专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08017411B2 Dynamic adaptive sampling rate for model prediction 有权
标题翻译：模型预测的动态自适应采样率
公开(公告)号：US08017411B2
公开(公告)日：2011-09-13
申请号：US10323530
申请日：2002-12-18
申请人： Thomas J. Sonderman , Alexander J. Pasadyn , Gregory A. Cherry
发明人： Thomas J. Sonderman , Alexander J. Pasadyn , Gregory A. Cherry
IPC分类号： H01L21/00
CPC分类号： H01L22/20 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method and an apparatus for dynamically adjusting a sampling rate relating to wafer examination. A process step is performed upon a plurality of workpieces associated with a lot. A sample rate for acquiring metrology data relating to at least one of the processed workpiece is determined. A dynamic sampling rate adjustment process is performed to adaptively modify the sample rate. The dynamic sampling rate adjustment process includes comparing a predicted process outcome and an actual process outcome and modifying the sampling rate based upon the comparison.
摘要翻译：一种用于动态调整与晶片检查相关的采样率的方法和装置。在与批次相关联的多个工件上执行处理步骤。确定用于获取与所处理的工件中的至少一个相关的度量数据的采样率。执行动态采样率调整过程以自适应地修改采样率。动态采样率调整过程包括比较预测过程结果和实际过程结果，并根据比较修改采样率。

2. 发明授权

US06978189B1 Matching data related to multiple metrology tools 有权
标题翻译：匹配与多个计量工具相关的数据
公开(公告)号：US06978189B1
公开(公告)日：2005-12-20
申请号：US10156450
申请日：2002-05-28
申请人： Christopher A. Bode , Matthew A. Purdy , Alexander J. Pasadyn
发明人： Christopher A. Bode , Matthew A. Purdy , Alexander J. Pasadyn
IPC分类号： G06F19/00 , H01L21/00
CPC分类号： H01L21/67288 , H01L21/67253
摘要： A method and an apparatus for matching data related to an integrated metrology tool and a standalone metrology tool. At least one semiconductor wafer is processed. An integrated metrology tool and/or a standalone metrology tool is matched based upon a difference between metrology data relating to a processed semiconductor wafer acquired by the integrated metrology tool and metrology data acquired by the standalone metrology tool, using a controller.
摘要翻译：一种用于匹配与综合计量工具相关的数据的方法和装置以及独立计量工具。至少一个半导体晶片被处理。基于与由综合计量工具获得的经处理的半导体晶片相关的度量数据与使用控制器由独立计量工具获取的度量数据之间的差异进行匹配的综合计量工具和/或独立计量工具。

3. 发明授权

US06917849B1 Method and apparatus for predicting electrical parameters using measured and predicted fabrication parameters 有权
标题翻译：使用测量和预测制造参数预测电气参数的方法和装置
公开(公告)号：US06917849B1
公开(公告)日：2005-07-12
申请号：US10323543
申请日：2002-12-18
申请人： Alexander J. Pasadyn , Thomas J. Sonderman
发明人： Alexander J. Pasadyn , Thomas J. Sonderman
IPC分类号： G06F19/00 , H01L21/66
CPC分类号： H01L22/20
摘要： A method includes collecting a first fabrication parameter associated with the processing of a selected semiconductor device. A second fabrication parameter is estimated for the selected semiconductor device. A first value for at least one electrical characteristic of the selected semiconductor device is predicted based on the collected first fabrication parameter and the estimated second fabrication parameter. A system includes a data collection unit and a prediction unit. The data collection unit is configured to collect a first fabrication parameter associated with the processing of a selected semiconductor device. The prediction unit is configured to estimate a second fabrication parameter for the selected semiconductor device and predict a first value for at least one electrical characteristic of the selected semiconductor device based on the collected first fabrication parameter and the estimated second fabrication parameter.
摘要翻译：一种方法包括收集与所选半导体器件的处理相关联的第一制造参数。对于所选择的半导体器件估计第二制造参数。基于收集的第一制造参数和估计的第二制造参数来预测所选择的半导体器件的至少一个电特性的第一值。系统包括数据收集单元和预测单元。数据收集单元被配置为收集与所选择的半导体器件的处理相关联的第一制造参数。预测单元被配置为基于所收集的第一制造参数和估计的第二制造参数来估计所选择的半导体器件的第二制造参数并且预测所选择的半导体器件的至少一个电特性的第一值。

4. 发明授权

US06912433B1 Determining a next tool state based on fault detection information 有权
标题翻译：根据故障检测信息确定下一个工具状态
公开(公告)号：US06912433B1
公开(公告)日：2005-06-28
申请号：US10323554
申请日：2002-12-18
申请人： Robert J. Chong , Michael L. Miller , Alexander J. Pasadyn , Eric O. Green
发明人： Robert J. Chong , Michael L. Miller , Alexander J. Pasadyn , Eric O. Green
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/45031 , G05B2219/50065 , Y02P90/22
摘要： A method and apparatus are provided for determining a next tool state based on fault detection information. The method comprises receiving operational data associated with processing of a workpiece by a processing tool, determining at least a portion of noise associated with the processing of the workpiece based on analyzing the operational data and estimating a next state of the processing tool based on at least the determined portion of the noise.
摘要翻译：提供了一种基于故障检测信息来确定下一个工具状态的方法和装置。该方法包括：通过处理工具接收与工件的处理有关的操作数据，基于分析操作数据确定与工件的处理相关联的噪声的至少一部分，并基于至少基于估计处理工具的下一个状态确定的噪声部分。

5. 发明授权

US06907369B1 Method and apparatus for modifying design constraints based on observed performance 失效
标题翻译：基于观察性能修改设计约束的方法和装置
公开(公告)号：US06907369B1
公开(公告)日：2005-06-14
申请号：US10425227
申请日：2003-05-02
申请人： Richard J. Markle , Robert J. Chong , Alexander J. Pasadyn
发明人： Richard J. Markle , Robert J. Chong , Alexander J. Pasadyn
IPC分类号： G05B19/418 , G06F17/50 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32018 , G05B2219/32101 , G05B2219/45026 , G06F17/5068 , Y02P90/22
摘要： A method for modifying design constraints based on observed performance includes measuring a characteristic of a plurality of devices manufactured in a process flow. A design constraint associated with the characteristic is defined. A performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint is generated. The design constraint is modified based on the performance metric. A manufacturing system includes a metrology tool and a design rule monitor. The metrology tool is configured to measure a characteristic of a plurality of devices manufactured in a process flow. The design rule monitor is configured to receive a design constraint associated with the characteristic, generate a performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint, and modify the design constraint based on the performance metric.
摘要翻译：基于观察到的性能来修改设计约束的方法包括测量在处理流程中制造的多个设备的特性。定义与特性相关的设计约束。产生与测量特性和设计约束相关的设备性能的性能指标。基于性能指标修改设计约束。制造系统包括计量工具和设计规则监视器。计量工具被配置为测量在处理流程中制造的多个装置的特性。设计规则监视器被配置为接收与特性相关联的设计约束，根据测量的特性和设计约束生成与设备的性能相关的性能度量，并且基于性能度量来修改设计约束。

6. 发明授权

US06788988B1 Method and apparatus using integrated metrology data for pre-process and post-process control 有权
标题翻译：使用集成度量数据进行预处理和后处理控制的方法和装置
公开(公告)号：US06788988B1
公开(公告)日：2004-09-07
申请号：US10023098
申请日：2001-12-17
申请人： Alexander J. Pasadyn , Christopher A. Bode
发明人： Alexander J. Pasadyn , Christopher A. Bode
IPC分类号： G06F1900
CPC分类号： G05B15/02 , H01L22/20 , H01L2223/54453
摘要： A method and an apparatus for acquiring pre-process and post-process integrated metrology data. A lot of semiconductor wafers is provided. A pre-process integrated metrology data acquisition from a first semiconductor wafer within the lot of semiconductor wafers is performed. A process operation on the first semiconductor wafer is performed at least partially during the process of acquiring pre-process metrology data from a second semiconductor wafer within the lot of semiconductor wafers. Post-process integrated metrology data is acquired from the first semiconductor wafer in response to processing of the first semiconductor wafer. The pre-process and the post-process metrology data is analyzed for evaluation of the process operation performed on the first semiconductor wafer.
摘要翻译：一种用于获取预处理和后处理综合度量数据的方法和装置。提供了许多半导体晶片。执行在许多半导体晶片内的第一半导体晶片的预处理集成度量数据采集。在从多个半导体晶片的第二半导体晶片获取预处理测量数据的过程中，至少部分地执行在第一半导体晶片上的处理操作。响应于第一半导体晶片的处理，从第一半导体晶片获取后处理集成度量数据。分析预处理和后处理计量数据以评估在第一半导体晶片上执行的处理操作。

7. 发明授权

US06778873B1 Identifying a cause of a fault based on a process controller output 失效
标题翻译：根据过程控制器输出识别出故障的原因
公开(公告)号：US06778873B1
公开(公告)日：2004-08-17
申请号：US10210640
申请日：2002-07-31
申请人： Jin Wang , Elfido Coss, Jr. , Brian K. Cusson , Alexander J. Pasadyn , Michael L. Miller , Naomi M. Jenkins , Christopher A. Bode
发明人： Jin Wang , Elfido Coss, Jr. , Brian K. Cusson , Alexander J. Pasadyn , Michael L. Miller , Naomi M. Jenkins , Christopher A. Bode
IPC分类号： G06F1900
CPC分类号： G05B19/4184 , G05B23/0281 , G05B2219/31357 , G05B2219/31363 , G05B2219/32201 , Y02P90/14 , Y02P90/22
摘要： A method and apparatus is provided for identifying a cause of a fault based on controller output. The method comprises processing at least one workpiece under a direction of the controller and detecting a fault associated with the processing of the at least one workpiece. The method further includes determining a plurality of possible causes of the detected fault, identifying a more likely possible cause out of the plurality of possible causes, providing fault information associated with the identified more likely possible cause to the controller. The method further includes providing fault information associated with the identified more likely possible cause to the controller. The method further comprises adjusting the processing of one or more workpieces to be processed next based on the fault information provided to the controller. The method further includes generating prediction data associated with processing of the next workpieces, and comparing the prediction data to processing data associated with the processing of the next workpieces to identify a possible cause of the fault.
摘要翻译：提供了一种基于控制器输出来识别故障原因的方法和装置。该方法包括在控制器的方向上处理至少一个工件，并检测与至少一个工件的处理相关的故障。该方法还包括确定检测到的故障的多个可能的原因，从多个可能的原因中识别更可能的可能原因，将与所识别的更可能的可能原因相关联的故障信息提供给控制器。该方法还包括向控制器提供与所识别的更可能的可能原因相关联的故障信息。该方法还包括基于提供给控制器的故障信息来调整接下来要处理的一个或多个待处理工件的处理。该方法还包括生成与下一个工件的处理相关联的预测数据，以及将预测数据与与下一个工件的处理相关联的处理数据进行比较，以识别故障的可能原因。

8. 发明授权

US06756243B2 Method and apparatus for cascade control using integrated metrology 有权
标题翻译：使用综合计量的级联控制的方法和装置
公开(公告)号：US06756243B2
公开(公告)日：2004-06-29
申请号：US10020551
申请日：2001-10-30
申请人： Alexander J. Pasadyn , Christopher A. Bode
发明人： Alexander J. Pasadyn , Christopher A. Bode
IPC分类号： H01L2166
CPC分类号： H01L22/20 , H01L2223/54453 , Y10T29/41
摘要： A method and an apparatus for performing cascade control of processing of semiconductor wafers. A first semiconductor wafer for processing is received. A second semiconductor wafer for processing is received. A cascade processing operation upon the first and the second semiconductor wafers is performed, wherein the cascade processing operation comprises acquiring pre-process metrology data related to the second semiconductor wafer during at least a portion of a time period wherein the first semiconductor wafer is being processed.
摘要翻译：一种用于对半导体晶片的处理进行级联控制的方法和装置。接收用于处理的第一半导体晶片。接收用于处理的第二半导体晶片。执行在第一和第二半导体晶片上的级联处理操作，其中级联处理操作包括在其中正在处理第一半导体晶片的时间段的至少一部分期间获取与第二半导体晶片相关的预处理测量数据。

9. 发明授权

US06751518B1 Dynamic process state adjustment of a processing tool to reduce non-uniformity 有权
标题翻译：动态过程状态调整的加工工具减少不均匀性
公开(公告)号：US06751518B1
公开(公告)日：2004-06-15
申请号：US10134244
申请日：2002-04-29
申请人： Thomas J. Sonderman , Alexander J. Pasadyn , Christopher A. Bode
发明人： Thomas J. Sonderman , Alexander J. Pasadyn , Christopher A. Bode
IPC分类号： G06F1900
CPC分类号： H01L21/67276
摘要： A method and an apparatus for reducing process non-uniformity across a processed semiconductor wafers. A first semiconductor wafer is processed. A process non-uniformity associated with the first processed semiconductor wafer is identified. A feedback correction in response to the process non-uniformity during processing of a second semiconductor wafer is performed and/or a feed-forward compensation is performed in response to the process non-uniformity during a subsequent process performed across the first semiconductor wafer is performed.
摘要翻译：一种用于减少经处理的半导体晶片的工艺不均匀性的方法和装置。处理第一半导体晶片。识别与第一处理的半导体晶片相关联的工艺不均匀。执行响应于处理第二半导体晶片期间的处理不均匀性的反馈校正和/或响应于在第一半导体晶片执行的后续处理期间的处理不均匀性执行前馈补偿。

10. 发明授权

US06632692B1 Automated method of controlling critical dimensions of features by controlling stepper exposure dose, and system for accomplishing same 有权
标题翻译：通过控制步进曝光剂量控制特征的关键尺寸的自动化方法，以及完成相同的系统
公开(公告)号：US06632692B1
公开(公告)日：2003-10-14
申请号：US09758765
申请日：2001-01-11
申请人： Joyce S. Oey Hewett , Alexander J Pasadyn , Anthony J. Toprac
发明人： Joyce S. Oey Hewett , Alexander J Pasadyn , Anthony J. Toprac
IPC分类号： H01L2166
CPC分类号： G03F7/70558 , G03F7/70625
摘要： The present invention is directed to an automated method of controlling critical dimensions of features by controlling the stepper exposure dose, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension (FICD) of a plurality of features formed in a process layer, and providing the measured critical dimensions of the features to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer. In another embodiment, the method comprises measuring a critical dimension (DICD) of a plurality of features formed in a patterned layer of photoresist, providing the measured critical dimensions of the features in the patterned layer of photoresist to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer. In some embodiments, both the FICD measurements and the DICD measurements are used to determine the exposure dose.
摘要翻译：本发明涉及通过控制步进曝光剂量来控制特征的关键尺寸的自动化方法，以及用于实现其的系统。在一个实施例中，该方法包括测量在处理层中形成的多个特征的临界尺寸（FICD），以及将特征的测量临界尺寸提供给控制器，所述控制器基于所测量的临界尺寸确定曝光剂量在至少一个随后处理的晶片上进行曝光处理。在另一个实施例中，该方法包括测量在光致抗蚀剂的图案化层中形成的多个特征的临界尺寸（DICD），将光刻胶图案化层中的特征的测量临界尺寸提供给控制器，该控制器基于测量的临界尺寸，对至少一个随后处理的晶片进行曝光处理的曝光剂量。在一些实施例中，FICD测量和DICD测量都用于确定曝光剂量

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式