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1. 发明申请

US20120042825A1 EXTENDED LIFE DEPOSITION RING 审中-公开
标题翻译：延长生命沉积环
公开(公告)号：US20120042825A1
公开(公告)日：2012-02-23
申请号：US13195370
申请日：2011-08-01
申请人： Lara Hawrylchak
发明人： Lara Hawrylchak
IPC分类号： B05C11/00
CPC分类号： H01L21/68735 , C23C16/4585
摘要： A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body.
摘要翻译：提供了一种用于半导体处理室的处理套件。在一个实施例中，处理套件包括环形沉积环主体，其包括凹入主体的上表面的槽，其中槽的最低点延伸到由顶壁限定的至少一半的环体的厚度，一个底壁。在另一个实施例中，处理套件包括环形沉积环体，其包括限定主体上表面的至少一部分的倾斜上壁，其中，倾斜的上壁的峰从主体的内壁延伸至至少内壁与身体外壁之间的一半距离。

2. 发明申请

US20100252417A1 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：US20100252417A1
公开(公告)日：2010-10-07
申请号：US12754473
申请日：2010-04-05
申请人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
发明人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

3. 发明申请

US20090272647A1 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 有权
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：US20090272647A1
公开(公告)日：2009-11-05
申请号：US12433315
申请日：2009-04-30
申请人： Donny Young , Lara Hawrylchak
发明人： Donny Young , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

4. 发明授权

US08795488B2 Apparatus for physical vapor deposition having centrally fed RF energy 有权
标题翻译：用于物理气相沉积的装置具有中央馈送的RF能量
公开(公告)号：US08795488B2
公开(公告)日：2014-08-05
申请号：US13048440
申请日：2011-03-15
申请人： Muhammad Rasheed , Lara Hawrylchak , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Alan Ritchie
发明人： Muhammad Rasheed , Lara Hawrylchak , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Alan Ritchie
IPC分类号： C23C14/40
CPC分类号： H01J37/3405 , H01J37/3411
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
摘要翻译：在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

5. 发明授权

US08070925B2 Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target 有权
标题翻译：物理气相沉积反应器，具有循环对称的RF进料和直流进料到溅射靶
公开(公告)号：US08070925B2
公开(公告)日：2011-12-06
申请号：US12253603
申请日：2008-10-17
申请人： Daniel J. Hoffman , Ying Rui , Karl M. Brown , John Pipitone , Lara Hawrylchak
发明人： Daniel J. Hoffman , Ying Rui , Karl M. Brown , John Pipitone , Lara Hawrylchak
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/54 , H01J37/3444 , H01J37/3455
摘要： In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.
摘要翻译：在具有在天花板上的溅射靶的PVD反应器中，包围旋转磁体组件的导电壳体具有用于旋转磁体轴的中心端口。壳体的导电中空圆筒围绕主轴的外部。 RF功率耦合到从中空圆柱体径向延伸的径向RF连接杆。直流电力耦合到从中空圆柱体径向延伸的另一个径向直流连接杆。

6. 发明申请

US20100096261A1 PHYSICAL VAPOR DEPOSITION REACTOR WITH CIRCULARLY SYMMETRIC RF FEED AND DC FEED TO THE SPUTTER TARGET 有权
标题翻译：物理蒸气沉积反应器，具有圆形对称RF进料和直流进料到喷头目标
公开(公告)号：US20100096261A1
公开(公告)日：2010-04-22
申请号：US12253603
申请日：2008-10-17
申请人： DANIEL J. HOFFMAN , Ying Rui , Karl M. Brown , John Pipitone , Lara Hawrylchak
发明人： DANIEL J. HOFFMAN , Ying Rui , Karl M. Brown , John Pipitone , Lara Hawrylchak
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/54 , H01J37/3444 , H01J37/3455
摘要： In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.
摘要翻译：在具有在天花板上的溅射靶的PVD反应器中，包围旋转磁体组件的导电壳体具有用于旋转磁体轴的中心端口。壳体的导电中空圆筒围绕主轴的外部。 RF功率耦合到从中空圆柱体径向延伸的径向RF连接杆。直流电力耦合到从中空圆柱体径向延伸的另一个径向直流连接杆。

7. 发明授权

US09123511B2 Process kit for RF physical vapor deposition 有权
标题翻译：射频物理气相沉积工艺套件
公开(公告)号：US09123511B2
公开(公告)日：2015-09-01
申请号：US12433315
申请日：2009-04-30
申请人： Donny Young , Lara Hawrylchak
发明人： Donny Young , Lara Hawrylchak
IPC分类号： C23C14/35 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

8. 发明申请

US20120205241A1 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 有权
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：US20120205241A1
公开(公告)日：2012-08-16
申请号：US13457438
申请日：2012-04-26
申请人： Donny Young , Lara Hawrylchak
发明人： Donny Young , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

9. 发明申请

US20110209995A1 Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit 审中-公开
标题翻译：物理气相沉积与可变电容调谐器和反馈电路
公开(公告)号：US20110209995A1
公开(公告)日：2011-09-01
申请号：US12823893
申请日：2010-06-25
申请人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
发明人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

10. 发明申请

US20110036709A1 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：US20110036709A1
公开(公告)日：2011-02-17
申请号：US12850312
申请日：2010-08-04
申请人： Lara Hawrylchak , Kirankumar Savandaiah , Muhammad M. Rasheed , Rongjun Wang , Adolph Miller Allen , Zhigang Xie
发明人： Lara Hawrylchak , Kirankumar Savandaiah , Muhammad M. Rasheed , Rongjun Wang , Adolph Miller Allen , Zhigang Xie
IPC分类号： C23C14/34
CPC分类号： H01L21/67017 , C23C14/34 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

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