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1. 发明授权

US06821897B2 Method for copper CMP using polymeric complexing agents 有权
标题翻译：使用聚合物络合剂的铜CMP的方法
公开(公告)号：US06821897B2
公开(公告)日：2004-11-23
申请号：US10246280
申请日：2002-09-18
申请人： David J. Schroeder , Phillip Carter , Jeffrey P. Chamberlain , Kyle Miller , Isaac K. Cherian
发明人： David J. Schroeder , Phillip Carter , Jeffrey P. Chamberlain , Kyle Miller , Isaac K. Cherian
IPC分类号： H01L2144
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively-charged polymer or copolymer, (ii) contacting the substrate with the poloshing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively-charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of about 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively-charged polymer or copolymer with the abrasive.
摘要翻译：本发明提供了一种抛光包含铜的金属层的衬底的方法。该方法包括以下步骤：（i）提供包括液体载体，抛光垫，研磨剂和带负电荷的聚合物或共聚物的化学机械抛光系统，（ii）使基底与爆破系统接触，和（ iii）研磨衬底的至少一部分以抛光衬底的金属层。带负电荷的聚合物或共聚物包含一种或多种选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐的单体，其分子量为约20,000g / mol或更高，并且涂覆至少一部分研磨剂使得研磨剂具有在带负电荷的聚合物或共聚物与研磨剂相互作用时降低的ζ电位值。

2. 发明授权

US06776810B1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US06776810B1
公开(公告)日：2004-08-17
申请号：US10073844
申请日：2002-02-11
申请人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G102
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.
摘要翻译：本发明提供一种化学机械抛光系统，以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或更多，其中所述磨料包含与带正电荷的电解液静电相关的颗粒。

3. 发明授权

US08721917B2 Polishing of sapphire with composite slurries 有权
标题翻译：用复合浆料抛光蓝宝石
公开(公告)号：US08721917B2
公开(公告)日：2014-05-13
申请号：US12286960
申请日：2008-10-03
申请人： Isaac K. Cherian , Abhaya K. Bakshi
发明人： Isaac K. Cherian , Abhaya K. Bakshi
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02
摘要： Improved slurry compositions comprising a mixture of a first type of particles and a second type of abrasive particles dispersed within an aqueous medium, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire. These abrasive slurry compositions comprise a mixture of a first type of abrasive particles having a hardness that is harder than the surface being polished and a second type of abrasive particles have a hardness that is softer than the surface being polished, particularly mixtures of silicon carbide abrasive particles and silica abrasive particles, dispersed within an aqueous medium.
摘要翻译：改进的浆料组合物，其包含第一类型的颗粒和分散在水性介质中的第二类型磨料颗粒的混合物，以及用于使用化学机械平面化（CMP）工艺的磨料浆料组合物，特别是用于抛光蓝宝石的磨料浆料组合物。这些磨料浆料组合物包含第一类磨料颗粒的混合物，该磨料颗粒的硬度比待抛光的表面硬，并且第二类磨料颗粒具有比被抛光表面更硬的硬度，特别是碳化硅磨料的混合物颗粒和二氧化硅磨料颗粒分散在水性介质中。

4. 发明授权

US07956356B2 Sapphire substrates and methods of making same 有权
标题翻译：蓝宝石基板及其制造方法
公开(公告)号：US07956356B2
公开(公告)日：2011-06-07
申请号：US11963369
申请日：2007-12-21
申请人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
发明人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
IPC分类号： H01L29/10
CPC分类号： C30B29/20
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
摘要翻译：蓝宝石衬底包括具有选自由a面，r面，m面和c面取向组成的组的结晶取向并且具有不大于约0.037μm/ cm 2的nTTV的大致平坦表面，其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化，所述基底的直径不小于约9.0cm。

5. 发明授权

US06705926B2 Boron-containing polishing system and method 有权
公开(公告)号：US06705926B2
公开(公告)日：2004-03-16
申请号：US10033152
申请日：2001-10-24
申请人： Renjie Zhou , Steven K. Grumbine , Isaac K. Cherian
发明人： Renjie Zhou , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： B24D334
CPC分类号： B24B37/24 , B24B37/245 , C09G1/02 , C09K3/1463 , H01L21/3212 , Y10T156/1051
摘要： The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

6. 发明申请

US20090101625A1 Silicon carbide particles, methods of fabrication, and methods using same 有权
标题翻译：碳化硅颗粒，制造方法和使用它们的方法
公开(公告)号：US20090101625A1
公开(公告)日：2009-04-23
申请号：US12286979
申请日：2008-10-03
申请人： Abhaya K. Bakshi , Isaac K. Cherian
发明人： Abhaya K. Bakshi , Isaac K. Cherian
IPC分类号： B44C1/22 , C09K3/14 , H01L21/304 , C01B31/36
CPC分类号： C09K3/1436 , B82Y30/00 , C01B32/956 , C04B35/62807 , C04B35/62889 , C04B35/62892 , C04B2235/3878 , C04B2235/3882 , C04B2235/5445 , C04B2235/5454 , C09K3/1409 , C09K3/1463 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： Improved silicon carbide particles, improved silicon carbide abrasive particles, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes. The particles can comprise nano-sized silicon carbide particles, particularly silicon carbide particles having a surface chemistry similar to silica.
摘要翻译：改进的碳化硅颗粒，改进的碳化硅磨料颗粒和用于化学机械平面化（CMP）工艺的研磨浆料组合物。颗粒可以包括纳米尺寸的碳化硅颗粒，特别是具有类似于二氧化硅的表面化学结构的碳化硅颗粒。

7. 发明授权

US07311856B2 Polymeric inhibitors for enhanced planarization 有权
标题翻译：用于增强平面化的聚合物抑制剂
公开(公告)号：US07311856B2
公开(公告)日：2007-12-25
申请号：US11093806
申请日：2005-03-30
申请人： Renjie Zhou , Steven K. Grumbine , Jian Zhang , Isaac K. Cherian
发明人： Renjie Zhou , Steven K. Grumbine , Jian Zhang , Isaac K. Cherian
IPC分类号： C09K13/00 , C09K13/06 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C11D1/008 , C11D1/58 , C11D11/0047 , C11D17/049
摘要： The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system.
摘要翻译：本发明提供一种包括抛光组分，表面活性剂和液体载体的化学机械抛光系统。本发明还提供了一种用抛光系统对衬底进行化学机械抛光的方法。

8. 发明授权

US06855266B1 Polishing system with stopping compound and method of its use 有权
标题翻译：具有停车复合抛光系统及其使用方法
公开(公告)号：US06855266B1
公开(公告)日：2005-02-15
申请号：US09636246
申请日：2000-08-10
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： C09G1/02 , H01L21/321 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.
摘要翻译：本发明提供一种用于抛光多层基底的一层或多层的系统，其包括第一金属层和第二层，所述第二层包括（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，（iv）至少一种具有第一金属层的抛光选择性的停止化合物：至少约30:1的第二层，和（v ）抛光垫和/或磨料。本发明还提供一种组合物，其包含（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂（iv）至少一种具有第一金属层的抛光选择性的停止化合物：第二至少约30:1的层，与（v）抛光垫和/或研磨剂一起使用。

9. 发明授权

US06685540B2 Polishing pad comprising particles with a solid core and polymeric shell 失效
标题翻译：抛光垫包括具有固体芯和聚合物壳的颗粒
公开(公告)号：US06685540B2
公开(公告)日：2004-02-03
申请号：US09995025
申请日：2001-11-27
申请人： Isaac K. Cherian , Sriram P. Anjur , Steven K. Grumbine
发明人： Isaac K. Cherian , Sriram P. Anjur , Steven K. Grumbine
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24D3/32
摘要： The invention provides a polishing pad comprising composite particles that comprise a solid core encapsulated by a polymeric shell material, wherein the solid core comprises a material that differs from the polymeric shell material, as well as a method of polishing a substrate with such a polishing pad.
摘要翻译：本发明提供了一种包括复合颗粒的抛光垫，其包括由聚合物壳材料包封的固体芯，其中所述固体芯包括与所述聚合物壳材料不同的材料，以及用这种抛光垫抛光基材的方法。

10. 发明授权

US06527622B1 CMP method for noble metals 有权
标题翻译：贵金属的CMP方法
公开(公告)号：US06527622B1
公开(公告)日：2003-03-04
申请号：US10054059
申请日：2002-01-22
申请人： Vlasta Brusic , Francesco M. De Rege , Kevin J. Moeggenborg , Isaac K. Cherian , Renjie Zhou
发明人： Vlasta Brusic , Francesco M. De Rege , Kevin J. Moeggenborg , Isaac K. Cherian , Renjie Zhou
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06 , H01L28/65
摘要： The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP systems each comprise an abrasive and/or polishing pad, a liquid carrier, and optionally one or more polishing additives. In a first embodiment, the polishing additives are selected from the group consisting of diketones, diketonates, heterocyclic nitrogen-containing compounds, heterocyclic oxygen-containing compounds, heterocyclic phosphorus-containing compounds, urea compounds, nitrogen-containing compounds that can be zwitterionic compounds, salts thereof, and combinations thereof. In a second embodiment, the polishing additive is a metal compound with two or more oxidation states and is used in conjunction with a peroxy-type oxidizer. In a third embodiment, the CMP system comprises &agr;-alumina and fumed alumina, wherein the weight ratio of &agr;-alumina to fumed alumina is about 0.6:1 to about 9:1.
摘要翻译：本发明提供一种抛光包括贵金属的基材的方法，包括（i）使基板与CMP系统接触，以及（ii）研磨基材的至少一部分以抛光基材。 CMP系统各自包括磨料和/或抛光垫，液体载体和任选的一种或多种抛光添加剂。在第一实施方案中，抛光添加剂选自二酮，二酮，杂环含氮化合物，含杂环氧的化合物，含杂环的化合物，尿素化合物，可以是两性离子化合物的含氮化合物，其盐，及其组合。在第二实施方案中，抛光添加剂是具有两种或更多种氧化态的金属化合物，并与过氧型氧化剂结合使用。在第三个实施方案中，CMP系统包括α-氧化铝和热解氧化铝，其中α-氧化铝与热解氧化铝的重量比为约0.6:1至约9:1。

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