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1. 发明专利

GB2414111B Advanced pattern definition for particle-beam processing 未知
公开(公告)号：GB2414111B
公开(公告)日：2010-01-27
申请号：GB0508659
申请日：2005-04-28
申请人： IMS NANOFABRICATION GMBH , IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR , CERNUSCA STEFAN
IPC分类号： G03F7/20 , H01J37/04 , G21K1/04 , G21K1/08 , G21K5/04 , G21K5/10 , H01J37/08 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/027
摘要： In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures ( 21 ) are arranged within a pattern definition field (pf) wherein the positions of the apertures ( 21 ) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

2. 发明专利

JP2005322918A New-type pattern lithography method for particle beam processing 有权
标题翻译：用于粒子束处理的新型图案方法
公开(公告)号：JP2005322918A
公开(公告)日：2005-11-17
申请号：JP2005134233
申请日：2005-05-02
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： PLATZGUMMER ELMAR , CERNUSCA STEFAN
IPC分类号： G03F7/20 , G21K1/04 , G21K1/08 , G21K5/04 , G21K5/10 , H01J37/04 , H01J37/08 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/045 , H01J37/3174 , H01J2237/31774
摘要： PROBLEM TO BE SOLVED: To improve resolution, decrease line edge roughness, and furthermore enable irradiation of pixels, in accordance with grey scale in the region defining device for multi-beam pattern of a particle-beam processing device. SOLUTION: In the particle-beam processing device, a plurality of apertures (21) are arranged in a pattern-determining field (pf), the positions of the apertures (21) are mutually offset by not only the integerfold of effective width (w); but also by the integerfold of integral fraction of the effective width of the apertures, taken along the vertical or parallel directions (X, Y) to scanning directions. The pattern-determining field (pf) is divided into several domains (D), comprising the apertures configuring a number of zigzag lines (pl); the apertures in domains are mutually offset by the integerfold of the effective widths (w) along the vertical directions to the scanning directions; whereas the offset amounts of the apertures in different domains are each integral fractions of the widths. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提高分辨率，降低线边缘粗糙度，并且还可以根据用于粒子束处理装置的多光束图案的区域定义装置中的灰度级来进行像素的照射。解决方案：在粒子束处理装置中，多个孔（21）以图案确定场（pf）布置，孔（21）的位置不仅相互抵消有效的整数倍宽（w）; 而且还沿着垂直或平行方向（X，Y）沿扫描方向截取的孔的有效宽度的整数分数的整数倍。模式确定字段（pf）被划分成若干域（D），包括配置多个之字形行（P1）的孔。畴中的孔径沿着与扫描方向相关的垂直方向的有效宽度（w）的整数倍相互偏移; 而不同区域中的孔的偏移量是宽度的整体分数。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2010041055A Correction of irradiation nonuniformity and image distortion 审中-公开
标题翻译：辐射非均匀性和图像失真的校正
公开(公告)号：JP2010041055A
公开(公告)日：2010-02-18
申请号：JP2009181392
申请日：2009-08-04
申请人： Ims Nanofabrication Ag , アイエムエスナノファブリケーションエージー
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： H01L21/027 , H01J37/305
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/20 , G03F7/70433 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To provide an improved aperture arrangement in a particle beam exposure device, the aperture arrangement being irradiated with a charged particle beam and allowing the beam to pass only through multiple apertures to form a pattern on a target. SOLUTION: The exposure device has: an aperture array with multiple apertures of a same shape which define shapes and relative arrangement of beamls passing through the apertures; and a blanking means for switching off the travel of beamlets that have passed through the apertures to be defined and selected by them. The apertures are arranged on an aperture arraying means in accordance with an arrangement shifted from the regular arrangement by slight deviations, thereby correcting distortion caused by the particle beam exposure device, wherein aperture sizes of the aperture array differ all over the aperture array in order to correct currents radiated on the target thorough the apertures and corresponding openings. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在粒子束曝光装置中提供改进的孔布置，孔布置被带电粒子束照射并且允许光束仅通过多个孔以在靶上形成图案。曝光装置具有：具有相同形状的多个孔的孔径阵列，其限定穿过孔的光束的形状和相对布置; 以及用于切断通过要由其限定和选择的孔的小射束的行程的消隐装置。根据从正规布置偏移的布置稍微偏离的孔布置在孔阵列装置上，从而校正由粒子束曝光装置引起的变形，其中孔径阵列的孔径尺寸在孔阵列上不同，以便通过孔和对应的开口正确地辐射在目标上的电流。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010212684A Global point spread function in multi-beam patterning 有权
标题翻译：多波束图案中的全局点传播功能
公开(公告)号：JP2010212684A
公开(公告)日：2010-09-24
申请号：JP2010046978
申请日：2010-03-03
申请人： Ims Nanofabrication Ag , アイエムエスナノファブリケーションアーゲー
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： H01L21/027 , H01J37/305
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To increase the stability of a construction imaged on a target.
SOLUTION: In the exposure step of a particle multi-beam structure type device, images are directed by a pattern definition means that generates patterned particle beams by a number of beam lets and projected by a lens barrel.The lens barrel has at least one controllable deviation means on the target surface to form a beam image at a nominal position on the target.The beam images are moved to different positions by changing nominal positions of the beam images regarding a target between exposure steps.The actual position of the beam image can be changed by the controllable deviation means in each exposure step through a set of positions that achieves a position distribution in the image face around the central position that coincide with the nominal position.Thus, uniform additional blurring is introduced through the entire beam image.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高在目标上成像的结构的稳定性。解决方案：在粒子多光束结构型装置的曝光步骤中，图像由图案定义装置引导，该图案定义装置通过多个光束产生图案化的粒子束，并由透镜筒投射。镜筒在在目标表面上的最小一个可控偏差意味着在目标上的标称位置处形成光束图像。通过改变关于曝光步骤之间的目标的光束图像的标称位置，将波束图像移动到不同的位置。可以通过在每个曝光步骤中的可控偏差装置通过一组位置来改变光束图像，这些位置实现在与标称位置重合的中心位置周围的图像面中的位置分布。因此，通过整个光束引入均匀的附加模糊图片。版权所有（C）2010，JPO＆INPIT

5. 发明申请

WO2006086815A2 CHARGED-PARTICLE EXPOSURE APPARATUS 审中-公开
标题翻译：充电粒子曝光装置
公开(公告)号：WO2006086815A2
公开(公告)日：2006-08-24
申请号：PCT/AT2006000060
申请日：2006-02-16
申请人： IMS NANOFABRICATION GMBH , PLATZGUMMER ELMAR , CERNUSCA STEFAN , STENGL GERHARD
发明人： PLATZGUMMER ELMAR , CERNUSCA STEFAN , STENGL GERHARD
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3175 , H01J2237/31788 , H01J2237/31793
摘要： A particle-beam projection processing apparatus (100) for irradiating a target (41), with an illumination system (101) for forming a wide-area illuminating beam (Ip) of energetic electrically charged particles; a pattern definition means (102) for positioning an aperture pattern (21) in the path of the illuminating beam; and a projection system (103) for projecting the beam thus patterned (pb) onto a target (41) to be positioned after the projection system. A foil (34, 35) located across the path of the patterned beam (pb) is positioned between the pattern definition means (102) and the position of the target (41) at a location close to an image (i0) of the aperture pattern (21) formed by the projection system.
摘要翻译：一种用于对目标物（41）照射用于形成能量带电粒子的广域照明光束（Ip）的照明系统（101）的粒子束投影处理装置（100）用于将光圈图案（21）定位在照明光束的路径中的图案定义装置（102）以及投影系统（103），用于将如此图案化的光束（pb）投影到目标（41）上以在投影系统之后定位。位于图案化光束（pb）的路径上的箔片（34,35）位于图案定义装置（102）和目标（41）的靠近孔径图像（i0）的位置之间图案（21）由投影系统形成。

6. 发明专利

NL2003304A1 Compensation of Dose Inhomogeneity and Image Distortion. 未知
公开(公告)号：NL2003304A1
公开(公告)日：2010-02-09
申请号：NL2003304
申请日：2009-07-29
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： G03F7/20 , H01J37/317

7. 发明专利

GB2414111A Pattern definition device for particle-beam processing apparatus 未知
公开(公告)号：GB2414111A
公开(公告)日：2005-11-16
申请号：GB0508659
申请日：2005-04-28
申请人： IMS NANOFABRICATION GMBH
发明人： PLATZGUMMER ELMAR , CERNUSCA STEFAN
IPC分类号： G03F7/20 , G21K1/04 , G21K1/08 , G21K5/04 , G21K5/10 , H01J37/04 , H01J37/08 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/027
摘要： In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along this direction, but also multiple integers of an integer fraction of the effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

8. 发明专利

NL2003304C COMPENSATION OF DOSE INHOMOGENEITY AND IMAGE DISTORTION. 未知
公开(公告)号：NL2003304C
公开(公告)日：2010-09-14
申请号：NL2003304
申请日：2009-07-29
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： G03F1/16 , G03F7/20 , H01J37/317
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/20 , G03F7/70433 , H01J37/3174

9. 发明专利

NL2003304C2 COMPENSATION OF DOSE INHOMOGENEITY AND IMAGE DISTORTION. 未知
公开(公告)号：NL2003304C2
公开(公告)日：2010-09-14
申请号：NL2003304
申请日：2009-07-29
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： G03F1/16 , G03F7/20 , H01J37/317
摘要： An improved aperture arrangement in a device for defining a pattern on a target, for use in a particle-beam exposure apparatus, by being irradiated with a beam of electrically charged particles and allowing passage of the beam only through a plurality of apertures. The device includes an aperture array having a plurality of apertures of identical shape defining the shape and relative position of beamlets permeating the apertures. A blanking device switches off the passage of selected beamlets permeating the apertures and defined by them. The apertures are arranged on the aperture array according to an arrangement deviating from a regular arrangement by small deviations, adjusting for distortions caused by the particle-beam exposure apparatus, and the size of the apertures of the aperture array differs across the aperture array in order to allow for an adjustment of the current radiated on the target through the apertures and the corresponding openings.

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