会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Method of polishing a silicon-containing dielectric
    • 抛光含硅电介质的方法
    • US08486169B2
    • 2013-07-16
    • US12239249
    • 2008-09-26
    • Phillip W. CarterTimothy P. Johns
    • Phillip W. CarterTimothy P. Johns
    • C09G1/02
    • C09K3/1463C03C19/00C09G1/02H01L21/31053
    • A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.
    • 一种化学机械抛光系统,包括:(a)具有约180nm或更小的平均粒度和正ζ电位的二氧化铈磨料,(b)具有pKa约3至约9的官能团的抛光添加剂, 其中所述抛光添加剂选自芳基胺,氨基醇,脂族胺,杂环胺,异羟肟酸,氨基羧酸,环状单羧酸,不饱和一元羧酸,取代的苯酚,磺酰胺,硫醇,其盐及其组合,以及 (c)液体载体,其中所述化学机械抛光系统具有约4至约6的pH。
    • 5. 发明授权
    • Oxidation-stabilized CMP compositions and methods
    • 氧化稳定的CMP组合物和方法
    • US07732393B2
    • 2010-06-08
    • US11384538
    • 2006-03-20
    • Steven K. GrumbineRenjie ZhouZhan ChenPhillip W. Carter
    • Steven K. GrumbineRenjie ZhouZhan ChenPhillip W. Carter
    • C09G1/00
    • H01L21/3212C09G1/02C09K3/1463C23F3/04C23F3/06
    • The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
    • 本发明提供一种包含氨基化合物,自由基形成氧化剂,能够抑制氨基化合物自由基诱导氧化的自由基捕获剂的化学机械抛光(CMP)组合物,以及含水载体。 自由基捕获剂是羟基取代的多不饱和环状化合物,含氮化合物或其组合。 任选地,组合物包含金属氧化物研磨剂(例如二氧化硅,氧化铝,二氧化钛,二氧化铈,氧化锆,或两种或更多种前述研磨剂的组合)。 本发明还提供了用CMP组合物对基材进行化学机械抛光的方法,以及提高含有胺和自由基形成氧化剂的CMP组合物的保存期限的方法,其中自由基捕获剂是 添加到CMP组合物中。
    • 6. 发明授权
    • Method of polishing a silicon-containing dielectric
    • 抛光含硅电介质的方法
    • US07071105B2
    • 2006-07-04
    • US10356970
    • 2003-02-03
    • Phillip W CarterTimothy P Johns
    • Phillip W CarterTimothy P Johns
    • H01L21/461H01L21/302
    • C09K3/1463C03C19/00C09G1/02H01L21/31053
    • The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pKa of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.
    • 本发明涉及一种抛光含硅介电层的方法,涉及使用化学机械抛光系统,该系统包括(a)无机磨料,(b)抛光添加剂和(c)液体载体,其中 抛光组合物具有约4至约6的pH。抛光添加剂包括具有约4至约9的pK a a官能团,并且选自芳基胺,氨基醇,脂族胺 杂环胺,异羟肟酸,氨基羧酸,环状单羧酸,不饱和一元羧酸,取代苯酚,磺酰胺,硫醇,其盐及其组合。 本发明进一步涉及化学机械抛光系统,其中无机磨料是二氧化铈。