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1. 发明申请

US20080220610A1 Silicon oxide polishing method utilizing colloidal silica 审中-公开
标题翻译：使用胶体二氧化硅的氧化硅抛光方法
公开(公告)号：US20080220610A1
公开(公告)日：2008-09-11
申请号：US11478004
申请日：2006-06-29
申请人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
发明人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The inventive method comprises chemically-mechanically polishing a substrate with a polishing composition comprising a liquid carrier and sol-gel colloidal silica abrasive particles.
摘要翻译：本发明的方法包括用包含液体载体和溶胶 - 凝胶胶态二氧化硅磨料颗粒的抛光组合物对衬底进行化学机械抛光。

2. 发明申请

US20080020680A1 Rate-enhanced CMP compositions for dielectric films 审中-公开
标题翻译：介电膜的速率增强CMP组成
公开(公告)号：US20080020680A1
公开(公告)日：2008-01-24
申请号：US11491612
申请日：2006-07-24
申请人： Robert Vacassy , Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain
发明人： Robert Vacassy , Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain
IPC分类号： B24B1/00 , B24D3/02 , B24B7/30 , C09K3/14
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.
摘要翻译：本发明提供了一种主要由二氧化硅，氧化剂，季铵化合物和水组成的化学 - 机械抛光组合物。本发明还提供了用上述抛光组合物对衬底进行化学机械抛光的方法。抛光组合物在用于抛光电介质膜时提供了增强的抛光速率。

3. 发明授权

US07294576B1 Tunable selectivity slurries in CMP applications 有权
标题翻译： CMP应用中可调谐的选择性浆料
公开(公告)号：US07294576B1
公开(公告)日：2007-11-13
申请号：US11478023
申请日：2006-06-29
申请人： Zhan Chen , Robert Vacassy , Benjamin Bayer , Dinesh Khanna
发明人： Zhan Chen , Robert Vacassy , Benjamin Bayer , Dinesh Khanna
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.
摘要翻译：本发明提供一种制备用至少第一层和第二层来抛光衬底的化学机械抛光组合物的方法。该方法包括提供包含磨料的第一化学机械抛光组合物，其与第二层相比具有对第一层的选择性;以及第二化学机械抛光组合物，其包含与第一层相比具有不同选择性的研磨剂第二层，其中所述第二化学机械抛光组合物在所述第一化学机械抛光组合物的存在下是稳定的，并且以比例混合所述第一和第二化学机械抛光组合物以获得比较所述第一层的最终选择性到第二层。本发明还提供了一种化学机械抛光衬底的方法。

4. 发明申请

US20050211950A1 Chemical-mechanical polishing composition and method for using the same 审中-公开
标题翻译：化学机械抛光组合物及其使用方法
公开(公告)号：US20050211950A1
公开(公告)日：2005-09-29
申请号：US10807944
申请日：2004-03-24
申请人： Francesco de Rege Thesauro , Kevin Moeggenborg , Vlasta Brusic , Benjamin Bayer
发明人： Francesco de Rege Thesauro , Kevin Moeggenborg , Vlasta Brusic , Benjamin Bayer
IPC分类号： C09G1/02 , H01L21/321 , C09K13/00 , B44C1/22 , H01L21/302
CPC分类号： C09G1/02
摘要： The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention also provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, magnesium, zinc, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention further provides methods of polishing a substrate using each of the above-described chemical-mechanical polishing compositions.
摘要翻译：本发明提供一种化学机械抛光组合物，其包括：（a）包含α-氧化铝的磨料，（b）约0.05至约50mmol / kg的选自钙，锶，钡中的至少一种金属的离子，及其混合物，基于抛光组合物的总重量，和（c）包含水的液体载体。本发明还提供一种化学机械抛光组合物，其包含：（a）选自α-氧化铝，γ-氧化铝，δ-氧化铝，θ-氧化铝，金刚石，碳化硼，碳化硅，碳化钨，氮化钛及其混合物，（b）基于总重量，约0.05至约3.5mmol / kg的选自钙，锶，钡，镁，锌及其混合物的至少一种金属的离子的抛光组合物，和（c）包含水的液体载体。本发明还提供了使用上述每种化学 - 机械抛光组合物抛光基材的方法。

5. 发明申请

US20060024967A1 Polishing composition for noble metals 有权
标题翻译：贵金属抛光组合物
公开(公告)号：US20060024967A1
公开(公告)日：2006-02-02
申请号：US10901420
申请日：2004-07-28
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher Thompson , Benjamin Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher Thompson , Benjamin Bayer
IPC分类号： H01L21/461
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.
摘要翻译：本发明提供一种抛光组合物和一种化学机械抛光包含贵金属的基材的方法，所述抛光组合物包含（a）氧化贵金属的氧化剂，（b）选自硫酸盐，硼酸盐，硝酸盐和磷酸盐，和（c）液体载体。本发明还提供一种抛光组合物和一种化学机械抛光包含钌的基材的方法，该抛光组合物包含（a）氧化高于+4氧化态的钌的氧化剂，（b）选自下组的抛光添加剂：由金属螯合聚合物，金属螯合剂，有机硫醇，还原四氧化钌的化合物，内酯和α-羟基羰基化合物组成。

6. 发明申请

US20050148290A1 Chemical-mechanical polishing of metals in an oxidized form 有权
标题翻译：化学机械抛光氧化形式的金属
公开(公告)号：US20050148290A1
公开(公告)日：2005-07-07
申请号：US10753138
申请日：2004-01-07
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin Bayer
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , B24B1/00
CPC分类号： H01L21/3212
摘要： The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.
摘要翻译：本发明提供了一种用于抛光包含氧化形式的金属的衬底的方法，所述方法包括以下步骤：（a）提供包含氧化形式的金属的衬底，（b）将衬底的一部分与化学 - 机械抛光系统，包括：（i）抛光组分，（ii）还原剂和（iii）液体载体，和（c）研磨至少一部分氧化形式的金属以抛光所述基材。还原剂可以选自3-羟基-4-吡咯烷酮，α-羟基-γ-丁内酯，抗坏血酸，硼烷，硼氢化物，二烷基胺硼烷，甲醛，甲酸，氢，氢醌，羟胺，次磷酸亚磷酸，氧化态的金属或金属离子具有小于氧化形式的金属的标准氧化还原电位，三羟基苯，溶剂化电子，亚硫酸，其盐及其混合物的标准氧化还原电位。

7. 发明授权

US06763746B2 Adjusting device and associated actuating tool 失效
标题翻译：调整装置和相关联的致动工具
公开(公告)号：US06763746B2
公开(公告)日：2004-07-20
申请号：US10176373
申请日：2002-06-21
申请人： Benjamin Bayer , Roland Gamisch , Bernd Kraemer
发明人： Benjamin Bayer , Roland Gamisch , Bernd Kraemer
IPC分类号： B25B1100
CPC分类号： B60S1/0469 , B60S1/0413 , B60S1/0433
摘要： The invention relates to a device for adjusting a relative position between two components, having a support part which is fastened to the one component and has a through-opening in a holder section. The device includes a setting screw which has an external thread that engages in the region of its one end in an internal thread firmly arranged on the other component. The setting screw has rotary actuating means on its other end, has a radially projecting, fixed collar between its ends, and passes through the through-opening on a side of the collar remote from the other component. The setting screw carries a lock nut on a side of the holder section remote from the other component, the collar and lock nut axially restraining the holder section between them for fixing a relative position between setting screw and support part.
摘要翻译：本发明涉及一种用于调节两个部件之间的相对位置的装置，该装置具有固定在一个部件上的支撑部分并且在保持器部分中具有通孔。该装置包括一个定位螺钉，该定位螺钉具有外螺纹，该外螺纹在其一端的区域中啮合在牢固地布置在另一部件上的内螺纹中。固定螺钉在其另一端具有旋转致动装置，在其端部之间具有径向突出的固定套环，并且穿过套环远离另一部件的一侧的通孔。定位螺丝在远离另一部件的保持器部分的一侧承载锁紧螺母，轴环和锁紧螺母在其间轴向地限制保持器部分，以固定固定螺钉和支撑部件之间的相对位置。

8. 发明申请

US20060076317A1 CMP composition with a polymer additive for polishing noble metals 有权
公开(公告)号：US20060076317A1
公开(公告)日：2006-04-13
申请号：US10963108
申请日：2004-10-12
申请人： Francesco De Rege Thesauro , Benjamin Bayer
发明人： Francesco De Rege Thesauro , Benjamin Bayer
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： C09G1/02 , H01L21/3212 , H01L28/65
摘要： The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent, (c) an ethylene-oxide containing polymer, and (d) a liquid carrier, and abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate.

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