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1. 发明专利

JP2013172112A Semiconductor device and inverter device using the same 有权
标题翻译：使用其的半导体器件和反相器器件
公开(公告)号：JP2013172112A
公开(公告)日：2013-09-02
申请号：JP2012036927
申请日：2012-02-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ANDO TAKUJI , AZUMA KATSUNORI , MORI MUTSUHIRO
IPC分类号： H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits peeling of a terminal joint part even if an ambient temperature of the semiconductor device rises due to an external factor.SOLUTION: A semiconductor device 300 includes: multiple semiconductor modules 200a, 200b; a first housing 108 fixing the multiple semiconductor modules 200a, 200b; and a lid 120 mounted on the housing 108. The multiple semiconductor modules 200a, 200b include metal bases, ceramic plates respectively mounted on the metal bases, terminals 111a, 111b, 112a, 112b, 115 to 117 provided on the ceramic plates and connected with wiring patterns, and semiconductor elements connected with the wiring patterns. The lid 108 directly contacts with protruding parts provided at the terminals 111a, 111b, 112a, 112b, 115 to 117 and is mounted thereon.
摘要翻译：要解决的问题：为了提供即使半导体器件的环境温度由于外部因素而上升，也抑制端子接头部分的剥离的半导体器件。解决方案：半导体器件300包括：多个半导体模块200a，200b; 固定多个半导体模块200a，200b的第一壳体108; 以及安装在壳体108上的盖120.多个半导体模块200a，200b包括金属基底，分别安装在金属基底上的陶瓷板，设置在陶瓷板上的端子111a，111b，112a，112b，115至117，并与布线图案和与布线图案相连的半导体元件。盖108直接与设置在端子111a，111b，112a，112b，115至117处的突出部分接触并安装在其上。

2. 发明专利

JP2013168671A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013168671A
公开(公告)日：2013-08-29
申请号：JP2013092791
申请日：2013-04-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MUTSUHIRO , ARAI TAIKA
IPC分类号： H01L29/78 , H01L21/336 , H01L29/739 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a loss without degrading breakdown voltage.SOLUTION: In a semiconductor device, a fourth semiconductor region 122 of a first conductivity type is provided in a part of a third semiconductor region 110 of a second conductivity type. Thus, a breakdown voltage is improved when a sheet carrier concentration in a fifth semiconductor region 151 is increased.
摘要翻译：要解决的问题：提供能够降低损耗而不降低击穿电压的半导体器件。解决方案：在半导体器件中，第一导电类型的第四半导体区域122设置在第三半导体区域110的一部分中第二导电类型。因此，当第五半导体区域151中的片载体浓度增加时，击穿电压得到改善。

3. 发明专利

JP2011078187A Semiconductor device and power converter using thereof 有权
标题翻译：半导体器件和功率转换器
公开(公告)号：JP2011078187A
公开(公告)日：2011-04-14
申请号：JP2009225914
申请日：2009-09-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MUTSUHIRO
IPC分类号： H02M7/48 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L27/0664 , H01L29/7391 , H01L29/7395
摘要： PROBLEM TO BE SOLVED: To solve the problem that a flywheel diode using a conventional pn junction used for a power converter is large in conduction loss due to a large forward voltage since its life time is controlled to be short, and is further large in switching loss due to a large reverse recovery current at reverse recovery, resulting in a large loss in the power converter. SOLUTION: A semiconductor device lets a current flow via a pn diode which is small in forward voltage when the forward current flows, and reversely recovers it via a Schottky diode which is small in reverse recovery current at reverse recovery. Moreover, it has a switching means between the pn diode and the Schottky diode. It can reduce a loss at reverse recovery by lowering the forward voltage of a flywheel diode, therefore a semiconductor device with a small loss and further a power converter with the same can be provided. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了解决由于其正常电压由于其寿命被控制为短而使用用于功率转换器的常规pn结的续流二极管的传导损耗大的问题，并且更进一步由于反向恢复时的大的反向恢复电流导致开关损耗大，导致功率转换器的损耗大。解决方案：半导体器件通过正向电流流动时正向电压小的pn二极管产生电流，并通过反向恢复电流反向恢复电流小的肖特基二极管反向恢复电流。此外，它在pn二极管和肖特基二极管之间具有开关装置。通过降低续流二极管的正向电压，可以减少反向恢复时的损耗，因此可以提供具有小损耗的半导体器件和具有相同功率转换器的功率转换器。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009064036A Plasma display apparatus 审中-公开
标题翻译：等离子显示设备
公开(公告)号：JP2009064036A
公开(公告)日：2009-03-26
申请号：JP2008290930
申请日：2008-11-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OSAWA MICHITAKA , OHIRA HIROSHI , ONOZAWA MAKOTO , INOUE KOICHI , MORI MUTSUHIRO , IIZUKA MAMORU
IPC分类号： G09G3/20 , G09F9/00 , G09G3/296
摘要： PROBLEM TO BE SOLVED: To provide a plasma display apparatus in which influence of a fast and large current flowing in an output circuit are decreased.
SOLUTION: The display device includes a plasma display panel, a substrate having an insulating film and a wiring pattern provided on the insulating film, and a drive circuit mounted on the wiring pattern and outputting a driving pulse of the plasma display panel, wherein the drive circuit includes an IGBT (insulated gate bipolar transistor).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种其中在输出电路中流动的快速和大电流的影响减小的等离子体显示装置。解决方案：显示装置包括等离子体显示面板，具有绝缘膜的基板和设置在绝缘膜上的布线图案，以及安装在布线图案上并输出等离子体显示面板的驱动脉冲的驱动电路，其中驱动电路包括IGBT（绝缘栅双极晶体管）。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2004096051A Semiconductor device and power conversion apparatus using the same 有权
标题翻译：使用相同的半导体器件和功率转换器
公开(公告)号：JP2004096051A
公开(公告)日：2004-03-25
申请号：JP2002258880
申请日：2002-09-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOYAMA KAZUHIRO , MORI MUTSUHIRO , KOBAYASHI HIDEO , SAITO KATSUAKI , NISHIMURA YOSHITAKA
IPC分类号： H01L29/78 , H01L21/336 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To obtain an IGBT having a large safety operation region, a high breakdown voltage and a low ON voltage.
SOLUTION: The IGBT comprises at least a p+n-pn+ structure from the collector side to the emitter side, and an n layer with higher concentration than an n-layer between the n-layer and a p-layer. Therein an n layer with concentration further higher than the n layer between the n-layer and the p-layer. An avalanche occurs in the n layer with high concentration, and thereby the safety operation region is enlarged.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了获得具有大的安全操作区域，高击穿电压和低导通电压的IGBT。解决方案：IGBT至少包括从集电极侧到发射极侧的p + n-pn +结构，以及在n层和p层之间具有比n层高的浓度的n层。其中n层具有比n层和p层之间的n层更高的浓度。在高浓度的n层发生雪崩，从而安全操作区域扩大。版权所有（C）2004，JPO

6. 发明专利

JP2004064042A Solar cell device, method of manufacturing the same, metal plate for solar cell device, and power generation plant 审中-公开
公开(公告)号：JP2004064042A
公开(公告)日：2004-02-26
申请号：JP2002370018
申请日：2002-12-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KUBO SEIJI , SAWAI YUICHI , NAITO TAKASHI , MORI MUTSUHIRO , HATANO MUTSUKO
IPC分类号： H01L31/04
CPC分类号： H01L31/03921 , H01L25/043 , H01L31/022433 , H01L31/046 , H01L31/202 , H01L2924/0002 , Y02E10/50 , Y02P70/521 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent the occurrence of the peeling, warping, crack, etc. of thin films due to a temperature change such as heating and cooling in a process of manufacturing a solar panel with a large area having high efficiency in photoelectric conversion and excellent economical properties, and eliminate the occurrence of failure in a production process. SOLUTION: This device comprises a metal substrate 8, a projection 9 that is provided on the metal substrate 8, one silicon layer 3 (p-type a-Si layer) that is formed in contact with a part of one surface of the metal substrate 8, the other silicon layer 4 (n-type a-Si layer) that is formed on the entire surface on the silicon layer, a plurality of electrodes 5 that are formed in contact with the other silicon layer, external terminals 6 and 7 that are formed on the metal substrate 8, and the external terminals 6 and 7 that are formed in contact with the electrodes 5. COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2003070256A Method and apparatus for operating mos rectifier for alternator 有权
标题翻译：操作MOS整流器的方法和装置
公开(公告)号：JP2003070256A
公开(公告)日：2003-03-07
申请号：JP2001259122
申请日：2001-08-29
申请人： Hitachi Car Eng Co Ltd , Hitachi Ltd , 株式会社日立カーエンジニアリング , 株式会社日立製作所
发明人： IWAMURA MASAHIRO , MORI MUTSUHIRO , KANAZAWA HIROYUKI , MASUMOTO MASATOSHI , HIKITA SAKAE
IPC分类号： H02J7/14 , H02M7/12 , H02M7/219
CPC分类号： Y02T10/92
摘要： PROBLEM TO BE SOLVED: To provide a MOS-type rectifier operating method which has solved problems caused by bidirectional conduction properties inherent in MOSFETs and a recovery current of parasitic diode.
SOLUTION: An operating circuit for the MOSFETs of a MOS rectifier type alternator is comprised of a rectifier input/output voltage taking-in portion, an on/off determining circuit portion, an on/off decision logic circuit portion, an output buffer portion, a diagnosing portion, and others.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种MOS解决方案，其解决了MOSFET中固有的双向导通特性和寄生二极管的恢复电流引起的问题。解决方案：用于MOS整流器型交流发电机的MOSFET的工作电路包括整流器输入/输出电压接收部分，开/关确定电路部分，开/关判定逻辑电路部分，输出缓冲器部分，诊断部分等。

8. 发明专利

JP2017078927A 電力変換装置审中-公开
公开(公告)号：JP2017078927A
公开(公告)日：2017-04-27
申请号：JP2015206056
申请日：2015-10-20
申请人：株式会社日立製作所 , Hitachi Ltd , 株式会社日立パワーデバイス , Hitachi Power Semiconductor Device Ltd , 株式会社日立パワーデバイス
发明人： TAKEUCHI YUJIRO , MORI MUTSUHIRO
IPC分类号： G05F1/56 , H01L29/739 , H01L29/78 , H02M7/48
CPC分类号： H01L29/739 , H01L29/78 , H02M1/08 , H02M7/48 , H03K17/16 , H03K17/567 , Y02B70/1483
摘要：【課題】高耐圧性と低リカバリー損失の特性を有するSiC−SBDを用いながら、電圧・電流の振動を抑制できるようにした電力変換装置を提供する。【解決手段】スイッチング素子101と、前記スイッチング素子101に対して直列に接続された整流素子102と、を備える電力変換装置100であって、前記電力変換装置100は、前記スイッチング素子101と前記整流素子102との接続点に外部の電気的負荷103が接続される構成を有し、前記スイッチング素子101は、第1のゲート端子105と第2のゲート端子106とを有する絶縁ゲート型半導体素子で構成され、前記整流素子102は、半導体基体として炭化ケイ素を用いたショットキー接合を有するダイオードで構成され、前記第1のゲート端子105と前記第2のゲート端子106に、それぞれ互いに異なる駆動信号を印加する。【選択図】図1

9. 发明专利

JP2013098425A Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：JP2013098425A
公开(公告)日：2013-05-20
申请号：JP2011241405
申请日：2011-11-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HORIUCHI KEISUKE , NISHIHARA ATSUO , MORI MUTSUHIRO , NEMOTO YASUHIRO , AZUMA KATSUNORI
IPC分类号： H01L25/07 , H01L21/60 , H01L25/18 , H02M7/48
CPC分类号： H02M7/003 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05599 , H01L2224/4809 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4846 , H01L2224/48472 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/30107 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： PROBLEM TO BE SOLVED: To enable compact mounting of, for example, 12 arms on a single semiconductor power module, to dispose a DC terminal and an AC terminal on a module end face, and to maintain low inductance of a power circuit.SOLUTION: On one insulation substrate 108, two pairs of upper arms (100, 104 and 102, 106) are disposed on the upper right and left of the insulation substrate, and two pairs of lower arms (101, 105 and 103, 107) are disposed on the lower right and left of the insulation substrate. As wiring patterns on the insulation substrate, the two pairs of upper arms are mounted on a first wiring pattern C01, and the two pairs of lower arms are mounted on a second and a third wiring pattern C02, C02 disposed below the first wiring pattern. The first wiring pattern C01 is extended between the second and third wiring patterns, and to the extended end portion, wiring from a positive electrode terminal T01 is connected. Further, by mounting three insulation substrates 108 juxtaposed in one module, a 12-in-1 module is configured.
摘要翻译：要解决的问题：为了使单个半导体功率模块上的例如12个臂的紧凑安装能够在模块端面上设置DC端子和AC端子，并且保持电力电路的低电感。解决方案：在一个绝缘基板108上，两对上臂（100,104和102,106）设置在绝缘基板的上右上和左侧，以及两对下臂（101,105和103），107）设置在绝缘基板的右下方和左侧。作为绝缘基板上的布线图案，两对上臂安装在第一布线图案C01上，两对下臂安装在设置在第一布线图案下方的第二布线图案C02和第三布线图案C02上。第一布线图案C01在第二布线图案和第三布线图案之间延伸，并且延伸端部连接有来自正极端子T01的布线。此外，通过将三个绝缘基板108安装在一个模块中，配置12合1模块。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012174878A Semiconductor device and apparatus using the same 审中-公开
标题翻译：半导体器件和使用它的设备
公开(公告)号：JP2012174878A
公开(公告)日：2012-09-10
申请号：JP2011035304
申请日：2011-02-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TERAKAWA TAKESHI , MATSUYOSHI SATOSHI , NARITA KAZUTOYO , MORI MUTSUHIRO
IPC分类号： H01L29/868 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/47 , H01L29/861 , H01L29/872 , H02K11/00
CPC分类号： H01L29/872 , H01L24/01 , H01L29/0619 , H01L29/8611 , H01L2924/12036 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve the reliability, and to provide a rotating electrical machine or a vehicle using the semiconductor device.SOLUTION: A semiconductor device has a Schottky junction and a pn junction. The pn junction is formed by a high-concentration P-type diffusion layer 5 and an N-type diffusion layer 4. The Schottky junction is formed by a low-concentration P-type diffusion layer 6 and a metal electrode 7. The breakdown voltage of the pn junction in a rectifying region is lower than that of the Schottky junction and the pn junction in a guard ring portion Z2.

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