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1. 发明专利

JP2012104729A Imaging device 有权
标题翻译：成像装置
公开(公告)号：JP2012104729A
公开(公告)日：2012-05-31
申请号：JP2010253510
申请日：2010-11-12
申请人： Hamamatsu Photonics Kk , Nhk Engineering Services Inc , Nippon Hoso Kyokai , 日本放送協会 , 浜松ホトニクス株式会社 , 財団法人エヌエイチケイエンジニアリングサービス
发明人： MATSUBARA TOMOKI , SEO HOKUTO , AIHARA SATOSHI , SUZUKI MICHINORI , KIKUCHI KENJI , OKAWA YUJI , SUZUKI SHIRO , KUBOTA SETSU , TANIOKA KENKICHI , MIYAKAWA KAZUNORI , HIRAI TADAAKI , SUZUKI HIDEYUKI , KOBAYASHI AKIRA
IPC分类号： H01L31/08 , H01J31/38 , H01L27/146 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide an imaging device in an avalanche multiplication system with which sensitivity is greatly improved without increasing thickness of a photoconduction film and apply voltage to the photoconduction film and which realizes high photoelectric conversion efficiency and stable avalanche multiplication at the same time.SOLUTION: An imaging device comprises: a first translucent electrode disposed in a light incident side; a first photoelectric conversion section, laminated on the first translucent electrode, for converting an incident light coming through the first translucent electrode into electricity; a first electroluminescent thin film, laminated on the first photoelectric conversion section, for emitting light because charge generated at the first photoelectric conversion section is injected therein; a second translucent electrode laminated on the first electroluminescent thin film; the second photoelectric conversion section, laminated on the second translucent electrode, at which light emitted at the first electroluminescent thin film and transmitted through the second translucent electrode is converted into electricity; and a signal readout section which readouts a signal charge generated at the second photoelectric conversion section as two-dimentional image signal. The first photoelectric conversion section or the second photoelectric conversion section conducts avalanche multiplication of the electric charge in the photoelectric conversion section.
摘要翻译：要解决的问题：为了提供一种在雪崩倍增系统中的成像装置，其灵敏度大大提高，而不增加光导膜的厚度并向光电导膜施加电压，并且实现高光电转换效率和稳定的雪崩倍增同一时间。解决方案：成像装置包括：设置在光入射侧的第一透光电极; 第一光电转换部，层叠在第一透光性电极上，用于将通过第一透光性电极的入射光转换成电; 层叠在第一光电转换部上的第一电致发光薄膜，用于发射由于在第一光电转换部产生的电荷的光; 层叠在第一电致发光薄膜上的第二透光性电极; 层叠在第二透光性电极上的第二光电转换部，将通过第二透光性电极透射的第一电致发光薄膜发射的光转换成电; 以及信号读出部，其将在第二光电转换部生成的信号电荷读出为二维图像信号。第一光电转换部或第二光电转换部进行光电转换部中的电荷的雪崩乘法。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2006049974A Imaging device and method of controlling the same 审中-公开
标题翻译：成像装置及其控制方法
公开(公告)号：JP2006049974A
公开(公告)日：2006-02-16
申请号：JP2004224088
申请日：2004-07-30
申请人： Hamamatsu Photonics Kk , Nippon Hoso Kyokai , 日本放送協会 , 浜松ホトニクス株式会社
发明人： OKAWA YUJI , MATSUBARA TOMOKI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , KUBOTA SETSU , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01J31/38 , H01L31/08 , H04N5/225 , H04N5/335 , H04N5/369 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To prevent deterioration in a photoelectric conversion layer, and specifically, to enable imaging including a high-luminance spot light, in an imaging device having a high-sensitivity photoelectric conversion layer. SOLUTION: The imaging device has a photoelectric conversion film, having at least an amorphous semiconductor layer containing Se as the main material and having an avalanche multiplication function, and an amorphous photoelectric conversion layer, containing Se and Te and having a function of absorbing most of an incident light, to enable converting the light into electric charges; a first barrier layer formed on the first surface of the photoelectric conversion film; a translucent electrode formed on the first barrier layer; a second barrier layer formed on a second surface of the photoelectric conversion film; and an electric charge reading means, provided on the second surface side of the photoelectric conversion film and reading signal electric charges to be generated in the photoelectric conversion film. The imaging device has a temperature control means for controlling the temperature of the photoelectric conversion film at a temperature that is not lower than the glass transfer temperature of the amorphous photoelectric conversion layer and not higher than a glass transfer temperature plus 30°C of the amorphous semiconductor layer, and a voltage-applying means for applying a voltage via the translucent photoelectric conversion layer so that the electric field of the photoelectric conversion layer is 0.8×10 8 -1.1×10 8 V/m. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止在具有高灵敏度光电转换层的成像装置中光电转换层的劣化，特别是能够使包括高亮度聚光的成像。解决方案：成像装置具有至少具有含有Se作为主要材料并具有雪崩倍增功能的非晶半导体层的光电转换膜和包含Se和Te的非晶形光电转换层，并具有吸收大部分入射光，使光能转换成电荷; 形成在所述光电转换膜的第一表面上的第一阻挡层; 形成在所述第一阻挡层上的透光性电极; 形成在所述光电转换膜的第二表面上的第二阻挡层; 以及设置在光电转换膜的第二表面侧并读取在光电转换膜中产生的信号电荷的电荷读取装置。成像装置具有温度控制装置，用于在不低于非晶型光电转换层的玻璃转移温度的温度下控制光电转换膜的温度，并且不高于玻璃化转移温度加上非晶态转移温度的30℃ 半导体层和用于经由半透明光电转换层施加电压的电压施加装置，使得光电转换层的电场为0.8×10 8 -1.1×10 8 < / SP> V / m时。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2009123423A Imaging device 审中-公开
标题翻译：成像装置
公开(公告)号：JP2009123423A
公开(公告)日：2009-06-04
申请号：JP2007294284
申请日：2007-11-13
申请人： Futaba Corp , Hamamatsu Photonics Kk , Nippon Hoso Kyokai , Pioneer Electronic Corp , パイオニア株式会社 , 双葉電子工業株式会社 , 日本放送協会 , 浜松ホトニクス株式会社
发明人： MATSUBARA TOMOKI , OKAWA YUJI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , KUBOTA SETSU , EGAMI NORIFUMI , TANIOKA KENKICHI , HIRAI TADAAKI , OKAMURA NORIO , OGUSU KOICHI , KOBAYASHI AKIRA , ITO SHIGEO , TANIGUCHI MASATERU , NAKAMURA KAZUHITO , MIYA KENTA , WATANABE ATSUSHI
IPC分类号： H01J31/38
摘要： PROBLEM TO BE SOLVED: To provide a highly sensitive imaging device in which a superior imaging signal can be obtained by suppressing occurrence of image failure phenomenon such as a false signal, a ripple phenomenon, and an inversion phenomenon or the like. SOLUTION: On a conductive face 1a of a light-transmissive substrate 1, a light-conductive part 2 is formed. The light-transmissive substrate 1 and a glass tube 4 are sealed by an indium ring 3 in a state that a conductive film 1A and the indium ring 3 are electrically connected so that an internal space of the glass tube 4 is held in vacuum. A shielding ring 10 is pinched by the photo-conductive part 2 and a meshed electrode 9, and a non-forming region in which the light-conductive part 2 is not formed among the conductive film 1A of the light-transmitting substrate 1, and the indium ring 3 are covered by this shielding ring 10. Due to this, the entry of a floating electrons into the conductive film 1A and the indium ring 3 can be suppressed so that the image signal of high quality image can be obtained without accompanying the image failure phenomena such as the false signal, the ripple phenomenon, and the inversion phenomenon or the like. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种高灵敏度成像装置，其中通过抑制诸如假信号，纹波现象和反转现象等的图像故障现象的发生，可以获得优异的成像信号。解决方案：在透光基板1的导电面1a上形成导光部2。在导电膜1A和铟环3电连接的状态下，透光性基板1和玻璃管4由铟环3密封，使得玻璃管4的内部空间成为真空。遮光环10由导光部2和网状电极9以及在透光性基板1的导电膜1A之间不形成导光部2的非形成区域夹持，铟环3被该屏蔽环10覆盖。由此，可以抑制浮动电子进入导电膜1A和铟环3，从而可以获得高品质图像的图像信号而不伴随图像故障现象如虚假信号，纹波现象和反转现象等。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2005056656A Image pickup device and operating method thereof 有权
标题翻译：图像拾取装置及其操作方法
公开(公告)号：JP2005056656A
公开(公告)日：2005-03-03
申请号：JP2003285405
申请日：2003-08-01
申请人： Hamamatsu Photonics Kk , Nippon Hoso Kyokai , 日本放送協会 , 浜松ホトニクス株式会社
发明人： OKAWA YUJI , MATSUBARA TOMOKI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , EGAMI NORIFUMI , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01L27/146 , H01J29/45 , H01J31/38 , H04N5/30
摘要： PROBLEM TO BE SOLVED: To realize high sensitivity of an image pickup device using a photoelectric conversion layer including amorphous selenium by making the photoelectric conversion layer thick.
SOLUTION: The image pickup device comprises a photoelectric conversion layer 23 including the amorphous selenium, a first barrier layer 22 formed on the first surface of the photoelectric conversion layer, a translucent electrode 21 formed on the first barrier layer, a second barrier layer 25 formed on the second surface of the photoelectric conversion layer, and a charge readout means 30 which is formed on the second surface side of the photoelectric conversion layer and reads a signal charge generated in the photoelectric conversion layer. The image pickup device has a temperature control means 40 which controls the temperature of the photoelectric conversion layer between a glass transition temperature and the glass transition temperature + 30°C. This prevents the photoelectric conversion layer from breaking, and realizes the high sensitivity of the image pickup device.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：通过使光电转换层变厚，实现使用包含非晶硒的光电转换层的图像拾取装置的高灵敏度。解决方案：图像拾取装置包括包括非晶硒的光电转换层23，形成在光电转换层的第一表面上的第一势垒层22，形成在第一阻挡层上的透光性电极21，第二阻挡层形成在光电转换层的第二表面上的层25以及形成在光电转换层的第二表面侧上并读取在光电转换层中产生的信号电荷的电荷读出装置30。图像拾取装置具有温度控制装置40，其在玻璃化转变温度和玻璃化转变温度+ 30℃之间控制光电转换层的温度。这防止光电转换层破裂，并且实现了图像拾取装置的高灵敏度。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005051115A Thin film transistor, manufacturing method thereof, optical functioning element, and manufacturing method of optical functioning element 审中-公开
标题翻译：薄膜晶体管，其制造方法，光学功能元件和光学功能元件的制造方法
公开(公告)号：JP2005051115A
公开(公告)日：2005-02-24
申请号：JP2003282810
申请日：2003-07-30
申请人： Nippon Hoso Kyokai , 日本放送協会
发明人： AIHARA SATOSHI , OTAKE HIROSHI , TANIOKA KENKICHI
IPC分类号： H01L51/50 , H01L27/146 , H01L29/786 , H01L31/08 , H01L51/10 , H01L51/42 , H05B33/14
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor and an optical functioning element capable of preventing fracture caused by stress, and to provide the manufacturing method of the thin film transistor not damaging elements on a substrate on a formed side, and the manufacturing method of the optical functioning element not damaging an organic material thin film constituting the optical functioning element. SOLUTION: The optical functioning element comprises on a substrate a light receiving layer containing an organic material, or a light emitting layer containing an organic material to which a thin film transistor is connected. The thin film transistor comprises a transparent gate electrode, a transparent gate insulating film in contact with the gate electrode, a transparent semiconductor layer facing the gate electrode putting the gate insulating film therebetween, a transparent source electrode electrically connected to the semiconductor layer, and a transparent drain electrode electrically connected to the semiconductor layer. There is formed with an organic material at least one among the substrate, gate electrode, semiconductor layer, source electrode, and drain electrode. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够防止由应力引起的断裂的薄膜晶体管和光学功能元件，并且提供薄膜晶体管的制造方法，而不会在成形侧的基板上损坏元件，以及光学功能元件的制造方法不损害构成光功能元件的有机材料薄膜。光功能元件在基板上包括含有有机材料的光接收层，或含有连接有薄膜晶体管的有机材料的发光层。薄膜晶体管包括透明栅极电极，与栅电极接触的透明栅极绝缘膜，与栅极绝缘膜对置的面对栅电极的透明半导体层，与半导体层电连接的透明源电极，以及电连接到半导体层的透明漏电极。在基板，栅电极，半导体层，源电极和漏电极中至少有一个形成有机材料。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JPS5780637A Target for image pickup tube 失效
标题翻译：图像抽吸管目标
公开(公告)号：JPS5780637A
公开(公告)日：1982-05-20
申请号：JP15708480
申请日：1980-11-10
申请人： Hitachi Ltd , Nippon Hoso Kyokai
发明人： NONAKA IKUMITSU , INOUE SHIGENORI , SHIDARA KEIICHI , TANIOKA KENKICHI
IPC分类号： H01J29/45 , H01L31/08
CPC分类号： H01J29/456
摘要： PURPOSE: To improve highlight sticking by doping fluoride to an Se-As-Te photoconductive film at a specified dope concentration and from the side of the light incident surface to the specified depth.
CONSTITUTION: An N type transparent electrode 3 consisting of a transparent electrode 2 whose principal component is SnO
2 and CeO
2 is formed on a glass substrate 1. Besides, a photoconductive film 4 (Se: 94wt%, As: 6wt%, T
1 = 30nm) of an Se-As P type noncrystal semiconductor, photoconductive film 5 (Se: 64wt%, As: 3wt%, Te: 33wt%, T
2 =60nm) of an Se-As-Te noncrystal semiconductor, and photoconductive film 7 (Se: 72→97wt%, As: 28→3wt%, T
3 =60nm) of an Se-As P type noncrystal semiconductor are formed on it. An LiF dope layer 6(LiF: 0.4± 0.1wt%, T
3 = 60±6nm) is formed on the region of the photoconductive films 4 and 5. As a result, image pickup current is raised and highlight sticking is improved.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：通过以特定的浓度浓度和从光入射表面一侧到指定深度，将氟化物掺杂到Se-As-Te光电导膜来改善高光斑。构成：在玻璃基板1上形成由主要成分为SnO 2和CeO 2的透明电极2构成的N型透明电极3.此外，光导膜4（Se：94重量％，As：6重量％，T1 = 30nm）的Se-As-Te非晶体半导体，Se-As-Te非晶体半导体的光电导膜5（Se：64重量％，As：3重量％，Te：33重量％，T2 = 60nm）和感光膜7（Se：在其上形成Se-As P型非晶半导体的72 97重量％，As：28 3重量％，T3 = 60nm）。在感光膜4和5的区域上形成LiF掺杂层6（LiF：0.4+或-0.1重量％，T3 = 60+或-6nm）。结果，摄像电流升高，突出显示粘附改进。

7. 发明专利

JP2001008924A X-RAY DIAGNOSTIC SYSTEM 失效
公开(公告)号：JP2001008924A
公开(公告)日：2001-01-16
申请号：JP18709199
申请日：1999-06-30
申请人： MORI EIZO , JAPAN BROADCASTING CORP , NHK ENGINEERING SERVICES INC
发明人： MORI EIZO , TANIOKA KENKICHI , OKAWA YUJI , KUBOTA SETSU , MOCHIZUKI AKIRA , YAMAGUCHI KOICHI , HYODO KAZUYUKI
IPC分类号： A61B6/00
摘要： PROBLEM TO BE SOLVED: To provide an X-ray diagnostic system capable of imaging a microvasente that can not be realized by usual medical facilities even with its structure at relatively low cost. SOLUTION: There are provided at least an X-ray irradiation device 1 which can irradiate monochromatic X-rays on an iodine absorption edge with exposure at least over 7.7×10-4 (C/kg) per second, the X-ray irradiation device 1 which can irradiate monochromatic X-rays on a gadolinium absorption edge with exposure at least over 7.7×10-5 (C/kg) per second, an X-ray imaging device 2 which images an X-ray L which is irradiated from the X-ray irradiation device 1 and passed through a subject H as an image of which sensitivity is 8 times larger than that of a saticon tube and whose resolution is over 6 (1p/mm) directly or through a fluorescent plate device and an image display unit which can indicate the image with the resolution on an X-ray diagnostic system.

8. 发明专利

JP2002319354A IMAGING DEVICE 失效
公开(公告)号：JP2002319354A
公开(公告)日：2002-10-31
申请号：JP2001121512
申请日：2001-04-19
申请人： JAPAN BROADCASTING CORP , HAMAMATSU PHOTONICS KK
发明人： OKAWA YUJI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , EGAMI NORIFUMI , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01J29/45 , H01J31/38
摘要： PROBLEM TO BE SOLVED: To provide an imaging device capable of preventing deformation of a photoconductive film and an image defect due to temperature rise of the imaging device without degrading the performance of the imaging device such as high sensitivity, high resolution and high S/N ratio. SOLUTION: A first heat-resistance reinforcing layer 152 is formed at a part abutting on a first amorphous photoconductive film 14 in a second amorphous photoconductive film 15. A second heat-resistance reinforcing layer 142 is formed on a first amorphous photoconductive layer 141. The first and second heat-resistance reinforcing layers are each formed of a layer using selenium as a main body and containing 10-40 wt.% in total of one or more constituents out of As, Ge and Ga.

9. 发明专利

JP2002057314A IMAGE SENSING DEVICE AND ITS OPERATION METHOD 失效
公开(公告)号：JP2002057314A
公开(公告)日：2002-02-22
申请号：JP2000242356
申请日：2000-08-10
申请人： JAPAN BROADCASTING CORP , HAMAMATSU PHOTONICS KK
发明人： OKAWA YUJI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , EGAMI NORIFUMI , TANIOKA KENKICHI , HIRAI TADAAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01L27/146 , H01J29/45 , H01J31/38 , H01L31/107 , H04N5/335 , H04N5/357 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To realize spectral sensitivity characteristics and photoelectric conversion characteristics of higher efficiency which are suitable for a color camera, in an image sensing device wherein sensitivity is increased by using avalanche multiplication phenomenon in an amorphous semiconductor layer whose main component is selenium. SOLUTION: A photoelectric conversion part of the image sensing device is constituted of at least a transmissive electrode constituted of a conductive thin film, a positive hole injection obstructing layer, a positive hole injection obstructing auxiliary layer composed of selenium based amorphous semiconductor, a photocarrier generating layer composed of selenium based amorphous semiconductor which includes tellurium of 13-20 wt.% and whose thickness is 0.01-0.2 μm, and a carrier multiplication layer which is used for multiplying optical carriers which are photoelectrieally converted and composed of selenium based amorphous semiconductor.

10. 发明专利

JP2001057166A IMAGE PICKUP DEVICE AND OPERATION METHOD THEREFOR 失效
公开(公告)号：JP2001057166A
公开(公告)日：2001-02-27
申请号：JP23128699
申请日：1999-08-18
申请人： JAPAN BROADCASTING CORP , HAMAMATSU PHOTONICS KK
发明人： OKAWA YUJI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , KUBOTA SETSU , SHIDARA KEIICHI , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01J31/28
摘要： PROBLEM TO BE SOLVED: To provide an image pickup device capable of rapidly canceling graphical distortion generated, when sensitivity adjustment is carried out by reducing the voltage of a target electrode. SOLUTION: A photoconductor layer 101 of this image pickup device is composed of an electron beam scanning region 3, comprising a first photoconductive film and a non-scanning region 4 comprising a second photoconductive film, and the second photoconductive film is formed of a photoconductive film including a positive hole capture layer 402 for making it insensitive by utilizing an electric field relaxation effect, and a layer 404 having higher sensitivity with respect to light having a wavelength longer than the first photoconductive film.

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