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    • 1. 发明专利
    • Correction of irradiation nonuniformity and image distortion
    • 辐射非均匀性和图像失真的校正
    • JP2010041055A
    • 2010-02-18
    • JP2009181392
    • 2009-08-04
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション エージー
    • PLATZGUMMER ELMARFRAGNER HEINRICHCERNUSCA STEFAN
    • H01L21/027H01J37/305
    • B82Y40/00B82Y10/00G03F1/20G03F7/70433H01J37/3174
    • PROBLEM TO BE SOLVED: To provide an improved aperture arrangement in a particle beam exposure device, the aperture arrangement being irradiated with a charged particle beam and allowing the beam to pass only through multiple apertures to form a pattern on a target. SOLUTION: The exposure device has: an aperture array with multiple apertures of a same shape which define shapes and relative arrangement of beamls passing through the apertures; and a blanking means for switching off the travel of beamlets that have passed through the apertures to be defined and selected by them. The apertures are arranged on an aperture arraying means in accordance with an arrangement shifted from the regular arrangement by slight deviations, thereby correcting distortion caused by the particle beam exposure device, wherein aperture sizes of the aperture array differ all over the aperture array in order to correct currents radiated on the target thorough the apertures and corresponding openings. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了在粒子束曝光装置中提供改进的孔布置,孔布置被带电粒子束照射并且允许光束仅通过多个孔以在靶上形成图案。 曝光装置具有:具有相同形状的多个孔的孔径阵列,其限定穿过孔的光束的形状和相对布置; 以及用于切断通过要由其限定和选择的孔的小射束的行程的消隐装置。 根据从正规布置偏移的布置稍微偏离的孔布置在孔阵列装置上,从而校正由粒子束曝光装置引起的变形,其中孔径阵列的孔径尺寸在孔阵列上不同,以便 通过孔和对应的开口正确地辐射在目标上的电流。 版权所有(C)2010,JPO&INPIT
    • 3. 发明专利
    • Method for multibeam exposure on target
    • 目标多孔接触方法
    • JP2011199279A
    • 2011-10-06
    • JP2011045349
    • 2011-03-02
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMAR
    • H01L21/027
    • B82Y40/00B82Y10/00H01J37/3177
    • PROBLEM TO BE SOLVED: To provide an electron beam lithographic method containing a plurality of beamlets which improves dose the accuracy, in an adjacent stripe boundary region where exposure is done in an overlapping manner.SOLUTION: Since stripes (s1, s2) which are rows of image pixels consisting of exposure stripes have edges (m12, m21) mutually superimposed and overlapped in the boundaries to the adjacent stripe, the position of image pixel of nominally overlapped edge (m12) overlaps or essentially coincides with the image pixel of the corresponding overlapped edge (m21). During the exposures of the overlapped edges (m21), the first subset (n) of the image pixel of overlapped edge is exposed, while that of the second subset (n), which is a complementary subset to the desired pattern, is not exposed; and in contrast, during the exposures of the corresponding overlapped edge (m12), the image pixel corresponding to image pixel of the first subset is not exposed, while the image pixel corresponding to the image pixel of the second subset is exposed.
    • 要解决的问题:提供一种包含多个子束的电子束光刻方法,其在以重叠的方式进行曝光的相邻条纹边界区域中提高剂量的准确度。解决方案:由于条纹(s1,s2)是行 由曝光条纹构成的图像像素具有在相邻条纹的边界中相互叠加并重叠的边缘(m12,m21),标称重叠边缘(m12)的图像像素的位置与相应重叠的边缘(m12)的图像像素重叠或基本上重合 边(m21)。 在重叠边缘(m21)的曝光期间,重叠边缘的图像像素的第一子集(n)被曝光,而作为期望图案的互补子集的第二子集(n)的第一子集(n)不被暴露 ; 相反,在对应的重叠边缘(m12)的曝光期间,对应于第一子集的图像像素的图像像素不被曝光,而与第二子集的图像像素对应的图像像素被曝光。
    • 4. 发明专利
    • Method for maskless particle beam exposure
    • 无障碍颗粒光束曝光方法
    • JP2008252095A
    • 2008-10-16
    • JP2008078357
    • 2008-03-25
    • Ims Nanofabrication Agイーエムエス ナノファブリカツィオン アーゲー
    • FRAGNER HEINRICHPLATZGUMMER ELMAR
    • H01L21/027G03F7/20
    • H01J37/3174B82Y10/00B82Y40/00H01J37/302H01J2237/30483
    • PROBLEM TO BE SOLVED: To provide a method for achieving a high throughput rate by using an easily implementable PD structure. SOLUTION: The method for forming an aperture image includes the steps of radiating charged particle beam, without using a mask onto a target (40) by a pattern determination means, having a plurality of apertures, and forming an aperture image of the patter determination means on a target (v) that moves relatively, in a direction lateral to a predetermined axis. In the method, the image position is moved along the target during the pixel exposure period, wherein the relative moving distance of the target is more than a multiple of the image width (w) to be measured on the target, after the pixel exposure period, the beam image position is changed, and this position change results in substantially compensating the move of the beam image position. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种通过使用易于实施的PD结构来实现高吞吐量的方法。 解决方案:用于形成孔径图像的方法包括以下步骤:不用通过具有多个孔的图案确定装置在目标(40)上使用掩模来放射带电粒子束,并且形成孔径图像 图案确定装置在相对于沿预定轴线的方向相对移动的目标(v)上。 在该方法中,在像素曝光期间,图像位置沿着目标移动,其中,在像素曝光期间,目标的相对移动距离大于要在目标上测量的图像宽度(w)的倍数 ,光束图像位置被改变,并且该位置变化导致基本上补偿光束图像位置的移动。 版权所有(C)2009,JPO&INPIT
    • 6. 发明专利
    • Multi-beam deflector array means with bonded electrodes
    • 多光束偏转器阵列与粘结电极相同
    • JP2010267962A
    • 2010-11-25
    • JP2010107571
    • 2010-05-07
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMAR
    • H01L21/027G03F7/20H01J37/147H01J37/305
    • H01J37/3174B82Y10/00B82Y40/00H01J37/045H01J2237/0437
    • PROBLEM TO BE SOLVED: To provide a multi-beam deflector array means for a particle beam exposure apparatus using a beam of charged particles.
      SOLUTION: The multi-beam deflector array means has an overall plate-like shape with a membrane region and a buried CMOS layer, the membrane region includes a first side facing an incoming particle beam and a second side opposite to the first side, and the array means includes an aperture array comprising each aperture allowing passage of a corresponding beam element formed out of the particle beam and an electrode array comprising each aperture associated with at least one of electrodes and the electrodes controlled through the CMOS layer. The electrodes are columnar and erected completely independent of the body of the multi-beam deflector array means, and the electrodes are connected to one side of the body of the multi-beam deflector array means by a bonding connection part.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种用于使用带电粒子束的粒子束曝光装置的多光束偏转器阵列装置。 解决方案:多光束偏转器阵列装置具有膜状区域和掩埋CMOS层的总体板状形状,膜区域包括面向入射粒子束的第一侧和与第一侧相对的第二侧 并且阵列装置包括孔阵列,其包括允许通过由粒子束形成的对应的光束元件的每个孔,以及包括与至少一个电极相关联的每个孔和通过CMOS层控制的电极的电极阵列。 电极是柱状的并且完全独立于多光束偏转器阵列装置的主体,并且电极通过接合连接部分连接到多光束偏转器阵列装置的主体的一侧。 版权所有(C)2011,JPO&INPIT
    • 7. 发明专利
    • Constant current multibeam patterning
    • 恒定电流多模式
    • JP2010123966A
    • 2010-06-03
    • JP2009262585
    • 2009-11-18
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • FRAGNER HEINRICHPLATZGUMMER ELMARBUERLI ADRIAN
    • H01L21/027H01J37/305
    • H01J37/3177B82Y10/00B82Y40/00Y10S430/143
    • PROBLEM TO BE SOLVED: To allow appropriate light-exposure of an image to be patterned onto a target. SOLUTION: The invention relates to a method for forming a pattern on a surface of a substrate as the target by utilizing beams of charged particles in a plurality of exposure steps. The beam is split into patterned beams and relative movement is generated between the substrate and a pattern defining means. As a result, the patterned particle beams effectively move from one end to the other end over the entire surface of the substrate to expose image elements on the substrate surface in each exposing step. The image elements on the target are exposed to beamlets a plurality of times, namely several times during the plurality of exposure steps in accordance with a specific sequence. During exposing the pattern, the sequence of image element exposure steps is arranged non-linearly according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variation in the optical column of the multibeam exposure apparatus. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:允许将图像适当地曝光到目标上。 解决方案:本发明涉及通过利用多个曝光步骤中的带电粒子束在作为靶的基板的表面上形成图案的方法。 光束被分裂为图案化的光束,并且在衬底和图案限定装置之间产生相对运动。 结果,图案化的粒子束在衬底的整个表面上有效地从一端移动到另一端,以在每个暴露步骤中露出衬底表面上的图像元素。 目标上的图像元素多次暴露于子束,即根据特定序列在多个曝光步骤期间多次。 在曝光图案期间,根据从一个曝光步骤到随后的曝光步骤的特定规则,图像元素曝光步骤的顺序被非线性排列,以便减少多光束曝光设备的光学柱中的电流变化。 版权所有(C)2010,JPO&INPIT
    • 8. 发明专利
    • 補正プレートを有する荷電粒子多重ビーム装置
    • 具有校正板的充电颗粒多光束装置
    • JP2015056668A
    • 2015-03-23
    • JP2014183985
    • 2014-09-10
    • アイエムエス ナノファブリケーション アーゲーIms Nanofabrication Agアイエムエス ナノファブリケーション アーゲー
    • PLATZGUMMER ELMAR
    • H01L21/027H01J37/305
    • H01J37/3177H01J37/045H01J37/1472H01J2237/0435H01J2237/1501H01J2237/30455
    • 【課題】荷電粒子多重ビーム処理又は検査装置用パターン画定デバイス(7)の提供。【解決手段】本デバイス(7)は、ビームレットをブランキングさせる開口アレイフィールドを有する偏向アレイデバイス(52)を備える。偏向アレイデバイスは、各開口部(520)に対応し、作動時に、開口部を通過するビームレットを公称経路から偏向させる静電電極(522、523、502)を有する偏向デバイス(521、501)を備える。一以上の偏向デバイス(501)に欠陥がありビームレット(b’)を偏向できない。非偏向ビームレット(b’)を補正するため、本デバイス(7)は、機能している偏向デバイス(521)からビームレットを通過させる開口部(70)と、偏向ビームレット(b’)の公称経路に沿ったデバイス(7)の下流への伝播を防止する妨害デバイス(71、74)とを有するフィルタリングデバイス(53)を備える。【選択図】図6B
    • 要解决的问题:提供一种用于带电粒子多光束处理或检查装置的图案定义装置(7)。解决方案:图案定义装置(7)包括具有孔径阵列场的偏转阵列装置(52) 消隐子束。 偏转阵列装置包括偏转装置(521和501),每个偏转装置分别与相应的开口520相关联,并且包括静电电极522,523和502,用于当被激活时偏转来自它们的标称路径的开口的子束。 如果一个或多个偏转装置(501)有缺陷,则小梁(b')不能被偏转。 为了校正非偏转小梁(b'),图案定义装置(7)包括过滤装置(53),其具有允许来自操作偏转装置(521)和阻塞装置(52)的子束通过的开口(70) 71和74),用于防止未偏转的子束(b')沿其标称路径传播到图案定义装置(7)的下游。
    • 10. 发明专利
    • Particle-beam apparatus with improved wien-type filter
    • 具有改进的WIEN型过滤器的颗粒光束装置
    • JP2008159584A
    • 2008-07-10
    • JP2007320692
    • 2007-12-12
    • Ims Nanofabrication Agアイエムエス ナノファブリケーション エイジー
    • PLATZGUMMER ELMAR
    • H01J37/05H01J37/317
    • H01J37/05B82Y10/00B82Y40/00H01J37/3174H01J2237/0435H01J2237/057
    • PROBLEM TO BE SOLVED: To improve a particle filter apparatus to specifically select the desired particle species (the "nominal species") with reduced overall complexity and improved life time of each beam absorbing element.
      SOLUTION: A pattern is projected onto a target through a projection system by a beam of highly energetic charged particles of largely a species of a nominal mass having a nominal kinetic energy. To generate the beam, a particle source 11, a velocity-dependent deflector 32 and an illumination optical system are provided. The velocity-dependent deflecting means 32 comprises a transversal dipole electrical field and/or a transversal dipole magnetic field acting on the particles to cause the deviation of a particle path with respect to the path of the nominal species which is dependent on the velocity of the particles.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了改进颗粒过滤装置以特别选择期望的颗粒物种(“标称物种”),降低总体复杂性并改善每个光束吸收元件的使用寿命。 解决方案:通过投影系统将图案投射到目标物上,该束通过大量具有标称质量的具有标称动能的物质的高能带电粒子束。 为了产生光束,提供了粒子源11,与速度相关的偏转器32和照明光学系统。 速度依赖偏转装置32包括横向偶极电场和/或作用在颗粒上的横向偶极子磁场,以引起相对于标称物质的路径的粒子路径的偏离,这取决于速度 粒子。 版权所有(C)2008,JPO&INPIT