专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2002319354A IMAGING DEVICE 失效
公开(公告)号：JP2002319354A
公开(公告)日：2002-10-31
申请号：JP2001121512
申请日：2001-04-19
申请人： JAPAN BROADCASTING CORP , HAMAMATSU PHOTONICS KK
发明人： OKAWA YUJI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , EGAMI NORIFUMI , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01J29/45 , H01J31/38
摘要： PROBLEM TO BE SOLVED: To provide an imaging device capable of preventing deformation of a photoconductive film and an image defect due to temperature rise of the imaging device without degrading the performance of the imaging device such as high sensitivity, high resolution and high S/N ratio. SOLUTION: A first heat-resistance reinforcing layer 152 is formed at a part abutting on a first amorphous photoconductive film 14 in a second amorphous photoconductive film 15. A second heat-resistance reinforcing layer 142 is formed on a first amorphous photoconductive layer 141. The first and second heat-resistance reinforcing layers are each formed of a layer using selenium as a main body and containing 10-40 wt.% in total of one or more constituents out of As, Ge and Ga.

2. 发明专利

JP2002057314A IMAGE SENSING DEVICE AND ITS OPERATION METHOD 失效
公开(公告)号：JP2002057314A
公开(公告)日：2002-02-22
申请号：JP2000242356
申请日：2000-08-10
申请人： JAPAN BROADCASTING CORP , HAMAMATSU PHOTONICS KK
发明人： OKAWA YUJI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , EGAMI NORIFUMI , TANIOKA KENKICHI , HIRAI TADAAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01L27/146 , H01J29/45 , H01J31/38 , H01L31/107 , H04N5/335 , H04N5/357 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To realize spectral sensitivity characteristics and photoelectric conversion characteristics of higher efficiency which are suitable for a color camera, in an image sensing device wherein sensitivity is increased by using avalanche multiplication phenomenon in an amorphous semiconductor layer whose main component is selenium. SOLUTION: A photoelectric conversion part of the image sensing device is constituted of at least a transmissive electrode constituted of a conductive thin film, a positive hole injection obstructing layer, a positive hole injection obstructing auxiliary layer composed of selenium based amorphous semiconductor, a photocarrier generating layer composed of selenium based amorphous semiconductor which includes tellurium of 13-20 wt.% and whose thickness is 0.01-0.2 μm, and a carrier multiplication layer which is used for multiplying optical carriers which are photoelectrieally converted and composed of selenium based amorphous semiconductor.

3. 发明专利

JP2001057166A IMAGE PICKUP DEVICE AND OPERATION METHOD THEREFOR 失效
公开(公告)号：JP2001057166A
公开(公告)日：2001-02-27
申请号：JP23128699
申请日：1999-08-18
申请人： JAPAN BROADCASTING CORP , HAMAMATSU PHOTONICS KK
发明人： OKAWA YUJI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , KUBOTA SETSU , SHIDARA KEIICHI , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01J31/28
摘要： PROBLEM TO BE SOLVED: To provide an image pickup device capable of rapidly canceling graphical distortion generated, when sensitivity adjustment is carried out by reducing the voltage of a target electrode. SOLUTION: A photoconductor layer 101 of this image pickup device is composed of an electron beam scanning region 3, comprising a first photoconductive film and a non-scanning region 4 comprising a second photoconductive film, and the second photoconductive film is formed of a photoconductive film including a positive hole capture layer 402 for making it insensitive by utilizing an electric field relaxation effect, and a layer 404 having higher sensitivity with respect to light having a wavelength longer than the first photoconductive film.

4. 发明专利

DE69031049D1 未知
公开(公告)号：DE69031049D1
公开(公告)日：1997-08-21
申请号：DE69031049
申请日：1990-01-31
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： HIRAI TADAAKI , OGAWA HIROFUMI , SAMESHIMA KENJI , TAKASAKI YUKIO , UNNAI TAKAAKI , YAMAZAKI JUNICHI , KUBOTA MISAO , TANIOKA KENKICHI , HIRUMA EIKYU
IPC分类号： H01J29/45 , H01J31/38 , H01J31/49 , H01J29/02
摘要： An image pick-up apparatus is disclosed which includes a target portion (101, 102, 103) having a photoconductive film (103) on a substrate (101) and a target electrode (102) and reads video information converted into an electric signal in the photoconductive film (103) by an electron beam. An insulating region (104) is provided for the target portion (101, 102, 103) such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion (101, 102, 103).

5. 发明专利

JP2006049974A Imaging device and method of controlling the same 审中-公开
标题翻译：成像装置及其控制方法
公开(公告)号：JP2006049974A
公开(公告)日：2006-02-16
申请号：JP2004224088
申请日：2004-07-30
申请人： Hamamatsu Photonics Kk , Nippon Hoso Kyokai , 日本放送協会 , 浜松ホトニクス株式会社
发明人： OKAWA YUJI , MATSUBARA TOMOKI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , KUBOTA SETSU , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01J31/38 , H01L31/08 , H04N5/225 , H04N5/335 , H04N5/369 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To prevent deterioration in a photoelectric conversion layer, and specifically, to enable imaging including a high-luminance spot light, in an imaging device having a high-sensitivity photoelectric conversion layer. SOLUTION: The imaging device has a photoelectric conversion film, having at least an amorphous semiconductor layer containing Se as the main material and having an avalanche multiplication function, and an amorphous photoelectric conversion layer, containing Se and Te and having a function of absorbing most of an incident light, to enable converting the light into electric charges; a first barrier layer formed on the first surface of the photoelectric conversion film; a translucent electrode formed on the first barrier layer; a second barrier layer formed on a second surface of the photoelectric conversion film; and an electric charge reading means, provided on the second surface side of the photoelectric conversion film and reading signal electric charges to be generated in the photoelectric conversion film. The imaging device has a temperature control means for controlling the temperature of the photoelectric conversion film at a temperature that is not lower than the glass transfer temperature of the amorphous photoelectric conversion layer and not higher than a glass transfer temperature plus 30°C of the amorphous semiconductor layer, and a voltage-applying means for applying a voltage via the translucent photoelectric conversion layer so that the electric field of the photoelectric conversion layer is 0.8×10 8 -1.1×10 8 V/m. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止在具有高灵敏度光电转换层的成像装置中光电转换层的劣化，特别是能够使包括高亮度聚光的成像。解决方案：成像装置具有至少具有含有Se作为主要材料并具有雪崩倍增功能的非晶半导体层的光电转换膜和包含Se和Te的非晶形光电转换层，并具有吸收大部分入射光，使光能转换成电荷; 形成在所述光电转换膜的第一表面上的第一阻挡层; 形成在所述第一阻挡层上的透光性电极; 形成在所述光电转换膜的第二表面上的第二阻挡层; 以及设置在光电转换膜的第二表面侧并读取在光电转换膜中产生的信号电荷的电荷读取装置。成像装置具有温度控制装置，用于在不低于非晶型光电转换层的玻璃转移温度的温度下控制光电转换膜的温度，并且不高于玻璃化转移温度加上非晶态转移温度的30℃ 半导体层和用于经由半透明光电转换层施加电压的电压施加装置，使得光电转换层的电场为0.8×10 8 -1.1×10 8 < / SP> V / m时。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005056656A Image pickup device and operating method thereof 有权
标题翻译：图像拾取装置及其操作方法
公开(公告)号：JP2005056656A
公开(公告)日：2005-03-03
申请号：JP2003285405
申请日：2003-08-01
申请人： Hamamatsu Photonics Kk , Nippon Hoso Kyokai , 日本放送協会 , 浜松ホトニクス株式会社
发明人： OKAWA YUJI , MATSUBARA TOMOKI , MIYAGAWA KAZUNORI , SUZUKI SHIRO , TAKAHATA TAMOTSU , EGAMI NORIFUMI , TANIOKA KENKICHI , HIRAI TADAAKI , KAWAI TOSHIAKI , KOBAYASHI AKIRA , OGUSU KOICHI
IPC分类号： H01L27/146 , H01J29/45 , H01J31/38 , H04N5/30
摘要： PROBLEM TO BE SOLVED: To realize high sensitivity of an image pickup device using a photoelectric conversion layer including amorphous selenium by making the photoelectric conversion layer thick.
SOLUTION: The image pickup device comprises a photoelectric conversion layer 23 including the amorphous selenium, a first barrier layer 22 formed on the first surface of the photoelectric conversion layer, a translucent electrode 21 formed on the first barrier layer, a second barrier layer 25 formed on the second surface of the photoelectric conversion layer, and a charge readout means 30 which is formed on the second surface side of the photoelectric conversion layer and reads a signal charge generated in the photoelectric conversion layer. The image pickup device has a temperature control means 40 which controls the temperature of the photoelectric conversion layer between a glass transition temperature and the glass transition temperature + 30°C. This prevents the photoelectric conversion layer from breaking, and realizes the high sensitivity of the image pickup device.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：通过使光电转换层变厚，实现使用包含非晶硒的光电转换层的图像拾取装置的高灵敏度。解决方案：图像拾取装置包括包括非晶硒的光电转换层23，形成在光电转换层的第一表面上的第一势垒层22，形成在第一阻挡层上的透光性电极21，第二阻挡层形成在光电转换层的第二表面上的层25以及形成在光电转换层的第二表面侧上并读取在光电转换层中产生的信号电荷的电荷读出装置30。图像拾取装置具有温度控制装置40，其在玻璃化转变温度和玻璃化转变温度+ 30℃之间控制光电转换层的温度。这防止光电转换层破裂，并且实现了图像拾取装置的高灵敏度。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

DE69325496D1 未知
公开(公告)号：DE69325496D1
公开(公告)日：1999-08-05
申请号：DE69325496
申请日：1993-12-01
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： YAMAGISHI TOSHIO , NANBA MASAKAZU , EGAMI NORIFUMI , TANIOKA KENKICHI , KURASHIGE MITSUHIRO , TSUJI KAZUTAKA , KANEKO YOSHIYUKI , MIKISHIMA TATSUO , NAGATSUMA KAZUUYUKI , OHSHIMA TETSUYA , NAKANO YASUSHI
IPC分类号： H01J29/04 , H01J29/45 , H01J31/26 , H01J31/38 , H04N5/225 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/378
摘要： A photoconductive target having a transparent electrode (102) and a photoconductive layer (103) on a transparent substrate (101) is disposed opposite to a plurality of integrated electron emitters having electron emitters (106) and gate electrodes (104). A plurality of electron emitters applying electron beams to the photoconductive target are temporally changed over by an electron emitter selector circuit (107) and a gate selector circuit (108). Thereby, signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.

8. 发明专利

DE3917139C2 未知
公开(公告)号：DE3917139C2
公开(公告)日：1997-10-16
申请号：DE3917139
申请日：1989-05-26
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： YAMAMOTO MASANAO , UNNAI TAKAAKI , EHATA SHIGERU , HIRAI TADAAKI , SAMESHIMA KENJI , HIRUMA EIKIYU , SUZUKI SHIROU , TANIOKA KENKICHI , YAMAZAKI JUNICHI , SHIDARA KEIICHI
IPC分类号： H01J9/233 , H01J29/45 , H01J31/26 , H01J31/38 , H01J31/28
摘要： An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.

9. 发明专利

DE3750796T2 未知
公开(公告)号：DE3750796T2
公开(公告)日：1995-04-13
申请号：DE3750796
申请日：1987-07-03
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KAWAMURA TATSURO , YAMAZAKI JUNICHI , HIRUMA EIKYUU , TAKETOSHI KAZUHISA , SUZUKI SHIRO , YAMASHITA TAKASHI , KOSUGI MITSUO , IKEDA YOCHIZUMI , AIBA MASAAKI HONKOMAGOME NICHO , HIRAI TADAAKI , TAKASAKI YUKIO , ISHIOKA SACHIO , MAKISHIMA TATSUO , SAMESHIMA KENJI HITACHI OWADAR , UDA TSUYOSHI , GOTO NAOHIRO , NONAKA YASUHIKO
IPC分类号： H01J29/45 , H01L31/08 , H01L27/14
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer (24) capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

10. 发明专利

DE3778574D1 未知
公开(公告)号：DE3778574D1
公开(公告)日：1992-06-04
申请号：DE3778574
申请日：1987-02-19
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , MAKISHIMA TATSUO , TSUJI KAZUTAKA , HIRAI TADAAKI , INOUE EISUKE , NONAKA YASUHIKO , GOTO NAOHIRO , YAMAMOTO MASANAO , SHIDARA KEIICHI , TANIOKA KENKICHI , YAMASHITA TAKASHI , KAWAMURA TATSURO , HIRUMA EIKYUU , SUZUKI SHIROU , AIBA MASAAKI
IPC分类号： H01J29/45
摘要： A target of image pickup tube, which comprises a transparent substrate (1), a transparent conductive film (2), a p-type photoconductive film (3) made mainly from amorphous Se, an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a backward bias, characterized in that the p-type photoconductive film (3) contains at least a region (b) containing over 35% to 60% by weight of Te in the film thickness direction and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature (Fig. 2).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式