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1. 发明授权

US08841211B2 Methods for forming interconnect structures 有权
标题翻译：形成互连结构的方法
公开(公告)号：US08841211B2
公开(公告)日：2014-09-23
申请号：US13153992
申请日：2011-06-06
申请人： Joung Joo Lee , Xianmin Tang , Tza-Jing Gung
发明人： Joung Joo Lee , Xianmin Tang , Tza-Jing Gung
IPC分类号： H01L21/4763 , H01L21/285 , C23C14/34 , H01L21/768 , C23C14/04
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/345 , C23C14/3492 , H01L21/76882
摘要： Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material.
摘要翻译：本文提供形成互连结构的方法。在一些实施例中，用于在衬底上形成互连的方法可以包括在衬底的上表面顶部沉积材料，并且通过第一沉积工艺沉积位于衬底中的特征的一个或多个表面上，所述第一沉积工艺以更快的速度沉积材料在上表面上比在特征的底表面上的速率; 通过第二沉积工艺将所述材料沉积在所述基底的上表面顶部和所述特征的一个或多个表面上方，所述第二沉积工艺在所述特征的底表面上以比在所述基底的上表面上更大的速率沉积材料; 以及加热沉积的材料以将沉积的材料拉向特征的底表面，以至少部分地用沉积的材料填充该特征。

2. 发明授权

US08580094B2 Magnetron design for RF/DC physical vapor deposition 有权
标题翻译：用于RF / DC物理气相沉积的磁控管设计
公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译：本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化弧。在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

3. 发明申请

US20130296158A1 PVD ALN FILM WITH OXYGEN DOPING FOR A LOW ETCH RATE HARDMASK FILM 有权
标题翻译： PVD AlN薄膜，用于低渗透率硬磁膜的氧气掺杂
公开(公告)号：US20130296158A1
公开(公告)日：2013-11-07
申请号：US13867606
申请日：2013-04-22
申请人： Yong CAO , Kazuya DAITO , Rajkumar JAKKARAJU , Xianmin TANG
发明人： Yong CAO , Kazuya DAITO , Rajkumar JAKKARAJU , Xianmin TANG
IPC分类号： C04B35/581 , C23C14/06
CPC分类号： C04B35/581 , C23C14/0617 , H01L21/02178 , H01L21/02266 , H01L21/0254 , H01L21/02573 , H01L21/02631 , H01L21/0332 , H01L21/32139
摘要： The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.
摘要翻译：本发明一般涉及掺杂氮化铝硬掩模和制造掺杂氮化铝硬掩模的方法。通过在形成氮化铝硬掩模时添加少量的掺杂剂，例如氧，可以显着降低硬掩模的湿蚀刻速率。此外，由于掺杂剂的存在，与未掺杂的氮化铝硬掩模相比，硬掩模的晶粒尺寸减小。减小的晶粒尺寸导致在硬掩模中更平滑的特征，这导致在利用硬掩模时对底层进行更精确的蚀刻。

4. 发明授权

US08557094B2 Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效
标题翻译：具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射
公开(公告)号：US08557094B2
公开(公告)日：2013-10-15
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译：一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

5. 发明申请

US20110278165A1 PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION 有权
标题翻译：用于改善颗粒减少的工艺套件
公开(公告)号：US20110278165A1
公开(公告)日：2011-11-17
申请号：US13106392
申请日：2011-05-12
申请人： MUHAMMAD RASHEED , RONGJUN WANG , ZHENDONG LIU , XINYU FU , XIANMIN TANG
发明人： MUHAMMAD RASHEED , RONGJUN WANG , ZHENDONG LIU , XINYU FU , XIANMIN TANG
IPC分类号： C23C14/04
CPC分类号： C23C14/35 , C23C14/564 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01J37/3411
摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
摘要翻译：本文提供了用于改善颗粒减少的装置。在一些实施例中，一种装置可以包括一个包括具有上部和下部的一体式金属体的处理套件屏蔽件，并且具有穿过一体式金属体设置的开口，其中，上部包括面向开口的表面被配置为围绕物理气相沉积室的目标设置并隔开，并且其中所述面向开口的表面构造成在目标溅射期间限制所述一体金属体的上部的上表面上的颗粒沉积材料从物理气相沉积室的目标。

6. 发明授权

US07659204B2 Oxidized barrier layer 失效
标题翻译：氧化屏障层
公开(公告)号：US07659204B2
公开(公告)日：2010-02-09
申请号：US11691302
申请日：2007-03-26
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/0036 , C23C14/0641 , C23C14/083 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
摘要翻译：在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。

7. 发明授权

US07569125B2 Shields usable with an inductively coupled plasma reactor 有权
标题翻译：可用于电感耦合等离子体反应器的屏蔽
公开(公告)号：US07569125B2
公开(公告)日：2009-08-04
申请号：US11124524
申请日：2005-05-05
申请人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
发明人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.
摘要翻译：可用于等离子体溅射反应器的一体式内屏蔽件，并且从目标件延伸到具有光滑内表面的基座并由屏蔽件的中间部分中的环形凸缘支撑。屏蔽可用于支持用于激发等离子体的RF线圈。外屏蔽件包括在其与内屏蔽凸缘对准的端部上的向外延伸的凸缘，对应于用于RF线圈的支架的内屏蔽件中的凹部的孔和周向布置的气体流动孔。

8. 发明申请

US20070051622A1 Simultaneous ion milling and sputter deposition 审中-公开
标题翻译：同时离子研磨和溅射沉积
公开(公告)号：US20070051622A1
公开(公告)日：2007-03-08
申请号：US11218403
申请日：2005-09-02
申请人： Xianmin Tang , Anantha Subramani , Praburam Gopalraja , Jianming Fu , Jick Yu
发明人： Xianmin Tang , Anantha Subramani , Praburam Gopalraja , Jianming Fu , Jick Yu
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , C23C14/3442 , C23C14/345 , H01J37/3056 , H01J37/3408
摘要： A magnetron sputter reactor including an ion beam source producing a linear beam that strikes the wafer center at an angle of less than 35°. The linear beam extends across the wafer perpendicular to the beam but has a much short dimension along the beam propagation axis while the wafer is being rotated. The ion source may be an anode layer source having a plasma loop between an inner magnetic pole and a surrounding outer magnetic pole with anode overlying the loop with a closed-loop aperture. The beams from the opposed sides of the loop are steered together by making the outer pole stronger than the inner pole. The aperture width may be varied to control the emission intensity.
摘要翻译：包括离子束源的磁控溅射反应器，产生以小于35°的角度撞击晶片中心的线性光束。线性光束垂直于光束延伸穿过晶片，但是当晶片正在旋转时沿着光束传播轴线具有很短的尺寸。离子源可以是在内部磁极和周围的外部磁极之间具有等离子体环的阳极层源，阳极覆盖具有闭环孔径的环路。通过使外极比内极更强，从环的相对侧的梁被转向一起。可以改变孔径宽度以控制发射强度。

9. 发明授权

US07041201B2 Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith 有权
标题翻译：侧壁磁体改善了与其一起使用的电感耦合等离子体和屏蔽层的均匀性
公开(公告)号：US07041201B2
公开(公告)日：2006-05-09
申请号：US10608306
申请日：2003-06-26
申请人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
发明人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.
摘要翻译：本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。当线圈由与主要靶材相同的材料制成时，磁场也用作磁控管，作为次级靶。本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。屏蔽可用于支持RF线圈。

10. 发明申请

US20050252765A1 Method and apparatus for forming a barrier layer on a substrate 审中-公开
公开(公告)号：US20050252765A1
公开(公告)日：2005-11-17
申请号：US11185214
申请日：2005-07-19
申请人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
发明人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
IPC分类号： C23C14/04 , C23C14/32 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , H01L21/2855 , H01L21/76844 , H01L21/76846
摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

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