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1. 发明申请

US20080220610A1 Silicon oxide polishing method utilizing colloidal silica 审中-公开
标题翻译：使用胶体二氧化硅的氧化硅抛光方法
公开(公告)号：US20080220610A1
公开(公告)日：2008-09-11
申请号：US11478004
申请日：2006-06-29
申请人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
发明人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The inventive method comprises chemically-mechanically polishing a substrate with a polishing composition comprising a liquid carrier and sol-gel colloidal silica abrasive particles.
摘要翻译：本发明的方法包括用包含液体载体和溶胶 - 凝胶胶态二氧化硅磨料颗粒的抛光组合物对衬底进行化学机械抛光。

2. 发明申请

US20080020680A1 Rate-enhanced CMP compositions for dielectric films 审中-公开
标题翻译：介电膜的速率增强CMP组成
公开(公告)号：US20080020680A1
公开(公告)日：2008-01-24
申请号：US11491612
申请日：2006-07-24
申请人： Robert Vacassy , Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain
发明人： Robert Vacassy , Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain
IPC分类号： B24B1/00 , B24D3/02 , B24B7/30 , C09K3/14
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.
摘要翻译：本发明提供了一种主要由二氧化硅，氧化剂，季铵化合物和水组成的化学 - 机械抛光组合物。本发明还提供了用上述抛光组合物对衬底进行化学机械抛光的方法。抛光组合物在用于抛光电介质膜时提供了增强的抛光速率。

3. 发明授权

US07294576B1 Tunable selectivity slurries in CMP applications 有权
标题翻译： CMP应用中可调谐的选择性浆料
公开(公告)号：US07294576B1
公开(公告)日：2007-11-13
申请号：US11478023
申请日：2006-06-29
申请人： Zhan Chen , Robert Vacassy , Benjamin Bayer , Dinesh Khanna
发明人： Zhan Chen , Robert Vacassy , Benjamin Bayer , Dinesh Khanna
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.
摘要翻译：本发明提供一种制备用至少第一层和第二层来抛光衬底的化学机械抛光组合物的方法。该方法包括提供包含磨料的第一化学机械抛光组合物，其与第二层相比具有对第一层的选择性;以及第二化学机械抛光组合物，其包含与第一层相比具有不同选择性的研磨剂第二层，其中所述第二化学机械抛光组合物在所述第一化学机械抛光组合物的存在下是稳定的，并且以比例混合所述第一和第二化学机械抛光组合物以获得比较所述第一层的最终选择性到第二层。本发明还提供了一种化学机械抛光衬底的方法。

4. 发明申请

US20100190339A1 COMPOSITIONS AND METHODS FOR CHEMICAL-MECHANICAL POLISHING OF PHASE CHANGE MATERIALS 审中-公开
标题翻译：化学机械抛光相变材料的组合物和方法
公开(公告)号：US20100190339A1
公开(公告)日：2010-07-29
申请号：US12670495
申请日：2008-07-24
申请人： Zhan Chen , Kai Luo , Robert Vacassy
发明人： Zhan Chen , Kai Luo , Robert Vacassy
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , G11C13/0004 , H01L21/31053
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change material (PCM), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises a particulate abrasive material in combination with lysine, an optional oxidizing agent, and an aqueous carrier therefor. CMP methods for polishing a phase change material-containing substrate utilizing the composition are also disclosed.
摘要翻译：本发明提供了适用于抛光包括相变材料（PCM）的基材的化学机械抛光（CMP）组合物，例如锗 - 锑 - 碲（GST）合金。组合物包含与赖氨酸组合的颗粒磨料，任选的氧化剂及其水性载体。还公开了利用该组合物研磨含相变材料的衬底的CMP方法。

5. 发明申请

US20070209287A1 Composition and method to polish silicon nitride 审中-公开
标题翻译：抛光氮化硅的组成和方法
公开(公告)号：US20070209287A1
公开(公告)日：2007-09-13
申请号：US11374238
申请日：2006-03-13
申请人： Zhan Chen , Robert Vacassy , Phillip Carter , Jeffrey Dysard
发明人： Zhan Chen , Robert Vacassy , Phillip Carter , Jeffrey Dysard
IPC分类号： B24D3/02 , B24B7/30 , B24B29/00 , C09K3/14 , B24B1/00
CPC分类号： C09G1/02 , H01L21/31053
摘要： The inventive chemical-mechanical polishing composition comprises an abrasive, a nitride accelerator, and water, and has a pH of about 1 to about 6. The inventive method of polishing a substrate involves the use of the aforesaid polishing composition and is particularly useful in polishing a substrate containing silicon nitride.
摘要翻译：本发明的化学机械抛光组合物包含研磨剂，氮化物促进剂和水，并且具有约1至约6的pH。本发明的抛光基材的方法涉及使用上述抛光组合物，并且特别适用于抛光含有氮化硅的衬底。

6. 发明授权

US09129907B2 Onium-containing CMP compositions and methods of use thereof 有权
标题翻译：含鎓的CMP组合物及其使用方法
公开(公告)号：US09129907B2
公开(公告)日：2015-09-08
申请号：US11517909
申请日：2006-09-08
申请人： Michael L. White , Zhan Chen
发明人： Michael L. White , Zhan Chen
IPC分类号： H01L21/3105 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。该组合物具有约5或更低的pH，并且包含胶体二氧化硅，至少一种选自鏻盐，锍盐及其组合的鎓化合物及其水性载体; 还公开了利用该组合物来研磨半导体材料的表面的CMP方法。

7. 发明授权

US08759216B2 Compositions and methods for polishing silicon nitride materials 有权
标题翻译：用于研磨氮化硅材料的组合物和方法
公开(公告)号：US08759216B2
公开(公告)日：2014-06-24
申请号：US11448205
申请日：2006-06-07
申请人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
发明人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
IPC分类号： H01L21/302 , H01L21/336 , C03C15/00 , C03C25/68
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
摘要翻译：本发明提供一种研磨含氮化硅的基板的方法。该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。所述至少一种酸性组分的pKa在约1至4.5的范围内。所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。

8. 发明授权

US08247327B2 Methods and compositions for polishing silicon-containing substrates 有权
标题翻译：抛光含硅基材的方法和组合物
公开(公告)号：US08247327B2
公开(公告)日：2012-08-21
申请号：US12221023
申请日：2008-07-30
申请人： Francesco De Rege Thesauro , Zhan Chen
发明人： Francesco De Rege Thesauro , Zhan Chen
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates.
摘要翻译：本发明提供用于抛光含硅基材的化学机械抛光（CMP）组合物和方法。本发明的方法包括以下步骤：使含硅衬底与抛光垫和水性CMP组合物接触，并且在保持CMP组合物的一部分与表面接触的同时引起抛光垫和衬底之间的相对运动所述衬底磨损所述衬底的至少一部分。 CMP组合物包括二氧化铈研磨剂，具有pKa约4至约9的官能团的抛光添加剂，具有亲水部分和亲油部分的非离子表面活性剂，其中亲水部分的数均分子量为约500g / mol以上，和水性载体，其中组合物的pH为7以下。该方法减少了晶片上的缺陷，特别是高去除的局部区域。该方法对于相对于含半导体硅的衬底以高速率抛光介电含硅衬底也是有用的。

9. 发明申请

US20080060278A1 Onium-containing CMP compositions and methods of use thereof 有权
标题翻译：含鎓的CMP组合物及其使用方法
公开(公告)号：US20080060278A1
公开(公告)日：2008-03-13
申请号：US11517909
申请日：2006-09-08
申请人： Michael L. White , Zhan Chen
发明人： Michael L. White , Zhan Chen
IPC分类号： B24D3/02 , C09K13/00 , C09K3/14 , B24B1/00
CPC分类号： H01L21/31053 , C09G1/02
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。该组合物具有约5或更低的pH，并且包含胶体二氧化硅，至少一种选自鏻盐，锍盐及其组合的鎓化合物及其水性载体; 还公开了利用该组合物来研磨半导体材料的表面的CMP方法。

10. 发明申请

US20150141600A1 METHOD FOR SYNTHESIZING HOMOPOLYMER N-VINYL BUTYROLACTAM WITH SUPER-LOW MOLECULAR WEIGHT AND SUPER-LOW RESIDUAL MONOMER 有权
标题翻译：用于合成具有超低分子量和超低残留单体的均聚物N-乙烯基丁二酰胺的方法
公开(公告)号：US20150141600A1
公开(公告)日：2015-05-21
申请号：US14401743
申请日：2012-07-23
申请人： Yu Wang , Wei Liu , Zhan Chen
发明人： Yu Wang , Wei Liu , Zhan Chen
IPC分类号： C08F24/00
CPC分类号： C08F24/00 , C08F4/38 , C08F6/003 , C08F126/06 , C08L39/04
摘要： The present invention relates to a synthesis method of ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content, which comprises: using N-vinyl butyrolactam monomers and water with the mass ratio of 3:17˜8:12, then based on the N-vinyl butyrolactam monomers, using 0.5%˜5.0% by weight of initiators, 0.1%˜5.0% by weight of a catalyst, and 0.1%˜10% by weight of a molecular weight regulator; in the presence of an inert gas, adding the above mentioned raw materials in batches, adjusting the pH of the reaction system to 7.0-8.0 with an activator, reacting at the polymerization temperature of 60-85° C.; finally adding a peroxide and keeping the temperature for 2 hours, to obtain an aqueous solution of ultra low molecular weight homopolymerized N-vinyl butyrolactam, drying the aqueous solution to obtain a powdery ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content, whose K value is 12-17, whose molecular weight is 2000-15000, and whose residual monomer content is less than 10 ppm, so the present invention is designed skillfully and simple in preparation, the residual monomer content of the ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content prepared is less than 10 ppm, and the K value is 12-17, therefore the present invention is suitable for large-scale popularization.
摘要翻译：本发明涉及具有超低残留单体含量的超低分子量均聚N-乙烯基丁内酰胺的合成方法，其包括：使用N-乙烯基丁内酰胺单体和质量比为3：17〜8：12的水，然后基于N-乙烯基丁内酰胺单体，使用0.5重量％〜5.0重量％的引发剂，0.1重量％〜5.0重量％的催化剂和0.1重量％〜10重量％的分子量调节剂; 在惰性气体的存在下，分批加入上述原料，用活化剂将反应体系的pH调节至7.0-8.0，在聚合温度为60-85℃下反应; 最后加入过氧化物并保持温度2小时，得到超低分子量均聚N-乙烯基丁内酰胺水溶液，干燥该水溶液，得到具有超低残留单体的粉状超低分子量均聚N-乙烯基丁内酰胺其K值为12-17，分子量为2000-15000，残留单体含量小于10ppm，本发明设计巧妙简单，超低分子量的残留单体含量制备的超低残留单体含量的均聚的N-乙烯基丁内酰胺重量小于10ppm，K值为12-17，因此本发明适用于大规模普及。

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