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1. 发明专利

JP2003068979A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2003068979A
公开(公告)日：2003-03-07
申请号：JP2001258143
申请日：2001-08-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KUSHIMA TADAO , TSUYUNO ENJIYOU , SUZUKI KAZUHIRO , KODAMA HIRONORI , KAMOSHITA RIKUO , BANDO AKIRA , HIRAI TSUTOMU , SAITO KATSUAKI , KAWASE DAISUKE
IPC分类号： H01L23/28 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device which is kept high in dielectric strength, simple in structure, and inexpensive. SOLUTION: A case is composed of a case side wall 5 and a case bottom plate 4, an insulating board 1a provided with a front and a rear where a conductor 1b is formed respectively is bonded to the case bottom plate 4 with solder, and a Si chip 2 and an external extracting terminal 7 are bonded on one surface of the insulating board 1a by solder for the formation of a semiconductor device. The top surface of the case is sealed up with a sealing plate 8a which is provided with a gel agent inlet 8d and a protruding structure 8b which extracts out a external leading terminal 7. The protruding structure 8b is constituted extending downward to the sealing plate 8a. Gel agent 10 is made to fill up the case so as to reach the lower end of the projection of the structure 8B, and a cavity is formed extending from the top surface of the gel agent to the undersurface of the sealing plate 8a. A hole bored in the structure 8b is filled up with a hard resin so as to fix the external terminal, and the gel agent inlet 8d is filled up with a silicone rubber cap 13.
摘要翻译：要解决的问题：提供一种电介质强度高，结构简单，成本低廉的功率半导体器件。解决方案：壳体由壳体侧壁5和壳体底板4构成，设置有导体1b的前后的绝缘板1a分别用焊料接合到壳体底板4，并且 Si芯片2和外部提取端子7通过用于形成半导体器件的焊料接合在绝缘板1a的一个表面上。壳体的上表面用密封板8a密封，密封板8a设置有凝胶剂入口8d和从外部引出端子7抽出的突出结构8b。突出结构8b向下延伸到密封板8a 。凝胶剂10被填充到壳体的下端，从而形成从凝胶剂的顶表面延伸到密封板8a的下表面的空腔。在结构体8b中钻孔的孔用硬树脂填充以固定外部端子，并且凝胶剂入口8d填充有硅橡胶盖13。

2. 发明专利

JP2003023223A Metal substrate for circuit and semiconductor device 审中-公开
标题翻译：用于电路和半导体器件的金属衬底
公开(公告)号：JP2003023223A
公开(公告)日：2003-01-24
申请号：JP2001207201
申请日：2001-07-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SUZUKI KAZUHIRO , BANDO AKIRA , KAMOSHITA RIKUO , HIRAI TSUTOMU
IPC分类号： H05K1/05 , H01L23/12 , H01L23/36 , H01L25/07 , H01L25/18 , H05K1/02
CPC分类号： H01L2224/83192 , H01L2224/92247 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a metal substrate for resin insulation circuit advantageous for ensuring heat resistance and a semiconductor device using that metal substrate for circuit. SOLUTION: In the metal substrate for circuit, metal plates (referred to second metal plate) are provided with an electric circuit pattern are laid in layer on a first metal plate through an insulation layer. A resin layer touching the second metal plate covers the side face of the metal plate at least partially, the resin layer touching the first metal plate contains silicone rubber and/or fluororubber component, and the resin layer touching the second metal plate contains one or more than one kind of rubber component selected from butadiene based rubber, nitrile rubber, acrylic rubber, acrylonitrile rubber, styrene- butadiene based rubber, ethylene-propylene based rubber, and urethane based rubber.
摘要翻译：要解决的问题：提供有利于确保耐热性的树脂绝缘电路用金属基板和使用该电路用金属基板的半导体装置。解决方案：在电路用金属基板中，通过绝缘层将金属板（称为第二金属板）设置在第一金属板上的电路图案。接触第二金属板的树脂层至少部分地覆盖金属板的侧面，与第一金属板接触的树脂层包含硅橡胶和/或氟橡胶部件，并且与第二金属板接触的树脂层包含一个或多个比例从丁二烯橡胶，丁腈橡胶，丙烯酸橡胶，丙烯腈橡胶，苯乙烯 - 丁二烯基橡胶，乙烯 - 丙烯基橡胶和氨基甲酸酯基橡胶中选择的一种橡胶组分。

3. 发明专利

JP2003303940A Insulation circuit board and semiconductor device 审中-公开
标题翻译：绝缘电路板和半导体器件
公开(公告)号：JP2003303940A
公开(公告)日：2003-10-24
申请号：JP2002109868
申请日：2002-04-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAWASE DAISUKE , SUZUKI KAZUHIRO , BANDO AKIRA , HIRAI TSUTOMU , KAMOSHITA RIKUO , SAITO NAOTO , SASAKI KOJI
IPC分类号： H05K1/05 , H01L23/12 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/49111 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an insulation circuit board, having a small heat resistance and high reliability, and a semiconductor device employing the board. SOLUTION: The insulation circuit board is obtained, by laminating a first metal plate and a second metal plate or a conductive metal plate formed on the first metal plate through two layers of resin insulation layers so as to have the shape of an electric circuit pattern. A first resin layer, contacted with the first metal base board, is a resin layer, filled with 50 wt.% or more of filler having a thermal conductivity of 20 W/m K or higher and having a thickness, larger than 20 μm; while the filling rate of the filler of the second resin layer contacted with the second metal plate is smaller than the filling rate of filler of the first resin layer, and the thickness of the same is smaller than 5 μm. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有小的耐热性和高可靠性的绝缘电路板以及采用该板的半导体器件。解决方案：通过层压通过两层树脂绝缘层在第一金属板上形成的第一金属板和第二金属板或导电金属板层叠绝缘电路板，使其具有电电路图案。与第一金属基板接触的第一树脂层是填充有导热率为20W / m·K以上且厚度大于20μm的50重量％以上的填料的树脂层; 而与第二金属板接触的第二树脂层的填料的填充率小于第一树脂层的填料的填充率，并且其厚度小于5μm。版权所有（C）2004，JPO

4. 发明专利

JP2000343143A DEVICE AND METHOD OF MANUFACTURING METALLIC BASE PLATE FOR CIRCUIT 失效
公开(公告)号：JP2000343143A
公开(公告)日：2000-12-12
申请号：JP15112599
申请日：1999-05-31
申请人： HITACHI LTD
发明人： SUZUKI KAZUHIRO , BANDO AKIRA , KAMOSHITA RIKUO , HIRAI TSUTOMU , IWANAKA MITSUFUMI , KOBAYASHI TOSHIYUKI , SAITO NAOTO , SASAKI KOJI
IPC分类号： B21D28/00 , B21D43/00
摘要： PROBLEM TO BE SOLVED: To obtain a circuit pattern base plate of large thickness by pressing an upper stage set being arranged oppositely to a bottom stage set, on which a lead frame is to be mounted, for moving it in the bottom stage direction and by pressure fastening the lead frame so as to cut its unnecessary portion. SOLUTION: A bottom stage 4 is moved from a position directly below the upper stage 2 and a working element is mounted on the bottom stage 4 with an usage of position matching pins 6. The working element is absorbed from a vacuum absorption hole 5 of a bottom cutting blade 3 and is fastened. The bottom stage 4 is moved to a position directly below the upper stage with a rail 11 for pressing and fastening the working element on the bottom cutting blade 3 by lowering the upper stage 2. An upper cutting blade 1 of the upper stage 4 is further lowered for engaging with the bottom cutting blade 3 so that the working element on the bottom cutting blade 3 and the working element on the bottom stage 4 are cut/separated. The bottom stage 4 is pulled out by rising the upper stage 2 so that the necessary circuit pattern alone is left remained on the bottom cutting blade 3.

5. 发明专利

JPH06104027A SLEEVE MATERIAL FOR CRIMPING AND CONNECTION BODY 失效
公开(公告)号：JPH06104027A
公开(公告)日：1994-04-15
申请号：JP24755192
申请日：1992-09-17
申请人： HITACHI LTD
发明人： FUKUMAKI TAKASHI , KAMOSHITA RIKUO , SATOU CHIE , NAKAMURA MITSUO , SAITO TOSHIYUKI
IPC分类号： H01R4/68 , H01R4/70
摘要： PURPOSE:To utilize a connection part for a product for a long period of time in a stable way, since it is of large critical current value, and can be kept in a permanent current mode, by improving a filling rate and making superconducting filaments into contact with one another more closely. CONSTITUTION:For Cu of a stabilizer for connection, a sleeve material adjusted into the outer diameter of 9mm, the hole diameter of 2.2mm, and the entire Hv of approximately 40, is used. Superconducting wires 7, 8 to be connected are of Nb-Ti, and have the diameter of 1.0mm, while 24 filaments 9, 10 of the diameter of 0.078mm are used, and 1060 auxiliary connection filaments 11 of the diameter 0.035mm are used. After the filaments 11 are provided around the filaments 9, 10 in such a way that the filaments 9, 10 are surrounded by them, they are pressed, and the thickness of the Cu sleeve is molded into 6.4mm.

6. 发明专利

JPH03254079A CONNECTING METHOD FOR SUPERCONDUCTIVE WIRE 失效
公开(公告)号：JPH03254079A
公开(公告)日：1991-11-13
申请号：JP4930390
申请日：1990-03-02
申请人： HITACHI LTD
发明人： SATOU CHIE , SAKAMOTO MASAHIKO , OKAMURA HISANOBU , AKIYAMA HIROSHI , KAMOSHITA RIKUO , SHINOHARA HIDEKI , FUNAMOTO TAKAO
IPC分类号： H01R4/68
摘要： PURPOSE:To accomplish connection of two superconductive wires with stable connection characteristics by providing a conical groove from the cross-section side at the connection ends of the superconductive wires, and fitting a joint member of superconductive material in this groove, wherein the joint member shall assume the same shape as the groove. CONSTITUTION:Each of superconductive wires 1, 2 is formed by embedding a plurality of superconductive filaments of NbTi in a stabilizing material made of Cu. From the cross-section side a conical groove is provided at the connection ends of these superconductive wires 1, 2 by a mechanical means. A joint member 3 is fabricated from NbTi as having the same dimensions as the conical groove, for ex. the bottom area, height, etc. Then the connection ends of the wires 1, 2 are butted together, and between the joint member 3 is arranged, and the joint part is wrapped with Cu foil and attached fast by pressure.

7. 发明专利

JPH02102174A CERAMIC BONDING METHOD 失效
公开(公告)号：JPH02102174A
公开(公告)日：1990-04-13
申请号：JP25473588
申请日：1988-10-12
申请人： HITACHI LTD
发明人： OKAMURA HISANOBU , KAMOSHITA RIKUO , AKIYAMA HIROSHI , SAKAMOTO MASAHIKO , SHINOHARA HIDEKI
IPC分类号： B23K1/19 , C04B37/00 , C04B37/02
摘要： PURPOSE:To accomplish the title bonding in high quality even under normal pressure, in an atmosphere consisting of a combination of N2 gas with an inert gas such as Ar through the active metal process. CONSTITUTION:The atmosphere within a furnace to (A) metallize the surface of a ceramic with a soldering material consisting of Ag, Cu, Ni or alloy therefrom containing at least one kind of metal selected from active metals Ti, Zr and Hf or (B) bond said surface with another member, is made up of a mixed gas prepared by adding at least one kind of gas selected from Ar, He and Ne to N2 gas. Thus, respective advantages, i.e., wettability of Ar gas, etc., and no generation of blow holes due to N2 gas, will be utilized, leading to formation of high-quality joint. According to the above method, the objective bonding can be accomplished at lower cost than the case with pressure reduction within the furnace or using, e.g., Ar gas alone.

8. 发明专利

JPH01239075A COMPLEX OF SILICON CARBIDE BASED CERAMICS AND PRODUCTION THEREOF 失效
公开(公告)号：JPH01239075A
公开(公告)日：1989-09-25
申请号：JP6191688
申请日：1988-03-17
申请人： HITACHI LTD
发明人： OKAMURA HISANOBU , SAKAMOTO MASAHIKO , AKIYAMA HIROSHI , KAMOSHITA RIKUO , FUNAMOTO TAKAO
IPC分类号： C04B37/00 , C04B41/90
摘要： PURPOSE:To obtain a silicon carbide based ceramic complex having high reliability, by arranging a specific solder material on the surface of silicon carbide based ceramics through a Cr layer and forming a solder material layer or heating. CONSTITUTION:Cr layer is formed on the surface of silicon carbide based ceramics and a solder material containing 0.5-70wt.% of at least one kind of element among the group IVa of periodic table is arranged thereon and heated to the temperature more than melting point of the solder material to form a solder material layer. A method for forming Cr layer onto the ceramic surface is carried out by physical means such as deposition, sputtering, CVD, etc. and chemical means such as chemical plating. The thickness of the formed Cr layer is preferably 0.5-10mu, because when the thickness is

9. 发明专利

JPS6370545A SEMICONDUCTOR PACKAGE 失效
公开(公告)号：JPS6370545A
公开(公告)日：1988-03-30
申请号：JP21392986
申请日：1986-09-12
申请人： HITACHI LTD
发明人： FUKUMAKI TAKASHI , KAMOSHITA RIKUO , OKAMURA HISANOBU , MATSUZAKA KYO
IPC分类号： C04B37/02 , B23K1/19 , H01L23/08 , H01L23/10
摘要： PURPOSE:To make significantly free the selection of structure of a semiconductor package using an Al nitride ceramic sintered body and to make possible a direct bonding without previously metallizing, to enhance the reliability of an assembled part and moreover, to improve cooling characteristics by a method wherein an electrically insulating and non-oxide ceramic sintered body and its adjacent member are bonded together with a brazing metal containing at least one kind of Ti or Zr. CONSTITUTION:A high-integration density LSI chip 2 is connected to a multilayer circuit substrate 1 through solder balls 3. Heat, which passes through a high-heat conduction and electrically insulating AlN ceramic fin 7 connected on the rear of the Si chip and is generated in the Si chip 2, is transmitted to upper fins 6 being formed integrally with an AlN cap 5 of the same material as that of the fins 6. A pastelike brazing metal obtainable by adding Ti of 3% to 97% of alloy powder constituted by Ag of 72 wt. % and Cu of 28 wt. % is installed between the cap 5 and an AlN ceramic frame 4 in a thickness of 100 mum, heated and the cap and the frame are directly bonded together. The Ti-added soldered part is not quite affected by soldering. Accordingly, a semiconductor package having the sound bonded part and superior cooling characteristics can be obtained.

10. 发明专利

JPS6255958B2 失效
公开(公告)号：JPS6255958B2
公开(公告)日：1987-11-24
申请号：JP3650281
申请日：1981-03-16
申请人： HITACHI LTD
发明人： OKAMURA HISANOBU , KAMOSHITA RIKUO , JINBO RYUTARO , KINO HIROTOSHI , NAKASAKI TAKAMITSU
IPC分类号： G01B17/00 , B23K15/00 , B23K15/02

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