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1. 发明申请

US20130256128A1 PROCESS KIT WITH PLASMA-LIMITING GAP 有权
标题翻译：具有等离子体差距的工艺包
公开(公告)号：US20130256128A1
公开(公告)日：2013-10-03
申请号：US13435956
申请日：2012-03-30
申请人： ALAN RITCHIE , DONNY YOUNG
发明人： ALAN RITCHIE , DONNY YOUNG
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/32495 , H01J37/32642 , H01J37/32651 , H01J37/3405
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.
摘要翻译：本文提供了处理基板的设备。在一些实施例中，装置包括处理套件，其包括具有一个或多个侧壁的屏蔽件，该侧壁被配置为围绕第一容积，第一容积设置在处理室的内部容积内; 以及第一环，其可在第一位置和第二位置之间移动，第一位置在第一位置和第二位置之间，其中在第一环的外表面和一个或多个侧壁的内表面之间形成间隙，其中，在约40MHz或更高的频率和约140mTorr或更低的压力下形成的等离子体的间隙宽度小于约两个等离子体护套宽度。

2. 发明申请

US20130256125A1 SUBSTRATE PROCESSING SYSTEM WITH MECHANICALLY FLOATING TARGET ASSEMBLY 有权
标题翻译：具有机械浮动目标组件的基板处理系统
公开(公告)号：US20130256125A1
公开(公告)日：2013-10-03
申请号：US13435949
申请日：2012-03-30
申请人： DONNY YOUNG , ALAN RITCHIE , UDAY PAI , MUHAMMAD RASHEED , KEITH A. MILLER
发明人： DONNY YOUNG , ALAN RITCHIE , UDAY PAI , MUHAMMAD RASHEED , KEITH A. MILLER
IPC分类号： C23C14/34 , C23C14/35
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3417 , H01J37/3435
摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.
摘要翻译：本文提供基板处理系统。在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

3. 发明申请

US20130153412A1 APPARATUS FOR ENABLING CONCENTRICITY OF PLASMA DARK SPACE 有权
标题翻译：实现等离子体空间密集度的设备
公开(公告)号：US20130153412A1
公开(公告)日：2013-06-20
申请号：US13327689
申请日：2011-12-15
申请人： ALAN RITCHIE , DONNY YOUNG , KEITH A. MILLER , MUHAMMAD RASHEED , STEVE SANSONI , Uday Pai
发明人： ALAN RITCHIE , DONNY YOUNG , KEITH A. MILLER , MUHAMMAD RASHEED , STEVE SANSONI , Uday Pai
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/3417 , H01J37/3423 , H01J37/3435 , H01J37/3441
摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
摘要翻译：在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得在支撑构件和密封环以及密封环和目标组件之间形成密封件。

4. 发明申请

US20110240464A1 APPARATUS FOR PHYSICAL VAPOR DEPOSITION HAVING CENTRALLY FED RF ENERGY 有权
标题翻译：具有中央射频能量的物理蒸气沉积装置
公开(公告)号：US20110240464A1
公开(公告)日：2011-10-06
申请号：US13048440
申请日：2011-03-15
申请人： MUHAMMAD RASHEED , LARA HAWRYLCHAK , MICHAEL S. COX , DONNY YOUNG , KIRANKUMAR SAVANDAIAH , ALAN RITCHIE
发明人： MUHAMMAD RASHEED , LARA HAWRYLCHAK , MICHAEL S. COX , DONNY YOUNG , KIRANKUMAR SAVANDAIAH , ALAN RITCHIE
IPC分类号： C23C14/34
CPC分类号： H01J37/3405 , H01J37/3411
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
摘要翻译：在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

5. 发明授权

US09695502B2 Process kit with plasma-limiting gap 有权
公开(公告)号：US09695502B2
公开(公告)日：2017-07-04
申请号：US13435956
申请日：2012-03-30
申请人： Alan Ritchie , Donny Young
发明人： Alan Ritchie , Donny Young
IPC分类号： C23C14/34 , H01J37/32 , H01J37/34
CPC分类号： C23C14/34 , H01J37/32495 , H01J37/32642 , H01J37/32651 , H01J37/3405
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.

6. 发明授权

US09255322B2 Substrate processing system having symmetric RF distribution and return paths 有权
标题翻译：基板处理系统具有对称的RF分布和返回路径
公开(公告)号：US09255322B2
公开(公告)日：2016-02-09
申请号：US13436776
申请日：2012-03-30
申请人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
发明人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
IPC分类号： C23C14/34 , H01J37/32 , C23C14/35 , H01J37/34
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/32577 , H01J37/3405 , H01J37/3411 , H01J37/3414
摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.
摘要翻译：处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

7. 发明授权

US09123511B2 Process kit for RF physical vapor deposition 有权
标题翻译：射频物理气相沉积工艺套件
公开(公告)号：US09123511B2
公开(公告)日：2015-09-01
申请号：US12433315
申请日：2009-04-30
申请人： Donny Young , Lara Hawrylchak
发明人： Donny Young , Lara Hawrylchak
IPC分类号： C23C14/35 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

8. 发明申请

US20130256126A1 SUBSTRATE SUPPORT WITH RADIO FREQUENCY (RF) RETURN PATH 有权
标题翻译：基站支持无线射频（RF）返回路径
公开(公告)号：US20130256126A1
公开(公告)日：2013-10-03
申请号：US13435766
申请日：2012-03-30
申请人： ALAN RITCHIE , DONNY YOUNG , WEI W. WANG , ANANTHKRISHNA JUPUDI , THANH X. NGUYEN , KIRANKUMAR SAVANDAIAH
发明人： ALAN RITCHIE , DONNY YOUNG , WEI W. WANG , ANANTHKRISHNA JUPUDI , THANH X. NGUYEN , KIRANKUMAR SAVANDAIAH
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/32091 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/32706 , H01J37/32715 , H01J37/3405 , H01J37/3411
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.
摘要翻译：本文提供了处理基板的设备。在一些实施例中，用于处理衬底的装置包括衬底支撑件，其可以包括具有用于在其上支撑衬底的表面的电介质构件; 一个或多个第一导电构件，其布置在所述电介质构件下方并且具有邻近所述电介质构件的电介质构件面向表面; 以及设置在所述一个或多个第一导电构件周围并且接触所述一个或多个第一导电构件的第二导电构件，使得通过RF源提供给所述衬底的RF能量通过沿着所述衬底支撑件的所述电介质构件面向表面径向向外径向向外移动或更多的第一导电构件，并且沿第一导电构件的第一表面布置成大致平行于一个或多个第一导电构件的沿着电介质层面向表面行进的周边边缘表面。

9. 发明申请

US20120205241A1 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 有权
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：US20120205241A1
公开(公告)日：2012-08-16
申请号：US13457438
申请日：2012-04-26
申请人： Donny Young , Lara Hawrylchak
发明人： Donny Young , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

10. 发明申请

US20110209995A1 Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit 审中-公开
标题翻译：物理气相沉积与可变电容调谐器和反馈电路
公开(公告)号：US20110209995A1
公开(公告)日：2011-09-01
申请号：US12823893
申请日：2010-06-25
申请人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
发明人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

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