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1. 发明申请

US20070026149A1 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US20070026149A1
公开(公告)日：2007-02-01
申请号：US11494735
申请日：2006-07-28
申请人： Takashi Shimizu , Kazuo Saki , Kazuhiro Nishiki , Akihito Yamamoto , Shinji Mori
发明人： Takashi Shimizu , Kazuo Saki , Kazuhiro Nishiki , Akihito Yamamoto , Shinji Mori
IPC分类号： C23C16/00
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/3144 , H01L22/20
摘要： In a process of annealing an insulating film such as a silicon oxide film (SiO2) or a silicon oxynitride film (SiON) provided in a processing chamber 6 within an atmosphere of an inert gas 2 guided from a first mass flow controller 3 via a gas inlet 7, an amount of SiO sublimated from the surface of the insulating film in the processing chamber 6 is measured by a mass spectrometer 10, and an amount of oxygen gas 4 guided to the processing chamber 6 from a second mass flow controller 5 is controlled by a controller 1 so that the SiO concentration does not exceed a predetermined level, thereby effectively controlling the SiO sublimation. As a result, the film deterioration caused by the SiO sublimation is prevented and an insulating film having a high reliability and good characteristics can be formed in a controllable manner.
摘要翻译：在将惰性气体2的气氛2中引导的处理室6中设置的氧化硅膜（SiO 2/2）或氧氮化硅膜（SiON）等绝缘膜退火的工序中，通过气体入口7的第一质量流量控制器3，通过质谱仪10测量从处理室6中的绝缘膜的表面升华的SiO的量，并且从处理室6中引导到处理室6的量的氧气第二质量流量控制器5由控制器1控制，使得SiO浓度不超过预定水平，从而有效地控制SiO升华。结果，防止了由SiO升华引起的膜劣化，并且可以以可控的方式形成具有高可靠性和良好特性的绝缘膜。

2. 发明申请

US20050202686A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050202686A1
公开(公告)日：2005-09-15
申请号：US10884987
申请日：2004-07-07
申请人： Kazuo Saki , Shinji Mori , Takashi Shimizu
发明人： Kazuo Saki , Shinji Mori , Takashi Shimizu
IPC分类号： H01L21/76 , H01L21/302 , H01L21/31 , H01L21/318 , H01L21/3205 , H01L21/322 , H01L21/336 , H01L29/78
CPC分类号： H01L29/78 , H01L21/0214 , H01L21/02164 , H01L21/02332 , H01L21/02337 , H01L21/2254 , H01L21/28176 , H01L21/3105 , H01L21/823418 , H01L21/823462 , H01L21/823481
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention comprises forming a semiconductor element on a semiconductor substrate, forming a silicon oxide film containing nitrogen on the semiconductor element and injecting heavy hydrogen into the silicon oxide film containing nitrogen.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底上形成半导体元件，在半导体元件上形成含有氮的氧化硅膜，并将重氢注入到含氮的氧化硅膜中。

3. 发明授权

US07700156B2 Method and apparatus for forming silicon oxide film 失效
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US07700156B2
公开(公告)日：2010-04-20
申请号：US10879034
申请日：2004-06-30
申请人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
发明人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
IPC分类号： C23C16/00 , C23C14/10 , C23C16/40
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
摘要翻译：在形成氧化硅膜的方法中，将表面上具有硅层的目标基板装载到反应容器内的处理区域中，同时将处理区域设定为负载温度为400℃以下。然后，将装载目标基板的处理区域从加载温度加热到650℃以上的处理温度。在处理区域的加热期间，将水蒸汽供应到反应容器中，同时将水蒸汽设置为在处理区域的气氛中具有第一浓度，并将处理区域设定为具有第一减压。在将处理区域加热到处理温度之后，将氧化气体供应到反应容器中，从而氧化硅层以形成氧化硅膜。

4. 发明申请

US20050056220A1 Method and apparatus for forming silicon oxide film 失效
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US20050056220A1
公开(公告)日：2005-03-17
申请号：US10879034
申请日：2004-06-30
申请人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
发明人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
IPC分类号： H01L21/316 , C23C16/00 , H01L21/00 , H01L21/205 , H01L21/31
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
摘要翻译：在形成氧化硅膜的方法中，将表面上具有硅层的目标基板装载到反应容器内的处理区域中，同时将处理区域设定为负载温度为400℃以下。然后，将装载目标基板的处理区域从加载温度加热到650℃以上的处理温度。在处理区域的加热期间，将水蒸汽供应到反应容器中，同时将水蒸汽设置为在处理区域的气氛中具有第一浓度，并将处理区域设定为具有第一减压。在将处理区域加热到处理温度之后，将氧化气体供应到反应容器中，从而氧化硅层以形成氧化硅膜。

5. 发明申请

US20070062802A1 System and method for managing a plasma process and method for manufacturing an electronic device 审中-公开
标题翻译：用于管理等离子体处理的系统和方法以及用于制造电子设备的方法
公开(公告)号：US20070062802A1
公开(公告)日：2007-03-22
申请号：US11516773
申请日：2006-09-07
申请人： Katsuyuki Sekine , Shinji Mori , Takashi Shimizu
发明人： Katsuyuki Sekine , Shinji Mori , Takashi Shimizu
IPC分类号： H05F3/00 , C23C14/00 , C25B11/00 , C25B13/00 , C25B9/00
CPC分类号： H01J37/32183 , H01J37/32935
摘要： A system for managing a plasma processing apparatus includes an impedance matching tool for matching impedance in a transmission line feeding a high frequency wave generating a plasma into a processing chamber; a collection unit collecting time series data of an adjustment parameter of the impedance matching tool; a reference creation module creating management reference data by reference time series data of the adjustment parameter, the reference time series data collected from a reference plasma process against a reference substrate; an initialization module initializing the adjustment parameter for a target plasma process against a target substrate; a recording module recording target time series data of the adjustment parameter adjusted so as to minimize a reflection wave of the high frequency wave in the target plasma process; and a determination module determining an abnormality of the target plasma process by comparing the target time series data with the management reference data.
摘要翻译：用于管理等离子体处理装置的系统包括阻抗匹配工具，用于将产生等离子体的高频波馈送到处理室的传输线中的阻抗匹配; 收集单元，收集阻抗匹配工具的调整参数的时间序列数据; 参考创建模块，通过调整参数的参考时间序列数据创建管理参考数据，从参考等离子体处理相对于参考基板收集的参考时间序列数据; 初始化模块将目标等离子体处理的调整参数初始化为目标衬底; 记录模块记录调整参数的目标时间序列数据，以便在目标等离子体处理中使高频波的反射波最小化; 以及确定模块，通过将目标时间序列数据与管理参考数据进行比较来确定目标等离子体处理的异常。

6. 发明授权

US08624316B2 Nonvolatile semiconductor memory device and method of fabricating the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08624316B2
公开(公告)日：2014-01-07
申请号：US13227882
申请日：2011-09-08
申请人： Ichiro Mizushima , Yoshiaki Fukuzumi , Shinji Mori
发明人： Ichiro Mizushima , Yoshiaki Fukuzumi , Shinji Mori
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/11582 , H01L29/42352
摘要： According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.
摘要翻译：根据一个实施例，一种半导体器件，包括衬底，在衬底上方设置的层叠体，堆叠层体彼此交替堆叠绝缘体和电极膜，含有氟的硅柱，穿透硅柱的硅柱，设置在堆叠层体上的隧道绝缘体，设置在与层叠体主体相对的硅柱的表面上的隧道绝缘体，设置在隧道绝缘体的面向堆叠层主体的表面上的电荷存储层，面向堆叠层体的电荷存储层的表面，块绝缘体与电极膜接触，以及设置在硅柱中的嵌入部。

7. 发明授权

US08476708B2 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration 有权
标题翻译：具有形成在具有不同锗浓度的单晶半导体层上的电路的半导体存储器件
公开(公告)号：US08476708B2
公开(公告)日：2013-07-02
申请号：US13346888
申请日：2012-01-10
申请人： Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
发明人： Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/792
CPC分类号： H01L27/11582 , H01L27/0688 , H01L27/11573 , H01L27/11578 , H01L27/1207
摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion.The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.
摘要翻译：根据一个实施例，半导体存储器件包括半导体衬底，存储单元阵列部分，单晶半导体层和电路部分。存储单元阵列部分形成在半导体衬底上，并且包括存储单元。半导体层形成在存储单元阵列部分上，并且通过形成在延伸穿过存储单元阵列部分的孔中而连接到半导体衬底。电路部分形成在半导体层上。半导体层的下部的Ge浓度高于半导体层的上部的Ge浓度。

8. 发明授权

US08415242B2 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
公开(公告)号：US08415242B2
公开(公告)日：2013-04-09
申请号：US12886135
申请日：2010-09-20
申请人： Ichiro Mizushima , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
发明人： Ichiro Mizushima , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
IPC分类号： H01L21/3205
CPC分类号： H01L29/792 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.

9. 发明授权

US08307935B2 Vehicle pop up hood apparatus 有权
标题翻译：车辆弹出式发动机罩
公开(公告)号：US08307935B2
公开(公告)日：2012-11-13
申请号：US12864365
申请日：2009-01-22
申请人： Hiroyuki Takahashi , Hitoshi Yuasa , Yukio Nakagawa , Kazuyuki Yoshiyama , Shigeyuki Suzuki , Takeki Hayashi , Hajime Kitte , Masashi Aoki , Toshikatsu Togawa , Toshinobu Tsuboi , Shinji Mori
发明人： Hiroyuki Takahashi , Hitoshi Yuasa , Yukio Nakagawa , Kazuyuki Yoshiyama , Shigeyuki Suzuki , Takeki Hayashi , Hajime Kitte , Masashi Aoki , Toshikatsu Togawa , Toshinobu Tsuboi , Shinji Mori
IPC分类号： B60R21/34
CPC分类号： B60R21/38 , B60R2021/343 , B62D25/12
摘要： In a vehicle pop-up hood apparatus in which a rod is extended and a hood is pushed up by the operation of an actuator at a time of collision with a collision body, collision energy is absorbed with high efficiency when a collision load of a predetermined value or greater is input to an area near a hood pushed up position.Actuator (18) operates such that rod (20) moves in an axial direction toward a hood upper side, pushes up a rear edge side of hood rocker (12) and holds it at that position and, in that state, when a collision load of a predetermined value or greater acts from a hood upper side to near the pushed up position of the hood, push portion (54) slides along pushed up surface (38) of hinge arm (30) towards a vehicle rear side, and rod (20) is made to bend in conjunction therewith.
摘要翻译：在与碰撞体碰撞时通过致动器的操作而使杆伸长并且将发动机罩向上推动的车辆弹出式发动机罩中，当预定的碰撞载荷发生碰撞时，碰撞能量被高效地吸收值或更大值被输入到靠近发动机罩推动位置的区域。致动器（18）的操作使得杆（20）沿轴向朝向发动机罩上侧移动，将发动机摇臂（12）的后边缘侧推起并将其保持在该位置，并且在该状态下，当碰撞载荷预定值以上的动作从发动机罩上侧到靠近罩的上推位置，推动部（54）沿铰链臂（30）的推压面（38）朝向车辆后方滑动，并且杆 20）与其一起弯曲。

10. 发明申请

US20110233646A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110233646A1
公开(公告)日：2011-09-29
申请号：US12886135
申请日：2010-09-20
申请人： Ichiro MIZUSHIMA , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
发明人： Ichiro MIZUSHIMA , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/792 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.
摘要翻译：根据一个实施例，提供了一种非易失性半导体存储器件，其中通过在柱状半导体膜的高度方向上经由电荷存储层提供在柱状半导体膜的侧面上具有栅电极膜的多个晶体管形成的存储器串，基本上垂直地以矩阵形式布置在基底上。提供了一种由半导体材料制成的耦合部分，其连接形成在预定方向上彼此相邻的一对存储器串的柱状半导体膜的下部。每个柱状半导体膜由大致单晶状锗膜或硅锗膜形成。

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