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1. 发明专利

JP2006054227A Semiconductor power module and semiconductor device 审中-公开
标题翻译：半导体功率模块和半导体器件
公开(公告)号：JP2006054227A
公开(公告)日：2006-02-23
申请号：JP2004232885
申请日：2004-08-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SOGA TASAO , KAWASE DAISUKE , SUZUKI KAZUHIRO , SUNAI SHIGEO
IPC分类号： H01L21/52 , H01L21/56
CPC分类号： H01L24/29 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/92247 , H01L2924/01322 , H01L2924/10253 , H01L2924/15311 , H01L2924/15747 , H01L2924/15787 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor power module manufactured by a soldering process without cleaning processes using cleaning liquids, a wire-bonding process, or a process of sealing with an epoxy-based resin, after the wire-bonding process.
SOLUTION: In the connection of a substrate and a chip having a small number of voids, where the area of the junction area is large, for high-density packaging in a fine pitch in the semiconductor power module, solder is supplied in a paste print system, a furnace in which a hydrogen atmosphere and depressurization are combined is used, flux constituents of paste flux are volatilized, in a manner that is non-halogen and rosinless at a temperature that is equal to or lower than the soldering temperature, and thereby the surface is cleaned in wash free manner.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在引线接合工艺之后，提供通过焊接工艺制造的半导体功率模块，而不使用清洁液进行清洁处理，引线接合工艺或与环氧树脂基树脂密封的过程。解决方案：在衬底和具有少数空隙的芯片的连接中，其中接合面积的面积大，为了在半导体功率模块中以微细间距进行高密度封装，将焊料供应到使用糊状印刷系统，其中组合氢气氛和降压的炉，糊剂助熔剂的助熔剂成分以非卤素和无锡的方式挥发，温度等于或低于焊接温度，从而以无洗涤的方式清洁表面。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008177279A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008177279A
公开(公告)日：2008-07-31
申请号：JP2007008107
申请日：2007-01-17
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ODA TETSUO , KOBAYASHI MASAYOSHI , MATSUURA KATSUYA , TAKAYANAGI YUJI , KAWASE DAISUKE
IPC分类号： H01L29/78 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method for stably manufacturing semiconductor device such as a trench gate type MOS transistor that is not easily affected by a defect resulting from variation in manufacturing processes and assures small variation in the threshold voltages among semiconductor devices.
SOLUTION: In the method for manufacturing semiconductor device including a first conductive semiconductor layer, a second conductive channel region on the front surface of the same semiconductor layer, a first conductive source region on the front surface of the channel region, a trench region extended to the semiconductor layer from the source region through the channel region, a gate insulating film of the trench region, and a gate electrode, the channel region is formed by conducting the predetermined heat treatment after ion injection of an impurity, an acceleration voltage in the ion injection is in the range of 200 to 300 keV, and the predetermined heat treatment is continued for 30 to 600 minutes under the temperature range of 1,000 to 1,200°C in the non-oxidizing atmosphere.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于稳定地制造诸如沟槽栅型MOS晶体管的半导体器件的方法，其不容易受到由制造工艺的变化引起的缺陷的影响，并且确保半导体器件中的阈值电压的小的变化。解决方案：在包括第一导电半导体层的半导体器件的制造方法中，在同一半导体层的前表面上的第二导电沟道区，沟道区的前表面上的第一导电源区，沟槽通过沟道区域从源极区域延伸到半导体层，沟槽区域的栅极绝缘膜和栅电极，通过在离子注入杂质之后进行预定热处理形成沟道区域，加速电压离子注入的范围为200〜300keV，在非氧化性气氛中，在1000〜1200℃的温度范围内，进行规定的热处理持续30〜600分钟。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006032617A Semiconductor power module 有权
标题翻译：半导体功率模块
公开(公告)号：JP2006032617A
公开(公告)日：2006-02-02
申请号：JP2004208703
申请日：2004-07-15
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SOGA TASAO , KAWASE DAISUKE , TANAKA CHIKARA , MORIZAKI HIDEKAZU , SUZUKI KAZUHIRO
IPC分类号： H01L23/29 , H01L23/31 , H01L25/07 , H01L25/18
CPC分类号： H01L24/32 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83951 , H01L2224/8592 , H01L2224/92247 , H01L2924/01019 , H01L2924/01079 , H01L2924/10253 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor power module which has excellent power-proof cycle, temperature cycle-proof and moisture resistance and is economical with longevity. SOLUTION: An insulating substrate is used in which a heatsink substrate 4 of high purity melting aluminum and conductive parts 6, 15 of high purity melting aluminum are directly connected to a ceramic insulating substrate 102. A polyimide coating resin 9 having excellent thermal resistance and moisture resistance is applied thinly and cured beforehand. In addition, an epoxy sealing resin 10 having a low Young's modulus and matched to the linear expansion coefficient of a solder 3 is charged. Consequently, a high reliability, small size, light weight power module is realized by remarkably reducing a cost according to a soldering step of a single layer, etc. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的耐电力循环，耐温度循环和耐湿性的树脂密封半导体功率模块，并且具有长寿命的经济性。解决方案：使用绝缘基板，其中高纯度熔融铝的散热基板4和高纯度熔化铝的导电部分6,15直接连接到陶瓷绝缘基板102.具有优异热量的聚酰亚胺涂层树脂9 预先施加电阻和耐湿性并进行固化。此外，具有低的杨氏模量和与焊料3的线膨胀系数匹配的环氧树脂密封树脂10被充电。因此，通过根据单层的焊接步骤等显着降低成本，实现了高可靠性，小尺寸，重量轻的功率模块。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005311019A Semiconductor power module 审中-公开
标题翻译：半导体功率模块
公开(公告)号：JP2005311019A
公开(公告)日：2005-11-04
申请号：JP2004125175
申请日：2004-04-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SOGA TASAO , KAWASE DAISUKE , MORIZAKI HIDEKAZU , TANAKA CHIKARA , SUZUKI KAZUHIRO
IPC分类号： H01L25/07 , H01L21/60 , H01L25/18
CPC分类号： H01L24/73 , H01L2224/32225 , H01L2224/45 , H01L2224/45124 , H01L2224/48 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/48699 , H01L2224/49 , H01L2224/4911 , H01L2224/73265 , H01L2224/8592 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/30105 , H01L2924/3025 , H01L2924/351 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prolong the lifetime, in order to provide a high reliability semiconductor power module at low cost with respect to power cycle and TFT testing. SOLUTION: On the wire bond (the bonding surface 9) of an Al line 8 on a semiconductor chip 1, epoxy coating resin 10, whose coefficient of linear expansion is (10 to 15)×10 -6 /°C, is applied thinly and then is cured. Then, the entirety is sealed with an epoxy filling resin 17, whose coefficient of linear expansion is (17 to 24)×10 -6 /°C equal to solderings 3 and 7. The reinforcement of the wire bond with the coating resin 10 superior in adhesion to the Al line and the chip and the sealing with the filling resin 17 adhesive to the soldering 3 and 7 and the substrate 4 improves the lifetime of the soldering, protects the element portion of the chip, and decrease the curvature of a module. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了延长使用寿命，为了在功率循环和TFT测试方面以低成本提供高可靠性的半导体功率模块。解决方案：在半导体芯片1上的Al线8的引线接合（接合面9）上，线膨胀系数为（10〜15）×10 -6 < / SP> /℃，被稀释，然后固化。然后，使用与焊料3和7相等的线膨胀系数为（17〜24）×10 -6 /℃的环氧树脂填充树脂17密封整体。与涂布树脂10的粘合性优于与Al线和芯片的密合性以及与填充树脂17的粘合剂对焊接3和7以及基板4的粘合，提高了焊接的寿命，保护芯片的元件部分，并降低模块的曲率。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2003303940A Insulation circuit board and semiconductor device 审中-公开
标题翻译：绝缘电路板和半导体器件
公开(公告)号：JP2003303940A
公开(公告)日：2003-10-24
申请号：JP2002109868
申请日：2002-04-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAWASE DAISUKE , SUZUKI KAZUHIRO , BANDO AKIRA , HIRAI TSUTOMU , KAMOSHITA RIKUO , SAITO NAOTO , SASAKI KOJI
IPC分类号： H05K1/05 , H01L23/12 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/49111 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an insulation circuit board, having a small heat resistance and high reliability, and a semiconductor device employing the board. SOLUTION: The insulation circuit board is obtained, by laminating a first metal plate and a second metal plate or a conductive metal plate formed on the first metal plate through two layers of resin insulation layers so as to have the shape of an electric circuit pattern. A first resin layer, contacted with the first metal base board, is a resin layer, filled with 50 wt.% or more of filler having a thermal conductivity of 20 W/m K or higher and having a thickness, larger than 20 μm; while the filling rate of the filler of the second resin layer contacted with the second metal plate is smaller than the filling rate of filler of the first resin layer, and the thickness of the same is smaller than 5 μm. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有小的耐热性和高可靠性的绝缘电路板以及采用该板的半导体器件。解决方案：通过层压通过两层树脂绝缘层在第一金属板上形成的第一金属板和第二金属板或导电金属板层叠绝缘电路板，使其具有电电路图案。与第一金属基板接触的第一树脂层是填充有导热率为20W / m·K以上且厚度大于20μm的50重量％以上的填料的树脂层; 而与第二金属板接触的第二树脂层的填料的填充率小于第一树脂层的填料的填充率，并且其厚度小于5μm。版权所有（C）2004，JPO

6. 发明专利

JP2003031740A Semiconductor module and its manufacturing method 有权
标题翻译：半导体模块及其制造方法
公开(公告)号：JP2003031740A
公开(公告)日：2003-01-31
申请号：JP2001213005
申请日：2001-07-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANIE HISAFUMI , BANDO AKIRA , TANBA AKIHIRO , KAWASE DAISUKE , SAITO NAOTO
IPC分类号： H05K7/20 , H01L23/36
CPC分类号： H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To inexpensively and highly reliably provide a semiconductor module that is low in heat resistance and high in added value. SOLUTION: The product of the modulus of longitudinal elasticity and thickness of the heat radiating fin of this semiconductor module is adjusted to the threefold of the product of the modulus of longitudinal elasticity and thickness of a conductive layer or smaller, by using a material having a larger coefficient of linear expansion than the conductive layer has for the fin. A space is provided between the microcomputer mounting position of a circuit board and the fin. At the time of manufacturing the fin, press work is performed by using a pressure die paired with the fin.
摘要翻译：要解决的问题：为了廉价和高度可靠地提供耐热性低和附加值高的半导体模块。解决方案：该半导体模块的散热片的纵向弹性模量和厚度的乘积被调整为导电层的纵向弹性模量和厚度的乘积的三倍以上，比导电层具有较大的线膨胀系数。在电路板的微计算机安装位置和散热片之间设置空间。在制造翅片时，通过使用与翅片配对的压力模具进行压制加工。

7. 发明专利

JP2007329362A Power module 有权
标题翻译：电源模块
公开(公告)号：JP2007329362A
公开(公告)日：2007-12-20
申请号：JP2006160421
申请日：2006-06-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SOGA TASAO , KAWASE DAISUKE , SUZUKI KAZUHIRO , MORIZAKI HIDEKAZU , SAITO KATSUAKI
IPC分类号： H01L23/40 , H01L23/36
CPC分类号： H01L24/73 , H01L2224/0603 , H01L2224/2919 , H01L2224/32225 , H01L2224/45 , H01L2224/45124 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/48491 , H01L2224/48699 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/11 , H01L2224/45015
摘要： PROBLEM TO BE SOLVED: To solve the following problem: although Sn-3Ag-0.5Cu solder is widely used because Pb-free structure is required from environmental issues, the solder for post-processing of a power module is performed on large area substrate; and the Sn-3Ag-0.5Cu solder scarcely bringing about creep deformation upon the large deformation of the substrate accompanied by the warp thereof gives rise to the notable life reduction according to a temperature cycle and a TFT test. SOLUTION: The cracks that occurs in the solder can be prevented and delayed, and the crack developing speed can be reduced, by partially applying an epoxy-based resin having suitable physical properties onto the outermost periphery of the solder working as the starting point of the cracks to change the destruction mechanism. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了解决以下问题：尽管由于环境问题需要无铅结构，Sn-3Ag-0.5Cu焊料广泛使用，但用于后处理功率模块的焊料大量进行面积基材; 并且Sn-3Ag-0.5Cu焊料几乎不会在伴随着翘曲的基板的大变形时引起蠕变变形，从而根据温度循环和TFT测试引起显着的寿命降低。解决方案：可以防止和延迟焊料中发生的裂纹，通过将具有合适物理性能的环氧树脂部分施加到作为起动剂的焊料的最外周部上，可以减少裂纹展开速度点裂点改变破坏机制。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2006179538A Semiconductor power module 审中-公开
标题翻译：半导体功率模块
公开(公告)号：JP2006179538A
公开(公告)日：2006-07-06
申请号：JP2004368629
申请日：2004-12-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SOGA TASAO , KAWASE DAISUKE , TANAKA CHIKARA , MORIZAKI HIDEKAZU , SUZUKI KAZUHIRO
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L24/73 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/83951 , H01L2224/8592 , H01L2924/01019 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve thermal fatigue life and moisture resistance of a solder connection part of a resin sealing semiconductor power module. SOLUTION: In the semiconductor power module, a silicon chip and a connection conductor, which are soldered to a ceramic insulating substrate or a resin insulating metal substrate through a thermal diffusion board, are precoated with polyimide resin superior in heat resistance and moisture resistance. Precoat resin is coated and sealed with epoxy resin of a coefficient of linear expansion, which is adjusted to that of solder with a low Young's modulus. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提高树脂密封半导体功率模块的焊接部分的热疲劳寿命和耐湿性。解决方案：在半导体功率模块中，通过热扩散板焊接到陶瓷绝缘基板或树脂绝缘金属基板上的硅芯片和连接导体预涂覆有耐热性和湿气性优异的聚酰亚胺树脂抵抗性。预涂树脂用线性膨胀系数的环氧树脂涂覆并密封，该树脂被调节到具有低杨氏模量的焊料。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2003068979A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2003068979A
公开(公告)日：2003-03-07
申请号：JP2001258143
申请日：2001-08-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KUSHIMA TADAO , TSUYUNO ENJIYOU , SUZUKI KAZUHIRO , KODAMA HIRONORI , KAMOSHITA RIKUO , BANDO AKIRA , HIRAI TSUTOMU , SAITO KATSUAKI , KAWASE DAISUKE
IPC分类号： H01L23/28 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device which is kept high in dielectric strength, simple in structure, and inexpensive. SOLUTION: A case is composed of a case side wall 5 and a case bottom plate 4, an insulating board 1a provided with a front and a rear where a conductor 1b is formed respectively is bonded to the case bottom plate 4 with solder, and a Si chip 2 and an external extracting terminal 7 are bonded on one surface of the insulating board 1a by solder for the formation of a semiconductor device. The top surface of the case is sealed up with a sealing plate 8a which is provided with a gel agent inlet 8d and a protruding structure 8b which extracts out a external leading terminal 7. The protruding structure 8b is constituted extending downward to the sealing plate 8a. Gel agent 10 is made to fill up the case so as to reach the lower end of the projection of the structure 8B, and a cavity is formed extending from the top surface of the gel agent to the undersurface of the sealing plate 8a. A hole bored in the structure 8b is filled up with a hard resin so as to fix the external terminal, and the gel agent inlet 8d is filled up with a silicone rubber cap 13.
摘要翻译：要解决的问题：提供一种电介质强度高，结构简单，成本低廉的功率半导体器件。解决方案：壳体由壳体侧壁5和壳体底板4构成，设置有导体1b的前后的绝缘板1a分别用焊料接合到壳体底板4，并且 Si芯片2和外部提取端子7通过用于形成半导体器件的焊料接合在绝缘板1a的一个表面上。壳体的上表面用密封板8a密封，密封板8a设置有凝胶剂入口8d和从外部引出端子7抽出的突出结构8b。突出结构8b向下延伸到密封板8a 。凝胶剂10被填充到壳体的下端，从而形成从凝胶剂的顶表面延伸到密封板8a的下表面的空腔。在结构体8b中钻孔的孔用硬树脂填充以固定外部端子，并且凝胶剂入口8d填充有硅橡胶盖13。

10. 发明专利

JP2011040586A Trench gate type semiconductor device 有权
标题翻译： TRENCH门式半导体器件
公开(公告)号：JP2011040586A
公开(公告)日：2011-02-24
申请号：JP2009186977
申请日：2009-08-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SAWA TAKEO , KAWASE DAISUKE , ARAI TAIKA
IPC分类号： H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a trench gate type semiconductor device which has a low on-voltage and reduces gate noise by providing insulating body having a high capacity to a FP layer and an emitter electrode.
SOLUTION: The trench gate type semiconductor device is characterized in that adjacent first and second regions are formed between adjacent insulating gates and a third semiconductor layer in the second region is electrically connected to a first main electrode via an insulating body with a high electric capacity.
COPYRIGHT: (C)2011,JPO&INPIT

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