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    • 1. 发明专利
    • Method for multibeam exposure on target
    • 目标多孔接触方法
    • JP2011199279A
    • 2011-10-06
    • JP2011045349
    • 2011-03-02
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMAR
    • H01L21/027
    • B82Y40/00B82Y10/00H01J37/3177
    • PROBLEM TO BE SOLVED: To provide an electron beam lithographic method containing a plurality of beamlets which improves dose the accuracy, in an adjacent stripe boundary region where exposure is done in an overlapping manner.SOLUTION: Since stripes (s1, s2) which are rows of image pixels consisting of exposure stripes have edges (m12, m21) mutually superimposed and overlapped in the boundaries to the adjacent stripe, the position of image pixel of nominally overlapped edge (m12) overlaps or essentially coincides with the image pixel of the corresponding overlapped edge (m21). During the exposures of the overlapped edges (m21), the first subset (n) of the image pixel of overlapped edge is exposed, while that of the second subset (n), which is a complementary subset to the desired pattern, is not exposed; and in contrast, during the exposures of the corresponding overlapped edge (m12), the image pixel corresponding to image pixel of the first subset is not exposed, while the image pixel corresponding to the image pixel of the second subset is exposed.
    • 要解决的问题:提供一种包含多个子束的电子束光刻方法,其在以重叠的方式进行曝光的相邻条纹边界区域中提高剂量的准确度。解决方案:由于条纹(s1,s2)是行 由曝光条纹构成的图像像素具有在相邻条纹的边界中相互叠加并重叠的边缘(m12,m21),标称重叠边缘(m12)的图像像素的位置与相应重叠的边缘(m12)的图像像素重叠或基本上重合 边(m21)。 在重叠边缘(m21)的曝光期间,重叠边缘的图像像素的第一子集(n)被曝光,而作为期望图案的互补子集的第二子集(n)的第一子集(n)不被暴露 ; 相反,在对应的重叠边缘(m12)的曝光期间,对应于第一子集的图像像素的图像像素不被曝光,而与第二子集的图像像素对应的图像像素被曝光。
    • 2. 发明专利
    • Method for maskless particle beam exposure
    • 无障碍颗粒光束曝光方法
    • JP2008252095A
    • 2008-10-16
    • JP2008078357
    • 2008-03-25
    • Ims Nanofabrication Agイーエムエス ナノファブリカツィオン アーゲー
    • FRAGNER HEINRICHPLATZGUMMER ELMAR
    • H01L21/027G03F7/20
    • H01J37/3174B82Y10/00B82Y40/00H01J37/302H01J2237/30483
    • PROBLEM TO BE SOLVED: To provide a method for achieving a high throughput rate by using an easily implementable PD structure. SOLUTION: The method for forming an aperture image includes the steps of radiating charged particle beam, without using a mask onto a target (40) by a pattern determination means, having a plurality of apertures, and forming an aperture image of the patter determination means on a target (v) that moves relatively, in a direction lateral to a predetermined axis. In the method, the image position is moved along the target during the pixel exposure period, wherein the relative moving distance of the target is more than a multiple of the image width (w) to be measured on the target, after the pixel exposure period, the beam image position is changed, and this position change results in substantially compensating the move of the beam image position. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种通过使用易于实施的PD结构来实现高吞吐量的方法。 解决方案:用于形成孔径图像的方法包括以下步骤:不用通过具有多个孔的图案确定装置在目标(40)上使用掩模来放射带电粒子束,并且形成孔径图像 图案确定装置在相对于沿预定轴线的方向相对移动的目标(v)上。 在该方法中,在像素曝光期间,图像位置沿着目标移动,其中,在像素曝光期间,目标的相对移动距离大于要在目标上测量的图像宽度(w)的倍数 ,光束图像位置被改变,并且该位置变化导致基本上补偿光束图像位置的移动。 版权所有(C)2009,JPO&INPIT
    • 4. 发明专利
    • Multi-beam deflector array means with bonded electrodes
    • 多光束偏转器阵列与粘结电极相同
    • JP2010267962A
    • 2010-11-25
    • JP2010107571
    • 2010-05-07
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMAR
    • H01L21/027G03F7/20H01J37/147H01J37/305
    • H01J37/3174B82Y10/00B82Y40/00H01J37/045H01J2237/0437
    • PROBLEM TO BE SOLVED: To provide a multi-beam deflector array means for a particle beam exposure apparatus using a beam of charged particles.
      SOLUTION: The multi-beam deflector array means has an overall plate-like shape with a membrane region and a buried CMOS layer, the membrane region includes a first side facing an incoming particle beam and a second side opposite to the first side, and the array means includes an aperture array comprising each aperture allowing passage of a corresponding beam element formed out of the particle beam and an electrode array comprising each aperture associated with at least one of electrodes and the electrodes controlled through the CMOS layer. The electrodes are columnar and erected completely independent of the body of the multi-beam deflector array means, and the electrodes are connected to one side of the body of the multi-beam deflector array means by a bonding connection part.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种用于使用带电粒子束的粒子束曝光装置的多光束偏转器阵列装置。 解决方案:多光束偏转器阵列装置具有膜状区域和掩埋CMOS层的总体板状形状,膜区域包括面向入射粒子束的第一侧和与第一侧相对的第二侧 并且阵列装置包括孔阵列,其包括允许通过由粒子束形成的对应的光束元件的每个孔,以及包括与至少一个电极相关联的每个孔和通过CMOS层控制的电极的电极阵列。 电极是柱状的并且完全独立于多光束偏转器阵列装置的主体,并且电极通过接合连接部分连接到多光束偏转器阵列装置的主体的一侧。 版权所有(C)2011,JPO&INPIT
    • 5. 发明专利
    • Constant current multibeam patterning
    • 恒定电流多模式
    • JP2010123966A
    • 2010-06-03
    • JP2009262585
    • 2009-11-18
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • FRAGNER HEINRICHPLATZGUMMER ELMARBUERLI ADRIAN
    • H01L21/027H01J37/305
    • H01J37/3177B82Y10/00B82Y40/00Y10S430/143
    • PROBLEM TO BE SOLVED: To allow appropriate light-exposure of an image to be patterned onto a target. SOLUTION: The invention relates to a method for forming a pattern on a surface of a substrate as the target by utilizing beams of charged particles in a plurality of exposure steps. The beam is split into patterned beams and relative movement is generated between the substrate and a pattern defining means. As a result, the patterned particle beams effectively move from one end to the other end over the entire surface of the substrate to expose image elements on the substrate surface in each exposing step. The image elements on the target are exposed to beamlets a plurality of times, namely several times during the plurality of exposure steps in accordance with a specific sequence. During exposing the pattern, the sequence of image element exposure steps is arranged non-linearly according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variation in the optical column of the multibeam exposure apparatus. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:允许将图像适当地曝光到目标上。 解决方案:本发明涉及通过利用多个曝光步骤中的带电粒子束在作为靶的基板的表面上形成图案的方法。 光束被分裂为图案化的光束,并且在衬底和图案限定装置之间产生相对运动。 结果,图案化的粒子束在衬底的整个表面上有效地从一端移动到另一端,以在每个暴露步骤中露出衬底表面上的图像元素。 目标上的图像元素多次暴露于子束,即根据特定序列在多个曝光步骤期间多次。 在曝光图案期间,根据从一个曝光步骤到随后的曝光步骤的特定规则,图像元素曝光步骤的顺序被非线性排列,以便减少多光束曝光设备的光学柱中的电流变化。 版权所有(C)2010,JPO&INPIT
    • 6. 发明专利
    • Correction of irradiation nonuniformity and image distortion
    • 辐射非均匀性和图像失真的校正
    • JP2010041055A
    • 2010-02-18
    • JP2009181392
    • 2009-08-04
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション エージー
    • PLATZGUMMER ELMARFRAGNER HEINRICHCERNUSCA STEFAN
    • H01L21/027H01J37/305
    • B82Y40/00B82Y10/00G03F1/20G03F7/70433H01J37/3174
    • PROBLEM TO BE SOLVED: To provide an improved aperture arrangement in a particle beam exposure device, the aperture arrangement being irradiated with a charged particle beam and allowing the beam to pass only through multiple apertures to form a pattern on a target. SOLUTION: The exposure device has: an aperture array with multiple apertures of a same shape which define shapes and relative arrangement of beamls passing through the apertures; and a blanking means for switching off the travel of beamlets that have passed through the apertures to be defined and selected by them. The apertures are arranged on an aperture arraying means in accordance with an arrangement shifted from the regular arrangement by slight deviations, thereby correcting distortion caused by the particle beam exposure device, wherein aperture sizes of the aperture array differ all over the aperture array in order to correct currents radiated on the target thorough the apertures and corresponding openings. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了在粒子束曝光装置中提供改进的孔布置,孔布置被带电粒子束照射并且允许光束仅通过多个孔以在靶上形成图案。 曝光装置具有:具有相同形状的多个孔的孔径阵列,其限定穿过孔的光束的形状和相对布置; 以及用于切断通过要由其限定和选择的孔的小射束的行程的消隐装置。 根据从正规布置偏移的布置稍微偏离的孔布置在孔阵列装置上,从而校正由粒子束曝光装置引起的变形,其中孔径阵列的孔径尺寸在孔阵列上不同,以便 通过孔和对应的开口正确地辐射在目标上的电流。 版权所有(C)2010,JPO&INPIT
    • 7. 发明专利
    • 荷電粒子マルチビーム露光のための方法
    • 充电颗粒多波束曝光方法
    • JP2015029096A
    • 2015-02-12
    • JP2014150242
    • 2014-07-23
    • アイエムエス ナノファブリケーション アーゲーIms Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMAR
    • H01L21/027G03F7/20H01J37/305
    • H01J37/3026H01J37/3175H01J37/3177H01J2237/31754H01J2237/31764H01J2237/31766H01J2237/31774
    • 【課題】画素のアドレッシングの改良、トロッティングモード書込みストラテジの改良、さらには、光学結像誤差の影響を減少させるストラテジ技術を提供する。【解決手段】パターン像は、露光される領域にわたってターゲット上の経路に沿って移動され、この移動は、いくかのストライプs11、s21を定義し、ストライプs11、s21は、領域を順次露光でカバーし、主方向を横切って測定されるそれぞれの幅を有する。いくつかのストライプs11、s21が、少なくとも2つの連続するパスで書き込まれ、したがって、各パスに関して、1つのパスのストライプの幅が組み合わさって、露光される領域の全幅をカバーする。各パスは、それぞれのパス中に露光可能なパターン画素のいくつかの部分グリッドG1、G2の1つに関連付けられる。互いに異なる部分グリッドG1、G2が、露光される領域を構成する複数のパターン画素全体に組み合わさる。【選択図】図6C
    • 要解决的问题:提供改进像素寻址的策略技术,改进小跑模式写入的策略,减少光学成像误差的影响。解决方案:沿着要暴露的区域的目标上的路径移动图案图像 ,并且这个运动定义了多个条纹s11,s21。 条纹s11,s21以顺序曝光覆盖区域,并且在主方向上测量各自的宽度。 多个条纹s11,s21被写入至少两个后续通行证; 并且在每次通过中,一次通过的条纹的宽度被组合以覆盖要暴露的区域的整个宽度; 并且每个通道与在通过期间可曝光的图案像素的多个局部网格G1,G2中的一个相关联。 相互不同的部分网格G1,G2在构成要曝光的区域的多个图案像素的全部中组合。
    • 9. 发明专利
    • Pattern definition device with multiple multi-beam array
    • 具有多个多波束阵列的图案定义装置
    • JP2011171713A
    • 2011-09-01
    • JP2010282083
    • 2010-12-17
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMARLOESCHNER HANS
    • H01L21/027
    • H01J37/045B82Y10/00B82Y40/00H01J37/28H01J37/3174H01J2237/0437H01J2237/0458H01J2237/1501H01J2237/1502
    • PROBLEM TO BE SOLVED: To provide a multi-beam pattern defining (PD) system, capable of correcting a distortion error in an image forming system and a charged particle processing or inspecting apparatus. SOLUTION: An aperture array means (202) includes at least two sets of apertures (221, 222) to determine respective beamlets (b1-b5). Here, the sets of apertures include a plurality of apertures arranged in an intermingled arrangement and different sets of apertures are offset from one another by a common displacement vector (dl2). An opening array means (201) has a plurality of openings (210), although configured, to allow a subset of beamlets corresponding to one of the sets of apertures to pass through, but it does not have an opening (to allow the beam to pass through), at a position corresponding to the other sets of apertures. A positioning means moves the aperture array means in cooperation with the opening array means, in order to selectively align one of the sets of apertures with an opening of the opening array means. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供能够校正图像形成系统和带电粒子处理或检查装置中的失真误差的多光束图案定义(PD)系统。 解决方案:孔阵列装置(202)包括至少两组孔(221,222),以确定相应的子束(b1-b5)。 这里,孔组包括以混合布置布置的多个孔,并且不同组的孔通过公共位移矢量(d12)彼此偏移。 开口阵列装置(201)具有多个开口(210),虽然构造成允许对应于这组孔径中的一组的子束的子集通过,但是它不具有开口(以允许光束 穿过),在与其他组的孔对应的位置。 定位装置与开口阵列装置协调移动孔径阵列装置,以便选择性地将孔组中的一个与开口阵列装置的开口对准。 版权所有(C)2011,JPO&INPIT
    • 10. 发明专利
    • Global point spread function in multi-beam patterning
    • 多波束图案中的全局点传播功能
    • JP2010212684A
    • 2010-09-24
    • JP2010046978
    • 2010-03-03
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMARFRAGNER HEINRICHCERNUSCA STEFAN
    • H01L21/027H01J37/305
    • H01J37/3174B82Y10/00B82Y40/00
    • PROBLEM TO BE SOLVED: To increase the stability of a construction imaged on a target.
      SOLUTION: In the exposure step of a particle multi-beam structure type device, images are directed by a pattern definition means that generates patterned particle beams by a number of beam lets and projected by a lens barrel.The lens barrel has at least one controllable deviation means on the target surface to form a beam image at a nominal position on the target.The beam images are moved to different positions by changing nominal positions of the beam images regarding a target between exposure steps.The actual position of the beam image can be changed by the controllable deviation means in each exposure step through a set of positions that achieves a position distribution in the image face around the central position that coincide with the nominal position.Thus, uniform additional blurring is introduced through the entire beam image.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提高在目标上成像的结构的稳定性。 解决方案:在粒子多光束结构型装置的曝光步骤中,图像由图案定义装置引导,该图案定义装置通过多个光束产生图案化的粒子束,并由透镜筒投射。镜筒在 在目标表面上的最小一个可控偏差意味着在目标上的标称位置处形成光束图像。通过改变关于曝光步骤之间的目标的光束图像的标称位置,将波束图像移动到不同的位置。 可以通过在每个曝光步骤中的可控偏差装置通过一组位置来改变光束图像,这些位置实现在与标称位置重合的中心位置周围的图像面中的位置分布。因此,通过整个光束引入均匀的附加模糊 图片。 版权所有(C)2010,JPO&INPIT