专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08624316B2 Nonvolatile semiconductor memory device and method of fabricating the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08624316B2
公开(公告)日：2014-01-07
申请号：US13227882
申请日：2011-09-08
申请人： Ichiro Mizushima , Yoshiaki Fukuzumi , Shinji Mori
发明人： Ichiro Mizushima , Yoshiaki Fukuzumi , Shinji Mori
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/11582 , H01L29/42352
摘要： According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.
摘要翻译：根据一个实施例，一种半导体器件，包括衬底，在衬底上方设置的层叠体，堆叠层体彼此交替堆叠绝缘体和电极膜，含有氟的硅柱，穿透硅柱的硅柱，设置在堆叠层体上的隧道绝缘体，设置在与层叠体主体相对的硅柱的表面上的隧道绝缘体，设置在隧道绝缘体的面向堆叠层主体的表面上的电荷存储层，面向堆叠层体的电荷存储层的表面，块绝缘体与电极膜接触，以及设置在硅柱中的嵌入部。

2. 发明授权

US08476708B2 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration 有权
标题翻译：具有形成在具有不同锗浓度的单晶半导体层上的电路的半导体存储器件
公开(公告)号：US08476708B2
公开(公告)日：2013-07-02
申请号：US13346888
申请日：2012-01-10
申请人： Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
发明人： Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/792
CPC分类号： H01L27/11582 , H01L27/0688 , H01L27/11573 , H01L27/11578 , H01L27/1207
摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion.The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.
摘要翻译：根据一个实施例，半导体存储器件包括半导体衬底，存储单元阵列部分，单晶半导体层和电路部分。存储单元阵列部分形成在半导体衬底上，并且包括存储单元。半导体层形成在存储单元阵列部分上，并且通过形成在延伸穿过存储单元阵列部分的孔中而连接到半导体衬底。电路部分形成在半导体层上。半导体层的下部的Ge浓度高于半导体层的上部的Ge浓度。

3. 发明授权

US08415242B2 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
公开(公告)号：US08415242B2
公开(公告)日：2013-04-09
申请号：US12886135
申请日：2010-09-20
申请人： Ichiro Mizushima , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
发明人： Ichiro Mizushima , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
IPC分类号： H01L21/3205
CPC分类号： H01L29/792 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.

4. 发明申请

US20110233646A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110233646A1
公开(公告)日：2011-09-29
申请号：US12886135
申请日：2010-09-20
申请人： Ichiro MIZUSHIMA , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
发明人： Ichiro MIZUSHIMA , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/792 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.
摘要翻译：根据一个实施例，提供了一种非易失性半导体存储器件，其中通过在柱状半导体膜的高度方向上经由电荷存储层提供在柱状半导体膜的侧面上具有栅电极膜的多个晶体管形成的存储器串，基本上垂直地以矩阵形式布置在基底上。提供了一种由半导体材料制成的耦合部分，其连接形成在预定方向上彼此相邻的一对存储器串的柱状半导体膜的下部。每个柱状半导体膜由大致单晶状锗膜或硅锗膜形成。

5. 发明申请

US20120241841A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20120241841A1
公开(公告)日：2012-09-27
申请号：US13227882
申请日：2011-09-08
申请人： Ichiro Mizushima , Yoshiaki Fukuzumi , Shinji Mori
发明人： Ichiro Mizushima , Yoshiaki Fukuzumi , Shinji Mori
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L21/28282 , H01L27/11582 , H01L29/42352
摘要： According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.
摘要翻译：根据一个实施例，一种半导体器件，包括衬底，在衬底上方设置的层叠体，堆叠层体彼此交替堆叠绝缘体和电极膜，含有氟的硅柱，穿透硅柱的硅柱，设置在堆叠层体上的隧道绝缘体，设置在与层叠体主体相对的硅柱的表面上的隧道绝缘体，设置在隧道绝缘体的面向堆叠层主体的表面上的电荷存储层，面向堆叠层体的电荷存储层的表面，块绝缘体与电极膜接触，以及设置在硅柱中的嵌入部。

6. 发明申请

US20120181602A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20120181602A1
公开(公告)日：2012-07-19
申请号：US13346888
申请日：2012-01-10
申请人： Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
发明人： Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L27/11582 , H01L27/0688 , H01L27/11573 , H01L27/11578 , H01L27/1207
摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion.The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.
摘要翻译：根据一个实施例，半导体存储器件包括半导体衬底，存储单元阵列部分，单晶半导体层和电路部分。存储单元阵列部分形成在半导体衬底上，并且包括存储单元。半导体层形成在存储单元阵列部分上，并且通过形成在延伸穿过存储单元阵列部分的孔中而连接到半导体衬底。电路部分形成在半导体层上。半导体层的下部的Ge浓度高于半导体层的上部的Ge浓度。

7. 发明授权

US09229161B2 Waveguide and integrated circuit 有权
标题翻译：波导和集成电路
公开(公告)号：US09229161B2
公开(公告)日：2016-01-05
申请号：US13729922
申请日：2012-12-28
申请人： Kenji Todori , Yoshiaki Fukuzumi , Hideaki Aochi , Tsukasa Tada , Ko Yamada , Shigehiko Mori , Naomi Shida , Reiko Yoshimura
发明人： Kenji Todori , Yoshiaki Fukuzumi , Hideaki Aochi , Tsukasa Tada , Ko Yamada , Shigehiko Mori , Naomi Shida , Reiko Yoshimura
IPC分类号： G02B6/12 , G02B6/26 , G02B6/10 , B82Y20/00 , G02B6/122 , G02B6/125
CPC分类号： G02B6/12 , B82Y20/00 , G02B6/122 , G02B6/1223 , G02B6/125
摘要： According to one embodiment, a waveguide includes: a substrate and a member. The member covers at least a part of the substrate and has a difference in the refractive index from the substrate not less than 2. A plurality of concave parts are provided on the substrate. The concave parts are arrayed on an upper face of the substrate. At least a part of a side face of each of the concave parts includes an arc. An inner diameter of each of the concave parts is not more than 50 nm. Intervals of the neighboring concave parts are not more than the inner diameter. The member fills the concave part.
摘要翻译：根据一个实施例，波导包括：基板和部件。该构件覆盖基板的至少一部分，并且其折射率与基板的折射率不同不小于2.在基板上设置多个凹部。凹部排列在基板的上表面上。每个凹部的侧面的至少一部分包括弧。每个凹部的内径不大于50nm。相邻凹部的间隔不大于内径。构件填充凹部。

8. 发明授权

US08957501B2 Non-volatile semiconductor storage device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08957501B2
公开(公告)日：2015-02-17
申请号：US13671077
申请日：2012-11-07
申请人： Takeshi Hioka , Yoshiaki Fukuzumi
发明人： Takeshi Hioka , Yoshiaki Fukuzumi
IPC分类号： H01L27/06 , H01L27/115 , H01L49/02
CPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L28/88
摘要： A non-volatile semiconductor storage device contains a memory cell region, a first electrode, and a second electrode. The memory cell region is formed on a substrate and comprises multiple memory cells stacked on the substrate as part of memory strings. Multiple first conductive layers are laminated on the substrate. The first electrode functions as an electrode at one side of a capacitive component and comprises multiple conductive layers stacked on the substrate and separated horizontally from stacked conductive layers of the second electrode which is disposed at a side of the capacitive component opposite the first electrode.
摘要翻译：非易失性半导体存储装置包含存储单元区域，第一电极和第二电极。存储单元区域形成在衬底上并且包括作为存储器串的一部分堆叠在衬底上的多个存储器单元。多个第一导电层层叠在基板上。第一电极用作电容部件一侧的电极，并且包括层叠在基板上的多个导电层，并且与设置在与第一电极相对的电容部件侧的第二电极的层叠导电层水平分离。

9. 发明授权

US08912594B2 Nonvolatile semiconductor memory device including silicon germanium semiconductor layer 有权
标题翻译：包括硅锗半导体层的非易失性半导体存储器件
公开(公告)号：US08912594B2
公开(公告)日：2014-12-16
申请号：US13560260
申请日：2012-07-27
申请人： Jun Fujiki , Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Jun Fujiki , Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： H01L29/792 , H01L27/115 , H01L27/105
CPC分类号： H01L29/7926 , H01L27/11582 , H01L29/66833
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body, a second insulating layer, a select gate, a memory hole, a memory film, a channel body, a first semiconductor layer, and a second semiconductor layer. The select gate is provided on the second insulating layer. The memory film is provided on an inner wall of the memory hole. The channel body is provided inside the memory film. The first semiconductor layer is provided on an upper surface of the channel body. The second semiconductor layer is provided on the first semiconductor layer. The first semiconductor layer contains silicon germanium. The second semiconductor layer contains silicon germanium doped with a first impurity. A boundary between the first semiconductor layer and the second semiconductor layer is provided above a position of an upper end of the select gate.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括层叠体，第二绝缘层，选择栅极，存储器孔，存储膜，通道体，第一半导体层和第二半导体层。选择栅极设置在第二绝缘层上。记忆膜设置在存储孔的内壁上。通道体设置在记忆膜的内部。第一半导体层设置在通道主体的上表面上。第二半导体层设置在第一半导体层上。第一半导体层包含硅锗。第二半导体层包含掺杂有第一杂质的硅锗。第一半导体层和第二半导体层之间的边界设置在选择栅极的上端的位置的上方。

10. 发明授权

US08791464B2 Nonvolatile semiconductor memory device and method for manufacturing same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08791464B2
公开(公告)日：2014-07-29
申请号：US12820371
申请日：2010-06-22
申请人： Tomoko Fujiwara , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
发明人： Tomoko Fujiwara , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11573 , H01L27/11578 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a semiconductor pillar, a memory layer and an outer insulating film. The stacked structure includes a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction. The semiconductor pillar pierces the stacked structure in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The outer insulating film is provided between the electrode films and the memory layer. The device includes a first region and a second region. An outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region is larger than that in the second region. A thickness of the outer insulating film along the second direction in the first region is thicker than that in the second region.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括堆叠结构，半导体柱，存储层和外部绝缘膜。堆叠结构包括沿第一方向交替堆叠的多个电极膜和多个电极间绝缘膜。半导体柱沿第一方向刺穿层叠结构。存储层设置在电极膜和半导体柱之间。外绝缘膜设置在电极膜和存储层之间。该装置包括第一区域和第二区域。沿着与第一区域的第一方向垂直的第二方向的外绝缘膜的外径大于第二区域的外径。第一区域中沿着第二方向的外绝缘膜的厚度比第二区域厚。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式