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    • 4. 发明授权
    • CMP method for noble metals
    • 贵金属的CMP方法
    • US06527622B1
    • 2003-03-04
    • US10054059
    • 2002-01-22
    • Vlasta BrusicFrancesco M. De RegeKevin J. MoeggenborgIsaac K. CherianRenjie Zhou
    • Vlasta BrusicFrancesco M. De RegeKevin J. MoeggenborgIsaac K. CherianRenjie Zhou
    • B24B100
    • H01L21/3212B24B37/044C09G1/02C09K3/1463C23F3/04C23F3/06H01L28/65
    • The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP systems each comprise an abrasive and/or polishing pad, a liquid carrier, and optionally one or more polishing additives. In a first embodiment, the polishing additives are selected from the group consisting of diketones, diketonates, heterocyclic nitrogen-containing compounds, heterocyclic oxygen-containing compounds, heterocyclic phosphorus-containing compounds, urea compounds, nitrogen-containing compounds that can be zwitterionic compounds, salts thereof, and combinations thereof. In a second embodiment, the polishing additive is a metal compound with two or more oxidation states and is used in conjunction with a peroxy-type oxidizer. In a third embodiment, the CMP system comprises &agr;-alumina and fumed alumina, wherein the weight ratio of &agr;-alumina to fumed alumina is about 0.6:1 to about 9:1.
    • 本发明提供一种抛光包括贵金属的基材的方法,包括(i)使基板与CMP系统接触,以及(ii)研磨基材的至少一部分以抛光基材。 CMP系统各自包括磨料和/或抛光垫,液体载体和任选的一种或多种抛光添加剂。 在第一实施方案中,抛光添加剂选自二酮,二酮,杂环含氮化合物,含杂环氧的化合物,含杂环的化合物,尿素化合物,可以是两性离子化合物的含氮化合物, 其盐,及其组合。 在第二实施方案中,抛光添加剂是具有两种或更多种氧化态的金属化合物,并与过氧型氧化剂结合使用。 在第三个实施方案中,CMP系统包括α-氧化铝和热解氧化铝,其中α-氧化铝与热解氧化铝的重量比为约0.6:1至约9:1。
    • 7. 发明授权
    • Chemical-mechanical polishing composition and method for using the same
    • 化学机械抛光组合物及其使用方法
    • US07485241B2
    • 2009-02-03
    • US10660379
    • 2003-09-11
    • David J. SchroederKevin J. Moeggenborg
    • David J. SchroederKevin J. Moeggenborg
    • C09K5/00
    • C09G1/02C09K3/1409C09K3/1463H01L21/3212
    • The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.
    • 本发明提供一种化学机械抛光组合物,其包含:(a)热解法二氧化硅颗粒,(b)约5×10 -3至约10毫摩尔/千克至少一种选自钙,锶,钡, 及其混合物,基于抛光组合物的总重量,(c)约0.1至约15重量% %的氧化剂,和(d)包含水的液体载体。 本发明还提供一种抛光组合物,其任选地包含氧化剂,其包含约5×10 -3至约10毫摩尔/千克至少一种选自钙,锶及其混合物的至少一种碱土金属。 本发明还提供了使用上述抛光组合物抛光衬底的方法。
    • 8. 发明授权
    • Method of reducing in-trench smearing during polishing
    • 减少抛光过程中槽内拖尾的方法
    • US06841479B2
    • 2005-01-11
    • US10119862
    • 2002-04-10
    • Isaac K. CherianPaul M. FeeneyKevin J. Moeggenborg
    • Isaac K. CherianPaul M. FeeneyKevin J. Moeggenborg
    • H01L21/02H01L21/3105H01L21/321H01L21/762H01L21/302
    • H01L21/76224H01L21/31053H01L21/31058H01L21/3212H01L28/91
    • The invention provides a method of reducing in-trench smearing during polishing. The method comprises providing a substrate comprising a first layer comprising an insulating material, a second layer comprising a filling material, and a plurality of field and trench regions. A polymeric material is infiltrated over the substrate, wherein the polymeric material fills the trench regions and covers the field regions. The polymeric material optionally is removed from the field regions, followed by baking of the substrate such that the polymeric material in the trench regions becomes recessed below the insulating material of the field regions. The substrate is then subjected to a temperature of about 100° C. or more for about 30 minutes or longer, such that during polishing of the substrate, smearing of the filling material in the trench regions is reduced as compared to polishing of the substrate under the same conditions except for subjecting the substrate to the temperature of about 100° C. or more for about 30 minutes or longer. When desirable, a layer of additional material can be deposited over the polymeric material such that it forms a layer over the polymeric material in the trench regions and the filling material in the field regions. The substrate is then polished to obtain a substantially planar surface.
    • 本发明提供一种在抛光过程中减少槽内拖尾的方法。 该方法包括提供一种包括第一层的衬底,该第一层包括绝缘材料,第二层包括填充材料,以及多个场和沟槽区域。 聚合物材料渗透到基底上,其中聚合物材料填充沟槽区域并覆盖场区域。 聚合物材料任选地从场区域移除,随后烘烤基底,使得沟槽区域中的聚合物材料变得凹陷在场区域的绝缘材料之下。 然后将衬底经受约100℃或更长的温度约30分钟或更长时间,使得在衬底的抛光期间,与在衬底下方的衬底的抛光相比,沟槽区域中填充材料的污迹减少 除了对基板进行约100℃以上的温度约30分钟以上的条件以外,进行相同的条件。 当需要时,可以在聚合物材料上沉积一层附加材料,使得其在沟槽区域中的聚合物材料和场区域中的填充材料上形成一层。 然后将基底抛光以获得基本平坦的表面。