B2219/32263 , Y02P90/02 , Y02P90/18 , Y02P90/20 , Y02P90/22
摘要： A method for prioritizing production flow includes processing a plurality of manufactured items in a process flow; measuring characteristics of a plurality of manufactured items in the process flow; estimating performance grades for the plurality of manufactured items based on the measured characteristics; grouping the manufactured items with like estimated performance grades; assigning priorities to groups of manufactured items with like estimated performance grades; and directing the plurality of manufactured items through the process flow based on the assigned priorities. A manufacturing system includes a plurality of processing tools adapted to process a plurality of manufactured items in a process flow, a metrology tool, and a process control server. The metrology tool is adapted to measure characteristics of a plurality of manufactured items in the process flow. The process control server is adapted to estimate performance grades for the plurality of manufactured items based on the measured characteristics, group the manufactured items with like estimated performance grades, assign priorities to groups of manufactured items with like estimated performance grades, and direct the plurality of manufactured items through the process flow based on the assigned priorities.
摘要翻译：一种用于确定生产流程优先级的方法包括在处理流程中处理多个制造的物品; 测量处理流程中的多个制成品的特性; 基于所测量的特性来估计所述多个制造物品的性能等级; 对具有相似估计性能等级的制成品进行分组; 将优先事项分配给具有类似估计绩效等级的制成品组; 以及基于所分配的优先级，通过所述处理流程来引导所述多个制造的物品。制造系统包括多个处理工具，其适用于处理流程中的多个制造物品，计量工具和过程控制服务器。计量工具适于测量处理流程中的多个制造物品的特性。过程控制服务器适于基于测量的特性来估计多个制造物品的性能等级，将具有相似估计性能等级的制造物品分组，将具有相似估计性能等级的制造商品组的优先级分配给多个基于分配的优先级，通过流程流程制造出的物品。

6. 发明授权

US06675058B1 Method and apparatus for controlling the flow of wafers through a process flow 有权
标题翻译：通过工艺流程控制晶片流动的方法和装置
公开(公告)号：US06675058B1
公开(公告)日：2004-01-06
申请号：US09821630
申请日：2001-03-29
申请人： Alexander J. Pasadyn , Anthony J. Toprac , Christopher A. Bode , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Alexander J. Pasadyn , Anthony J. Toprac , Christopher A. Bode , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/32272 , H01L21/67276 , Y02P90/18 , Y02P90/20 , Y02P90/86
摘要： A method for controlling the flow of wafers through a process flow includes monitoring operating states of a plurality of processing tools adapted to process wafers; measuring a characteristic of a particular incoming wafer; identifying a particular processing tool having an operating state complimentary to the measured characteristic; and routing the particular incoming wafer to the particular processing tool for processing. A manufacturing system includes a plurality of processing tools adapted to process wafers and a process control server. The process control server is adapted to access metrology data related to a characteristic of a particular incoming wafer, identify a particular processing tool having an operating state complimentary to the characteristic, and route the particular incoming wafer to the particular processing tool for processing.
摘要翻译：用于通过工艺流程控制晶片流动的方法包括监测适于处理晶片的多个处理工具的操作状态; 测量特定输入晶片的特性; 识别具有与测量特性相互补充的操作状态的特定加工工具; 并将特定进入的晶片路由到特定的处理工具进行处理。制造系统包括适于处理晶片的多个处理工具和过程控制服务器。过程控制服务器适于访问与特定输入晶片的特性相关的度量数据，识别具有与该特征相互补充的操作状态的特定处理工具，并将特定输入晶片路由到特定处理工具进行处理。

7. 发明授权

US06560506B2 Method and apparatus for control for semiconductor processing for reducing effects of environmental effects 失效
标题翻译：用于半导体处理的控制方法和装置，用于减少环境影响的影响
公开(公告)号：US06560506B2
公开(公告)日：2003-05-06
申请号：US09729412
申请日：2000-12-04
申请人： Anthony J. Toprac
发明人： Anthony J. Toprac
IPC分类号： G06F1900
CPC分类号： G05B19/41875 , G05B13/024 , G05B2219/32182 , G05B2219/32187 , G05B2219/45031 , H01L21/67276 , Y02P90/14 , Y02P90/22
摘要： The present invention provides for a method and an apparatus for reducing the effects of manufacturing environmental factors. At least one process run of semiconductor devices is processed. A manufacturing environmental data analysis is performed upon the process run of semiconductor devices. A control parameter modification sequence is implemented in response to the manufacturing environmental data analysis.
摘要翻译：本发明提供了减少制造环境因素的影响的方法和装置。处理半导体器件的至少一个工艺流程。在半导体器件的工艺运行中进行制造环境数据分析。响应于制造环境数据分析实施控制参数修改序列。

8. 发明授权

US06549822B1 Method and apparatus for control of multi-cup semiconductor manufacturing tracks 有权
标题翻译：用于控制多杯半导体制造轨道的方法和装置
公开(公告)号：US06549822B1
公开(公告)日：2003-04-15
申请号：US09625432
申请日：2000-07-25
申请人： Anthony J. Toprac
发明人： Anthony J. Toprac
IPC分类号： G06F1900
CPC分类号： H01L21/67276
摘要： The present invention provides for a method and an apparatus for controlling multiple semiconductor wafer cups. At least one process run of semiconductor devices is processed. A multi-wafer-cup process analysis is performed upon the processed semiconductor devices. At least one control parameter is modified for a subsequent process run of semiconductor devices using results from the multi-wafer-cup process analysis.
摘要翻译：本发明提供一种用于控制多个半导体晶片杯的方法和装置。处理半导体器件的至少一个工艺流程。对处理的半导体器件进行多晶圆杯处理分析。使用多晶圆杯过程分析的结果，修改至少一个控制参数用于半导体器件的后续处理运行。

9. 发明授权

US06511898B1 Method for controlling deposition parameters based on polysilicon grain size feedback 失效
标题翻译：基于多晶硅粒度反馈控制沉积参数的方法
公开(公告)号：US06511898B1
公开(公告)日：2003-01-28
申请号：US09577769
申请日：2000-05-24
申请人： Thomas Sonderman , Jeremy Lansford , Anthony J. Toprac
发明人： Thomas Sonderman , Jeremy Lansford , Anthony J. Toprac
IPC分类号： H01L2120
CPC分类号： H01L22/26 , H01L22/14
摘要： A processing line includes a deposition tool, a metrology tool and a controller. The deposition tool is adapted to form a polysilicon layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a grain size of the polysilicon layer. The controller is adapted to modify the recipe for subsequently formed polysilicon layers based on the measured grain size. A method for controlling a deposition process includes forming a polysilicon layer on a wafer in accordance with a recipe; measuring a grain size of the polysilicon layer; and changing the recipe for subsequently formed polysilicon layers based on the measured grain size.
摘要翻译：处理线包括沉积工具，计量工具和控制器。沉积工具适于根据配方在晶片上形成多晶硅层。测量工具适于测量多晶硅层的晶粒尺寸。控制器适于基于测量的晶粒尺寸修改随后形成的多晶硅层的配方。控制沉积工艺的方法包括根据配方在晶片上形成多晶硅层; 测量多晶硅层的晶粒尺寸; 并根据测得的晶粒尺寸改变随后形成的多晶硅层的配方。

10. 发明授权

US06470230B1 Supervisory method for determining optimal process targets based on product performance in microelectronic fabrication 有权
标题翻译：基于微电子制造中的产品性能确定最佳过程目标的监督方法
公开(公告)号：US06470230B1
公开(公告)日：2002-10-22
申请号：US09477464
申请日：2000-01-04
申请人： Anthony J. Toprac , Michael L. Miller , Thomas Sonderman
发明人： Anthony J. Toprac , Michael L. Miller , Thomas Sonderman
IPC分类号： G06F1900
CPC分类号： G03F7/70625 , G03F7/70633 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method is provided. for manufacturing, the method including processing a workpiece in a processing step, measuring a parameter characteristic of the processing performed on the workpiece in the processing step, and forming an output signal corresponding to the characteristic parameter measured. The method also includes setting a target value for the processing performed in the processing step based on the output signal.
摘要翻译：提供了一种方法。在制造中，所述方法包括在处理步骤中处理工件，测量在所述处理步骤中对所述工件执行的处理的参数特性，以及形成与所测量的特征参数对应的输出信号。该方法还包括基于输出信号设置在处理步骤中执行的处理的目标值。

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