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1. 发明专利

JP2007243212A Semiconductor device and power converter using it 审中-公开
标题翻译：半导体器件和功率转换器
公开(公告)号：JP2007243212A
公开(公告)日：2007-09-20
申请号：JP2007117928
申请日：2007-04-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MUTSUHIRO , KOYAMA KAZUHIRO , NISHIMURA YOSHITAKA , SAITO KATSUAKI , MASUDA KOTARO , KONO YASUHIKO
IPC分类号： H01L29/78 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To achieve both reduction of losses of semiconductor switching elements and securing of short circuit durability of a power converter using the element. SOLUTION: The semiconductor switching element has an emitter structure which accumulates electric charges on the emitter side and realizes high conductivity, and an IGBT structure with a low implanted p-layer which realizes low switching losses on the collector side. The maximum value of carrier concentration in the p-layer on the collector side is 10 to 100 times larger than that of an n-layer adjacent to the p-layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：实现半导体开关元件的损耗的降低和确保使用该元件的功率转换器的短路耐久性。解决方案：半导体开关元件具有在发射极侧积聚电荷并实现高导电性的发射极结构以及具有低注入p层的IGBT结构，其在集电极侧实现低开关损耗。集电极侧的p层的载流子浓度的最大值比与p层相邻的n层的载流子浓度的最大值大10倍〜100倍。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2003347549A Semiconductor device and power conversion equipment using the same 审中-公开
标题翻译：使用相同的半导体器件和功率转换器件
公开(公告)号：JP2003347549A
公开(公告)日：2003-12-05
申请号：JP2002158510
申请日：2002-05-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MUTSUHIRO , KOYAMA KAZUHIRO , NISHIMURA YOSHITAKA , SAITO KATSUAKI , MASUDA KOTARO , KONO YASUHIKO
IPC分类号： H01L29/786 , H01L29/739 , H01L29/78 , H02M7/5387
摘要： PROBLEM TO BE SOLVED: To reduce a loss of a semiconductor switching element and to secure a short circuit bearing amount of power conversion equipment using the element. SOLUTION: In the semiconductor switching element, an emitter structure where a charge is accumulated and conduction can be made high is given on an emitter side and an IGBT structure in which the switching loss can be reduced and which has a p-layer of low injection is given on a collector side. A maximum value of carrier concentration in the p-layer on the collector side is 10 to 100 times as much as that of an n-layer adjacent to the p-layer. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：减少半导体开关元件的损耗并确保使用该元件的电力转换设备的短路承载量。解决方案：在半导体开关元件中，在发射极侧和在其中可以减小开关损耗的具有p层的IGBT结构中给出电荷积聚和导通的发射极结构，在集电器侧给出低注入。集电极侧的p层的载流子浓度的最大值为与p层相邻的n层的载流子浓度的最大值。版权所有（C）2004，JPO

3. 发明专利

JP2013012560A Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：JP2013012560A
公开(公告)日：2013-01-17
申请号：JP2011143728
申请日：2011-06-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： AZUMA KATSUNORI , YASUDA KENTARO , FUJITA TAKAHIRO , SAITO KATSUAKI , KOIKE YOSHIHIKO , HIYOSHI MICHIAKI
IPC分类号： H01L25/07 , H01L23/48 , H01L25/18 , H02M1/00 , H02M7/48
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45124 , H01L2224/45147 , H01L2224/48137 , H01L2224/48139 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49505 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor module which can reduce generation of a voltage oscillation causing electromagnetic interference and the like.SOLUTION: A power semiconductor module comprises: semiconductor switching elements 50, 50' such as IGBT mounted on a plurality of insulating substrates 20, 20', respectively; and main electrodes 52, 52' of the respective semiconductor switching elements 50, 50' which are electrically connected by a conductor member 45. Accordingly, generation of a resonance voltage caused by junction capacitance and parasitic inductance of the semiconductor switching elements can be suppressed.
摘要翻译：解决的问题：提供能够减少产生电磁干扰等的电压振荡的功率半导体模块。解决方案：功率半导体模块包括：分别安装在多个绝缘基板20,20'上的诸如IGBT的半导体开关元件50,50'; 以及通过导体构件45电连接的各半导体开关元件50,50'的主电极52,52'。因此，可以抑制由半导体开关元件的结电容和寄生电感引起的谐振电压的产生。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011066171A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011066171A
公开(公告)日：2011-03-31
申请号：JP2009215133
申请日：2009-09-17
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHINAGAWA NAOTSUGU , SAITO KATSUAKI , SAEKI TAKAHIRO , YASUDA KENTARO
IPC分类号： H01L29/861 , H01L21/329 , H01L29/06 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element for achieving a stable withstand voltage without performing neutron emission. SOLUTION: This semiconductor device includes: a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed from one-side surface of the first semiconductor region; a second conductivity type third semiconductor region formed to surround the second semiconductor region and extending from the one-side surface of the first semiconductor region; a first conductivity type fourth semiconductor region formed to surround the third semiconductor region and extending from the one-side surface of the first semiconductor region; a first conductivity type fifth semiconductor region extending to one-side main surface of the first semiconductor region without affecting the second, third and fourth semiconductor regions extending to the one-side main surface of the first conductivity type first semiconductor region; and a first conductivity type sixth semiconductor region extending from the other-side surface of the first semiconductor region. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在不进行中子发射的情况下实现稳定的耐受电压的半导体元件。解决方案：该半导体器件包括：第一导电类型的第一半导体区域; 由第一半导体区域的一侧表面形成的第二导电类型的第二半导体区域; 形成为包围第二半导体区域并从第一半导体区域的单面表面延伸的第二导电类型的第三半导体区域; 形成为包围第三半导体区域并从第一半导体区域的单面表面延伸的第一导电型第四半导体区域; 第一导电类型的第五半导体区域，其延伸到第一半导体区域的一侧主表面，而不影响延伸到第一导电类型的第一半导体区域的一侧主表面的第二，第三和第四半导体区域; 以及从第一半导体区域的另一侧表面延伸的第一导电类型的第六半导体区域。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2007329362A Power module 有权
标题翻译：电源模块
公开(公告)号：JP2007329362A
公开(公告)日：2007-12-20
申请号：JP2006160421
申请日：2006-06-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SOGA TASAO , KAWASE DAISUKE , SUZUKI KAZUHIRO , MORIZAKI HIDEKAZU , SAITO KATSUAKI
IPC分类号： H01L23/40 , H01L23/36
CPC分类号： H01L24/73 , H01L2224/0603 , H01L2224/2919 , H01L2224/32225 , H01L2224/45 , H01L2224/45124 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/48491 , H01L2224/48699 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/11 , H01L2224/45015
摘要： PROBLEM TO BE SOLVED: To solve the following problem: although Sn-3Ag-0.5Cu solder is widely used because Pb-free structure is required from environmental issues, the solder for post-processing of a power module is performed on large area substrate; and the Sn-3Ag-0.5Cu solder scarcely bringing about creep deformation upon the large deformation of the substrate accompanied by the warp thereof gives rise to the notable life reduction according to a temperature cycle and a TFT test. SOLUTION: The cracks that occurs in the solder can be prevented and delayed, and the crack developing speed can be reduced, by partially applying an epoxy-based resin having suitable physical properties onto the outermost periphery of the solder working as the starting point of the cracks to change the destruction mechanism. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了解决以下问题：尽管由于环境问题需要无铅结构，Sn-3Ag-0.5Cu焊料广泛使用，但用于后处理功率模块的焊料大量进行面积基材; 并且Sn-3Ag-0.5Cu焊料几乎不会在伴随着翘曲的基板的大变形时引起蠕变变形，从而根据温度循环和TFT测试引起显着的寿命降低。解决方案：可以防止和延迟焊料中发生的裂纹，通过将具有合适物理性能的环氧树脂部分施加到作为起动剂的焊料的最外周部上，可以减少裂纹展开速度点裂点改变破坏机制。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2005166854A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005166854A
公开(公告)日：2005-06-23
申请号：JP2003402360
申请日：2003-12-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOYODA YASUSHI , SAITO KATSUAKI
IPC分类号： H01L21/60
CPC分类号： H01L24/05 , H01L2224/04042 , H01L2224/05624 , H01L2224/45 , H01L2224/45124 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/4846 , H01L2224/48724 , H01L2224/49 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/85 , H01L2224/85148 , H01L2224/85205 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device high in resistance to surge current breakdown by avoiding the concentration of a current at a point where a wire joins electrodes formed on the semiconductor element surface. SOLUTION: In this semiconductor device, one metal wire is connected to semiconductor element surface electrodes at two or more locations, and the metal wire is linearly arranged between junctions along planes of the surface electrodes. In another example, one metal wire is connected to semiconductor element electrodes at one location. A junction length is 5-100 times a metal wire diameter, and the junction is linearly arranged along the planes of surface electrodes. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过避免线路接合形成在半导体元件表面上的电极的点处的电流的集中，来提供高抗冲击电流击穿的半导体器件。解决方案：在该半导体器件中，一个金属线在两个或更多个位置处连接到半导体元件表面电极，并且金属线线性地布置在沿着表面电极的平面的结之间。在另一示例中，一个金属线在一个位置连接到半导体元件电极。接合长度为金属线直径的5-100倍，并且接合部沿着表面电极的平面线性排列。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2003068979A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2003068979A
公开(公告)日：2003-03-07
申请号：JP2001258143
申请日：2001-08-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KUSHIMA TADAO , TSUYUNO ENJIYOU , SUZUKI KAZUHIRO , KODAMA HIRONORI , KAMOSHITA RIKUO , BANDO AKIRA , HIRAI TSUTOMU , SAITO KATSUAKI , KAWASE DAISUKE
IPC分类号： H01L23/28 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device which is kept high in dielectric strength, simple in structure, and inexpensive. SOLUTION: A case is composed of a case side wall 5 and a case bottom plate 4, an insulating board 1a provided with a front and a rear where a conductor 1b is formed respectively is bonded to the case bottom plate 4 with solder, and a Si chip 2 and an external extracting terminal 7 are bonded on one surface of the insulating board 1a by solder for the formation of a semiconductor device. The top surface of the case is sealed up with a sealing plate 8a which is provided with a gel agent inlet 8d and a protruding structure 8b which extracts out a external leading terminal 7. The protruding structure 8b is constituted extending downward to the sealing plate 8a. Gel agent 10 is made to fill up the case so as to reach the lower end of the projection of the structure 8B, and a cavity is formed extending from the top surface of the gel agent to the undersurface of the sealing plate 8a. A hole bored in the structure 8b is filled up with a hard resin so as to fix the external terminal, and the gel agent inlet 8d is filled up with a silicone rubber cap 13.
摘要翻译：要解决的问题：提供一种电介质强度高，结构简单，成本低廉的功率半导体器件。解决方案：壳体由壳体侧壁5和壳体底板4构成，设置有导体1b的前后的绝缘板1a分别用焊料接合到壳体底板4，并且 Si芯片2和外部提取端子7通过用于形成半导体器件的焊料接合在绝缘板1a的一个表面上。壳体的上表面用密封板8a密封，密封板8a设置有凝胶剂入口8d和从外部引出端子7抽出的突出结构8b。突出结构8b向下延伸到密封板8a 。凝胶剂10被填充到壳体的下端，从而形成从凝胶剂的顶表面延伸到密封板8a的下表面的空腔。在结构体8b中钻孔的孔用硬树脂填充以固定外部端子，并且凝胶剂入口8d填充有硅橡胶盖13。

8. 发明专利

JP2006253516A Power semiconductor device 审中-公开
标题翻译：功率半导体器件
公开(公告)号：JP2006253516A
公开(公告)日：2006-09-21
申请号：JP2005070255
申请日：2005-03-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOIKE YOSHIHIKO , TOYODA YASUSHI , SAITO KATSUAKI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L25/072 , H01L23/49861 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L2224/32225 , H01L2224/371 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a solder section connecting a terminal for a power semiconductor device and a circuit on an insulating substrate. SOLUTION: In the power semiconductor device, the thickness of a section joined with the metallic circuit on the insulating substrate at the terminal is thinner than those of other sections of the terminal through which a main current flows, and the section joined with the metallic circuit on the insulating substrate at the terminal is divided by slits, thus reducing a stress applied to the joining section. According to the power semiconductor device, since the reliability of a solder connecting section is improved and a wiring in a module can be shortened, a wiring resistance is lowered, and the inductance of the wiring can also be lowered. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提高连接功率半导体器件的端子和绝缘基板上的电路的焊接部分的可靠性。解决方案：在功率半导体器件中，端子处的绝缘基板上与金属电路接合的部分的厚度比主电流流过的端子的其它部分的厚度薄，并且部分与端子上的绝缘基板上的金属电路被狭缝分开，从而减小施加到接合部分的应力。根据功率半导体器件，由于焊料连接部的可靠性得到改善并且模块中的布线可以缩短，所以布线电阻降低，并且布线的电感也可以降低。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2017092789A 電力変換装置审中-公开
公开(公告)号：JP2017092789A
公开(公告)日：2017-05-25
申请号：JP2015222585
申请日：2015-11-13
申请人：株式会社日立製作所 , Hitachi Ltd , 株式会社日立パワーデバイス , Hitachi Power Semiconductor Device Ltd , 株式会社日立パワーデバイス
发明人： HORIUCHI KEISUKE , KAWASE DAISUKE , INABA MASAMITSU , SAITO KATSUAKI , ONDA KOHEI
IPC分类号： H03K17/08 , H02M7/48
摘要：【課題】高密度実装と高精度異常電流検出とを両立し、また、短絡検知と過電流検知とを互いに独立に実行する電力変換装置を提供する。【解決手段】以下の制御部を備えた電力変換装置とする。制御部は、端子の両方に対して互いに並列に接続される積分回路および増幅回路と、積分回路の出力側に接続される第1の比較器と、増幅回路の出力側に接続される第2の比較器とを備える。更に制御部は、第1の比較器がオンになった時点から期間t1の間は短絡検知を停止し、第1の比較器がオンになった時点から期間t1後に短絡検知を実行し、第2の比較器がオンになった時点から期間t1より長い期間t2の間は過電流検知を停止し、第2の比較器がオンになった時点から期間t2後に過電流検知を実行するよう構成される。【選択図】図1

10. 发明专利

JP2010109158A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2010109158A
公开(公告)日：2010-05-13
申请号：JP2008279838
申请日：2008-10-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KUSHIMA TAKAYUKI , SAITO KATSUAKI
IPC分类号： H01L23/34
CPC分类号： H01L24/73 , H01L2224/32225 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that efficiently dissipate heat using a bonding wire 9i. SOLUTION: The semiconductor device has a semiconductor chip 1a which draws a main current in a main electrode 11b, a support substrate 4 for heat dissipation which dissipates heat outside generated in the semiconductor chip 1a in which the main current flows, an insulating substrate 2 to conduct heat, being provided between the semiconductor chip 1a and the support substrate 4 for heat dissipation, a dummy conductor film 3d in which the main current does not flow, being provided on the insulating substrate 2, and being not connected to external lead terminals 7a-7d which perform input/output of current or voltage with outside, and a bonding wire 9i which connects the dummy conductor film 3d in which the main current does not flow, the main electrode 11b, and the dummy conductor film 3d. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用接合线9i有效地散热的半导体器件。解决方案：半导体器件具有在主电极11b中吸取主电流的半导体芯片1a，用于散发主要电流流过的半导体芯片1a中产生的外部散热的散热用支撑基板4，绝缘体在半导体芯片1a和用于散热的支撑基板4之间设置用于传导热量的基板2，设置在绝缘基板2上并且不连接到外部的虚设导体膜3d，其中主电流不流动与外部进行电流或电压的输入/输出的引线端子7a-7d以及连接未流过主电流的虚设导体膜3d，接合线9i，主电极11b和虚设导体膜3d。版权所有（C）2010，JPO＆INPIT

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