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1. 发明授权

US06936543B2 CMP method utilizing amphiphilic nonionic surfactants 有权
标题翻译：使用两亲性非离子表面活性剂的CMP方法
公开(公告)号：US06936543B2
公开(公告)日：2005-08-30
申请号：US10269864
申请日：2002-10-11
申请人： David J. Schroeder , Kevin J. Moeggenborg , Homer Chou , Jeffrey P. Chamberlain , Joseph D. Hawkins , Phillip Carter
发明人： David J. Schroeder , Kevin J. Moeggenborg , Homer Chou , Jeffrey P. Chamberlain , Joseph D. Hawkins , Phillip Carter
IPC分类号： C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/312 , H01L21/321 , H01L21/302 , C09K13/00
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the substrate. The CMP system comprises (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate comprising a first metal layer and a second, different metal layer. The first metal layer is polishing with a first CMP system comprising an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system comprising (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier.
摘要翻译：本发明提供抛光衬底的方法，其包括（i）使包含铜的至少一个金属层与化学机械抛光（CMP）系统接触的衬底和（ii）研磨包含铜的至少一部分金属以抛光底物。 CMP系统包括（a）研磨剂，（b）两亲性非离子表面活性剂，（c）氧化金属层的方法，（d）有机酸，（e）缓蚀剂，和（f）液体载体。本发明还提供一种抛光包括第一金属层和第二不同金属层的基板的两步法。第一金属层用包括研磨剂和液体载体的第一CMP系统抛光，并且第二金属层用第二CMP系统抛光，所述第二CMP系统包括（a）研磨剂，（b）两亲性非离子表面活性剂，和（c）液体载体。

2. 发明授权

US06974777B2 CMP compositions for low-k dielectric materials 有权
标题翻译：用于低k电介质材料的CMP组合物
公开(公告)号：US06974777B2
公开(公告)日：2005-12-13
申请号：US10165100
申请日：2002-06-07
申请人： Kevin J. Moeggenborg , Homer Chou , Joseph D. Hawkins , Jeffrey P. Chamberlain
发明人： Kevin J. Moeggenborg , Homer Chou , Joseph D. Hawkins , Jeffrey P. Chamberlain
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/312 , H01L21/321 , H01L21/302 , C09K13/00 , C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02126 , H01L21/31053 , H01L21/312
摘要： The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate.
摘要翻译：本发明提供了一种抛光含有低k电介质层的衬底的方法，包括（i）使衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）研磨剂，抛光垫或其组合，（b）两亲性非离子表面活性剂，和（c）液体载体，和（ii）研磨至少一部分基材以抛光基材。

3. 发明授权

US06612911B2 Alkali metal-containing polishing system and method 失效
公开(公告)号：US06612911B2
公开(公告)日：2003-09-02
申请号：US10044174
申请日：2002-01-11
申请人： Phillip Carter , Gregory H. Bogush , Francesco M. De Rege , Jeffrey P. Chamberlain , David J. Schroeder , Brian L. Mueller
发明人： Phillip Carter , Gregory H. Bogush , Francesco M. De Rege , Jeffrey P. Chamberlain , David J. Schroeder , Brian L. Mueller
IPC分类号： B24B1900
CPC分类号： C09G1/02 , C09K3/1463 , C09K3/1472
摘要： The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.

4. 发明授权

US06821897B2 Method for copper CMP using polymeric complexing agents 有权
标题翻译：使用聚合物络合剂的铜CMP的方法
公开(公告)号：US06821897B2
公开(公告)日：2004-11-23
申请号：US10246280
申请日：2002-09-18
申请人： David J. Schroeder , Phillip Carter , Jeffrey P. Chamberlain , Kyle Miller , Isaac K. Cherian
发明人： David J. Schroeder , Phillip Carter , Jeffrey P. Chamberlain , Kyle Miller , Isaac K. Cherian
IPC分类号： H01L2144
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively-charged polymer or copolymer, (ii) contacting the substrate with the poloshing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively-charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of about 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively-charged polymer or copolymer with the abrasive.
摘要翻译：本发明提供了一种抛光包含铜的金属层的衬底的方法。该方法包括以下步骤：（i）提供包括液体载体，抛光垫，研磨剂和带负电荷的聚合物或共聚物的化学机械抛光系统，（ii）使基底与爆破系统接触，和（ iii）研磨衬底的至少一部分以抛光衬底的金属层。带负电荷的聚合物或共聚物包含一种或多种选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐的单体，其分子量为约20,000g / mol或更高，并且涂覆至少一部分研磨剂使得研磨剂具有在带负电荷的聚合物或共聚物与研磨剂相互作用时降低的ζ电位值。

5. 发明授权

US06776810B1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US06776810B1
公开(公告)日：2004-08-17
申请号：US10073844
申请日：2002-02-11
申请人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G102
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.
摘要翻译：本发明提供一种化学机械抛光系统，以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或更多，其中所述磨料包含与带正电荷的电解液静电相关的颗粒。

6. 发明授权

US06726534B1 Preequilibrium polishing method and system 失效
标题翻译：平衡抛光方法和系统
公开(公告)号：US06726534B1
公开(公告)日：2004-04-27
申请号：US10085698
申请日：2002-02-28
申请人： Gregory H. Bogush , Jeffrey P. Chamberlain , Paul M. Feeney , Brian L. Mueller , David J. Schroeder , Alicia F. Walters
发明人： Gregory H. Bogush , Jeffrey P. Chamberlain , Paul M. Feeney , Brian L. Mueller , David J. Schroeder , Alicia F. Walters
IPC分类号： B24B100
CPC分类号： B24B37/0056 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/31053
摘要： The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.
摘要翻译：本发明提供了一种抛光系统，其包括液体载体，碱金属离子，氢氧根离子以及抛光垫和/或研磨剂。研磨剂可以分散在抛光系统的液体载体中或结合到抛光垫上。碱金属离子可以是任何一价的I族金属离子，并且以约0.05M以上的浓度存在于抛光体系中。氢氧根离子以足够的量存在以使系统具有约9或更高的pH。抛光系统的液体载体可以是任何合适的极性溶剂，例如水。本发明还提供一种抛光方法，其包括在制备抛光系统之后，用抛光系统在约6小时或更短时间内抛光基底的一部分。

7. 发明授权

US07306637B2 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US07306637B2
公开(公告)日：2007-12-11
申请号：US10855276
申请日：2004-05-27
申请人： Isaac K Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G1/02 , C09G1/04 , B24B1/00
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
摘要翻译：本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或其中磨料包含与带正电荷的聚电解质静电相关的颗粒。

8. 发明授权

US06431953B1 CMP process involving frequency analysis-based monitoring 失效
标题翻译： CMP过程涉及基于频率分析的监测
公开(公告)号：US06431953B1
公开(公告)日：2002-08-13
申请号：US09934106
申请日：2001-08-21
申请人： Phillip W. Carter , Jeffrey P. Chamberlain
发明人： Phillip W. Carter , Jeffrey P. Chamberlain
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G05B2219/34048 , G05B2219/37534 , G05B2219/49085
摘要： The invention provides a method, for monitoring a chemical-mechanical polishing process, comprising receiving a real-time data signal from a chemical-mechanical polishing process, wherein the real-time data signal pertains to a frictional force, torque, or motor current, converting the data signal into a power spectrum of signals with different frequencies whose sum equals that of the original data signal, identifying and monitoring the signal components of the power spectrum corresponding to an aspect of the chemical-mechanical polishing process, detecting a change in the amplitude or frequency of the signal component, and altering the chemical-mechanical polishing process in response to the detected change. The invention also provides an apparatus for carrying out the aforementioned method.
摘要翻译：本发明提供一种用于监测化学机械抛光工艺的方法，包括从化学机械抛光工艺接收实时数据信号，其中实时数据信号涉及摩擦力，转矩或电动机电流，将数据信号转换成具有与原始数据信号的和等于其总和的不同频率的信号的功率谱，识别和监测与化学机械抛光处理的一个方面对应的功率谱的信号分量，检测信号分量的振幅或频率，以及响应于检测到的变化而改变化学机械抛光过程。本发明还提供一种用于执行上述方法的装置。

9. 发明申请

US20080220610A1 Silicon oxide polishing method utilizing colloidal silica 审中-公开
标题翻译：使用胶体二氧化硅的氧化硅抛光方法
公开(公告)号：US20080220610A1
公开(公告)日：2008-09-11
申请号：US11478004
申请日：2006-06-29
申请人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
发明人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The inventive method comprises chemically-mechanically polishing a substrate with a polishing composition comprising a liquid carrier and sol-gel colloidal silica abrasive particles.
摘要翻译：本发明的方法包括用包含液体载体和溶胶 - 凝胶胶态二氧化硅磨料颗粒的抛光组合物对衬底进行化学机械抛光。

10. 发明申请

US20080020680A1 Rate-enhanced CMP compositions for dielectric films 审中-公开
标题翻译：介电膜的速率增强CMP组成
公开(公告)号：US20080020680A1
公开(公告)日：2008-01-24
申请号：US11491612
申请日：2006-07-24
申请人： Robert Vacassy , Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain
发明人： Robert Vacassy , Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain
IPC分类号： B24B1/00 , B24D3/02 , B24B7/30 , C09K3/14
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.
摘要翻译：本发明提供了一种主要由二氧化硅，氧化剂，季铵化合物和水组成的化学 - 机械抛光组合物。本发明还提供了用上述抛光组合物对衬底进行化学机械抛光的方法。抛光组合物在用于抛光电介质膜时提供了增强的抛光速率。

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