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1. 发明专利

JP2008252095A Method for maskless particle beam exposure 有权
标题翻译：无障碍颗粒光束曝光方法
公开(公告)号：JP2008252095A
公开(公告)日：2008-10-16
申请号：JP2008078357
申请日：2008-03-25
申请人： Ims Nanofabrication Ag , イーエムエスナノファブリカツィオンアーゲー
发明人： FRAGNER HEINRICH , PLATZGUMMER ELMAR
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J2237/30483
摘要： PROBLEM TO BE SOLVED: To provide a method for achieving a high throughput rate by using an easily implementable PD structure. SOLUTION: The method for forming an aperture image includes the steps of radiating charged particle beam, without using a mask onto a target (40) by a pattern determination means, having a plurality of apertures, and forming an aperture image of the patter determination means on a target (v) that moves relatively, in a direction lateral to a predetermined axis. In the method, the image position is moved along the target during the pixel exposure period, wherein the relative moving distance of the target is more than a multiple of the image width (w) to be measured on the target, after the pixel exposure period, the beam image position is changed, and this position change results in substantially compensating the move of the beam image position. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过使用易于实施的PD结构来实现高吞吐量的方法。解决方案：用于形成孔径图像的方法包括以下步骤：不用通过具有多个孔的图案确定装置在目标（40）上使用掩模来放射带电粒子束，并且形成孔径图像图案确定装置在相对于沿预定轴线的方向相对移动的目标（v）上。在该方法中，在像素曝光期间，图像位置沿着目标移动，其中，在像素曝光期间，目标的相对移动距离大于要在目标上测量的图像宽度（w）的倍数，光束图像位置被改变，并且该位置变化导致基本上补偿光束图像位置的移动。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2010123966A Constant current multibeam patterning 有权
标题翻译：恒定电流多模式
公开(公告)号：JP2010123966A
公开(公告)日：2010-06-03
申请号：JP2009262585
申请日：2009-11-18
申请人： Ims Nanofabrication Ag , アイエムエスナノファブリケーションアーゲー
发明人： FRAGNER HEINRICH , PLATZGUMMER ELMAR , BUERLI ADRIAN
IPC分类号： H01L21/027 , H01J37/305
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： PROBLEM TO BE SOLVED: To allow appropriate light-exposure of an image to be patterned onto a target. SOLUTION: The invention relates to a method for forming a pattern on a surface of a substrate as the target by utilizing beams of charged particles in a plurality of exposure steps. The beam is split into patterned beams and relative movement is generated between the substrate and a pattern defining means. As a result, the patterned particle beams effectively move from one end to the other end over the entire surface of the substrate to expose image elements on the substrate surface in each exposing step. The image elements on the target are exposed to beamlets a plurality of times, namely several times during the plurality of exposure steps in accordance with a specific sequence. During exposing the pattern, the sequence of image element exposure steps is arranged non-linearly according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variation in the optical column of the multibeam exposure apparatus. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：允许将图像适当地曝光到目标上。解决方案：本发明涉及通过利用多个曝光步骤中的带电粒子束在作为靶的基板的表面上形成图案的方法。光束被分裂为图案化的光束，并且在衬底和图案限定装置之间产生相对运动。结果，图案化的粒子束在衬底的整个表面上有效地从一端移动到另一端，以在每个暴露步骤中露出衬底表面上的图像元素。目标上的图像元素多次暴露于子束，即根据特定序列在多个曝光步骤期间多次。在曝光图案期间，根据从一个曝光步骤到随后的曝光步骤的特定规则，图像元素曝光步骤的顺序被非线性排列，以便减少多光束曝光设备的光学柱中的电流变化。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010041055A Correction of irradiation nonuniformity and image distortion 审中-公开
标题翻译：辐射非均匀性和图像失真的校正
公开(公告)号：JP2010041055A
公开(公告)日：2010-02-18
申请号：JP2009181392
申请日：2009-08-04
申请人： Ims Nanofabrication Ag , アイエムエスナノファブリケーションエージー
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： H01L21/027 , H01J37/305
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/20 , G03F7/70433 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To provide an improved aperture arrangement in a particle beam exposure device, the aperture arrangement being irradiated with a charged particle beam and allowing the beam to pass only through multiple apertures to form a pattern on a target. SOLUTION: The exposure device has: an aperture array with multiple apertures of a same shape which define shapes and relative arrangement of beamls passing through the apertures; and a blanking means for switching off the travel of beamlets that have passed through the apertures to be defined and selected by them. The apertures are arranged on an aperture arraying means in accordance with an arrangement shifted from the regular arrangement by slight deviations, thereby correcting distortion caused by the particle beam exposure device, wherein aperture sizes of the aperture array differ all over the aperture array in order to correct currents radiated on the target thorough the apertures and corresponding openings. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在粒子束曝光装置中提供改进的孔布置，孔布置被带电粒子束照射并且允许光束仅通过多个孔以在靶上形成图案。曝光装置具有：具有相同形状的多个孔的孔径阵列，其限定穿过孔的光束的形状和相对布置; 以及用于切断通过要由其限定和选择的孔的小射束的行程的消隐装置。根据从正规布置偏移的布置稍微偏离的孔布置在孔阵列装置上，从而校正由粒子束曝光装置引起的变形，其中孔径阵列的孔径尺寸在孔阵列上不同，以便通过孔和对应的开口正确地辐射在目标上的电流。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010212684A Global point spread function in multi-beam patterning 有权
标题翻译：多波束图案中的全局点传播功能
公开(公告)号：JP2010212684A
公开(公告)日：2010-09-24
申请号：JP2010046978
申请日：2010-03-03
申请人： Ims Nanofabrication Ag , アイエムエスナノファブリケーションアーゲー
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： H01L21/027 , H01J37/305
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To increase the stability of a construction imaged on a target.
SOLUTION: In the exposure step of a particle multi-beam structure type device, images are directed by a pattern definition means that generates patterned particle beams by a number of beam lets and projected by a lens barrel.The lens barrel has at least one controllable deviation means on the target surface to form a beam image at a nominal position on the target.The beam images are moved to different positions by changing nominal positions of the beam images regarding a target between exposure steps.The actual position of the beam image can be changed by the controllable deviation means in each exposure step through a set of positions that achieves a position distribution in the image face around the central position that coincide with the nominal position.Thus, uniform additional blurring is introduced through the entire beam image.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高在目标上成像的结构的稳定性。解决方案：在粒子多光束结构型装置的曝光步骤中，图像由图案定义装置引导，该图案定义装置通过多个光束产生图案化的粒子束，并由透镜筒投射。镜筒在在目标表面上的最小一个可控偏差意味着在目标上的标称位置处形成光束图像。通过改变关于曝光步骤之间的目标的光束图像的标称位置，将波束图像移动到不同的位置。可以通过在每个曝光步骤中的可控偏差装置通过一组位置来改变光束图像，这些位置实现在与标称位置重合的中心位置周围的图像面中的位置分布。因此，通过整个光束引入均匀的附加模糊图片。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010123958A Method for maskless particle-beam exposure 有权
标题翻译：无障碍颗粒光束曝光方法
公开(公告)号：JP2010123958A
公开(公告)日：2010-06-03
申请号：JP2009260900
申请日：2009-11-16
申请人： Ims Nanofabrication Ag , アイエムエスナノファブリケーションアーゲー
发明人： FRAGNER HEINRICH , PLATZGUMMER ELMAR , NOWAK ROBERT , BUERLI ADRIAN
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： PROBLEM TO BE SOLVED: To provide a method of simplifying an image forming strategy and allowing simple mapping from a polygonal structure to gray level data not influenced by actual blurring in a maskless particle multibeam processing device.
SOLUTION: The particle beam is projected onto a target which moves at a continuous speed in a scanning direction through a pattern definition system for generating regular arrays according to a desired pattern. During a sequence of uniformly timed exposure steps, a beam image is moved along with the target in the scanning direction and the position of the beam image is changed relative to the target. During each exposure step, the target covers a distance longer than a mutual distance between adjacent image elements. The position of the beam image at the consecutive exposure steps corresponds to that of a sequence of interlacing placement grids. After each exposure step, the beam image is shifted to a position associated with a different placement grid due to change of the position generally including a component across the scanning direction, thus cycling through the grids.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种简化图像形成策略并允许从多边形结构到不受无掩模粒子多波束处理装置中的实际模糊影响的灰度级数据的简单映射的方法。解决方案：将粒子束投影到目标上，目标物通过用于根据期望的图案产生规则阵列的图案定义系统以扫描方向的连续速度移动。在一系列均匀的曝光步骤期间，光束图像与目标在扫描方向上一起移动，并且光束图像的位置相对于目标变化。在每个曝光步骤期间，目标覆盖比相邻图像元素之间的相互距离长的距离。在连续曝光步骤中的光束图像的位置对应于交错放置网格序列的位置。在每个曝光步骤之后，由于通常在扫描方向上包括部件的位置的变化，光束图像被移动到与不同的布置网格相关联的位置，因此循环通过网格。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2012023411A Method for maskless particle-beam exposure 有权
标题翻译：无障碍颗粒光束曝光方法
公开(公告)号：JP2012023411A
公开(公告)日：2012-02-02
申请号：JP2011241847
申请日：2011-11-04
申请人： Ims Nanofabrication Ag , イーエムエスナノファブリカツィオンアーゲー
发明人： FRAGNER HEINRICH , PLATZGUMMER ELMAR
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J2237/30483
摘要： PROBLEM TO BE SOLVED: To provide a method for providing a high throughput rate using an easily implementable PD structure.SOLUTION: In a method including maskless irradiating a target (40) with a beam of electrically charged particles using pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to a prescribed axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which the change of location generally compensates the overall movement of the location of the beam image.
摘要翻译：要解决的问题：提供一种使用易于实施的PD结构来提供高吞吐量的方法。解决方案：在包括使用具有多个孔的图案定义装置的带有带电粒子的无掩模照射目标（40）的方法中，并且将图案定义装置中的孔成像到移动（v）相对的目标对于图案定义意味着横向到规定的轴，在像素曝光期间，图像的位置与目标一起移动，在该像素曝光期间，覆盖目标的相对运动的距离至少为宽度的倍数（ w）在目标上测量的孔径图像，并且在所述像素曝光周期之后，波束图像的位置改变，位置的变化通常补偿波束图像的位置的整体运动。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2010177667A Method for producing multi-beam deflector array device having electrode 有权
标题翻译：用于生产具有电极的多光束偏转器阵列装置的方法
公开(公告)号：JP2010177667A
公开(公告)日：2010-08-12
申请号：JP2010016377
申请日：2010-01-28
申请人： Ims Nanofabrication Ag , アイエムエスナノファブリケーションアーゲー
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/045 , H01J37/09 , H01J37/3026 , H01J2237/0437
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a multi-beam deflector array device with a plurality of openings for use in a projection lithography system. SOLUTION: This method starts from a CMOS wafer and comprises steps of: generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; protecting the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes 112; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, the opening stretching across the area so that the columns are arranged opposite of each other on the sidewalls of the opening 110. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造具有用于投影光刻系统的多个开口的多光束偏转器阵列器件的方法。解决方案：该方法从CMOS晶片开始并且包括以下步骤：在晶片空白的第一侧上的电路层下方的边缘处产生不起作用的至少一对平行沟槽，沟槽进入散装材料层; 保护沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中，从而产生用作电极112的填充材料列; 将金属接触装置附接到电极的顶部; 构造电极之间的开口，开口延伸穿过该区域，使得列在开口110的侧壁上彼此相对布置。（C）2010年，JPO和INPIT

8. 发明专利

NL2003304A1 Compensation of Dose Inhomogeneity and Image Distortion. 未知
公开(公告)号：NL2003304A1
公开(公告)日：2010-02-09
申请号：NL2003304
申请日：2009-07-29
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： G03F7/20 , H01J37/317

9. 发明专利

DE102008015305A1 未知
公开(公告)号：DE102008015305A1
公开(公告)日：2008-10-02
申请号：DE102008015305
申请日：2008-03-20
申请人： IMS NANOFABRICATION AG
发明人： FRAGNER HEINRICH , PLATZGUMMER ELMAR
IPC分类号： H01J37/30 , G03F7/20
摘要： For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.

10. 发明专利

NL2003304C COMPENSATION OF DOSE INHOMOGENEITY AND IMAGE DISTORTION. 未知
公开(公告)号：NL2003304C
公开(公告)日：2010-09-14
申请号：NL2003304
申请日：2009-07-29
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR , FRAGNER HEINRICH , CERNUSCA STEFAN
IPC分类号： G03F1/16 , G03F7/20 , H01J37/317
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/20 , G03F7/70433 , H01J37/3174

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